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SnP$_2$S$_6$: A Promising Infrared Nonlinear Optical Crystal with Strong Non-Resonant Second Harmonic Generation and Phase-matchability
Authors:
**gyang He,
Seng Huat Lee,
Francesco Naccarato,
Guillaume Brunin,
Rui Zu,
Yuanxi Wang,
Leixin Miao,
Huaiyu Wang,
Nasim Alem,
Geoffroy Hautier,
Gian-Marco Rignanese,
Zhiqiang Mao,
Venkatraman Gopalan
Abstract:
High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength up/down conversion using sum/difference frequency generation, respectively. NLO crystals need to satisfy many competing criteria, including large nonlinear opt…
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High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength up/down conversion using sum/difference frequency generation, respectively. NLO crystals need to satisfy many competing criteria, including large nonlinear optical susceptibility, large laser induced damage threshold (LIDT), wide transparency range and phase-matchability. Here, we report bulk single crystals of SnP_2S_6 with a large non-resonant SHG coefficient of d33= 53 pm/V at 1550nm and a large LIDT of 350 GW/cm^2 for femtosecond laser pulses. It also exhibits a broad transparency range from 0.54 μm to 8.5μm (bandgap of ~2.3 eV) and can be both Type I and Type II phase-matched. The complete linear and SHG tensors are measured as well as predicted by first principles calculations, and they are in excellent agreement. A proximate double-resonance condition in the electronic band structure for both the fundamental and the SHG light is shown to enhance the non-resonant SHG response. Therefore, SnP2S6 is an outstanding candidate for infrared laser applications.
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Submitted 8 April, 2022;
originally announced April 2022.
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Assessing the quality of relaxation-time approximations with fully-automated computations of phonon-limited mobilities
Authors:
Romain Claes,
Guillaume Brunin,
Matteo Giantomassi,
Gian-Marco Rignanese,
Geoffroy Hautier
Abstract:
The mobility of carriers, as limited by their scattering with phonons, can now routinely be obtained from first-principles electron-phonon coupling calculations. However, so far, most computations have relied on some form of simplification of the linearized Boltzmann transport equation based on either the self-energy, the momentum- or constant relaxation time approximations. Here, we develop a hig…
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The mobility of carriers, as limited by their scattering with phonons, can now routinely be obtained from first-principles electron-phonon coupling calculations. However, so far, most computations have relied on some form of simplification of the linearized Boltzmann transport equation based on either the self-energy, the momentum- or constant relaxation time approximations. Here, we develop a high-throughput infrastructure and an automatic workflow and we compute 69 phonon-limited mobilities in semiconductors. We compare the results resorting to the approximations with the exact iterative solution. We conclude that the approximate values may deviate significantly from the exact ones and are thus not reliable. Given the minimal computational overhead, our work encourages to rely on this exact iterative solution and warns on the possible inaccuracy of earlier results reported using relaxation time approximations.
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Submitted 25 February, 2022;
originally announced February 2022.
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Indirect light absorption model for highly strained silicon infrared sensors
Authors:
Nicolas Roisin,
Guillaume Brunin,
Gian-Marco Rignanese,
Denis Flandre,
Jean-Pierre Raskin
Abstract:
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and include the effects of tensile and compressive uniaxial strains. The model is based on material properties such as the bandgap, the conduction and valence band…
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The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and include the effects of tensile and compressive uniaxial strains. The model is based on material properties such as the bandgap, the conduction and valence band density-of-states effective masses, and the phonon frequencies, which are obtained from first principles including strain up to +2% along the [110] and [111] directions. We show that the limit of absorption can increase from 1.14 (1.09) to 1.35 $μ$m (0.92 eV) under 2% strain and that the absorption increases by a factor of 55 for the zero-strain cutoff wavelength of 1.14 $μ$m when a 2% compressive strain is applied in the [110] direction. We demonstrate that this effect is mainly due to the impact of strain on the electronic bandgaps of silicon, directly followed by the valence band density-of-states effective mass.
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Submitted 2 November, 2021; v1 submitted 17 August, 2021;
originally announced August 2021.
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Boron phosphide as a \emph{p}-type transparent conductor: optical absorption and transport through electron-phonon coupling
Authors:
Viet-Anh Ha,
Bora Karasulu,
Ryo Maezono,
Guillaume Brunin,
Joel Basile Varley,
Gian-Marco Rignanese,
Bartomeu Monserrat,
Geoffroy Hautier
Abstract:
Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will affect its transparency. In this work, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify…
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Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will affect its transparency. In this work, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a \emph{p}-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm$^2$/Vs) at room temperature. This exceptional mobility comes from a combination of low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest this could be a general advantage of non-oxides for \emph{p}-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and shows that it exceeds by one order of magnitude that of established \emph{p}-type transparent conductors, confirming the potential of this material.
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Submitted 11 April, 2020;
originally announced April 2020.
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Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles
Authors:
Guillaume Brunin,
Henrique Pereira Coutada Miranda,
Matteo Giantomassi,
Miquel Royo,
Massimiliano Stengel,
Matthieu J. Verstraete,
Xavier Gonze,
Gian-Marco Rignanese,
Geoffroy Hautier
Abstract:
We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage that computations can be easily automated. Scattering potentials are interpolated on dense $\mathbf{q}$ meshes using Fourier transforms and ab initio models to…
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We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage that computations can be easily automated. Scattering potentials are interpolated on dense $\mathbf{q}$ meshes using Fourier transforms and ab initio models to describe the long-range potentials generated by dipoles and quadrupoles. To reduce significantly the computational cost, we take advantage of crystal symmetries and employ the linear tetrahedron method and double-grid integration schemes, in conjunction with filtering techniques in the Brillouin zone. We report results for the electron mobility in Si, GaAs, and GaP obtained with this new methodology.
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Submitted 21 September, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
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Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids
Authors:
Guillaume Brunin,
Henrique Pereira Coutada Miranda,
Matteo Giantomassi,
Miquel Royo,
Massimiliano Stengel,
Matthieu J. Verstraete,
Xavier Gonze,
Gian-Marco Rignanese,
Geoffroy Hautier
Abstract:
We include the treatment of quadrupolar fields beyond the Fröhlich interaction in the first-principles electron-phonon vertex in semiconductors. Such quadrupolar fields induce long-range interactions that have to be taken into account for accurate physical results. We apply our formalism to Si (nonpolar), GaAs, and GaP (polar) and demonstrate that electron mobilities show large errors if dynamical…
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We include the treatment of quadrupolar fields beyond the Fröhlich interaction in the first-principles electron-phonon vertex in semiconductors. Such quadrupolar fields induce long-range interactions that have to be taken into account for accurate physical results. We apply our formalism to Si (nonpolar), GaAs, and GaP (polar) and demonstrate that electron mobilities show large errors if dynamical quadrupoles are not properly treated.
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Submitted 21 September, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
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Are Small Polarons Always Detrimental to Transparent Conducting Oxides ?
Authors:
Guillaume Brunin,
Gian-Marco Rignanese,
Geoffroy Hautier
Abstract:
Transparent conducting oxides (TCOs) are essential to many technologies including solar cells and transparent electronics. The search for high performance n- or p-type TCOs has mainly focused on materials offering transport through band carriers instead of small polarons. In this work, we break this paradigm and demonstrate using well-known physical models that, in certain circumstances, TCOs exhi…
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Transparent conducting oxides (TCOs) are essential to many technologies including solar cells and transparent electronics. The search for high performance n- or p-type TCOs has mainly focused on materials offering transport through band carriers instead of small polarons. In this work, we break this paradigm and demonstrate using well-known physical models that, in certain circumstances, TCOs exhibiting transport by small polarons offer a better combination of transparency and conductivity than materials conducting through band transport. We link this surprising finding to the fundamentally different physics of optical absorption for band and polaronic carriers. Our work rationalizes the good performances of recently emerging small-polaronic Cr-based p-type TCOs such as Sr-doped LaCrO$_3$ and outlines design principles for the development of high-performance TCOs based on transport by small polarons. This opens new avenues for the discovery of high-performance TCOs especially p-type.
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Submitted 11 October, 2018;
originally announced October 2018.
