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Optical transition parameters of the silicon T centre
Authors:
Chloe Clear,
Sara Hosseini,
Amirhossein AlizadehKhaledi,
Nicholas Brunelle,
Austin Woolverton,
Joshua Kanaganayagam,
Moein Kazemi,
Camille Chartrand,
Mehdi Keshavarz,
Yihuang Xiong,
Oney O. Soykal,
Geoffroy Hautier,
Valentin Karassiouk,
Mike Thewalt,
Daniel Higginbottom,
Stephanie Simmons
Abstract:
The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamilto…
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The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.
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Submitted 11 May, 2024;
originally announced May 2024.
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Deterministic vs. Non Deterministic Finite Automata in Automata Processing
Authors:
Farzana Ahmed Siddique,
Tommy James Tracy II,
Nathan Brunelle,
Kevin Skadron
Abstract:
Linear-time pattern matching engines have seen promising results using Finite Automata (FA) as their computation model. Among different FA variants, deterministic (DFA) and non-deterministic (NFA) are the most commonly used computation models for FA-based pattern matching engines. Moreover, NFA is the prevalent model in pattern matching engines on spatial architectures. The reasons are: i) DFA siz…
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Linear-time pattern matching engines have seen promising results using Finite Automata (FA) as their computation model. Among different FA variants, deterministic (DFA) and non-deterministic (NFA) are the most commonly used computation models for FA-based pattern matching engines. Moreover, NFA is the prevalent model in pattern matching engines on spatial architectures. The reasons are: i) DFA size, as in #states, can be exponential compared to equivalent NFA, ii) DFA cannot exploit the massive parallelism available on spatial architectures. This paper performs an empirical study on the #state of minimized DFA and optimized NFA across a diverse set of real-world benchmarks and shows that if distinct DFAs are generated for distinct patterns, #states of minimized DFA are typically equal to their equivalent optimized NFA. However, NFA is more robust in maintaining the low #states for some benchmarks. Thus, the choice of NFA vs. DFA for spatial architecture is less important than the need to generate distinct DFAs for each pattern and support these distinct DFAs' parallel processing. Finally, this paper presents a throughput study for von Neumann's architecture-based (CPU) vs. spatial architecture-based (FPGA) automata processing engines. The study shows that, based on the workload, neither CPU-based automata processing engine nor FPGA-based automata processing engine is the clear winner. If #patterns matched per workload increases, the CPU-based automata processing engine's throughput decreases. On the other hand, the FPGA-based automata processing engine lacks the memory spilling option; hence, it fails to accommodate an entire automata if it does not fit into FPGA's logic fabric. In the best-case scenario, the CPU has a 4.5x speedup over the FPGA, while for some benchmarks, the FPGA has a 32,530x speedup over the CPU.
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Submitted 18 October, 2022;
originally announced October 2022.
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Waveguide-integrated silicon T centres
Authors:
A. DeAbreu,
C. Bowness,
A. Alizadeh,
C. Chartrand,
N. A. Brunelle,
E. R. MacQuarrie,
N. R. Lee-Hone,
M. Ruether,
M. Kazemi,
A. T. K. Kurkjian,
S. Roorda,
N. V. Abrosimov,
H. -J. Pohl,
M. L. W. Thewalt,
D. B. Higginbottom,
S. Simmons
Abstract:
The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects o…
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The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T_1 times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.
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Submitted 28 September, 2022;
originally announced September 2022.
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Optical observation of single spins in silicon
Authors:
A. T. K. Kurkjian,
D. B. Higginbottom,
C. Chartrand,
E. R. MacQuarrie,
J. R. Klein,
N. R. Lee-Hone,
J. Stacho,
C. Bowness,
L. Bergeron,
A. DeAbreu,
N. A. Brunelle,
S. R. Harrigan,
J. Kanaganayagam,
M. Kazemi,
D. W. Marsden,
T. S. Richards,
L. A. Stott,
S. Roorda,
K. J. Morse,
M. L. W. Thewalt,
S. Simmons
Abstract:
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advan…
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The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable `$T$ centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
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Submitted 12 March, 2021;
originally announced March 2021.