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Onset of optical-phonon cooling in multilayer graphene revealed by RF noise and black-body radiation thermometries
Authors:
D. Brunel,
S. Berthou,
R. Parret,
F. Vialla,
P. Morfin,
Q. Wilmart,
G. Fève,
J. -M. Berroir,
P. Roussignol,
C. Voisin,
B. Plaçais
Abstract:
We report on electron cooling power measurements in few-layer graphene excited by Joule heating by means of a new setup combining electrical and optical probes of the electron and phonon baths temperatures. At low bias, noise thermometry allows us to retrieve the well known acoustic phonon cooling regimes below and above the Bloch Grüneisen temperature, with additional control over the phonon bath…
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We report on electron cooling power measurements in few-layer graphene excited by Joule heating by means of a new setup combining electrical and optical probes of the electron and phonon baths temperatures. At low bias, noise thermometry allows us to retrieve the well known acoustic phonon cooling regimes below and above the Bloch Grüneisen temperature, with additional control over the phonon bath temperature. At high electrical bias, we show the relevance of direct optical investigation of the electronic temperature by means of black-body radiation measurements that provide higher accuracy than noise thermometry. In this regime, the onset of new efficient relaxation pathways involving optical modes is observed
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Submitted 29 April, 2018;
originally announced April 2018.
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Hot electron cooling by acoustic phonons in graphene
Authors:
A. C. Betz,
F. Vialla,
D. Brunel,
C. Voisin,
M. Picher,
A. Cavanna,
A. Madouri,
G. Fève,
J. -M. Berroir,
B. Plaçais,
E. Pallecchi
Abstract:
We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. Thi…
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We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $Σ$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $Σ$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.
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Submitted 11 August, 2012; v1 submitted 13 March, 2012;
originally announced March 2012.
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Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale
Authors:
D. Brunel,
D. Troadec,
D. Hourlier,
D. Deresmes,
M Zdrojek,
T. Mélin
Abstract:
We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-μm scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 μm range using transport measurements, conducting atomic force microscopy and Kelvin probe microscopy. In contrast with IBID, EBID electrodes exhibit weakly conductive h…
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We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-μm scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 μm range using transport measurements, conducting atomic force microscopy and Kelvin probe microscopy. In contrast with IBID, EBID electrodes exhibit weakly conductive halos at the sub-μm scale, and can thus be used to achieve resist-free electrical contacts for transport measurements at the sub-μm scale. Four-point transport measurements using μm-spaced EBID contacts are provided in the case of a multiwalled carbon nanotube.
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Submitted 10 March, 2011;
originally announced March 2011.
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Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin Force Microscopy
Authors:
David Brunel,
Dominique Deresmes,
Thierry Melin
Abstract:
We use Kelvin Force Microscopy (KFM) to study the electrostatic properties of single-walled Carbon Nanotube Field Effect Transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete phenomenological determination of the averaging effects associated with the KFM probe side capacitances,…
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We use Kelvin Force Microscopy (KFM) to study the electrostatic properties of single-walled Carbon Nanotube Field Effect Transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete phenomenological determination of the averaging effects associated with the KFM probe side capacitances, and thus, to obtain KFM measurements with quantitative character. The value of the electrostatic lever arm of the CNTFET is determined from KFM measurements, and found in agreement with transport measurements based on Coulomb blockade.
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Submitted 4 June, 2009;
originally announced June 2009.
