Showing 1–19 of 19 results for author: Brumme, T

Emergence of non-uniform strain induced exciton species in homo- and heterobilayer transition metal dichalcogenides

Authors: Mohammadreza Daqiqshirazi, Thomas Brumme

Abstract: Full control of excitons in 2D materials is an important step to exploit them for applications. Straintronics is one method that can be used to effectively control the movement of excitons. Unfortunately, the effects of non-uniform strain in 2D materials are not yet well understood theoretically, although these strain fields can be present in experiments in the form of wrinkles, bubbles, and folds… ▽ More Full control of excitons in 2D materials is an important step to exploit them for applications. Straintronics is one method that can be used to effectively control the movement of excitons. Unfortunately, the effects of non-uniform strain in 2D materials are not yet well understood theoretically, although these strain fields can be present in experiments in the form of wrinkles, bubbles, and folds, or even explicitly applied to 2D materials through pre-patterned surfaces. The effects of these non-uniform strain fields on multilayers are even less studied due to the sheer size of these systems. In the present investigation, we study wrinkles that form in homo- and heterobilayers of 2D transition metal dichalcogenides using density functional theory. We show that the non-uniform strain leads to the formation of interlayer excitons in homobilayers of $ \mathrm WSe_2 $ and to exciton localization in heterobilayers of $ \mathrm WSe_2$-$ \mathrm MoSe_2$. Our results also reveal that the spin angular momentum is changed due to the mixing of in- and out-of-plane states which can explain the brightening of the formerly dark excitonic states under strain. Our results will pave the way towards a full understanding of the strain-control of excitons in 2D materials. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Comments: 18 pages main text including 6 Figures, 13 pages supporting information including 13 Figures

Funneling and spin-orbit coupling in transition-metal dichalcogenide nanotubes and wrinkles

Authors: Mohammadreza Daqiqshirazi, Thomas Brumme

Abstract: Strain engineering provides a powerful means to tune the properties of two-dimensional materials. Accordingly, numerous studies have investigated the effect of bi- and uniaxial strain. Yet, the strain fields in many systems such as nanotubes and nanoscale wrinkles are intrinsically inhomogeneous and the consequences of this symmetry breaking are much less studied. Understanding how this affects th… ▽ More Strain engineering provides a powerful means to tune the properties of two-dimensional materials. Accordingly, numerous studies have investigated the effect of bi- and uniaxial strain. Yet, the strain fields in many systems such as nanotubes and nanoscale wrinkles are intrinsically inhomogeneous and the consequences of this symmetry breaking are much less studied. Understanding how this affects the electronic properties is crucial especially since wrinkling is a powerful method to apply strain to two-dimensional materials in a controlled manner. In this paper, we employ density functional theory to understand the correlation between the atomic and the electronic structure in nanoscale wrinkles and nanotubes of the prototypical transition metal dichalcogenide $\mathrm{WSe}_2$. Our research shows that the symmetry breaking in these structures leads to strong Rashba-like splitting of the bands at the $Γ$ point and they thus may be utilized in future tunable spintronic devices. The inhomogeneous strain reduces the band gap and leads to a localization of the band edges in the highest-curvature region, thus funneling excitons there. Moreover, we show how wrinkles can be modeled as nanotubes with the same curvature and when this comparison breaks down and further inhomogenities have to be taken into account. △ Less

Submitted 13 September, 2023; originally announced September 2023.

Comments: main text 27 pages (preprint style) with 10 figures, attached supplemental material 31 pages (58 in total) with 24 figures

Edge conductivity in PtSe$_2$ nanostructures

Authors: Roman Kempt, Agnieszka Kuc, Thomas Brumme, Thomas Heine

Abstract: PtSe$_2$ is a promising 2D material for nanoelectromechanical sensing and photodetection in the infrared regime. One of its most compelling features is the facile synthesis at temperatures below 500 °C, which is compatible with current back-end-of-line semiconductor processing. However, this process generates polycrystalline thin films with nanoflake-like domains of 5 to 100 nm size. To investigat… ▽ More PtSe$_2$ is a promising 2D material for nanoelectromechanical sensing and photodetection in the infrared regime. One of its most compelling features is the facile synthesis at temperatures below 500 °C, which is compatible with current back-end-of-line semiconductor processing. However, this process generates polycrystalline thin films with nanoflake-like domains of 5 to 100 nm size. To investigate the lateral quantum confinement effect in this size regime, we train a deep neural network to obtain an interatomic potential at DFT accuracy and use that to model ribbons, surfaces, nanoflakes, and nanoplatelets of PtSe$_2$ with lateral widths between 5 to 15 nm. We determine which edge terminations are the most stable and find evidence that the electrical conductivity is localized on the edges for lateral sizes below 10 nm. This suggests that the transport channels in thin films of PtSe$_2$ might be dominated by networks of edges, instead of transport through the layers themselves. △ Less

Submitted 7 June, 2023; originally announced June 2023.

Electron Holographic Map** of Structural and Electronic Reconstruction at Mono- and Bilayer Steps of h-BN

Authors: Subakti Subakti, Mohammadreza Daqiqshirazi, Daniel Wolf, Martin Linck, Felix L. Kern, Mitisha Jain, Silvan Kretschmer, Arkady V. Krasheninnikov, Thomas Brumme, Axel Lubk

Abstract: Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag e… ▽ More Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag edges and steps comprising two monolayers and the absence of which at monolayer steps. The technique paves the way for studying other charge (de)localization phenomena in 2D materials, e.g., at polar edges, topological edge states and defects. △ Less

Submitted 8 October, 2022; originally announced October 2022.

Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties

Authors: Roman Kempt, Sebastian Lukas, Oliver Hartwig, Maximilian Prechtl, Agnieszka Kuc, Thomas Brumme, Sha Li, Daniel Neumaier, Max C. Lemme, Georg Duesberg, Thomas Heine

Abstract: PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these… ▽ More PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device. △ Less

Submitted 4 January, 2022; v1 submitted 15 December, 2021; originally announced December 2021.

Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

Authors: Long Yuan, Biyuan Zheng, Qiuchen Zhao, Roman Kempt, Thomas Brumme, Agnieszka Beata Kuc, Chao Ma, Shibin Deng, Anlian Pan, Libai Huang

Abstract: Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we employed ultrafast microscopy with ~ 200 fs temporal resolution to image the transport of different exciton phases in a type II WSe2-WS1.16Se0.84 lateral heterostructu… ▽ More Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we employed ultrafast microscopy with ~ 200 fs temporal resolution to image the transport of different exciton phases in a type II WSe2-WS1.16Se0.84 lateral heterostructure. These measurements visualized the extremely rapid expansion of a highly non-equilibrium electron-hole (e-h) plasma phase with a Fermi velocity up to 3.2*10^6 cm*s-1. An abrupt first-order exciton Mott transition at a density of ~ 5*10^12 cm-2 at room temperature was revealed by ultrafast microscopy, which could be disguised as a continuous transition in conventional steady-state measurements. These results point to exciting new opportunities for designing atomically thin lateral heterojunctions as novel highways of excitons and collective e-h plasma for high-speed electronic applications. △ Less

Submitted 15 November, 2021; originally announced November 2021.

Electronic Structures of Two-Dimensional PC6-Type Materials

Authors: Maximilian A. Springer, Thomas Brumme, Agnieszka Kuc, Thomas Heine

Abstract: Two-dimensional (2D) materials may exhibit intriguing band structure features (e.g., Dirac points), that lay far away from the Fermi level. They are, thus, not usable in applications. The semiconducting 2D material PC6 has two Dirac cones above and below the Fermi level. Therefore, it is an ideal playground to demonstrate chemical functionalization methods for shifting the Fermi level in order to… ▽ More Two-dimensional (2D) materials may exhibit intriguing band structure features (e.g., Dirac points), that lay far away from the Fermi level. They are, thus, not usable in applications. The semiconducting 2D material PC6 has two Dirac cones above and below the Fermi level. Therefore, it is an ideal playground to demonstrate chemical functionalization methods for shifting the Fermi level in order to access interesting band structure features. PC6 is based on the sqrt(7) x sqrt(7)R19.1deg super cell of graphene with two carbon atoms per unit cell substituted by phosphorous. It is demonstrated how substitution with other heteroatoms that contain a different number of valence electrons, the Dirac points can be accessed. Alternatively, hydrogen atoms can be used as adatoms at the heteroatom sites. This increases electron filling and shifts the Fermi level upwards. △ Less

Submitted 30 September, 2021; originally announced September 2021.

Electrical control of orbital and vibrational interlayer coupling in bi- and trilayer 2H-MoS$_2$

Authors: Julian Klein, Jakob Wierzbowski, Pedro Soubelet, Thomas Brumme, Lorenzo Maschio, Agnieszka Kuc, Kai Müller, Andreas V. Stier, Jonathan J. Finley

Abstract: Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with… ▽ More Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with ab-initio calculations. Through polarization resolved photoluminescence spectroscopy in the same device, we observe a strongly tunable valley dichroism with maximum circular polarization degree of $\sim 60\%$ in bilayer and $\sim 35\%$ in trilayer MoS$_2$ that are fully consistent with a rate equation model which includes input from electronic band structure calculations. We identify the highly delocalized electron wave function between the layers close to the high symmetry $Q$ points as the origin of the tunable circular dichroism. Our results demonstrate the possibility of electric field tunable interlayer coupling for controlling emergent spin-valley physics and hybridization driven effects in vdW materials and their heterostructures. △ Less

Submitted 22 June, 2021; originally announced June 2021.

Comments: Main manuscript: 10 pages, 4 figures ; Supplemental material: 14 pages, 9 figures

Journal ref: Phys. Rev. Materials 6, 024002 (2022)

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels

Authors: Davide Romanin, Thomas Brumme, Dario Daghero, Renato S. Gonnelli, Erik Piatti

Abstract: Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram upon increasing electron do**, including a superconducting phase, a polaronic reconstruction of the bandstructure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events - the scattering lifetime - is a key parameter to describe charge transport and obtain physical insigh… ▽ More Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram upon increasing electron do**, including a superconducting phase, a polaronic reconstruction of the bandstructure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events - the scattering lifetime - is a key parameter to describe charge transport and obtain physical insight in the behavior of such a complex system. In this work, we combine the solution of the Boltzmann transport equation (based on ab-initio density functional theory calculations of the electronic bandstructure) with the experimental results concerning the charge-carrier mobility, in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron do** and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling, and discover two narrow ranges of electron do** where the scattering lifetime is strongly suppressed. We indentify the opening of additional intervalley scattering channels connecting the simultaneously-filled K/K' and Q/Q' valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q' valleys upon increasing electron do**. △ Less

Submitted 19 August, 2020; v1 submitted 10 June, 2020; originally announced June 2020.

Comments: 10 pages, 6 figures

Journal ref: J. Appl. Phys. 128, 063907 (2020)

Artificial Relativistic Molecules

Authors: Jae Whan Park, Hyo Sung Kim, Thomas Brumme, Thomas Heine, Han Woong Yeom

Abstract: We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The sp… ▽ More We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The spin-orbit coupling is essential both in forming such Dirac electronic states and stabilizing the artificial molecules by reducing the adatom-substrate interaction. Lead atoms are found to be ideally suited for a maximized relativistic effect. This work initiates the use of novel two dimensional orderings to guide the fabrication of artificial molecules of unprecedented properties. △ Less

Submitted 3 February, 2020; originally announced February 2020.

Comments: 7 page, 3 figures

Electron-Phonon-Driven Three-Dimensional Metallicity in an Insulating Cuprate

Authors: Edoardo Baldini, Michael A. Sentef, Swagata Acharya, Thomas Brumme, Evgeniia Sheveleva, Fryderyk Lyzwa, Ekaterina Pomjakushina, Christian Bernhard, Mark van Schilfgaarde, Fabrizio Carbone, Angel Rubio, Cedric Weber

Abstract: The role of the crystal lattice for the electronic properties of cuprates and other high-temperature superconductors remains controversial despite decades of theoretical and experimental efforts. While the paradigm of strong electronic correlations suggests a purely electronic mechanism behind the insulator-to-metal transition, recently the mutual enhancement of the electron-electron and the elect… ▽ More The role of the crystal lattice for the electronic properties of cuprates and other high-temperature superconductors remains controversial despite decades of theoretical and experimental efforts. While the paradigm of strong electronic correlations suggests a purely electronic mechanism behind the insulator-to-metal transition, recently the mutual enhancement of the electron-electron and the electron-phonon interaction and its relevance to the formation of the ordered phases have also been emphasized. Here, we combine polarization-resolved ultrafast optical spectroscopy and state-of-the-art dynamical mean-field theory to show the importance of the crystal lattice in the breakdown of the correlated insulating state in an archetypal undoped cuprate. We identify signatures of electron-phonon coupling to specific fully-symmetric optical modes during the build-up of a three-dimensional metallic state that follows charge photodo**. Calculations for coherently displaced crystal structures along the relevant phonon coordinates indicate that the insulating state is remarkably unstable toward metallization despite the seemingly large charge-transfer energy scale. This hitherto unobserved insulator-to-metal transition mediated by fully-symmetric lattice modes can find extensive application in a plethora of correlated solids. △ Less

Submitted 8 January, 2020; originally announced January 2020.

Anomalous Interlayer Exciton Diffusion in Twist-Angle-Dependent Moiré Potentials of WS$_2$-WSe$_2$ Heterobilayers

Authors: Long Yuan, Biyuan Zheng, Jens Kunstmann, Thomas Brumme, Agnieszka Beata Kuc, Chao Ma, Shibin Deng, Daria Blach, Anlian Pan, Libai Huang

Abstract: The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the localization and delocalization of interlayer excitons in the moiré potentials is necessary. Here, we investigated interlayer exciton dynamics and transport mo… ▽ More The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the localization and delocalization of interlayer excitons in the moiré potentials is necessary. Here, we investigated interlayer exciton dynamics and transport modulated by the moiré potentials in WS$_2$-WSe$_2$ heterobilayers in time, space, and momentum domains using transient absorption microscopy combined with first-principles calculations. Experimental results verified the theoretical prediction of energetically favorable K-Q interlayer excitons and unraveled exciton-population dynamics that was controlled by the twist-angle-dependent energy difference between the K-Q and K-K excitons. Spatially- and temporally-resolved exciton-population imaging directly visualizes exciton localization by twist-angle-dependent moiré potentials of ~100 meV. Exciton transport deviates significantly from normal diffusion due to the interplay between the moiré potentials and strong many-body interactions, leading to exciton-density- and twist-angle-dependent diffusion length. These results have important implications for designing vdW heterostructures for exciton and spin transport as well as for quantum communication applications. △ Less

Submitted 7 October, 2019; originally announced October 2019.

Journal ref: Nature Materials 19, 617-623 (2020)

Advanced capabilities for materials modelling with Quantum ESPRESSO

Authors: P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio Jr., A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia , et al. (25 additional authors not shown)

Abstract: Quantum ESPRESSO is an integrated suite of open-source computer codes for quantum simulations of materials using state-of-the art electronic-structure techniques, based on density-functional theory, density-functional perturbation theory, and many-body perturbation theory, within the plane-wave pseudo-potential and projector-augmented-wave approaches. Quantum ESPRESSO owes its popularity to the wi… ▽ More Quantum ESPRESSO is an integrated suite of open-source computer codes for quantum simulations of materials using state-of-the art electronic-structure techniques, based on density-functional theory, density-functional perturbation theory, and many-body perturbation theory, within the plane-wave pseudo-potential and projector-augmented-wave approaches. Quantum ESPRESSO owes its popularity to the wide variety of properties and processes it allows to simulate, to its performance on an increasingly broad array of hardware architectures, and to a community of researchers that rely on its capabilities as a core open-source development platform to implement theirs ideas. In this paper we describe recent extensions and improvements, covering new methodologies and property calculators, improved parallelization, code modularization, and extended interoperability both within the distribution and with external software. △ Less

Submitted 28 September, 2017; originally announced September 2017.

Comments: Psi-k highlight September 2017: psi-k.net/dowlnload/highlights/Highlight_137.pdf; J. Phys.: Condens. Matter, accepted

Journal ref: J. Phys.: Condens. Matter 29, 465901 (2017)

Momentum-Resolved View of Electron-Phonon Coupling in Multilayer WSe$_2$

Authors: Lutz Waldecker, Roman Bertoni, H. Hübener, Thomas Brumme, Thomas Vasileiadis, Daniela Zahn, Angel Rubio, Ralph Ernstorfer

Abstract: We investigate the interactions of photoexcited carriers with lattice vibrations in thin films of the layered transition metal dichalcogenide (TMDC) WSe$_2$. Employing femtosecond electron diffraction with monocrystalline samples and first principle density functional theory calculations, we obtain a momentum-resolved picture of the energy-transfer from excited electrons to phonons. The measured m… ▽ More We investigate the interactions of photoexcited carriers with lattice vibrations in thin films of the layered transition metal dichalcogenide (TMDC) WSe$_2$. Employing femtosecond electron diffraction with monocrystalline samples and first principle density functional theory calculations, we obtain a momentum-resolved picture of the energy-transfer from excited electrons to phonons. The measured momentum-dependent phonon population dynamics are compared to first principle calculations of the phonon linewidth and can be rationalized in terms of electronic phase-space arguments. The relaxation of excited states in the conduction band is dominated by intervalley scattering between $Σ$ valleys and the emission of zone-boundary phonons. Transiently, the momentum-dependent electron-phonon coupling leads to a non-thermal phonon distribution, which, on longer timescales, relaxes to a thermal distribution via electron-phonon and phonon-phonon collisions. Our results constitute a basis for monitoring and predicting out of equilibrium electrical and thermal transport properties for nanoscale applications of TMDCs. △ Less

Submitted 29 June, 2017; v1 submitted 9 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. Lett. 119, 036803 (2017)

Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect

Authors: Thomas Brumme, Matteo Calandra, Francesco Mauri

Abstract: The transition-metal dichalcogenides have attracted a lot of attention as a possible step**-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two successive scattering events - the transport scattering time. In a recent report, we have shown that it is possible to use density functional theory to obtain the… ▽ More The transition-metal dichalcogenides have attracted a lot of attention as a possible step**-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two successive scattering events - the transport scattering time. In a recent report, we have shown that it is possible to use density functional theory to obtain the band structure of two-dimensional semiconductors in presence of field effect do**. Here, we report a simple method to extract the scattering time from the experimental conductivity and from the knowledge of the band structure. We apply our approach to monolayers and multilayers of MoS$_2$, MoSe$_2$, MoTe$_2$, WS$_2$, and WSe$_2$ in presence of a gate. In WS$_2$, for which accurate measurements of mobility have been published, we find that the scattering time is inversely proportional to the density of states at the Fermi level. Finally, we show that it is possible to identify the critical do** at which different valleys start to be occupied from the do**-dependence of the conductivity. △ Less

Submitted 2 February, 2016; originally announced February 2016.

Comments: 7 figures on 7 pages, accepted for publication in PRB

Journal ref: Phys. Rev. B 93, 081407 (2016)

First-principles theory of field-effect do** in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity

Authors: Thomas Brumme, Matteo Calandra, Francesco Mauri

Abstract: We investigate how field-effect do** affects the structural properties, the electronic structure and the Hall coefficient of few-layers transition metal dichalcogenides by using density-functional theory. We consider mono-, bi-, and trilayers of the H polytype of MoS2, MoSe2, MoTe2, WS2, and WSe2 and provide a full database of electronic structures and Hall coefficients for hole and electron dop… ▽ More We investigate how field-effect do** affects the structural properties, the electronic structure and the Hall coefficient of few-layers transition metal dichalcogenides by using density-functional theory. We consider mono-, bi-, and trilayers of the H polytype of MoS2, MoSe2, MoTe2, WS2, and WSe2 and provide a full database of electronic structures and Hall coefficients for hole and electron do**. We find that, for both electron and hole do**, the electronic structure depends on the number of layers and cannot be described by a rigid band shift. Furthermore, it is important to relax the structure under the asymmetric electric field. Interestingly, while the width of the conducting channel depends on the do**, the number of occupied bands at each given k point is almost uncorrelated with the thickness of the do**-charge distribution. Finally, we calculate within the constant-relaxation-time approximation the electrical conductivity and the inverse Hall coefficient. We demonstrate that in some cases the charge determined by Hall-effect measurements can deviate from the real charge by up to 50%. For hole-doped MoTe2 the Hall charge has even the wrong polarity at low temperature. We provide the map** between the do** charge and the Hall coefficient. In the appendix we present more than 250 band structures for all do** levels of the transition-metal dichalcogenides considered within this work. △ Less

Submitted 4 May, 2015; v1 submitted 28 January, 2015; originally announced January 2015.

Comments: Paper with 19 pages, 18 figures and an appendix with 48 figures (thus in total 72 pages)

Journal ref: Phys. Rev. B 91, 155436 (2015)

Electrochemical do** of few layer ZrNCl from first-principles: electronic and structural properties in field-effect configuration

Authors: Thomas Brumme, Matteo Calandra, Francesco Mauri

Abstract: We develop a first-principles theoretical approach to do** in field-effect devices. The method allows for calculation of the electronic structure as well as complete structural relaxation in field-effect configuration using density-functional theory. We apply our approach to ionic-liquid-based field-effect do** of monolayer, bilayer, and trilayer ZrNCl and analyze in detail the structural chan… ▽ More We develop a first-principles theoretical approach to do** in field-effect devices. The method allows for calculation of the electronic structure as well as complete structural relaxation in field-effect configuration using density-functional theory. We apply our approach to ionic-liquid-based field-effect do** of monolayer, bilayer, and trilayer ZrNCl and analyze in detail the structural changes induced by the electric field. We show that, contrary to what is assumed in previous experimental works, only one ZrNCl layer is electrochemically doped and that this induces large structural changes within the layer. Surprisingly, despite these structural and electronic changes, the density of states at the Fermi energy is independent of the do**. Our findings imply a substantial revision of the phase diagram of electrochemically doped ZrNCl and elucidate crucial differences with superconductivity in Li intercalated bulk ZrNCl. △ Less

Submitted 10 June, 2014; originally announced June 2014.

Comments: 15 pages, 14 figures

Journal ref: Phys. Rev. B 89, 245406 (2014)

Dynamical bi-stability of single-molecule junctions: A combined experimental/theoretical study of PTCDA on Ag(111)

Authors: Thomas Brumme, Olga Neucheva, Cormac Toher, Rafael Gutiérrez, Christian Weiss, Ruslan Temirov, Andreas Greuling, Marcin Kaczmarski, Michael Rohlfing, Stefan Tautz, Gianaurelio Cuniberti

Abstract: The dynamics of a molecular junction consisting of a PTCDA molecule between the tip of a scanning tunneling microscope and a Ag(111) surface have been investigated experimentally and theoretically. Repeated switching of a PTCDA molecule between two conductance states is studied by low-temperature scanning tunneling microscopy for the first time, and is found to be dependent on the tip-substrate di… ▽ More The dynamics of a molecular junction consisting of a PTCDA molecule between the tip of a scanning tunneling microscope and a Ag(111) surface have been investigated experimentally and theoretically. Repeated switching of a PTCDA molecule between two conductance states is studied by low-temperature scanning tunneling microscopy for the first time, and is found to be dependent on the tip-substrate distance and the applied bias. Using a minimal model Hamiltonian approach combined with density-functional calculations, the switching is shown to be related to the scattering of electrons tunneling through the junction, which progressively excite the relevant chemical bond. Depending on the direction in which the molecule switches, different molecular orbitals are shown to dominate the transport and thus the vibrational heating process. This in turn can dramatically affect the switching rate, leading to non-monotonic behavior with respect to bias under certain conditions. In this work, rather than simply assuming a constant density of states as in previous works, it was modeled by Lorentzians. This allows for the successful description of this non-monotonic behavior of the switching rate, thus demonstrating the importance of modeling the density of states realistically. △ Less

Submitted 17 October, 2011; v1 submitted 9 September, 2010; originally announced September 2010.

Comments: 20 pages, 6 figures, 1 table

Journal ref: Phys. Rev. B 84, 115449 (2011)

Visualizing the spin of individual molecules

Authors: C. Iacovita, M. V. Rastei, B. W. Heinrich, T. Brumme, J. Kortus, L. Limot, J. P. Bucher

Abstract: Low-temperature spin-polarized scanning tunneling microscopy is employed to study spin transport across single Cobalt-Phathalocyanine molecules adsorbed on well characterized magnetic nanoleads. A spin-polarized electronic resonance is identified over the center of the molecule and exploited to spatially resolve stationary spin states. These states reflect two molecular spin orientations and, as… ▽ More Low-temperature spin-polarized scanning tunneling microscopy is employed to study spin transport across single Cobalt-Phathalocyanine molecules adsorbed on well characterized magnetic nanoleads. A spin-polarized electronic resonance is identified over the center of the molecule and exploited to spatially resolve stationary spin states. These states reflect two molecular spin orientations and, as established by density functional calculations, originate from a ferromagnetic molecule-lead superexchange interaction mediated by the organic ligands. △ Less

Submitted 5 May, 2008; originally announced May 2008.