Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys
Authors:
Cyrine Ernandes,
Lama Khalil,
Hela Almabrouk,
Debora Pierucci,
Biyuan Zheng,
José Avila,
Pave Dudin,
Julien Chaste,
Fabrice Oehler,
Marco Pala,
Federico Bisti,
Thibault Brulé,
Emmanuel Lhuillier,
Anlian Pan,
Abdelkarim Ouerghi
Abstract:
In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the…
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In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1-x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono- to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1-x)Se2x, we performed a nano-angle resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1-x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1-x)Se2x opens the way for spectrally tunable light-emitting devices.
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Submitted 25 November, 2020;
originally announced November 2020.
