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FORC Diagram Features of Co Particles due to Reversal by Domain Nucleation
Authors:
Leoni Breth,
Johann Fischbacher,
Alexander Kovacs,
Harald Özelt,
Thomas Schrefl,
Hubert Brückl,
Christoph Czettl,
Saskia Kührer,
Julia Pachlhofer,
Maria Schwarz
Abstract:
First Order Reversal Curve (FORC) diagrams are a popular tool in geophysics and materials science for the characterization of magnetic particles of natural and synthetic origin. However, there is still a lot of controversy about the rigorous interpretation of the origin of certain features in a FORC diagram. In this study, we analyze FORCs computed by micromagnetic simulations of Co cubes with dim…
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First Order Reversal Curve (FORC) diagrams are a popular tool in geophysics and materials science for the characterization of magnetic particles of natural and synthetic origin. However, there is still a lot of controversy about the rigorous interpretation of the origin of certain features in a FORC diagram. In this study, we analyze FORCs computed by micromagnetic simulations of Co cubes with dimensions of 50, 100 and 150 nm and uniaxial magnetocrystalline anisotropy. For the larger cubes we observe the formation of a stable two-domain state. The nucleation of a reversed domain and its subsequent annihilation are clearly visible as separate peaks in the FORC diagram. They spread out along the coordinate axis in the FORC diagram, which is associated with the bias field $H_U$ of a Preisach hysteron. Based on our findings, we state that a FORC diagram peak spreading along the $H_U$ axis can have its origin in the step-wise magnetization reversal driven by nucleation of domains in a single particle. This means that we have identified another mechanism apart from the well-known magnetostatic interaction between a set of particles that leads to features in the FORC diagram extending along the $H_U$-axis. Our study demonstrates that if FORCs shall be used as a quantitative tool to assess the microstructure of samples containing magnetic material, more information from other methods will be required to identify the correct physical mechanism by which a certain "fingerprint" in a FORC diagram is produced.
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Submitted 22 July, 2022;
originally announced July 2022.
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Comparison of Sensitivity and Low Frequency Noise Contributions in GMR and TMR Spin Valve Sensors with a Vortex State Free Layer
Authors:
Herbert Weitensfelder,
Hubert Brueckl,
Armin Satz,
Klemens Pruegl,
Juergen Zimmer,
Sebastian Luber,
Wolfgang Raberg,
Claas Abert,
Florian Bruckner,
Anton Bachleitner-Hofmann,
Roman Windl,
Dieter Suess
Abstract:
Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state free layer enables high saturation fields with negligible hysteresis, making it attractive for applications with a high dynamic range. The measured GMR devices com…
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Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state free layer enables high saturation fields with negligible hysteresis, making it attractive for applications with a high dynamic range. The measured GMR devices comprise lower pink noise and better linearity in resistance but are less sensitive to external magnetic fields than TMR sensors. The results show a comparable detectivity at low frequencies and a better performance of the TMR minimum detectable field at frequencies in the white noise limit.
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Submitted 18 April, 2018;
originally announced April 2018.
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Topologically Protected Vortex Structures to Realize Low-Noise Magnetic Sensors
Authors:
Dieter Suess,
Anton Bachleitner-Hofmann,
Armin Satz,
Herbert Weitensfelder,
Christoph Vogler,
Florian Bruckner,
Claas Abert,
Klemens Prügl,
Jürgen Zimmer,
Christian Huber,
Sebastian Luber,
Wolfgang Raberg,
Thomas Schrefl,
Hubert Brückl
Abstract:
Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) sensors are mainly driven by their integrability and enhanced sensitivity. At the core of such sensors, a microstructured ferromagnetic thin film…
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Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) sensors are mainly driven by their integrability and enhanced sensitivity. At the core of such sensors, a microstructured ferromagnetic thin film element transduces the magnetic signal. Such elements usually switch via multi-domain, C- or S-shaped magnetization states and, therefore, often exhibit an open non-linear hysteresis curve. Linearity and hysteretic effects, as well as magnetic noise are key features in the improvement of such sensors. Here, we report on the physical origin of these disturbing factors and the inherent connection of noise and hysteresis. Critical noise sources are identified by means of analytic and micromagnetic models. The dominant noise source is due to irreproducible magnetic switching of the transducer element at external fields close to the Stoner Wohlfarth switching field. Furthermore, a solution is presented to overcome these limiting factors: a disruptive sensor design is proposed and analyzed which realizes a topologically protected magnetic vortex state in the transducer element. Compared to state of the art sensors the proposed sensor layout has negligible hysteresis, a linear regime about an order of magnitude higher and lower magnetic noise making the sensor ideal candidate for applications ranging from automotive industry to biological application.
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Submitted 19 December, 2017;
originally announced December 2017.
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Considering non-uniform current distributions in magnetoresistive sensor designs and their implications for the resistance transfer function
Authors:
Anton Bachleitner-Hofmann,
Claas Abert,
Hubert Brückl,
Armin Satz,
Tobias Wurft,
Wolfgang Raberg,
Clemens Prügl,
Dieter Suess
Abstract:
Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel channels of high and low resistivity. The readout current is thus able to evade high resistivity regions in favor of low resistivity regions, giving rise to 'condu…
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Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel channels of high and low resistivity. The readout current is thus able to evade high resistivity regions in favor of low resistivity regions, giving rise to 'conductive inhomogeneities'. Therefore, the total resistance of the spin valve does not always correspond exactly to the total average magnetization of the free layer. In addition, the resistance transfer function can be significantly influenced by the spatial placement of the electrodes, giving rise to 'geometric inhomogeneities'. The resulting deviations from resistance to magnetization transfer function are investigated for different spin valve geometries and compared to measurements of comparable devices.
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Submitted 19 September, 2017;
originally announced September 2017.
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A Device model for xMR Sensors based on the Stoner-Wohlfarth model
Authors:
Florian Bruckner,
Bernhard Bergmair,
Hubert Brueckl,
Pietro Palmesi,
Anton Buder,
Armin Satz,
Dieter Suess
Abstract:
The Stoner-Wohlfarth model provides an efficient analytical model to describe the behavior of magnetic layers within xMR sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which co…
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The Stoner-Wohlfarth model provides an efficient analytical model to describe the behavior of magnetic layers within xMR sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which contains measured resistances for different applied fields. Several application cases are examined and used for validation of the device model. Furthermore the applicability of the SW model is verified by comparison with micromagnetic energy minimization results.
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Submitted 22 August, 2014;
originally announced August 2014.
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Simulation of magnetic active polymers for versatile microfluidic devices
Authors:
Markus Gusenbauer,
Harald Özelt,
Johann Fischbacher,
Franz Reichel,
Lukas Exl,
Simon Bance,
Nadezhda Kataeva,
Claudia Binder,
Hubert Brückl,
Thomas Schrefl
Abstract:
We propose to use a compound of magnetic nanoparticles (20-100 nm) embedded in a flexible polymer (Polydimethylsiloxane PDMS) to filter circulating tumor cells (CTCs). The analysis of CTCs is an emerging tool for cancer biology research and clinical cancer management including the detection, diagnosis and monitoring of cancer. The combination of experiments and simulations lead to a versatile micr…
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We propose to use a compound of magnetic nanoparticles (20-100 nm) embedded in a flexible polymer (Polydimethylsiloxane PDMS) to filter circulating tumor cells (CTCs). The analysis of CTCs is an emerging tool for cancer biology research and clinical cancer management including the detection, diagnosis and monitoring of cancer. The combination of experiments and simulations lead to a versatile microfluidic lab-on-chip device. Simulations are essential to understand the influence of the embedded nanoparticles in the elastic PDMS when applying a magnetic gradient field. It combines finite element calculations of the polymer, magnetic simulations of the embedded nanoparticles and the fluid dynamic calculations of blood plasma and blood cells. With the use of magnetic active polymers a wide range of tunable microfluidic structures can be created. The method can help to increase the yield of needed isolated CTCs.
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Submitted 30 May, 2013;
originally announced May 2013.
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Fundamental switching field distribution of a single domain particle derived from the Néel-Brown model
Authors:
Leoni Breth,
Dieter Suess,
Christoph Vogler,
Bernhard Bergmair,
Markus Fuger,
Rudolf Heer,
Hubert Brueckl
Abstract:
We present an analytical derivation of the switching field distribution for a single domain particle from the Néel-Brown model in the presence of a linearly swept magnetic field and influenced by thermal fluctuations. We show that the switching field distribution corresponds to a probability density function and can be obtained by solving a master equation for the not-switching probability togethe…
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We present an analytical derivation of the switching field distribution for a single domain particle from the Néel-Brown model in the presence of a linearly swept magnetic field and influenced by thermal fluctuations. We show that the switching field distribution corresponds to a probability density function and can be obtained by solving a master equation for the not-switching probability together with the transition rate for the magnetization according to the Arrhenius-Néel Law. By calculating the first and second moments of the probability density function we succeed in modeling rate-dependent coercivity and the standard deviation of the coercive field. Complementary to the analytical approach, we also present a Monte Carlo simulation for the switching of a macrospin, which allows us to account for the field dependence of the attempt frequency. The results show excellent agreement with results from a Langevin dynamics simulation and therefore point out the importance to include the relevant dependencies in the attempt frequency. However, we conclude that the Néel-Brown model fails to predict switching fields correctly for common field rates and material parameters used in magnetic recording from the loss of normalization of the probability density function. Investigating the transition regime between thermally assisted and dynamic switching will be of future interest regarding the development of new magnetic recording technologies.
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Submitted 31 October, 2011;
originally announced October 2011.
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Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions
Authors:
R. Guerrero,
F. G. Aliev,
R. Villar,
J. Hauch,
M. Fraune,
G. Guntherodt,
K. Rott,
H. Bruckl,
G. Reiss
Abstract:
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The evaluated MgO energy barrier (0.50+/-0.08 eV), the barrier width (13.1+/-0.5 angstrom) as well as the resistance times area product (7+/-1 Mohmsum2) show relatively s…
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We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The evaluated MgO energy barrier (0.50+/-0.08 eV), the barrier width (13.1+/-0.5 angstrom) as well as the resistance times area product (7+/-1 Mohmsum2) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. The noise power, though exhibiting large variation, was observed to be roughly anticorrelated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behaviour could be related to an interplay between the magnetic state and the local barrier defects structure of the epitaxial MTJs
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Submitted 18 September, 2006;
originally announced September 2006.
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Magnetic properties of antiferromagnetically coupled CoFeB/Ru/CoFeB
Authors:
N. Wiese,
T. Dimopoulos,
M. Ruhrig,
J. Wecker,
H. Bruckl,
G. Reiss
Abstract:
This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost independent on the annealing temperature up to more than 300 degree C. An annealing at more than 325 degree C significantly increases the coercivity, Hc, indicating the…
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This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost independent on the annealing temperature up to more than 300 degree C. An annealing at more than 325 degree C significantly increases the coercivity, Hc, indicating the onset of crystallization.
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Submitted 28 September, 2005;
originally announced September 2005.
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Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers
Authors:
N. Wiese,
T. Dimopoulos,
M. Ruhrig,
J. Wecker,
H. Bruckl,
G. Reiss
Abstract:
This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x=1.0 to 1.1 nm. We have studied the switching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and found that the coerci…
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This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x=1.0 to 1.1 nm. We have studied the switching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and found that the coercivity depends on the net magnetic moment, i.e. the thickness difference of the two CoFeB layers. The antiferromagnetic coupling is almost independent on the annealing temperatures up to 300 degree C while an annealing at 350 degree C reduces the coupling and increases the coercivity, indicating the onset of crystallization. Used as a soft electrode in a magnetic tunnel junction, a high tunneling magnetoresistance of about 50%, a well defined plateau and a rectangular switching behavior is achieved.
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Submitted 28 September, 2005;
originally announced September 2005.
