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Terahertz emission from $α$-W/CoFe epitaxial spintronic emitters
Authors:
Venkatesh Mottamchetty,
Rimantas Brucas,
Anna L. Ravensburg,
Rahul Gupta,
Arne Roos,
Cheuk Wai Tai,
Vassilios Kapaklis,
Peter Svedlindh
Abstract:
We report efficient terahertz (THz) generation in epitaxial $α$-W/Co$_6$0Fe$_4$0 spintronic emitters. Two types of emitters have been investigated; epitaxial $α$-W(110)/Co$_6$0Fe$_4$0(110) and $α$-W(001)/Co$_6$0Fe$_4$0(001) deposited on single crystalline Al$_2$O$_3$(11-20) and MgO(001) substrates, respectively. The generated THz radiation is about 10% larger for $α$-W(110)/Co$_6$0Fe$_4$0(110) gro…
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We report efficient terahertz (THz) generation in epitaxial $α$-W/Co$_6$0Fe$_4$0 spintronic emitters. Two types of emitters have been investigated; epitaxial $α$-W(110)/Co$_6$0Fe$_4$0(110) and $α$-W(001)/Co$_6$0Fe$_4$0(001) deposited on single crystalline Al$_2$O$_3$(11-20) and MgO(001) substrates, respectively. The generated THz radiation is about 10% larger for $α$-W(110)/Co$_6$0Fe$_4$0(110) grown on single crystalline Al$_2$O$_3$(11-20), which is explained by the fact that the $α$-W(110)/Co$_6$0Fe$_4$0(110) interface for this emitter is more transparent to the spin current due to the presence of Angstrom-scale interface intermixing at the W/CoFe interface. Our results also reveal that the generation of THz radiation is larger when pum** with the laser light from the substrate side, which is explained by a larger part of the laser light due to interference effects in the film stack being absorbed in the ferromagnetic Co$_6$0Fe$_4$0 layer in this measurement configuration.
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Submitted 18 January, 2024;
originally announced January 2024.
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Boundary-induced phase in epitaxial iron layers
Authors:
Anna L. Ravensburg,
Mirosław Werwiński,
Justyna Rychły-Gruszecka,
Justyn Snarski-Adamski,
Anna Elsukova,
Per O. Å. Persson,
Ján Rusz,
Rimantas Brucas,
Björgvin Hjövarsson,
Peter Svedlindh,
Gunnar K. Pálsson,
Vassilios Kapaklis
Abstract:
We report the discovery of a boundary-induced body-centered tetragonal (bct) iron phase in thin films deposited on MgAl$_{2}$O$_{4}$ ($001$) substrates. We present evidence for this phase using detailed x-ray analysis and ab-initio density functional theory calculations. A lower magnetic moment and a rotation of the easy magnetisation direction are observed, as compared to body-centered cubic (bcc…
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We report the discovery of a boundary-induced body-centered tetragonal (bct) iron phase in thin films deposited on MgAl$_{2}$O$_{4}$ ($001$) substrates. We present evidence for this phase using detailed x-ray analysis and ab-initio density functional theory calculations. A lower magnetic moment and a rotation of the easy magnetisation direction are observed, as compared to body-centered cubic (bcc) iron. Our findings expand the range of known crystal and magnetic phases of iron, providing valuable insights for the development of heterostructure devices using ultra-thin iron layers.
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Submitted 11 January, 2024;
originally announced January 2024.
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Epitaxy enhancement in oxide/tungsten heterostructures by harnessing the interface adhesion
Authors:
Anna L. Ravensburg,
Rimantas Brucas,
Denis Music,
Lennart Spode,
Gunnar K. Pálsson,
Peter Svedlindh,
Vassilios Kapaklis
Abstract:
The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed f…
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The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed for tungsten grown on the sapphire substrates. This is promoted by stronger adhesion and chemical bonding with sapphire compared to magnesium oxide, along with the restructuring of the tungsten layers close to the interface. The latter is supported by ab initio calculations using density functional theory. Finally, we demonstrate the growth of magnetic heterostructures consisting of high-quality tungsten layers in combination with ferromagnetic CoFe layers, which are relevant for spintronic applications.
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Submitted 30 November, 2023; v1 submitted 21 June, 2023;
originally announced June 2023.
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Direct evidence of terahertz emission arising from anomalous Hall effect
Authors:
V. Mottamchetty,
P. Rani,
R. Brucas,
A. Rydberg,
P. Svedlindh,
R. Gupta
Abstract:
A detailed understanding of the different mechanisms being responsible for terahertz (THz) emission in ferromagnetic (FM) materials will aid in designing efficient THz emitters. In this report, we present direct evidence of THz emission from single layer Co$_{0.4}$Fe$_{0.4}$B$_{0.2}$ (CoFeB) FM thin films. The dominant mechanism being responsible for the THz emission is the anomalous Hall effect (…
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A detailed understanding of the different mechanisms being responsible for terahertz (THz) emission in ferromagnetic (FM) materials will aid in designing efficient THz emitters. In this report, we present direct evidence of THz emission from single layer Co$_{0.4}$Fe$_{0.4}$B$_{0.2}$ (CoFeB) FM thin films. The dominant mechanism being responsible for the THz emission is the anomalous Hall effect (AHE), which is an effect of a net backflow current in the FM layer created by the spin-polarized current reflected at the interfaces of the FM layer. The THz emission from the AHE-based CoFeB emitter is optimized by varying its thickness, orientation, and pump fluence of the laser beam. Results from electrical transport measurements show that skew scattering of charge carriers is responsible for the THz emission in the CoFeB AHE-based THz emitter.
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Submitted 7 April, 2023; v1 submitted 14 February, 2023;
originally announced February 2023.
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Strain Engineering of Epitaxial Pt/Fe Spintronic Terahertz Emitter
Authors:
Rahul Gupta,
Ebrahim Bagherikorani,
Venkatesh Mottamchetty,
Martin Pavelka,
Kasturie Jatkar,
Dragos Dancila,
Karim Mohammadpour-Aghdam,
Anders Rydberg,
Rimantas Brucas,
Hermann A. Dürr,
Peter Svedlindh
Abstract:
Spin-based terahertz (THz) emitters, utilizing the inverse spin Hall effect, are ultra-modern sources for the generation of THz electromagnetic radiation. To make a powerful emitter having large THz amplitude and bandwidth, fundamental understanding in terms of microscopic models is essential. This study reveals important factors to engineer the THz emission amplitude and bandwidth in epitaxial Pt…
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Spin-based terahertz (THz) emitters, utilizing the inverse spin Hall effect, are ultra-modern sources for the generation of THz electromagnetic radiation. To make a powerful emitter having large THz amplitude and bandwidth, fundamental understanding in terms of microscopic models is essential. This study reveals important factors to engineer the THz emission amplitude and bandwidth in epitaxial Pt/Fe emitters grown on MgO and MgAl$_2$O$_4$ (MAO) substrates, where the choice of the substrate plays an important role. The THz amplitude and bandwidth are affected by the induced strain in the Fe spin source layer. On the one hand, the THz electric field amplitude is found to be larger when Pt/Fe is grown on MgO even though the crystalline quality of the Fe film is superior when grown on MAO. This is because of the larger defect density, smaller electron relaxation time, and lower electrical conductivity in the THz regime when Fe is grown on MgO. On the other hand, the bandwidth is found to be larger for Pt/Fe grown on MAO and is explained by the uncoupled/coupled Lorentz oscillator models. This study provides an insightful pathway to further engineer metallic spintronic THz emitters in terms of the proper choice of substrate and microscopic properties of the emitter layers.
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Submitted 4 October, 2021;
originally announced October 2021.
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Giant spin-orbit torque efficiency in all-epitaxial heterostructures
Authors:
Nilamani Behera,
Rahul Gupta,
Sajid Husain,
Jitendra Saha,
Rajasekhar Pothala,
Vineet Barwal,
Vireshwar Mishra,
Gabriella Andersson,
Dinesh K. Pandya,
Sujeet Chaudhary,
Rimantas Brucas,
Peter Svedlindh,
Ankit Kumar
Abstract:
A large anti-dam** spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-dam** torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96…
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A large anti-dam** spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-dam** torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96 (27.50) mT at an applied current density of 1 MAcm-2 in beta-W interfaced Co60Fe40 (Ni81Fe19)/TiN epitaxial structures due to an anti-dam** like torque, which results in a magnetization auto-oscillation current density as low as 1.68(3.27) MAcm-2. The spin-orbit field value increases with decrease of beta-W layer thickness, which affirms that epitaxial surface states are responsible for the extraordinary large efficiency. SOT induced energy efficient in-plane magnetization switching in large 20x100 um2 structures has been demonstrated by Kerr microscopy and the findings are supported by results from micromagnetic simulations. The observed giant SOT efficiencies in the studied all-epitaxial heterostructures are comparable to values reported for topological insulators. These results confirm that by utilizing epitaxial material combinations an extraordinary large SOT efficiency can be achieved using semiconducting industry compatible 5d heavy metals, which provides immediate solutions for the realization of energy efficient spin-logic devices.
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Submitted 19 April, 2021;
originally announced April 2021.
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Co$_2$FeAl full Heusler compound based spintronic terahertz emitter
Authors:
Rahul Gupta,
Sajid Husain,
Ankit Kumar,
Rimantas Brucas,
Anders Rydberg,
Peter Svedlindh
Abstract:
To achieve a large terahertz (THz) amplitude from a spintronic THz emitter (STE), materials with 100\% spin polarisation such as Co-based Heusler compounds as the ferromagnetic layer are required. However, these compounds are known to loose their half-metallicity in the ultrathin film regime, as it is difficult to achieve L2$_1$ ordering, which has become a bottleneck for the film growth. Here, th…
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To achieve a large terahertz (THz) amplitude from a spintronic THz emitter (STE), materials with 100\% spin polarisation such as Co-based Heusler compounds as the ferromagnetic layer are required. However, these compounds are known to loose their half-metallicity in the ultrathin film regime, as it is difficult to achieve L2$_1$ ordering, which has become a bottleneck for the film growth. Here, the successful deposition using room temperature DC sputtering of the L2$_1$ and B2 ordered phases of the Co$_2$FeAl full Heusler compound is reported. Co$_2$FeAl is used as ferromagnetic layer together with highly orientated Pt as non-ferromagnetic layer in the Co$_2$FeAl/Pt STE, where an MgO(10 nm) seed layer plays an important role to achieve the L2$_1$ and B2 ordering of Co$_2$FeAl. The generation of THz radiation in the CFA/Pt STE is presented, which has a bandwidth in the range of 0.1-4 THz. The THz electric field amplitude is optimized with respect to thickness, orientation, and growth parameters using a thickness dependent model considering the optically induced spin current, superdiffusive spin current, inverse spin Hall effect and the attenuation of THz radiation in the layers. This study, based on the full Heusler Co$_2$FeAl compound opens up a plethora possibilities in STE research involving full Heusler compounds.
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Submitted 26 January, 2021;
originally announced January 2021.
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Dam**-like Torque in Monolayer 1T-TaS$_2$
Authors:
Sajid Husain,
Xin Chen,
Rahul Gupta,
Nilamani Behera,
Prabhat Kumar,
Tomas Edvinsson,
Felipe Garcia Sanchez,
Rimantas Brucas,
Sujeet Chaudhary,
Biplab Sanyal,
Peter Svedlindh,
Ankit Kumar
Abstract:
A dam**-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$…
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A dam**-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $Ω^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large dam**-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of dam**-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.
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Submitted 6 April, 2020;
originally announced April 2020.
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Impact of the crystal orientation on spin-orbit torques in Fe/Pd bilayers
Authors:
Ankit Kumar,
Nilamani Behera,
Rahul Gupta,
Sajid Husain,
Henry Stopfel,
Vassilios Kapaklis,
Rimantas Brucas,
Peter Svedlindh
Abstract:
Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the dam**-li…
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Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the dam**-like torque efficiency is higher in epitaxial than in polycrystalline bilayer structures while the field-like torque is negligible in all bilayer structures. The strength of the dam**-like torque decreases with deterioration of the bilayer epitaxial quality. The present finding provides fresh insight for the enhancement of spin-orbit torques in magnetic heterostructures.
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Submitted 13 November, 2019;
originally announced November 2019.
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Spin pum** and spin torque in interfacial tailored Co2FeAl/\b{eta}-Ta layers
Authors:
Ankit Kumar,
Rahul Gupta,
Sajid Husain,
Nilamani Behera,
Soumyarup Hait,
Sujeet Chaudhary,
Rimantas Brucas,
Peter Svedlindh
Abstract:
The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular momentum transfer across the FM/NM interface; hence, requiring low spin memory loss and high spin-mixing conductance. To highlight this issue, spin pum** and s…
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The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular momentum transfer across the FM/NM interface; hence, requiring low spin memory loss and high spin-mixing conductance. To highlight this issue, spin pum** and spin-transfer torque ferromagnetic resonance measurements have been performed on Co_2FeAl/β-Ta heterostructures tailored with Cu interfacial layers. The interface tailored structure yields an enhancement of the effective spin-mixing conductance. The interface transparency and spin memory loss corrected values of the spin-mixing conductance, spin Hall angle and spin diffusion length are found to be 3.40 \pm 0.01 \times 10^{19} m^{-2}, 0.029 \pm 0.003, and 2.3 \pm 0.5 nm, respectively. Furthermore, a high current modulation of the effective dam** of around 2.1 % has been achieved at an applied current density of 1 \times 10^9 A/m^2 , which clearly indicates the potential of using this heterostructure for energy efficient control in spin devices
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Submitted 2 October, 2019; v1 submitted 2 April, 2019;
originally announced April 2019.
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Engineering of spin mixing conductance in Ru/FeCo/Ru interfaces: Effect of Re Do**
Authors:
Rahul Gupta,
Nilamani Behera,
Vijay A. Venugopal,
Swaraj Basu,
Mark A. Gubbins,
Lars Bergqvist,
Rimantas Brucas,
Peter Svedlindh,
Ankit Kumar
Abstract:
We have deposited polycrystalline Re doped $(Fe_{65}Co_{35})_{100-x}Re_{x}$ (0 $\leq$ x $\leq$ 12.6 at\%) thin films grown under identical conditions and sandwiched between thin layers of Ru in order to study the phenomenon of spin pum** as a function of Re concentration. In-plane and out-of-plane ferromagnetic resonance spectroscopy results show an enhancement of the Gilbert dam** with an inc…
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We have deposited polycrystalline Re doped $(Fe_{65}Co_{35})_{100-x}Re_{x}$ (0 $\leq$ x $\leq$ 12.6 at\%) thin films grown under identical conditions and sandwiched between thin layers of Ru in order to study the phenomenon of spin pum** as a function of Re concentration. In-plane and out-of-plane ferromagnetic resonance spectroscopy results show an enhancement of the Gilbert dam** with an increase in Re do**. We found evidence of an increase in the real part of effective spin mixing conductance [Re($g^{\uparrow\downarrow}_{eff}$)] with the increase in Re do** of 6.6 at\%, while a decrease is evident at higher Re do**. The increase in Re($g^{\uparrow\downarrow}_{eff}$) can be linked to the Re do** induced change of the interface electronic structure in the non-magnetic Ru layer and the effect interfacial spin-orbit coupling has on the effective spin-mixing conductance. The lowest and highest values of Re($g^{\uparrow\downarrow}_{eff}$) are found to be 9.883(02) $nm^{-2}$ and 19.697(02) $nm^{-2}$ for 0 at\% and 6.6 at\% Re do**, respectively. The saturation magnetization decreases with increasing Re do**, from 2.362(13) T for the undoped film to 1.740(03) T for 12.6 at\% Re do**. This study opens a new direction of tuning the spin-mixing conductance in magnetic heterostructures by do** of the ferromagnetic layerr, which is essential for the realization of energy efficient operation of spintronic devices.
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Submitted 2 October, 2019; v1 submitted 26 March, 2019;
originally announced March 2019.
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Extraordinary efficient spin-orbit torque switching in (W, Ta)/epitaxial-Co60Fe40/TiN heterostructures
Authors:
Nilamani Behera,
Rahul Gupta,
Sajid Husain,
Vineet Barwal,
Dinesh K. Pandya,
Sujeet Chaudhary,
Rimantas Brucas,
Peter Svedlindh,
Ankit Kumar
Abstract:
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21)…
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The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces.
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Submitted 2 October, 2019; v1 submitted 8 March, 2019;
originally announced March 2019.
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Enhanced Gilbert Dam** in Re doped FeCo Films: A Combined Experimental and Theoretical Study
Authors:
Serkan Akansel,
Ankit Kumar,
Vijayahahan A. Venugopal,
Rudra Banerjee,
Carmine Autieri,
Rimantas Brucas,
Nilamani Behera,
Mauricio A. Sortica,
Daniel Primetzhofer,
Swaraj Basu,
Mark A. Gubbins,
Biplab Sanyal,
Peter Svedlindh
Abstract:
The effects of rhenium do** in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focusing on the change of the saturation magnetization and the Gilbert dam** parameter. Both experimental and theoretical results show that the saturation magnetiz…
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The effects of rhenium do** in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focusing on the change of the saturation magnetization and the Gilbert dam** parameter. Both experimental and theoretical results show that the saturation magnetization decreases with increasing Re do** level, while at the same time Gilbert dam** parameter increases. The experimental low temperature saturation magnetic induction exhibits a 29 percent decrease, from 2.31 T to 1.64 T, in the investigated do** concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the dam** parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the dam**, is for the undoped sample 0.0027, which is close to the theoretically calculated Gilbert dam** parameter. With 10 atomic percent Re do**, the dam** parameter increases to 0.0090, which is in good agreement with the theoretical value of 0.0073. The increase in dam** parameter with Re do** is explained by the increase in density of states at Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the dam** parameter are observed to be weakly decreasing with decreasing temperature.
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Submitted 26 February, 2019;
originally announced February 2019.
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Collective magnetization dynamics in nano-arrays of thin FePd discs
Authors:
Agne Ciuciulkaite,
Erik Östman,
Rimantas Brucas,
Ankit Kumar,
Marc A. Verschuuren,
Peter Svedlindh,
Björgvin Hjörvarsson,
Vassilios Kapaklis
Abstract:
We report on the magnetization dynamics of a square array of mesoscopic discs, fabricated from an iron palladium alloy film. The dynamics properties were explored using ferromagnetic resonance measurements and micromagnetic simulations. The obtained spectra exhibit features resulting from the interactions between the discs, with a clear dependence on both temperature and the direction of the exter…
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We report on the magnetization dynamics of a square array of mesoscopic discs, fabricated from an iron palladium alloy film. The dynamics properties were explored using ferromagnetic resonance measurements and micromagnetic simulations. The obtained spectra exhibit features resulting from the interactions between the discs, with a clear dependence on both temperature and the direction of the externally applied field. We demonstrate a qualitative agreement between the measured and calculated spectra. Furthermore, we calculated the mode profiles of the standing spin waves excited during a time-dependent magnetic field excitations. The resulting maps confirm that the features appearing in the ferromagnetic resonance absorption spectra originate from the temperature and directional dependent inter-disc interactions.
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Submitted 1 February, 2019;
originally announced February 2019.
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Effect of in-situ electric field assisted growth on anti-phase boundaries in epitaxial Fe3O4 thin films on MgO
Authors:
Ankit Kumar,
Erik Wetterskog,
Erik Lewin,
Cheuk-Wai Tai,
Serkan Akansel,
Sajid Husain,
Tomas Edvinsson,
Rimantas Brucas,
Sujeet Chaudhary,
Peter Svedlindh
Abstract:
Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APB…
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Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APBs in hetero epitaxial Fe3O4(100)/MgO(100) thin films have been explored in the present work. The electric field assisted growth is found to reduce the AF interactions across APBs and as a consequence APBs free thin film like properties are obtained, which have been probed by electronic, magnetic and structural characterization. An increase in energy associated with the nucleation and/or early stage of the growth and, therefore, a corresponding increase in surface mobility of the ad-atoms play a critical role in controlling the density of APBs. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs.
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Submitted 4 January, 2018;
originally announced January 2018.
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Temperature-dependent Gilbert dam** of Co2FeAl thin films with different degree of atomic order
Authors:
Ankit Kumar,
Fan Pan,
Sajid Husain,
Serkan Akansel,
Rimantas Brucas,
Lars Bergqvist,
Sujeet Chaudhary,
Peter Svedlindh
Abstract:
Half-metallicity and low magnetic dam** are perpetually sought for in spintronics materials and full Heusler alloys in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler alloys thin films and theory has struggled to establish a fundamentals understanding of the temperature dependent Gilbert dam** i…
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Half-metallicity and low magnetic dam** are perpetually sought for in spintronics materials and full Heusler alloys in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler alloys thin films and theory has struggled to establish a fundamentals understanding of the temperature dependent Gilbert dam** in these systems. Here we present a study of the temperature dependent Gilbert dam** of differently ordered as-deposited Co2FeAl full Heusler alloy thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states govern the Gilbert dam** for the well-ordered phase in contrast to the dam** of partially-ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room temperature intrinsic dam** observed for the well-ordered phase provide new fundamental insights to the physical origin of the Gilbert dam** in full Heusler alloy thin films.
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Submitted 1 September, 2017; v1 submitted 14 June, 2017;
originally announced June 2017.
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Tailoring the magnetodynamic properties of nanomagnets using magnetocrystalline and shape anisotropies
Authors:
Vegard Flovik,
Ferran Macià,
Joan Manel Hernàndez,
Rimantas Brucas,
Maj Hanson,
Erik Wahlstrôm
Abstract:
Magnetodynamical properties of nanomagnets are affected by the demagnetizing fields created by the same nanoelements. In addition, magnetocrystalline anisotropy produces an effective field that also contributes to the spin dynamics. In this article we show how the dimensions of magnetic elements can be used to balance crystalline and shape anisotropies, and that this can be used to tailor the magn…
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Magnetodynamical properties of nanomagnets are affected by the demagnetizing fields created by the same nanoelements. In addition, magnetocrystalline anisotropy produces an effective field that also contributes to the spin dynamics. In this article we show how the dimensions of magnetic elements can be used to balance crystalline and shape anisotropies, and that this can be used to tailor the magnetodynamic properties. We study ferromagnetic ellipses patterned from a 10 nm thick epitaxial Fe film with dimensions ranging from 50 x 150 nm to 150 x 450 nm. The study combines ferromagnetic resonance (FMR) spectroscopy with analytical calculations and micromagnetic simulations, and proves that the dynamical properties can be effectively controlled by changing the size of the nanomagnets. We also show how edge defects in the samples influence the magnetization dynamics. Dynamical edge modes localized along the sample edges are strongly influenced by edge defects, and this needs to be taken into account in understanding the full FMR spectrum
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Submitted 27 August, 2015; v1 submitted 21 April, 2015;
originally announced April 2015.
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Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers
Authors:
J. Sadowski,
M. Adell,
J. Kanski,
L. Ilver,
E. Janik,
E. Lusakowska,
J. Z. Domagala,
R. Brucas,
M. Hanson
Abstract:
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnA…
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Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As cap**. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth.
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Submitted 4 April, 2005; v1 submitted 4 April, 2005;
originally announced April 2005.
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Proximity effect of vanadium on spin-density-wave magnetism in Cr films
Authors:
E. Kravtsov,
R. Brucas,
B. Hjorvarsson,
A. Hoser,
A. Nefedov,
F. Radu,
A. Remhof,
S. Wilkins
Abstract:
The spin-density wave (SDW) state in thin chromium films is well known to be strongly affected by proximity effects from neighboring layers. To date the main attention has been given to effects arising from exchange interactions at interfaces. In the present work we report on combined neutron and synchrotron scattering studies of proximity effects in Cr/V films where the boundary condition is du…
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The spin-density wave (SDW) state in thin chromium films is well known to be strongly affected by proximity effects from neighboring layers. To date the main attention has been given to effects arising from exchange interactions at interfaces. In the present work we report on combined neutron and synchrotron scattering studies of proximity effects in Cr/V films where the boundary condition is due to the hybridization of Cr with paramagnetic V at the interface. We find that the V/Cr interface has a strong and long-range effect on the polarization, period, and the Néel temperature of the SDW in rather thick Cr films. This unusually strong effect is unexpected and not predicted by theory.
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Submitted 3 June, 2004;
originally announced June 2004.
