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Autonomous estimation of high-dimensional Coulomb diamonds from sparse measurements
Authors:
Anasua Chatterjee,
Fabio Ansaloni,
Torbjørn Rasmussen,
Bertram Brovang,
Federico Fedele,
Heorhii Bohuslavskyi,
Oswin Krause,
Ferdinand Kuemmeth
Abstract:
Quantum dot arrays possess ground states governed by Coulomb energies, utilized prominently by singly occupied quantum dots, each implementing a spin qubit. For such quantum processors, the controlled transitions between ground states are of operational significance, as these allow the control of quantum information within the array such as qubit initialization and entangling gates. For few-dot ar…
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Quantum dot arrays possess ground states governed by Coulomb energies, utilized prominently by singly occupied quantum dots, each implementing a spin qubit. For such quantum processors, the controlled transitions between ground states are of operational significance, as these allow the control of quantum information within the array such as qubit initialization and entangling gates. For few-dot arrays, ground states are traditionally mapped out by performing dense raster-scan measurements in control-voltage space. These become impractical for larger arrays due to the large number of measurements needed to sample the high-dimensional gate-voltage hypercube and the comparatively little information extracted. We develop a hardware-triggered detection method based on reflectometry, to acquire measurements directly corresponding to transitions between ground states. These measurements are distributed sparsely within the high-dimensional voltage space by executing line searches proposed by a learning algorithm. Our autonomous software-hardware algorithm accurately estimates the polytope of Coulomb blockade boundaries, experimentally demonstrated in a 2$\times$2 array of silicon quantum dots.
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Submitted 21 December, 2022; v1 submitted 24 August, 2021;
originally announced August 2021.
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Estimation of Convex Polytopes for Automatic Discovery of Charge State Transitions in Quantum Dot Arrays
Authors:
Oswin Krause,
Torbjørn Rasmussen,
Bertram Brovang,
Anasua Chatterjee,
Ferdinand Kuemmeth
Abstract:
In spin based quantum dot arrays, material or fabrication imprecisions affect the behaviour of the device, which must be taken into account when controlling it. This requires measuring the shape of specific convex polytopes. In this work, we present an algorithm that automatically discovers count, shape and size of the facets of a convex polytope from measurements. Results on simulated devices as…
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In spin based quantum dot arrays, material or fabrication imprecisions affect the behaviour of the device, which must be taken into account when controlling it. This requires measuring the shape of specific convex polytopes. In this work, we present an algorithm that automatically discovers count, shape and size of the facets of a convex polytope from measurements. Results on simulated devices as well as a real 2x2 spin qubit array show that we can reliably find the facets of the convex polytopes, including small facets with sizes on the order of the measurement precision.
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Submitted 24 May, 2022; v1 submitted 20 August, 2021;
originally announced August 2021.
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Gate reflectometry in dense quantum dot arrays
Authors:
Fabio Ansaloni,
Heorhii Bohuslavskyi,
Federico Fedele,
Torbjørn Rasmussen,
Bertram Brovang,
Fabrizio Berritta,
Amber Heskes,
**g Li,
Louis Hutin,
Benjamin Venitucci,
Benoit Bertrand,
Maud Vinet,
Yann-Michel Niquet,
Anasua Chatterjee,
Ferdinand Kuemmeth
Abstract:
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Uti…
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Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2$\times$N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors.
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Submitted 5 June, 2023; v1 submitted 8 December, 2020;
originally announced December 2020.
