Showing 1–50 of 65 results for author: Brocks, G

Temperature-Dependent Chirality in Halide Perovskites

Authors: Mike Pols, Geert Brocks, Sofía Calero, Shuxia Tao

Abstract: Using chiral organic cations in two-dimensional metal halide perovskites, chirality can be induced in the metal halide layers, which results in semiconductors with intriguing chiral optical and spin-selective transport properties. The chiral properties strongly depend on temperature, despite the basic crystal symmetry not changing fundamentally. We identify a set of descriptors that characterize t… ▽ More Using chiral organic cations in two-dimensional metal halide perovskites, chirality can be induced in the metal halide layers, which results in semiconductors with intriguing chiral optical and spin-selective transport properties. The chiral properties strongly depend on temperature, despite the basic crystal symmetry not changing fundamentally. We identify a set of descriptors that characterize the chirality of metal halide perovskites such as MBA$_{2}$PbI$_{4}$, and study their temperature dependence using molecular dynamics simulations with on-the-fly machine-learning force fields obtained from density functional theory calculations. We find that, whereas the organic cations remain chiral upon increasing the temperature, the inorganic framework loses this property more rapidly. We ascribe this to the breaking of hydrogen bonds that link the organic with the inorganic substructures, which leads to a loss of chirality transfer. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 16 pages, 4 figures

A Robust Ensemble Algorithm for Ischemic Stroke Lesion Segmentation: Generalizability and Clinical Utility Beyond the ISLES Challenge

Authors: Ezequiel de la Rosa, Mauricio Reyes, Sook-Lei Liew, Alexandre Hutton, Roland Wiest, Johannes Kaesmacher, Uta Hanning, Arsany Hakim, Richard Zubal, Waldo Valenzuela, David Robben, Diana M. Sima, Vincenzo Anania, Arne Brys, James A. Meakin, Anne Mickan, Gabriel Broocks, Christian Heitkamp, Shengbo Gao, Kongming Liang, Ziji Zhang, Md Mahfuzur Rahman Siddiquee, Andriy Myronenko, Pooya Ashtari, Sabine Van Huffel , et al. (33 additional authors not shown)

Abstract: Diffusion-weighted MRI (DWI) is essential for stroke diagnosis, treatment decisions, and prognosis. However, image and disease variability hinder the development of generalizable AI algorithms with clinical value. We address this gap by presenting a novel ensemble algorithm derived from the 2022 Ischemic Stroke Lesion Segmentation (ISLES) challenge. ISLES'22 provided 400 patient scans with ischemi… ▽ More Diffusion-weighted MRI (DWI) is essential for stroke diagnosis, treatment decisions, and prognosis. However, image and disease variability hinder the development of generalizable AI algorithms with clinical value. We address this gap by presenting a novel ensemble algorithm derived from the 2022 Ischemic Stroke Lesion Segmentation (ISLES) challenge. ISLES'22 provided 400 patient scans with ischemic stroke from various medical centers, facilitating the development of a wide range of cutting-edge segmentation algorithms by the research community. Through collaboration with leading teams, we combined top-performing algorithms into an ensemble model that overcomes the limitations of individual solutions. Our ensemble model achieved superior ischemic lesion detection and segmentation accuracy on our internal test set compared to individual algorithms. This accuracy generalized well across diverse image and disease variables. Furthermore, the model excelled in extracting clinical biomarkers. Notably, in a Turing-like test, neuroradiologists consistently preferred the algorithm's segmentations over manual expert efforts, highlighting increased comprehensiveness and precision. Validation using a real-world external dataset (N=1686) confirmed the model's generalizability. The algorithm's outputs also demonstrated strong correlations with clinical scores (admission NIHSS and 90-day mRS) on par with or exceeding expert-derived results, underlining its clinical relevance. This study offers two key findings. First, we present an ensemble algorithm (https://github.com/Tabrisrei/ISLES22_Ensemble) that detects and segments ischemic stroke lesions on DWI across diverse scenarios on par with expert (neuro)radiologists. Second, we show the potential for biomedical challenge outputs to extend beyond the challenge's initial objectives, demonstrating their real-world clinical applicability. △ Less

Submitted 3 April, 2024; v1 submitted 28 March, 2024; originally announced March 2024.

Phase transitions of LaMnO$_3$ and SrRuO$_3$ from DFT + U based machine learning force fields simulations

Authors: Thies Jansen, Geert Brocks, Menno Bokdam

Abstract: Perovskite oxides are known to exhibit many magnetic, electronic and structural phases as function of do** and temperature. These materials are theoretically frequently investigated by the DFT+U method, typically in their ground state structure at $T=0$. We show that by combining machine learning force fields (MLFFs) and DFT+U based molecular dynamics, it becomes possible to investigate the crys… ▽ More Perovskite oxides are known to exhibit many magnetic, electronic and structural phases as function of do** and temperature. These materials are theoretically frequently investigated by the DFT+U method, typically in their ground state structure at $T=0$. We show that by combining machine learning force fields (MLFFs) and DFT+U based molecular dynamics, it becomes possible to investigate the crystal structure of complex oxides as function of temperature and $U$. Here, we apply this method to the magnetic transition metal compounds LaMnO$_3$ and SrRuO$_3$. We show that the structural phase transition from orthorhombic to cubic in LaMnO$_3$, which is accompanied by the suppression of a Jahn-Teller distortion, can be simulated with an appropriate choice of $U$. For SrRuO$_3$, we show that the sequence of orthorhombic to tetragonal to cubic crystal phase transitions can be described with great accuracy. We propose that the $U$ values that correctly capture the temperature-dependent structures of these complex oxides, can be identified by comparison of the MLFF simulated and experimentally determined structures. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Journal ref: Phys. Rev. B 108, 235122, 2023

Calculating the Circular Dichroism of Chiral Halide Perovskites: A Tight-Binding Approach

Authors: Sofia Apergi, Geert Brocks, Shuxia Tao

Abstract: Chiral metal halide perovskites have emerged as promising optoelectronic materials for emission and detection of circular polarized visible light. Despite chirality being realized by adding chiral organic cations or ligands, the chiroptical activity originates from the metal halide framework. The mechanism is not well understood, as an overarching modeling framework is lacking. Capturing chirality… ▽ More Chiral metal halide perovskites have emerged as promising optoelectronic materials for emission and detection of circular polarized visible light. Despite chirality being realized by adding chiral organic cations or ligands, the chiroptical activity originates from the metal halide framework. The mechanism is not well understood, as an overarching modeling framework is lacking. Capturing chirality requires going beyond electric dipole transitions, the common approximation in condensed matter calculations. We present a density functional theory (DFT) parameterized tight-binding (TB) model, which allows us to calculate optical properties including circular dichroism (CD) at low computational cost. Comparing Pb-based chiral perovskites with different organic cations and halide anions, we find that the structural helicity within the metal halide layers determines the size of the CD. Our results mark an important step in understanding the complex correlations of structural, electronic and optical properties of chiral perovskites, and provide a useful tool to predict new compounds with desired properties for novel optoelectronic applications. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 19 pages, 4 figures

Defects in Halide Perovskites: Does It Help to Switch from 3D to 2D?

Authors: Haibo Xue, Zehua Chen, Shuxia Tao, Geert Brocks

Abstract: Ruddlesden-Popper hybrid iodide 2D perovskites are put forward as stable alternatives to their 3D counterparts. Using first-principles calculations, we demonstrate that equilibrium concentrations of point defects in the 2D perovskites PEA$_2$PbI$_4$, BA$_2$PbI$_4$, and PEA$_2$SnI$_4$ (PEA: phenethyl ammonium, BA: butylammonium), are much lower than in comparable 3D perovskites. Bonding disruptions… ▽ More Ruddlesden-Popper hybrid iodide 2D perovskites are put forward as stable alternatives to their 3D counterparts. Using first-principles calculations, we demonstrate that equilibrium concentrations of point defects in the 2D perovskites PEA$_2$PbI$_4$, BA$_2$PbI$_4$, and PEA$_2$SnI$_4$ (PEA: phenethyl ammonium, BA: butylammonium), are much lower than in comparable 3D perovskites. Bonding disruptions by defects are more detrimental in 2D than in 3D networks, making defect formation energetically more costly. The stability of 2D Sn iodide perovskites can be further enhanced by alloying with Pb. Should, however, point defects emerge in sizable concentrations as a result of nonequilibrium growth conditions, for instance, then those defects hamper the optoelectronic performance of the 2D perovskites, as they introduce deep traps. We suggest that trap levels are responsible for the broad sub-bandgap emission in 2D perovskites observed in experiments. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Compound Defects in Halide Perovskites: A First-Principles Study of CsPbI$_3$

Authors: Haibo Xue, José Manuel Vicent-Luna, Shuxia Tao, Geert Brocks

Abstract: Lattice defects affect the long-term stability of halide perovskite solar cells. Whereas simple point defects, i.e., atomic interstitials and vacancies, have been studied in great detail, here we focus on compound defects that are more likely to form under crystal growth conditions, such as compound vacancies or interstitials, and antisites. We identify the most prominent defects in the archetype… ▽ More Lattice defects affect the long-term stability of halide perovskite solar cells. Whereas simple point defects, i.e., atomic interstitials and vacancies, have been studied in great detail, here we focus on compound defects that are more likely to form under crystal growth conditions, such as compound vacancies or interstitials, and antisites. We identify the most prominent defects in the archetype inorganic perovskite CsPbI$_3$, through first-principles density functional theory (DFT) calculations. We find that under equilibrium conditions at room temperature, the antisite of Pb substituting Cs forms in a concentration comparable to those of the most prominent point defects, whereas the other compound defects are negligible. However, under nonequilibrium thermal and operating conditions, other complexes also become as important as the point defects. Those are the Cs substituting Pb antisite, and, to a lesser extent, the compound vacancies of PbI$_2$ or CsPbI$_3$ units, and the I substituting Cs antisite. These compound defects only lead to shallow or inactive charge carrier traps, which testifies to the electronic stability of the halide perovskites. Under operating conditions with a quasi Fermi level very close to the valence band, deeper traps can develop. △ Less

Submitted 7 September, 2022; originally announced September 2022.

Light-tunable three-phase coexistence in mixed halide perovskites

Authors: Zehua Chen, Geert Brocks, Shuxia Tao, Peter A. Bobbert

Abstract: Mixed iodine-bromine perovskites used in solar cells undergo below a critical temperature an intrinsic demixing into phases with different iodine-bromine compositions. In addition, under illumination they show nucleation of an iodine-rich phase. We predict from thermodynamic considerations that in mixed iodine-bromine perovskites like MAPb(I$_{1-x}$Br$_x$)$_3$ the interplay of these effects can le… ▽ More Mixed iodine-bromine perovskites used in solar cells undergo below a critical temperature an intrinsic demixing into phases with different iodine-bromine compositions. In addition, under illumination they show nucleation of an iodine-rich phase. We predict from thermodynamic considerations that in mixed iodine-bromine perovskites like MAPb(I$_{1-x}$Br$_x$)$_3$ the interplay of these effects can lead to coexistence of a bromine-rich, iodine-rich, and nearly iodine-pure nucleated phase. This three-phase coexistence occurs in a region in the composition-temperature phase diagram near the critical point for intrinsic demixing. We investigate the hysteresis in the evolution of this coexistence when temperature or illumination intensity are cycled. Depending on the particular way the coexistence is established, nearly iodine-pure nuclei should form either in the iodine-rich phase only or both in the bromine-rich and iodine-rich phases. Experimental verification of this fundamentally novel type of light-tunable three-phase coexistence should be possible by a combination of absorption and photoluminescence experiments. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Comments: 26 pages, 5 figures

ISLES 2022: A multi-center magnetic resonance imaging stroke lesion segmentation dataset

Authors: Moritz Roman Hernandez Petzsche, Ezequiel de la Rosa, Uta Hanning, Roland Wiest, Waldo Enrique Valenzuela Pinilla, Mauricio Reyes, Maria Ines Meyer, Sook-Lei Liew, Florian Kofler, Ivan Ezhov, David Robben, Alexander Hutton, Tassilo Friedrich, Teresa Zarth, Johannes Bürkle, The Anh Baran, Bjoern Menze, Gabriel Broocks, Lukas Meyer, Claus Zimmer, Tobias Boeckh-Behrens, Maria Berndt, Benno Ikenberg, Benedikt Wiestler, Jan S. Kirschke

Abstract: Magnetic resonance imaging (MRI) is a central modality for stroke imaging. It is used upon patient admission to make treatment decisions such as selecting patients for intravenous thrombolysis or endovascular therapy. MRI is later used in the duration of hospital stay to predict outcome by visualizing infarct core size and location. Furthermore, it may be used to characterize stroke etiology, e.g.… ▽ More Magnetic resonance imaging (MRI) is a central modality for stroke imaging. It is used upon patient admission to make treatment decisions such as selecting patients for intravenous thrombolysis or endovascular therapy. MRI is later used in the duration of hospital stay to predict outcome by visualizing infarct core size and location. Furthermore, it may be used to characterize stroke etiology, e.g. differentiation between (cardio)-embolic and non-embolic stroke. Computer based automated medical image processing is increasingly finding its way into clinical routine. Previous iterations of the Ischemic Stroke Lesion Segmentation (ISLES) challenge have aided in the generation of identifying benchmark methods for acute and sub-acute ischemic stroke lesion segmentation. Here we introduce an expert-annotated, multicenter MRI dataset for segmentation of acute to subacute stroke lesions. This dataset comprises 400 multi-vendor MRI cases with high variability in stroke lesion size, quantity and location. It is split into a training dataset of n=250 and a test dataset of n=150. All training data will be made publicly available. The test dataset will be used for model validation only and will not be released to the public. This dataset serves as the foundation of the ISLES 2022 challenge with the goal of finding algorithmic methods to enable the development and benchmarking of robust and accurate segmentation algorithms for ischemic stroke. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Comments: 12 pages, 2 figures

Journal ref: Scientific data 9.1 (2022): 762

Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet

Authors: ** Kwan Johnny Wong, Wen Zhang, Fabio Bussolotti, Xinmao Yin, Tun Seng Herng, Lei Zhang, Yu Li Huang, Giovanni Vinai, Sridevi Krishnamurthi, Danil W Bukhvalov, Yu Jie Zheng, Rebekah Chua, Alpha T N Diaye, Simon A. Morton, Chao-Yao Yang, Kui-Hon Ou Yang, Piero Torelli, Wei Chen, Kuan Eng Johnson Goh, Jun Ding, Minn-Tsong Lin, Geert Brocks, Michel P de Jong, Antonio H Castro Neto, Andrew Thye Shen Wee

Abstract: Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption,… ▽ More Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets. △ Less

Submitted 6 June, 2022; originally announced June 2022.

Journal ref: Adv. Mater. 2019, 31, 1901185

The thermodynamic trends of intrinsic defects in primary halide perovskites: A first-principles study

Authors: Haibo Xue, Geert Brocks, Shuxia Tao

Abstract: Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide perovskites, MAPbI$_3$, MAPbBr$_3$, MAPbCl$_3$, FAPbI$_3$, CsPbI$_3$ and MASnI$_3$, using density functional theory calculations with the SCAN+rVV10 functional. We analyse… ▽ More Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide perovskites, MAPbI$_3$, MAPbBr$_3$, MAPbCl$_3$, FAPbI$_3$, CsPbI$_3$ and MASnI$_3$, using density functional theory calculations with the SCAN+rVV10 functional. We analyse the impact of changing anions and cations on the defect formation energies and the charge state transitions levels and identify the physical origins underlying the observed trends. Dominant defects in the lead-iodide compounds are the A$^+$ cation interstitials (A = Cs, MA, FA), charge-compensated by I$^-$ interstitials or lead $({2-})$ vacancies. In the lead-bromide and -chloride compounds, halide vacancies become relatively more prominent, and for MAPbBr$_3$, the Pb$^{2+}$ interstitial also becomes important. The trends can be explained in terms of the changes in electrostatic interactions and chemical bonding upon replacing cations and anions. Defect physics in MASnI$_3$ is strongly dominated by tin $({2-})$ vacancies, promoted by the easy oxidation of the tin perovskite. Intrinsically, all compounds are mildly p-doped, except for MASnI$_3$, which is strongly p-doped. All acceptor levels created by defects in the six perovskites are shallow. Some defects, halide vacancies and Pb or Sn interstitials in particular, create deep donor traps. Although these traps might hamper the electronic behavior of MAPbBr$_3$ and MAPbCl$_3$, in iodine-based perovskites their equilibrium concentrations are too small to affect the materials' properties. △ Less

Submitted 30 December, 2021; originally announced December 2021.

A ReaxFF molecular dynamics study of hydrogen diffusion in ruthenium -- the role of grain boundaries

Authors: Chidozie Onwudinanti, Mike Pols, Geert Brocks, Vianney Koelman, Adri C. T. van Duin, Thomas Morgan, Shuxia Tao

Abstract: Ruthenium thin films can serve as protective caps for multi-layer extreme ultraviolet mirrors exposed to atomic hydrogen. Hydrogen permeation through ruthenium is problematic as it leads to blisters on the mirrors. H has been shown to exhibit low solubility in bulk Ru, and rapidly diffuses in and out of Ru. Therefore, the underlying mechanisms of the blistering effect remains unknown. This work ma… ▽ More Ruthenium thin films can serve as protective caps for multi-layer extreme ultraviolet mirrors exposed to atomic hydrogen. Hydrogen permeation through ruthenium is problematic as it leads to blisters on the mirrors. H has been shown to exhibit low solubility in bulk Ru, and rapidly diffuses in and out of Ru. Therefore, the underlying mechanisms of the blistering effect remains unknown. This work makes use of reactive molecular dynamics simulations to study the influence of imperfections in a Ru film on the behaviour of H. For the Ru/H system, a ReaxFF force field was parametrised which reproduces structures and energies obtained from quantum-mechanical calculations. Molecular dynamics simulations have been performed with the newly-developed force field, to study the effect of tilt and twist grain boundaries on the overall diffusion behaviour of H in Ru. Our simulations show the tilt and twist grain boundaries provide energetically favourable sites for hydrogen atoms and act as sinks and highways for H. They therefore block H transport across their planes, and favour diffusion along their planes. This results in the accumulation of hydrogen at the grain boundaries. The strong effect of the grain boundaries on the hydrogen diffusion suggests tailoring the morphology of ruthenium thin films as a means to curb the rate of hydrogen permeation. △ Less

Submitted 1 October, 2021; originally announced October 2021.

First-principles calculations of defects in metal halide perovskites: a performance comparison of density functionals

Authors: Haibo Xue, Geert Brocks, Shuxia Tao

Abstract: Metal halide perovskite semiconductors have outstanding optoelectronic properties. Although these perovskites are defect-tolerant electronically, defects hamper their long-term stability and cause degradation. Density functional theory (DFT) calculations are an important tool to unravel the microscopic structures of defects, but results suffer from the different approximations used in the DFT func… ▽ More Metal halide perovskite semiconductors have outstanding optoelectronic properties. Although these perovskites are defect-tolerant electronically, defects hamper their long-term stability and cause degradation. Density functional theory (DFT) calculations are an important tool to unravel the microscopic structures of defects, but results suffer from the different approximations used in the DFT functionals. In the case of metal halide perovskites, qualitatively different results have been reported with different functionals, either predicting vacancy or interstitial point defects to be most dominant. Here, we conduct a comprehensive comparison of a wide range of functionals for calculating the equilibrium defect formation energies and concentrations of point defects in the archetype metal halide perovskite, MAPbI$_3$. We find that it is essential to include long-range Van der Waals interactions in the functional, and that it is vital to self-consistently optimize structure and volume of all compounds involved in the defect formation. For calculating equilibrium formation energies of point defects in MAPbI$_3$ and similar metal halide perovskites, we argue that the exact values of the chemical potentials of the species involved, or of the intrinsic Fermi level, are not important. In contrast to the simple Schottky or Frenkel pictures, we find that the dominant defects are MA and I interstitials, and Pb vacancies. △ Less

Submitted 31 August, 2021; v1 submitted 2 April, 2021; originally announced April 2021.

1D metallic states at 2D transition metal dichalcogenide semiconductor heterojunctions

Authors: Sridevi Krishnamurthi, Geert Brocks

Abstract: Two-dimensional (2D) lateral heterojunctions of transition metal dichalcogenides (TMDCs) have become a reality in recent years. Semiconducting TMDC layers in their common H -structure have a nonzero in-plane electric polarization, which is a topological invariant. We show by means of first-principles calculations that lateral 2D heterojunctions between TMDCs with a different polarization generate… ▽ More Two-dimensional (2D) lateral heterojunctions of transition metal dichalcogenides (TMDCs) have become a reality in recent years. Semiconducting TMDC layers in their common H -structure have a nonzero in-plane electric polarization, which is a topological invariant. We show by means of first-principles calculations that lateral 2D heterojunctions between TMDCs with a different polarization generate one-dimensional (1D) metallic states at the junction, even in cases where the different materials are joined epitaxially. The metallicity does not depend upon structural details, and is explained from the change in topological invariant at the junction. Nevertheless, these 1D metals are susceptible to 1D instabilities, such as charge- and spin-density waves, making 2D TMDC heterojunctions ideal systems for studying 1D physics. △ Less

Submitted 15 August, 2020; originally announced August 2020.

Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells

Authors: Sofia Apergi, Geert Brocks, Shuxia Tao

Abstract: Favorable optoelectronic properties and ease of fabrication make NiO a promising hole transport layer for perovskite solar cells. To achieve maximum efficiency, the electronic levels of NiO need to be optimally aligned with those of the perovskite absorber. Applying surface modifiers by adsorbing species on the NiO surface, is one of the most widespread strategies to tune its energy levels. Alkali… ▽ More Favorable optoelectronic properties and ease of fabrication make NiO a promising hole transport layer for perovskite solar cells. To achieve maximum efficiency, the electronic levels of NiO need to be optimally aligned with those of the perovskite absorber. Applying surface modifiers by adsorbing species on the NiO surface, is one of the most widespread strategies to tune its energy levels. Alkali halides are simple inorganic surface modifiers that have been extensively used in organic optoelectronics, however, rarely studied in perovskite solar cells. Using density functional theory (DFT) calculations, we investigate the effect of single layer adsorption of twenty different alkali halides on the electronic levels of NiO. Our results show that alkali halides can shift the position of the valence band maximum (VBM) of NiO to a surprisingly large extend in both directions, from -3:10 eV to +1:59 eV. We interpret the direction and magnitude of the shift in terms of the surface dipoles, formed by the adsorbed cations and anions, where the magnitude of the VBM shift is a monotonic function of the surface coverage. Our results indicate that with alkali halide surface modifiers, the electronic levels of NiO can be tuned robustly and potentially match those of many perovskite compositions in perovskite solar cells. △ Less

Submitted 13 August, 2020; originally announced August 2020.

Comments: 11 pages and 9 figures

Journal ref: Phys. Rev. Materials 4, 085403 (2020)

One-dimensional electronic instabilities at the edges of $MoS_2$

Authors: Sridevi Krishnamurthi, Mojtaba Farmanbar, Geert Brocks

Abstract: The one-dimensional metallic states that appear at the zigzag edges of semiconducting two-dimensional transition metal di-chalcogenides (TMDCs) result from the intrinsic electric polarization in these materials, which for D$_{3h}$ symmetry is a topological invariant. These 1D states are susceptible to electronic and structural perturbations that triple the period along the edge. In this paper we s… ▽ More The one-dimensional metallic states that appear at the zigzag edges of semiconducting two-dimensional transition metal di-chalcogenides (TMDCs) result from the intrinsic electric polarization in these materials, which for D$_{3h}$ symmetry is a topological invariant. These 1D states are susceptible to electronic and structural perturbations that triple the period along the edge. In this paper we study possible spin density waves (SDWs) and charge-density waves (CDWs) at the zigzag edges of {\MS}, using first-principles density functional theory calculations. Depending on the detailed structures and termination of the edges, we observe either combined SDW/CDWs or pure CDWs, along with structural distortions. In all cases the driving force is the opening of a band gap at the edge. The analysis should hold for all group VI TMDCs with the same basic structure as $MoS_2$. △ Less

Submitted 31 July, 2020; v1 submitted 30 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. B 102, 165142 (2020)

The Sign of Three: Spin/Charge Density Waves at the Boundaries of Transition Metal Dichalcogenides

Authors: Sridevi Krishnamurthi, Geert Brocks

Abstract: One-dimensional grain boundaries of two-dimensional semiconducting {\MX} (M= Mo,W; X=S,Se) transition metal di-chalcogenides are typically metallic at room temperature. The metallicity has its origin in the lattice polarization, which for these lattices with $D_{3h}$ symmetry is a topological invariant, and leads to one-dimenional boundary states inside the band gap. For boundaries perpendicular t… ▽ More One-dimensional grain boundaries of two-dimensional semiconducting {\MX} (M= Mo,W; X=S,Se) transition metal di-chalcogenides are typically metallic at room temperature. The metallicity has its origin in the lattice polarization, which for these lattices with $D_{3h}$ symmetry is a topological invariant, and leads to one-dimenional boundary states inside the band gap. For boundaries perpendicular to the polarization direction, these states are necessarily 1/3 occupied by electrons or holes, making them susceptible to a metal-insulator transition that triples the translation period. Using density-functional-theory calculations we demonstrate the emergence of combined one-dimensional spin density/charge density waves of that period at the boundary, opening up a small band gap of $\sim 0.1$ eV. This unique electronic structure allows for soliton excitations at the boundary that carry a fractional charge of $\pm 1/3\ e$. △ Less

Submitted 5 May, 2020; originally announced May 2020.

Journal ref: Phys. Rev. B 102, 161106 (2020)

Absolute energy level positions in tin and lead based halide perovskites

Authors: Shuxia Tao, Ines Schmidt, Geert Brocks, Junke Jiang, Ionut Tranca, Klaus Meerholz, Selina Olthof

Abstract: Metal-halide perovskites are promising materials for future optoelectronic applications. One intriguing property, important for many applications, is the tunability of the band gap via compositional engineering. While experimental reports on changes in absorption or photoluminescence show rather good agreement for wide variety of compounds, the physical origins of these changes, namely the variati… ▽ More Metal-halide perovskites are promising materials for future optoelectronic applications. One intriguing property, important for many applications, is the tunability of the band gap via compositional engineering. While experimental reports on changes in absorption or photoluminescence show rather good agreement for wide variety of compounds, the physical origins of these changes, namely the variations in valence band and conduction band positions, are not well characterized. Knowledge of these band positions is of importance for optimizing the energy level alignment with charge extraction layers in optoelectronic devices. Here, we determine ionization energy and electron affinity values of all primary tin and lead based perovskites using photoelectron spectroscopy data, supported by first-principles calculations. Through analysis of the chemical bonding, we characterize the key energy levels and elucidate their trends via a tight-binding analysis. We demonstrate that energy level variations in perovskites are primarily determined by the relative positions of the atomic energy levels of metal cations and halide anions. Secondary changes in the perovskite energy levels result from the cation-anion interaction strength, which depends on the volume and structural distortions of the perovskite lattices. These results mark a significant step towards understanding the electronic structure of this material class and provides the basis for rational design rules regarding the energetics in perovskite optoelectronics. △ Less

Submitted 18 February, 2019; originally announced February 2019.

Comments: 11 pages, 5 Figures. In additon Supplementary Information attached

Journal ref: Nat. Commun. 10, 2560 (2019)

Green$'$s function approach to edge states in transition metal dichalcogenides

Authors: Mojtaba Farmanbar, Taher Amlaki, Geert Brocks

Abstract: The semiconducting two-dimensional transition metal dichalcogenides MX$_{2}$ show an abundance of one-dimensional metallic edges and grain boundaries. Standard techniques for calculating edge states typically model nanoribbons, and require the use of supercells. In this paper we formulate a Green$'$s function technique for calculating edge states of (semi-)infinite two-dimensional systems with a s… ▽ More The semiconducting two-dimensional transition metal dichalcogenides MX$_{2}$ show an abundance of one-dimensional metallic edges and grain boundaries. Standard techniques for calculating edge states typically model nanoribbons, and require the use of supercells. In this paper we formulate a Green$'$s function technique for calculating edge states of (semi-)infinite two-dimensional systems with a single well-defined edge or grain boundary. We express Green$'$s functions in terms of Bloch matrices, constructed from the solutions of a quadratic eigenvalue equation. The technique can be applied to any localized basis representation of the Hamiltonian. Here we use it to calculate edge states of MX$_{2}$ monolayers by means of tight-binding models. Besides the basic zigzag and armchair edges, we study edges with a more general orientation, structurally modifed edges, and grain boundaries. A simple three-band model captures an important part of the edge electronic structures. An eleven-band model comprising all valence orbitals of the M and X atoms, is required to obtain all edge states with energies in the MX$_{2}$ band gap. Here states of odd symmetry with respect to a mirror plane through the layer of M atoms have a dangling-bond character, and tend to pin the Fermi level. △ Less

Submitted 18 March, 2016; originally announced March 2016.

Ohmic contacts to 2D semiconductors through van der Waals bonding

Authors: M. Farmanbar, G. Brocks

Abstract: High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. We show that (i) one can remove the interface states by covering the metal by a 2D layer, which is van der Waals-bonded to the MX2 layer, and (… ▽ More High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. We show that (i) one can remove the interface states by covering the metal by a 2D layer, which is van der Waals-bonded to the MX2 layer, and (ii) one can choose the buffer layer such, that it yields a p-type contact with a zero Schottky barrier height. We identify possible buffer layers such as graphene, a monolayer of h-BN, or an oxide layer with a high electron affinity, such as MoO3. The most elegant solution is a metallic M'X'2 layer with a high work function. A NbS2 monolayer adsorbed on a metal yields a high work function contact, irrespective of the metal, which gives a barrierless contact to all MX2 layers. △ Less

Submitted 9 January, 2016; originally announced January 2016.

Journal ref: Adv. Electron. Mater, 1500405 (2016)

A first-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces

Authors: M. Farmanbar, G. Brocks

Abstract: We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between MoS2 and a metal surface, and obtain reliable interface potential steps and Schottky barriers. Special care is taken to construct interface structures that have… ▽ More We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between MoS2 and a metal surface, and obtain reliable interface potential steps and Schottky barriers. Special care is taken to construct interface structures that have a mismatch between the MoS2 and the metal lattices of <1%. MoS2 is chemisorbed on the early transition metal Ti, which leads to a strong perturbation of its (electronic) structure and a pinning of the Fermi level 0.54 eV below the MoS2 conduction band due to interface states. MoS2 is physisorbed on Au, where the bonding hardly perturbs the electronic structure. The bonding of MoS2 on other metals lies between these two extreme cases, with interface interactions for the late 3d transition metals Co, Ni, Cu and the simple metal Mg that are somewhat stronger than for the late 4d/5d transition metals Pd, Ag, Pt and the simple metal Al. Even a weak interaction, such as in the case of Al, gives interface states, however, with energies inside the MoS2 band gap, which pin the Fermi level below the conduction band. △ Less

Submitted 23 October, 2015; v1 submitted 14 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. B 93, 085304 (2016)

Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer

Authors: Mojtaba Farmanbar, Geert Brocks

Abstract: Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function ($\gtrsim 4.7$ eV) metals, the Fermi level is pinned at 0.1-0.3 eV below the conduction band edge of MoS2 for low work function metals,… ▽ More Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function ($\gtrsim 4.7$ eV) metals, the Fermi level is pinned at 0.1-0.3 eV below the conduction band edge of MoS2 for low work function metals, due to the metal-MoS2 interaction. Inserting a boron nitride (BN) monolayer between the metal and the MoS2 disrupts this interaction, and restores the MoS2 electronic structure. Moreover, a BN layer decreases the metal work function of Co and Ni by $\sim 2$ eV, and enables a line-up of the Fermi level with the MoS2 conduction band. Surface modification by adsorbing a single BN layer is a practical method to attain vanishing Schottky barrier heights. △ Less

Submitted 9 January, 2015; originally announced January 2015.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 91, 161304(R), 2015

Large potential steps at weakly interacting metal-insulator interfaces

Authors: Menno Bokdam, Geert Brocks, Paul J. Kelly

Abstract: Potential steps exceeding 1 eV are regularly formed at metal|insulator interfaces, even when the interaction between the materials at the interface is weak physisorption. From first-principles calculations on metal|h-BN interfaces we show that these potential steps are only indirectly sensitive to the interface bonding through the dependence of the binding energy curves on the van der Waals intera… ▽ More Potential steps exceeding 1 eV are regularly formed at metal|insulator interfaces, even when the interaction between the materials at the interface is weak physisorption. From first-principles calculations on metal|h-BN interfaces we show that these potential steps are only indirectly sensitive to the interface bonding through the dependence of the binding energy curves on the van der Waals interaction. Exchange repulsion forms the main contribution to the interface potential step in the weakly interacting regime, which we show with a simple model based upon a symmetrized product of metal and h-BN wave functions. In the strongly interacting regime, the interface potential step is reduced by chemical bonding. △ Less

Submitted 27 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. B 90, 201411(R) (2014)

Magnetoresistance in multilayer fullerene spin valves: a first-principles study

Authors: Deniz Çakır, Diana M. Otálvaro, Geert Brocks

Abstract: Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves comprising bi- and tri-layers of the fullerene molecules C60 and C70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresist… ▽ More Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves comprising bi- and tri-layers of the fullerene molecules C60 and C70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C60 layers. Exploiting a generalized Julli`ere model we can trace the differences in spin-dependent transport between C60 and C70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage. △ Less

Submitted 27 October, 2014; originally announced October 2014.

Li intercalation in graphite: a van der Waals density-functional study

Authors: E. Hazrati, G. A. de Wijs, G. Brocks

Abstract: Modeling layered intercalation compounds from first principles poses a problem, as many of their properties are determined by a subtle balance between van der Waals interactions and chemical or Madelung terms, and a good description of van der Waals interactions is often lacking. Using van der Waals density functionals we study the structures, phonons and energetics of the archetype layered interc… ▽ More Modeling layered intercalation compounds from first principles poses a problem, as many of their properties are determined by a subtle balance between van der Waals interactions and chemical or Madelung terms, and a good description of van der Waals interactions is often lacking. Using van der Waals density functionals we study the structures, phonons and energetics of the archetype layered intercalation compound Li-graphite. Intercalation of Li in graphite leads to stable systems with calculated intercalation energies of $-0.2$ to $-0.3$~eV/Li atom, (referred to bulk graphite and Li metal). The fully loaded stage 1 and stage 2 compounds LiC$_6$ and Li$_{1/2}$C$_6$ are stable, corresponding to two-dimensional $\sqrt3\times\sqrt3$ lattices of Li atoms intercalated between two graphene planes. Stage $N>2$ structures are unstable compared to dilute stage 2 compounds with the same concentration. At elevated temperatures dilute stage 2 compounds easily become disordered, but the structure of Li$_{3/16}$C$_6$ is relatively stable, corresponding to a $\sqrt7\times\sqrt7$ in-plane packing of Li atoms. First-principles calculations, along with a Bethe-Peierls model of finite temperature effects, allow for a microscopic description of the observed voltage profiles. △ Less

Submitted 21 October, 2014; originally announced October 2014.

Comments: 12 pages, 6 figures

Journal ref: Physical Review B 90, 155448 (2014)

From spin-polarized interfaces to giant magnetoresistance in organic spin valves

Authors: Deniz Çakır, Diana M. Otálvaro, Geert Brocks

Abstract: We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a high value of 70% in the linear response regime, but it drops sharply as a function of the app… ▽ More We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a high value of 70% in the linear response regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response, and also decreases as a function of bias. Both these trends can be modelled in terms of prominent spin-dependent Fe|C70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Comments: 13 pages, 5 figures

Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study

Authors: Menno Bokdam, Geert Brocks, Mikhail I. Katsnelson, Paul J. Kelly

Abstract: The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes between 1.2 and 2.3 eV. A central role in determining the Schottky barrier height is played by a potential step of between 0.4 and 1.8 eV that is forme… ▽ More The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes between 1.2 and 2.3 eV. A central role in determining the Schottky barrier height is played by a potential step of between 0.4 and 1.8 eV that is formed at the metal|h-BN interface and effectively lowers the metal work function. If h-BN is physisorbed, as is the case on fcc Cu, Al, Au, Ag and Pt(111) substrates, the interface potential step is described well by a universal function that depends only on the distance separating h-BN from the metal surface. The interface potential step is largest when h-BN is chemisorbed, which is the case for hcp Co and Ti (0001) and for fcc Ni and Pd (111) substrates. △ Less

Submitted 14 August, 2014; v1 submitted 24 January, 2014; originally announced January 2014.

Journal ref: Phys. Rev. B 90, 085415, 2014

Band gaps in incommensurable graphene on hexagonal boron nitride

Authors: Menno Bokdam, Taher Amlaki, Geert Brocks, Paul J. Kelly

Abstract: Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is… ▽ More Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap. △ Less

Submitted 20 May, 2014; v1 submitted 23 January, 2014; originally announced January 2014.

Journal ref: Phys. Rev. B 89, 201404(R), 2014

Field effect do** of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations

Authors: Menno Bokdam, Petr A. Khomyakov, Geert Brocks, Paul J. Kelly

Abstract: We study how the Fermi energy of a graphene monolayer separated from a conducting substrate by a dielectric spacer depends on the properties of the substrate and on an applied voltage. An analytical model is developed that describes the Fermi level shift as a function of the gate voltage, of the substrate work function, and of the type and thickness of the dielectric spacer. The parameters of this… ▽ More We study how the Fermi energy of a graphene monolayer separated from a conducting substrate by a dielectric spacer depends on the properties of the substrate and on an applied voltage. An analytical model is developed that describes the Fermi level shift as a function of the gate voltage, of the substrate work function, and of the type and thickness of the dielectric spacer. The parameters of this model, that should describe the effect of gate electrodes in field-effect devices, can be obtained from density functional theory (DFT) calculations on single layers or interfaces. The do** of graphene in metal|dielectric|graphene structures is found to be determined not only by the difference in work function between the metal and graphene and the dielectric properties of the spacer but potential steps that result from details of the microscopic bonding at the interfaces also play an important role. The do** levels predicted by the model agree very well with the results obtained from first-principles DFT calculations on metal|dielectric|graphene structures with the metals Al, Co, Ni, Cu, Pd, Ag, Pt or Au, and a h-BN or vacuum dielectric spacer. △ Less

Submitted 20 February, 2013; originally announced February 2013.

Journal ref: Phys. Rev. B 87, 075414 (2013)

Electrostatic do** of graphene through ultrathin hexagonal boron nitride films

Authors: Menno Bokdam, Petr A. Khomyakov, Geert Brocks, Zhicheng Zhong, Paul J. Kelly

Abstract: When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene do** depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. W… ▽ More When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene do** depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the do** very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic do** of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene. △ Less

Submitted 10 November, 2011; originally announced November 2011.

Comments: 5 pages, 4 figures

Journal ref: Nano Lett., 2011, 11 (11), pp 4631-4635

The Formation of Self-Assembled Nanowire Arrays on Ge(001): a DFT Study of Pt Induced Nanowire Arrays

Authors: Danny E. P. Vanpoucke, Geert Brocks

Abstract: Nanowire (NW) arrays form spontaneously after high temperature annealing of a submonolayer deposition of Pt on a Ge(001) surface. These NWs are a single atom wide, with a length limited only by the underlying beta-terrace to which they are uniquely connected. Using ab-initio density functional theory (DFT) calculations we study possible geometries of the NWs and substrate. Direct comparison to exp… ▽ More Nanowire (NW) arrays form spontaneously after high temperature annealing of a submonolayer deposition of Pt on a Ge(001) surface. These NWs are a single atom wide, with a length limited only by the underlying beta-terrace to which they are uniquely connected. Using ab-initio density functional theory (DFT) calculations we study possible geometries of the NWs and substrate. Direct comparison to experiment is made via calculated scanning tunneling microscope (STM) images. Based on these images, geometries for the beta-terrace and the NWs are identified, and a formation path for the nanowires as function of increasing local Pt density is presented. We show the beta-terrace to be a dimer row surface reconstruction with a checkerboard pattern of Ge-Ge and Pt-Ge dimers. Most remarkably, comparison of calculated to experimental STM images shows the NWs to consist of germanium atoms embedded in the Pt-lined troughs of the underlying surface, contrary to what was assumed previously in experiments. △ Less

Submitted 1 February, 2011; originally announced February 2011.

Comments: 6 pages, 4 figures, E-proceedings of 2009 MRS spring Meeting

Journal ref: Mater. Res. Soc. Symp. Proc. 1177-Z03-09 (2009)

Nonlinear screening of charges induced in graphene by metal contacts

Authors: P. A. Khomyakov, A. A. Starikov, G. Brocks, P. J. Kelly

Abstract: To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a consequence of the ultra-relativistic nature of the electron spectrum near the Fermi energy. The induced potential decays with the distance from the metal contact a… ▽ More To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a consequence of the ultra-relativistic nature of the electron spectrum near the Fermi energy. The induced potential decays with the distance from the metal contact as x^{-1/2} and x^{-1} for undoped and doped graphene, respectively, breaking its spatial homogeneity. In the contact region the metal contact can give rise to the formation of a p-p', n-n', p-n junction (or with additional gating or impurity do**, even a p-n-p' junction) that contributes to the overall resistance of the graphene sample, destroying its electron-hole symmetry. Using the work functions of metal-covered graphene recently calculated by Khomyakov et al. [Phys. Rev. B 79, 195425 (2009)] we predict the boundary potential and junction type for different metal contacts. △ Less

Submitted 17 August, 2010; v1 submitted 10 November, 2009; originally announced November 2009.

Comments: 6 pages, 3 figures; v3: revision of the text, supplementary material is added. Accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 82, 115437 (2010)

First principles modelling of magnesium titanium hydrides

Authors: Süleyman Er, Michiel J. van Setten, Gilles A. de Wijs, Geert Brocks

Abstract: Mixing Mg with Ti leads to a hydride Mg(x)Ti(1-x)H2 with markedly improved (de)hydrogenation properties for x < 0.8, as compared to MgH2. Optically, thin films of Mg(x)Ti(1-x)H2 have a black appearance, which is remarkable for a hydride material. In this paper we study the structure and stability of Mg(x)Ti(1-x)H2, x= 0-1 by first-principles calculations at the level of density functional theory… ▽ More Mixing Mg with Ti leads to a hydride Mg(x)Ti(1-x)H2 with markedly improved (de)hydrogenation properties for x < 0.8, as compared to MgH2. Optically, thin films of Mg(x)Ti(1-x)H2 have a black appearance, which is remarkable for a hydride material. In this paper we study the structure and stability of Mg(x)Ti(1-x)H2, x= 0-1 by first-principles calculations at the level of density functional theory. We give evidence for a fluorite to rutile phase transition at a critical composition x(c)= 0.8-0.9, which correlates with the experimentally observed sharp decrease in (de)hydrogenation rates at this composition. The densities of states of Mg(x)Ti(1-x)H2 have a peak at the Fermi level, composed of Ti d states. Disorder in the positions of the Ti atoms easily destroys the metallic plasma, however, which suppresses the optical reflection. Interband transitions result in a featureless optical absorption over a large energy range, causing the black appearance of Mg(x)Ti(1-x)H2. △ Less

Submitted 6 October, 2009; originally announced October 2009.

Comments: 22 pages, 9 figures, 4 tables

Journal ref: J. Phys.: Condens. Matter 22, 074208 (2010)

DFT Study of Planar Boron Sheets: A New Template for Hydrogen Storage

Authors: Süleyman Er, Gilles A. de Wijs, Geert Brocks

Abstract: We study the hydrogen storage properties of planar boron sheets and compare them to those of graphene. The binding of molecular hydrogen to the boron sheet (0.05 eV) is stronger than that to graphene. We find that dispersion of alkali metal (AM = Li, Na, and K) atoms onto the boron sheet markedly increases hydrogen binding energies and storage capacities. The unique structure of the boron sheet… ▽ More We study the hydrogen storage properties of planar boron sheets and compare them to those of graphene. The binding of molecular hydrogen to the boron sheet (0.05 eV) is stronger than that to graphene. We find that dispersion of alkali metal (AM = Li, Na, and K) atoms onto the boron sheet markedly increases hydrogen binding energies and storage capacities. The unique structure of the boron sheet presents a template for creating a stable lattice of strongly bonded metal atoms with a large nearest neighbor distance. In contrast, AM atoms dispersed on graphene tend to cluster to form a bulk metal. In particular the boron-Li system is found to be a good candidate for hydrogen storage purposes. In the fully loaded case this compound can contain up to 10.7 wt. % molecular hydrogen with an average binding energy of 0.15 eV/H2. △ Less

Submitted 6 October, 2009; originally announced October 2009.

Comments: 19 pages, 7 figures, and 3 tables

Journal ref: J. Phys. Chem. C 113, 18962-18967 (2009)

CO adsorption on Pt induced Ge nanowires

Authors: Danny E. P. Vanpoucke, Geert Brocks

Abstract: Using density functional theory, we investigate the possible adsorption sites of CO molecules on the recently discovered Pt induced Ge nanowires on Ge(001). Calculated STM images are compared to experimental STM images to identify the experimentally observed adsorption sites. The CO molecules are found to adsorb preferably onto the Pt atoms between the Ge nanowire dimer segments. This adsorption s… ▽ More Using density functional theory, we investigate the possible adsorption sites of CO molecules on the recently discovered Pt induced Ge nanowires on Ge(001). Calculated STM images are compared to experimental STM images to identify the experimentally observed adsorption sites. The CO molecules are found to adsorb preferably onto the Pt atoms between the Ge nanowire dimer segments. This adsorption site places the CO in between two nanowire dimers, pushing them outward, blocking the nearest equivalent adsorption sites. This explains the observed long-range repulsive interaction between CO molecules on these Pt induced nanowires. △ Less

Submitted 1 February, 2011; v1 submitted 3 September, 2009; originally announced September 2009.

Comments: 12 pages, 10 figures

Journal ref: Phys. Rev. B 81, 235434 (2010)

First-principles study of the dipole layer formation at metal-organic interfaces

Authors: Paul C. Rusu, Gianluca Giovannetti, Christ Weijtens, Reinder Coehoorn, Geert Brocks

Abstract: We study the dipole layer formed at metal-organic interfaces by means of first-principles calculations. Interface dipoles are monitored by calculating the work function change of Au, Ag, Al, Mg and Ca surfaces upon adsorption of a monolayer of PTCDA (3,4,9,10-perylene-tetra-carboxylic-di-anhydride), perylene or benzene molecules. Adsorption of PTCDA leads to pinning of the work function for a ra… ▽ More We study the dipole layer formed at metal-organic interfaces by means of first-principles calculations. Interface dipoles are monitored by calculating the work function change of Au, Ag, Al, Mg and Ca surfaces upon adsorption of a monolayer of PTCDA (3,4,9,10-perylene-tetra-carboxylic-di-anhydride), perylene or benzene molecules. Adsorption of PTCDA leads to pinning of the work function for a range of metal substrates. It gives interface dipoles that compensate for the difference in the clean metal work functions, leading to a nearly constant work function. In contrast, adsorption of benzene always results in a decrease of the work function, which is relatively constant for all metal substrates. Both effects are found in perylene, where adsorption on low work function metals gives work function pinning, whereas adsorption on high work function metals gives work function lowering. The work function changes upon adsorption are analyzed and interpreted in terms of two competing effects. If the molecule and substrate interact weakly, the molecule pushes electrons into the surface, which lowers the work function. If the metal work function is sufficiently low with respect to the unoccupied states of the molecule, electrons are donated into these states, which increases the binding and the work function. △ Less

Submitted 31 August, 2009; originally announced August 2009.

Comments: 18 pages, 12 figures, 5 tables

Journal ref: Phys. Rev. B 81, 125403 (2010)

Hydrogen Storage by Polylithiated Molecules and Nanostructures

Authors: Süleyman Er, Gilles A. de Wijs, Geert Brocks

Abstract: We study polylithiated molecules as building blocks for hydrogen storage materials, using first-principles calculations. $\clifour$ and $\olitwo$ bind 12 and 10 hydrogen molecules, respectively, with an average binding energy of 0.10 and 0.13 eV, leading to gravimetric densities of 37.8 and 40.3 weight % H. Bonding between Li and C or O is strongly polar and $\hyd$ molecules attach to the partia… ▽ More We study polylithiated molecules as building blocks for hydrogen storage materials, using first-principles calculations. $\clifour$ and $\olitwo$ bind 12 and 10 hydrogen molecules, respectively, with an average binding energy of 0.10 and 0.13 eV, leading to gravimetric densities of 37.8 and 40.3 weight % H. Bonding between Li and C or O is strongly polar and $\hyd$ molecules attach to the partially charged Li atoms without dissociating, which is favorable for (de)hydrogenation kinetics. CLi$_n$ and OLi$_m$ molecules can be chemically bonded to graphene sheets to hinder the aggregation of such molecules. In particular B or Be doped graphene strongly bind the molecules without seriously affecting the hydrogen binding energy. It still leads to a hydrogen storage capacity in the range 5-8.5 wt % H. △ Less

Submitted 13 February, 2009; originally announced February 2009.

Comments: 15 pages, 3 tables, and 5 figures

Journal ref: J. Phys. Chem. C 113, 8997-9002 (2009)

First-principles study of the interaction and charge transfer between graphene and metals

Authors: P. A. Khomyakov, G. Giovannetti, P. C. Rusu, G. Brocks, J. van den Brink, P. J. Kelly

Abstract: Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density functional theory. The bonding of graphene to Al, Ag, Cu, Au and Pt(111) surfaces is so weak that its unique "ultrarelativistic" electronic structure is preserved… ▽ More Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density functional theory. The bonding of graphene to Al, Ag, Cu, Au and Pt(111) surfaces is so weak that its unique "ultrarelativistic" electronic structure is preserved. The interaction does, however, lead to a charge transfer that shifts the Fermi level by up to 0.5 eV with respect to the conical points. The crossover from p-type to n-type do** occurs for a metal with a work function ~5.4 eV, a value much larger than the work function of free-standing graphene, 4.5 eV. We develop a simple analytical model that describes the Fermi level shift in graphene in terms of the metal substrate work function. Graphene interacts with and binds more strongly to Co, Ni, Pd and Ti. This chemisorption involves hybridization between graphene $p_z$-states and metal d-states that opens a band gap in graphene. The graphene work function is as a result reduced considerably. In a current-in-plane device geometry this should lead to n-type do** of graphene. △ Less

Submitted 8 February, 2009; originally announced February 2009.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. B 79, 195425 (2009)

Pt-induced nanowires on Ge(001): a DFT study

Authors: Danny E. P. Vanpoucke, Geert Brocks

Abstract: We study formation of the nanowires formed after deposition of Pt on a Ge(001) surface. The nanowires form spontaneously after high temperature annealing. They are thermodynamically stable, only one atom wide and up to a few hundred atoms long. Ab initio density functional theory calculations are performed to identify possible structures of the Pt-Ge (001) surface with nanowires on top. A large nu… ▽ More We study formation of the nanowires formed after deposition of Pt on a Ge(001) surface. The nanowires form spontaneously after high temperature annealing. They are thermodynamically stable, only one atom wide and up to a few hundred atoms long. Ab initio density functional theory calculations are performed to identify possible structures of the Pt-Ge (001) surface with nanowires on top. A large number of structures is studied. With nanowires that are formed out of Pt or Ge dimers or mixed Pt-Ge dimers. By comparing simulated scanning tunneling microscopy images with experimental ones we model the formation of the nanowires and identify the geometries of the different phases in the formation process. We find that the formation of nanowires on a Pt-Ge(001) surface is a complex process based on increasing the Pt density in the top layers of the Ge(001) surface. Most remarkably we find the nanowires to consist of germanium dimers placed in troughs lined by mixed Pt-Ge dimer rows. △ Less

Submitted 1 February, 2011; v1 submitted 19 January, 2009; originally announced January 2009.

Comments: 22 pages, 24 figures

Journal ref: Phys. Rev. B 81, 085410 (2010)

DFT study of Pt-induced Ge(001) reconstructions

Authors: Danny E. P. Vanpoucke, Geert Brocks

Abstract: Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodynamically stable and can be hundreds of atoms long. The nanowires only occur on a reconstructed Pt-Ge-surface where they fill the troughs between the dimer rows on the surface. This unique connection between the nanowires and the underlying substrate make a thorough understanding of the latter necess… ▽ More Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodynamically stable and can be hundreds of atoms long. The nanowires only occur on a reconstructed Pt-Ge-surface where they fill the troughs between the dimer rows on the surface. This unique connection between the nanowires and the underlying substrate make a thorough understanding of the latter necessary for understanding the growth of the nanowires. In this paper we study possible surface reconstructions containing 0.25 and 0.5 of a monolayer of Pt. Comparison of calculated STM images to experimental STM images of the surface reconstruction reveal that the Pt atoms are located in the top layer, creating a structure with rows of alternating Pt-Ge and Ge-Ge dimers in a c(4x2) arrangement. Our results also show that Pt atoms in the second or third layer can not be responsible for the experimentally observed STM images. △ Less

Submitted 1 February, 2011; v1 submitted 19 January, 2009; originally announced January 2009.

Comments: 16 pages, 13 figures

Journal ref: Phys. Rev. B 81, 035333 (2010)

Tunable Hydrogen Storage in Magnesium - Transition Metal Compounds

Authors: Suleyman Er, Dhirendra Tiwari, Gilles A. de Wijs, Geert Brocks

Abstract: Magnesium dihydride ($\mgh$) stores 7.7 weight % hydrogen, but it suffers from a high thermodynamic stability and slow (de)hydrogenation kinetics. Alloying Mg with lightweight transition metals (TM = Sc, Ti, V, Cr) aims at improving the thermodynamic and kinetic properties. We study the structure and stability of Mg$_x$TM$_{1-x}$H$_2$ compounds, $x=[0$-1], by first-principles calculations at the… ▽ More Magnesium dihydride ($\mgh$) stores 7.7 weight % hydrogen, but it suffers from a high thermodynamic stability and slow (de)hydrogenation kinetics. Alloying Mg with lightweight transition metals (TM = Sc, Ti, V, Cr) aims at improving the thermodynamic and kinetic properties. We study the structure and stability of Mg$_x$TM$_{1-x}$H$_2$ compounds, $x=[0$-1], by first-principles calculations at the level of density functional theory. We find that the experimentally observed sharp decrease in hydrogenation rates for $x\gtrsim0.8$ correlates with a phase transition of Mg$_x$TM$_{1-x}$H$_2$ from a fluorite to a rutile phase. The stability of these compounds decreases along the series Sc, Ti, V, Cr. Varying the transition metal (TM) and the composition $x$, the formation enthalpy of Mg$_x$TM$_{1-x}$H$_2$ can be tuned over the substantial range 0-2 eV/f.u. Assuming however that the alloy Mg$_x$TM$_{1-x}$ does not decompose upon dehydrogenation, the enthalpy associated with reversible hydrogenation of compounds with a high magnesium content ($x=0.75$) is close to that of pure Mg. △ Less

Submitted 13 October, 2008; originally announced October 2008.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 79, 024105 (2009)

Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene

Authors: V. M. Karpan, P. A. Khomyakov, A. A. Starikov, G. Giovannetti, M. Zwierzycki, M. Talanana, G. Brocks, J. van den Brink, P. J. Kelly

Abstract: The in-plane lattice constants of close-packed planes of fcc and hcp Ni and Co match that of graphite almost perfectly so that they share a common two dimensional reciprocal space. Their electronic structures are such that they overlap in this reciprocal space for one spin direction only allowing us to predict perfect spin filtering for interfaces between graphite and (111) fcc or (0001) hcp Ni… ▽ More The in-plane lattice constants of close-packed planes of fcc and hcp Ni and Co match that of graphite almost perfectly so that they share a common two dimensional reciprocal space. Their electronic structures are such that they overlap in this reciprocal space for one spin direction only allowing us to predict perfect spin filtering for interfaces between graphite and (111) fcc or (0001) hcp Ni or Co. First-principles calculations of the scattering matrix show that the spin filtering is quite insensitive to amounts of interface roughness and disorder which drastically influence the spin-filtering properties of conventional magnetic tunnel junctions or interfaces between transition metals and semiconductors. When a single graphene sheet is adsorbed on these open $d$-shell transition metal surfaces, its characteristic electronic structure, with topological singularities at the K points in the two dimensional Brillouin zone, is destroyed by the chemical bonding. Because graphene bonds only weakly to Cu which has no states at the Fermi energy at the K point for either spin, the electronic structure of graphene can be restored by dusting Ni or Co with one or a few monolayers of Cu while still preserving the ideal spin injection property. △ Less

Submitted 8 December, 2008; v1 submitted 30 September, 2008; originally announced September 2008.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 78, 195419 (2008)

Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a DFT study

Authors: Danny E. P. Vanpoucke, Geert Brocks

Abstract: Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning tunneling microscopy images are compared to the calculated local densities of states. On the ba… ▽ More Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning tunneling microscopy images are compared to the calculated local densities of states. On the basis of this comparison and the stability of the structures, we conclude that the formation of nanowires is driven by an increased concentration of Pt atoms in the Ge surface layers. Surprisingly, the atomic nanowires consist of Ge instead of Pt atoms. △ Less

Submitted 2 June, 2008; v1 submitted 11 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures

Journal ref: PRB 77, 241308 (R) (2008)

First-principles study of the optical properties of MgxTi(1-x)H2

Authors: M. J. van Setten, S. Er, G. Brocks, R. A. de Groot, G. A. de Wijs

Abstract: The optical and electronic properties of Mg-Ti hydrides are studied using first-principles density functional theory. Dielectric functions are calculated for MgxTi(1-x)H2 with compositions x = 0.5, 0.75, and 0.875. The structure is that of fluorite TiH2 where both Mg and Ti atoms reside at the Ti positions of the lattice. In order to assess the effect of randomness in the Mg and Ti occupations w… ▽ More The optical and electronic properties of Mg-Ti hydrides are studied using first-principles density functional theory. Dielectric functions are calculated for MgxTi(1-x)H2 with compositions x = 0.5, 0.75, and 0.875. The structure is that of fluorite TiH2 where both Mg and Ti atoms reside at the Ti positions of the lattice. In order to assess the effect of randomness in the Mg and Ti occupations we consider both highly ordered structures, modeled with simple unit cells of minimal size, and models of random alloys. These are simulated by super cells containing up to 64 formula units (Z = 64). All compositions and structural models turn out metallic, hence the dielectric functions contain interband and intraband free electron contributions. The former are calculated in the independent particle random phase approximation. The latter are modeled based upon the intraband plasma frequencies, which are also calculated from first-principles. Only for the models of the random alloys we obtain a black state, i.e. low reflection and transmission in the energy range from 1 to 6 eV. △ Less

Submitted 2 April, 2008; originally announced April 2008.

Comments: 7 pages, 8 figures

Journal ref: Physical Review B 79, 125117 (2009)

Evidence for the formation of a Mott state in potassium-intercalated pentacene

Authors: M. F. Craciun, G. Giovannetti, S. Rogge, G. Brocks, A. F. Morpurgo, J. van den Brink

Abstract: We investigate electronic transport through pentacene thin-films intercalated with potassium. From temperature-dependent conductivity measurements we find that potassium-intercalated pentacene shows metallic behavior in a broad range of potassium concentrations. Surprisingly, the conductivity exhibits a re-entrance into an insulating state when the potassium concentration is increased past one a… ▽ More We investigate electronic transport through pentacene thin-films intercalated with potassium. From temperature-dependent conductivity measurements we find that potassium-intercalated pentacene shows metallic behavior in a broad range of potassium concentrations. Surprisingly, the conductivity exhibits a re-entrance into an insulating state when the potassium concentration is increased past one atom per molecule. We analyze our observations theoretically by means of electronic structure calculations, and we conclude that the phenomenon originates from a Mott metal-insulator transition, driven by electron-electron interactions. △ Less

Submitted 5 November, 2008; v1 submitted 20 February, 2008; originally announced February 2008.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B. 79, 125116 (2009)

Do** graphene with metal contacts

Authors: G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, P. J. Kelly

Abstract: Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by $\sim 0.5$ eV. At equilibrium separations, the cr… ▽ More Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by $\sim 0.5$ eV. At equilibrium separations, the crossover from $p$-type to $n$-type do** occurs for a metal work function of $\sim 5.4$ eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability. △ Less

Submitted 23 July, 2008; v1 submitted 15 February, 2008; originally announced February 2008.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 101, 026803 (2008)

A first-principles study of the electronic structure and stability of Be(BH4)2

Authors: M. J. van Setten, G. A. de Wijs, G. Brocks

Abstract: Alanates and boranates are studied intensively because of their potential use as hydrogen storage materials. In this paper we present a first-principles study of the electronic structure and the energetics of beryllium boranate, Be(BH4)2. From total energy calculations we show that - in contrast to the other boranates and alanates - hydrogen desorption directly to the elements is likely, and is… ▽ More Alanates and boranates are studied intensively because of their potential use as hydrogen storage materials. In this paper we present a first-principles study of the electronic structure and the energetics of beryllium boranate, Be(BH4)2. From total energy calculations we show that - in contrast to the other boranates and alanates - hydrogen desorption directly to the elements is likely, and is at least competitive with desorption to the elemental hydride (BeH2). The formation enthalpy of Be(BH4)2 is only -0.12 eV/H2 (at T=0K). This low value can be rationalized by the participation of all atoms in the covalent bonding, in contrast to the ionic bonding observed in other boranates. From calculations of thermodynamic properties at finite temperature we estimate a decomposition temperature of 162 K at a pressure of 1 bar. △ Less

Submitted 6 December, 2007; originally announced December 2007.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 77, 165115 (2008)

Graphite and graphene as perfect spin filters

Authors: V. M. Karpan, G. Giovannetti, P. A. Khomyakov, M. Talanana, A. A. Starikov, M. Zwierzycki, J. van den Brink, G. Brocks, P. J. Kelly

Abstract: Based upon the observations (i) that their in-plane lattice constants match almost perfectly and (ii) that their electronic structures overlap in reciprocal space for one spin direction only, we predict perfect spin filtering for interfaces between graphite and (111) fcc or (0001) hcp Ni or Co. The spin filtering is quite insensitive to roughness and disorder. The formation of a chemical bond be… ▽ More Based upon the observations (i) that their in-plane lattice constants match almost perfectly and (ii) that their electronic structures overlap in reciprocal space for one spin direction only, we predict perfect spin filtering for interfaces between graphite and (111) fcc or (0001) hcp Ni or Co. The spin filtering is quite insensitive to roughness and disorder. The formation of a chemical bond between graphite and the open $d$-shell transition metals that might complicate or even prevent spin injection into a single graphene sheet can be simply prevented by dusting Ni or Co with one or a few monolayers of Cu while still preserving the ideal spin injection property. △ Less

Submitted 13 August, 2007; originally announced August 2007.

Journal ref: Phys Rev Lett 99, 176602 (2007)

Dipole Formation at Interfaces of Alkanethiolate Self-assembled Monolayers and Ag(111)

Authors: Paul C. Rusu, Gianluca Giovannetti, Geert Brocks

Abstract: The formation of interface dipoles in self-assembled monolayers (SAMs) of --CH$_3$ and --CF$_3$ terminated short-chain alkanethiolates on Ag(111) is studied by means of density functional theory calculations. The interface dipoles are characterized by monitoring the change in the surface work function upon adsorption of the SAM. We compare results obtained for SAMs in structures with a different… ▽ More The formation of interface dipoles in self-assembled monolayers (SAMs) of --CH$_3$ and --CF$_3$ terminated short-chain alkanethiolates on Ag(111) is studied by means of density functional theory calculations. The interface dipoles are characterized by monitoring the change in the surface work function upon adsorption of the SAM. We compare results obtained for SAMs in structures with a different packing density of molecules, i.e. {$(\sqrt{7}\times\sqrt{7}) R19.1^{\circ}$}, {$(\sqrt{3}\times\sqrt{3}) R30^{\circ}$}, and {p(2$\times$2)}. The work function of alkanethiolate SAMs on silver depends weakly on the packing density; that of fluorinatedalkanethiolates shows a stronger dependance. The results are analyzed in terms of two nearly independent contributions to the interface dipole. These originate respectively from the molecular dipoles and from a charge transfer between the metal surface and the molecules. The charge transfer is determined by the silver--sulfur bond and it is independent of the electronegativity of the molecules. △ Less

Submitted 4 May, 2007; originally announced May 2007.

Comments: 11 pages, 4 figures, 6 tables

Journal ref: J. Phys. Chem. C 111, 14448-14456 (2007)

Substrate-induced bandgap in graphene on hexagonal boron nitride

Authors: Gianluca Giovannetti, Petr A. Khomyakov, Geert Brocks, Paul J. Kelly, Jeroen van den Brink

Abstract: We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53 meV at the Dirac points… ▽ More We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53 meV at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene sheet on the BN substrate generate similar band gaps and masses. The band gap induced by the BN surface can greatly improve room temperature pinch-off characteristics of graphene-based field effect transistors. △ Less

Submitted 30 July, 2007; v1 submitted 16 April, 2007; originally announced April 2007.

Comments: 5 pages, 4 figures, Phys. Rev. B, in press

Journal ref: Phys. Rev B. 76, 073103 (2007)

Ab initio study on the effects of transition metal do** of Mg2NiH4

Authors: M. J. van Setten, G. A. de Wijs, G. Brocks

Abstract: Mg2NiH4 is a promising hydrogen storage material with fast (de)hydrogenation kinetics. Its hydrogen desorption enthalpy, however, is too large for practical applications. In this paper we study the effects of transition metal do** by first-principles density functional theory calculations. We show that the hydrogen desorption enthalpy can be reduced by ~0.1 eV/H2 if one in eight Ni atoms is re… ▽ More Mg2NiH4 is a promising hydrogen storage material with fast (de)hydrogenation kinetics. Its hydrogen desorption enthalpy, however, is too large for practical applications. In this paper we study the effects of transition metal do** by first-principles density functional theory calculations. We show that the hydrogen desorption enthalpy can be reduced by ~0.1 eV/H2 if one in eight Ni atoms is replaced by Cu or Fe. Replacing Ni by Co atoms, however, increases the hydrogen desorption enthalpy. We study the thermodynamic stability of the dopants in the hydrogenated and dehydrogenated phases. Do** with Co or Cu leads to marginally stable compounds, whereas do** with Fe leads to an unstable compound. The optical response of Mg2NiH4 is also substantially affected by do**. The optical gap in Mg2NiH4 is ~1.7 eV. Do** with Co, Fe or Cu leads to impurity bands that reduce the optical gap by up to 0.5 eV. △ Less

Submitted 21 March, 2007; originally announced March 2007.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. B 76, 075125 (2007)