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Vibrational and mechanical properties of the highly mismatched (Cd,Be)Te semiconductor alloy : Experiment and ab initio calculations
Authors:
A. Elmahjoubi,
M. B. Shoker,
O. Pages,
V. J. B. Torres,
A. Polian,
A. V. Postnikov,
C. Bellin,
K. Beneut,
C. Gardiennet,
G. Kervern,
A. EnNaciri,
L. Broch,
R. Hajj Hussein,
J. -P. Itie,
L. Nataf,
S. Ravy,
P. Franchetti,
S. Diliberto,
S. Michel,
A. Abouais,
K. Strzalkowski
Abstract:
The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combini…
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The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combining Raman scattering with X ray diffraction at high pressure and ab initio calculations (x around 0, 0.5 and 1). The (macroscopic) bulk modulus B drops below the CdTe value on minor Be incorporation, at variance with a linear B versus x increase predicted ab initio, thus hinting at large anharmonic effects in the real crystal. Yet, no anomaly occurs at the microscopic (bond) scale as the regular bimodal PM Raman signal predicted ab initio for the BeTe bond in minority (x around 0 and 0.5) is (barely) detected experimentally. Although at large Be content (x around 1) the same bimodal signal relaxes down to inversion, an unprecedented case, specific pressure dependencies of the regular (x around 0 and 0.5) and inverted (x around 1) BeTe Raman doublets are in line with PM predictions. Hence, the PM applies as such to (Cd, Be)Te albeit in a relaxed form, without further refinement. This enhances the scheme validity as a generic descriptor of phonons in alloys.
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Submitted 3 March, 2023;
originally announced March 2023.
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Near-forward Raman selection rules of the phonon-polariton created by alloying in (Zn,Be)Se
Authors:
H. Dicko,
O. Pages,
F. Firszt,
K. Strzalkowski,
W. Paszkowicz,
A. Maillard,
C. Jobard,
L. Broch
Abstract:
The Raman selection rules of the (ZnSe, BeSe) mixed phonon polariton created by alloying in the three mode (1ZnSe, 2BeSe) ZnBeSe system, whose dramatic S like dispersion covers the large frequency gap between the ZnSe and BeSe spectral ranges, is studied in its wave vector dependence by near forward scattering. Both the collapse regime away from the Brillouin zone centre and the reinforcement regi…
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The Raman selection rules of the (ZnSe, BeSe) mixed phonon polariton created by alloying in the three mode (1ZnSe, 2BeSe) ZnBeSe system, whose dramatic S like dispersion covers the large frequency gap between the ZnSe and BeSe spectral ranges, is studied in its wave vector dependence by near forward scattering. Both the collapse regime away from the Brillouin zone centre and the reinforcement regime near the Brillouin zone centre are addressed, using appropriate laser lines and Be contents. We find that in both regimes the considered phonon polariton, in fact a transverse mode with mixed mechanical and electrical character, obeys the same nominal Raman selection rules as its purely mechanical variant commonly observed in the backscattering geometry. Besides, marked differences in the phonon polariton Raman lineshapes in the two regimes give a hint about how the phonon polariton electrical field E develops while descending the S like dispersion towards the Brillouin zone centre. In the reinforcement regime E is large, leading to intramode on top of intermode transfers of oscillator strength mediated by E between the two BeSe modes, that both exhibit a fine structure on account of the alloy disorder. In contrast, in the collapse regime E remains weak, as testified by the absence of intramode transfer. The discussion is supported by contour modeling of the multi phonon polariton Raman lineshapes in their wave vector dependence within the linear dielectric approach.
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Submitted 3 March, 2016; v1 submitted 2 March, 2016;
originally announced March 2016.
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Pressure-induced phonon freezing in the ZnSeS II-VI mixed crystal: phonon-polaritons and ab initio calculations
Authors:
R. Hajj Hussein,
O. Pages,
A. Polian,
A. V. Postnikov,
H. Dicko,
F. Firszt,
K. Strzalkowski,
W. Paszkowicz,
L. Broch,
S. Ravy,
P. Fertey
Abstract:
Near-forward Raman scattering combined with ab initio phonon and bond length calculations is used to study the phonon-polariton transverse optical modes (with mixed electrical and mechanical character) of the II-VI ZnSeS mixed crystal under pressure. The goal of the study is to determine the pressure dependence of the poorly resolved percolation-type Zn-S Raman doublet of the three oscillator [1(Z…
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Near-forward Raman scattering combined with ab initio phonon and bond length calculations is used to study the phonon-polariton transverse optical modes (with mixed electrical and mechanical character) of the II-VI ZnSeS mixed crystal under pressure. The goal of the study is to determine the pressure dependence of the poorly resolved percolation-type Zn-S Raman doublet of the three oscillator [1(Zn-Se),2(Zn-S)] ZnSe68S32 mixed crystal, which exhibits a phase transition at approximately the same pressure as its two end compounds (~14 GPa, zincblende-to-rocksalt), as determined by high-pressure x-ray diffraction. We find that the intensity of the lower Zn-S sub-mode of ZnSe68S32, due to Zn-S bonds vibrating in their own (S-like) environment, decreases under pressure (Raman scattering), whereas its frequency progressively converges onto that of the upper Zn- S sub-mode, due to Zn-S vibrations in the foreign (Se-like) environment (ab initio calculations). Ultimately, only the latter sub-mode survives. A similar phonon freezing was earlier evidenced with the well-resolved percolation-type Be-Se doublet of ZnBeSe [Pradhan et al. Phys. Rev. B 81, 115207 (2010)], that exhibits a large contrast in the pressure-induced structural transitions of its end compounds. We deduce that the above collapse and convergence process is intrinsic to the percolation doublet of a short bond under pressure, at least in a ZnSe-based mixed crystal, and not due to any pressure-induced structural transition.
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Submitted 3 March, 2016; v1 submitted 2 March, 2016;
originally announced March 2016.
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Near-forward Raman study of a phonon-polariton reinforcement regime in the Zn(Se,S) alloy
Authors:
Rami Hajj Hussein,
Olivier Pagès,
Franciszek Firszt,
Agnieszka Marasek,
Wojtek Paszkowicz,
Alain Maillard,
Laurent Broch
Abstract:
We investigate by near-forward Raman scattering a presumed reinforcement of the (A-C,B-C)-mixed phonon-polariton of a A1-xBxC zincblende alloy when entering its longitudinal optical (LO-)regime near the Brillouin zone centre Γ, as predicted within the formalism of the linear dielectric response. A choice system to address such issue is ZnSe0.68S0.32 due to the moderate dispersion of its refractive…
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We investigate by near-forward Raman scattering a presumed reinforcement of the (A-C,B-C)-mixed phonon-polariton of a A1-xBxC zincblende alloy when entering its longitudinal optical (LO-)regime near the Brillouin zone centre Γ, as predicted within the formalism of the linear dielectric response. A choice system to address such issue is ZnSe0.68S0.32 due to the moderate dispersion of its refractive index in the visible range, a sine qua non condition to bring the phonon-polariton insight near Γ. The LO-regime is actually accessed by using the 633.0 nm laser excitation, testified by the strong emergence of the (Zn-Se,Zn-S)-mixed phonon-polariton at ultimately small scattering angles.
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Submitted 9 June, 2014; v1 submitted 6 June, 2014;
originally announced June 2014.