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The deformation of wrinkled graphene
Authors:
Zheling Li,
Ian A. Kinloch,
Robert J. Young,
Kostya S. Novoselov,
George Anagnostopoulos,
John Parthenios,
Costas Galiotis,
Konstantinos Papagelis,
Ching-Yu Lu,
Liam Britnell
Abstract:
The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene consists of a hexagonal array of islands of flat monolayer graphene separated by wrinkled material. During deformation, it was found that the rate of shift of the…
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The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene consists of a hexagonal array of islands of flat monolayer graphene separated by wrinkled material. During deformation, it was found that the rate of shift of the Raman 2D band wavenumber per unit strain was less than 25% of that of flat flakes of mechanically-exfoliated graphene, whereas the rate of band broadening per unit strain was about 75% of that of the exfoliated material. This unusual deformation behavior has been modeled in terms of mechanically-isolated graphene islands separated by the graphene wrinkles, with the strain distribution in each graphene island determined using shear lag analysis. The effect of the size and position of the Raman laser beam spot has also been incorporated in the model. The predictions fit well with the behavior observed experimentally for the Raman band shifts and broadening of the wrinkled CVD graphene. The effect of wrinkles upon the efficiency of graphene to reinforce nanocomposites is also discussed.
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Submitted 22 March, 2015;
originally announced March 2015.
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Graphene-protected copper and silver plasmonics
Authors:
V. G. Kravets,
R. Jalil,
Y. -J. Kim,
D. Ansell,
D. E. Aznakayeva,
B. Thackray,
L. Britnell,
B. D. Belle,
F. Withers,
I. P. Radko,
Z. Han,
S. I. Bozhevolnyi,
K. S. Novoselov,
A. K. Geim,
A. N. Grigorenko
Abstract:
Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered (in addition to high losses) by the absence of stable and inexpensive metal films suitable for plasmonic applications. This may seem surprising given the number of metal comp…
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Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered (in addition to high losses) by the absence of stable and inexpensive metal films suitable for plasmonic applications. This may seem surprising given the number of metal compounds to choose from. Unfortunately, most of them either exhibit a strong dam** of surface plasmons or easily oxidize and corrode. To this end, there has been continuous search for alternative plasmonic materials that are, unlike gold, the current metal of choice in plasmonics, compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered with one to a few graphene layers show excellent plasmonics characteristics surpassing those of gold films. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic waveguides and test sensitivity of surface plasmon resonances. Our results are likely to initiate a wide use of graphene-protected plasmonics.
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Submitted 6 October, 2014;
originally announced October 2014.
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Heterostructures produced from nanosheet-based inks
Authors:
F. Withers,
H. Yang,
L. Britnell,
A. P Rooney,
E. Lewis,
A. Felten,
C. R. Woods,
V. Sanchez Romaguera,
T. Georgiou,
A. Eckmann,
Y. J. Kim,
S. G. Yeates,
S. J. Haigh,
A. K. Geim,
K. S. Novoselov,
C. Casiraghi
Abstract:
The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transf…
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The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transfer of individual 2D crystals, though allowing exceptional control over the quality of such structures and interfaces, is not scalable. Here we show that such heterostructures can be assembled from chemically exfoliated 2D crystals, allowing for low-cost and scalable methods to be used in the device fabrication.
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Submitted 4 September, 2014;
originally announced September 2014.
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Singular-phase nanooptics: towards label-free single molecule detection
Authors:
V. G. Kravets,
F. Schedin,
R. Jalil,
L. Britnell,
R. V. Gorbachev,
D. Ansell,
B. Thackray,
K. S. Novoselov,
A. K. Geim,
A. V. Kabashin,
A. N. Grigorenko
Abstract:
Non-trivial topology of phase is crucial for many important physics phenomena such as, for example, the Aharonov-Bohm effect 1 and the Berry phase 2. Light phase allows one to create "twisted" photons 3, 4 , vortex knots 5, dislocations 6 which has led to an emerging field of singular optics relying on abrupt phase changes 7. Here we demonstrate the feasibility of singular visible-light nanooptics…
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Non-trivial topology of phase is crucial for many important physics phenomena such as, for example, the Aharonov-Bohm effect 1 and the Berry phase 2. Light phase allows one to create "twisted" photons 3, 4 , vortex knots 5, dislocations 6 which has led to an emerging field of singular optics relying on abrupt phase changes 7. Here we demonstrate the feasibility of singular visible-light nanooptics which exploits the benefits of both plasmonic field enhancement and non-trivial topology of light phase. We show that properly designed plasmonic nanomaterials exhibit topologically protected singular phase behaviour which can be employed to radically improve sensitivity of detectors based on plasmon resonances. By using reversible hydrogenation of graphene 8 and a streptavidin-biotin test 9, we demonstrate areal mass sensitivity at a level of femto-grams per mm2 and detection of individual biomolecules, respectively. Our proof-of-concept results offer a way towards simple and scalable single-molecular label-free biosensing technologies.
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Submitted 16 April, 2014;
originally announced April 2014.
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Commensurate-incommensurate transition for graphene on hexagonal boron nitride
Authors:
C. R. Woods,
L. Britnell,
A. Eckmann,
R. S. Ma,
J. C. Lu,
H. M. Guo,
X. Lin,
G. L. Yu,
Y. Cao,
R. V. Gorbachev,
A. V. Kretinin,
J. Park,
L. A. Ponomarenko,
M. I. Katsnelson,
Yu. N. Gornostyrev,
K. Watanabe,
T. Taniguchi,
C. Casiraghi,
H. J. Gao,
A. K. Geim,
K. S. Novoselov
Abstract:
When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of c…
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When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of condensed matter physics: from magnetism and dislocations in crystals, to vortices in superconductors, and atomic layers adsorbed on a crystalline surface. Of particular interest might be the properties of topological defects between the two commensurate phases: solitons, domain walls, and dislocation walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotational angle between the two hexagonal lattices, graphene can either stretch to adjust to a slightly different hBN periodicity (the commensurate state found for small rotational angles) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the resulting strain. Such soliton-like objects present significant fundamental interest, and their presence might explain recent observations when the electronic, optical, Raman and other properties of graphene-hBN heterostructures have been notably altered.
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Submitted 20 March, 2014; v1 submitted 12 January, 2014;
originally announced January 2014.
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Do** Mechanisms in Graphene-MoS2 Hybrids
Authors:
B. Sachs,
L. Britnell,
T. O. Wehling,
A. Eckmann,
R. Jalil,
B. D. Belle,
A. I. Lichtenstein,
M. I. Katsnelson,
K. S. Novoselov
Abstract:
We present a joint theoretical and experimental investigation of charge do** and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron do** of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential…
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We present a joint theoretical and experimental investigation of charge do** and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron do** of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local do** levels in the sample.
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Submitted 20 December, 2013; v1 submitted 8 April, 2013;
originally announced April 2013.
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Resonant tunnelling and negative differential conductance in graphene transistors
Authors:
L. Britnell,
R. V. Gorbachev,
A. K. Geim,
L. A. Ponomarenko,
A. Mishchenko,
M. T. Greenaway,
T. M. Fromhold,
K. S. Novoselov,
L. Eaves
Abstract:
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonan…
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The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonant peak in the device characteristics occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Whereas conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.
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Submitted 1 May, 2013; v1 submitted 27 March, 2013;
originally announced March 2013.
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Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
Authors:
Thanasis Georgiou,
Rashid Jalil,
Branson D. Belle,
Liam Britnell,
Roman V. Gorbachev,
Sergey V. Morozov,
Yong-** Kim,
Ali Gholinia,
Sarah J. Haigh,
Oleg Makarovsky,
Laurence Eaves,
Leonid A. Ponomarenko,
Andre K. Geim,
Kostya S. Novoselov,
Artem Mishchenko
Abstract:
The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating ph…
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The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.
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Submitted 21 November, 2012;
originally announced November 2012.
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Probing the Nature of Defects in Graphene by Raman Spectroscopy
Authors:
Axel Eckmann,
Alexandre Felten,
Artem Mishchenko,
Liam Britnell,
Ralph Krupke,
Kostya S. Novoselov,
Cinzia Casiraghi
Abstract:
Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (~ 13) for sp3-defects, it decreases for vacancy-like defects (~…
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Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (~ 13) for sp3-defects, it decreases for vacancy-like defects (~ 7) and reaches a minimum for boundaries in graphite (~3.5).
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Submitted 9 July, 2012;
originally announced July 2012.
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Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
Authors:
S. J. Haigh,
A. Gholinia,
R. Jalil,
S. Romani,
L. Britnell,
D. C. Elias,
K. S. Novoselov,
L. A. Ponomarenko,
A. K. Geim,
R. Gorbachev
Abstract:
By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by v…
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By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images.
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Submitted 4 September, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
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Atomically thin boron nitride: a tunnelling barrier for graphene devices
Authors:
Liam Britnell,
Roman V. Gorbachev,
Rashid Jalil,
Branson D. Belle,
Fred Schedin,
Mikhail I. Katsnelson,
Laurence Eaves,
Sergey V. Morozov,
Alexander S. Mayorov,
Nuno M. R. Peres,
Antonio H. Castro Neto,
Jon Leist,
Andre K. Geim,
Leonid A. Ponomarenko,
Kostya S. Novoselov
Abstract:
We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/B…
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We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.
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Submitted 3 February, 2012;
originally announced February 2012.
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Field-effect tunneling transistor based on vertical graphene heterostructures
Authors:
L. Britnell,
R. V. Gorbachev,
R. Jalil,
B. D. Belle,
F. Schedin,
M. I. Katsnelson,
L. Eaves,
S. V. Morozov,
N. M. R. Peres,
J. Leist,
A. K. Geim,
K. S. Novoselov,
L. A. Ponomarenko
Abstract:
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure…
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We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.
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Submitted 21 December, 2011;
originally announced December 2011.
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Graphene bubbles with controllable curvature
Authors:
T. Georgiou,
L. Britnell,
P. Blake,
R. V. Gorbachev,
A. Gholinia,
A. K. Geim,
C. Casiraghi,
K. S. Novoselov
Abstract:
Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those which allow strong modification of the electronic properties of graphene. We show that the shape of the bubble can be controlled by an external electric field. This effect can be used to make graphene-based adaptive focus…
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Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those which allow strong modification of the electronic properties of graphene. We show that the shape of the bubble can be controlled by an external electric field. This effect can be used to make graphene-based adaptive focus lenses.
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Submitted 25 August, 2011; v1 submitted 8 August, 2011;
originally announced August 2011.
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Strong Plasmonic Enhancement of Photovoltage in Graphene
Authors:
T. J. Echtermeyer,
L. Britnell,
P. K. Jasnos,
A. Lombardo,
R. V. Gorbachev,
A. N. Grigorenko,
A. K. Geim,
A. C. Ferrari,
K. S. Novoselov
Abstract:
Amongst the wide spectrum of potential applications of graphene, ranging from transistors and chemical-sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit/s\cite. However, the…
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Amongst the wide spectrum of potential applications of graphene, ranging from transistors and chemical-sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit/s\cite. However, the low responsivity of graphene-based photodetectors compared to traditional III-V based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodectors can be increased by up to 20 times, due to field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved employing nanostructures of different geometries.
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Submitted 21 July, 2011;
originally announced July 2011.
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Micrometer-scale ballistic transport in encapsulated graphene at room temperature
Authors:
A. S. Mayorov,
R. V. Gorbachev,
S. V. Morozov,
L. Britnell,
R. Jalil,
L. A. Ponomarenko,
P. Blake,
K. S. Novoselov,
K. Watanabe,
T. Taniguchi,
A. K. Geim
Abstract:
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use o…
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Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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Submitted 10 June, 2011; v1 submitted 23 March, 2011;
originally announced March 2011.
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Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
Authors:
R. V. Gorbachev,
I. Riaz,
R. R. Nair,
R. Jalil,
L. Britnell,
B. D. Belle,
E. W. Hill,
K. S. Novoselov,
K. Watanabe,
T. Taniguchi,
A. K. Geim,
P. Blake
Abstract:
We describe the identification of single- and few- layer boron nitride. Its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions. Raman spectroscopy can be used to confirm BN monolayers. They exhibit an upshift in the fundamental Raman mode by up to 4 cm-1. The number of layers in thicker crystals can be counted by exploiting a…
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We describe the identification of single- and few- layer boron nitride. Its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions. Raman spectroscopy can be used to confirm BN monolayers. They exhibit an upshift in the fundamental Raman mode by up to 4 cm-1. The number of layers in thicker crystals can be counted by exploiting an integer-step increase in the Raman intensity and optical contrast.
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Submitted 17 August, 2010;
originally announced August 2010.
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Fluorographene: Two Dimensional Counterpart of Teflon
Authors:
R. R. Nair,
W. C. Ren,
R. Jalil,
I. Riaz,
V. G. Kravets,
L. Britnell,
P. Blake,
F. Schedin,
A. S. Mayorov,
S. Yuan,
M. I. Katsnelson,
H. M. Cheng,
W. Strupinski,
L. G. Bulusheva,
A. V. Okotrub,
I. V. Grigorieva,
A. N. Grigorenko,
K. S. Novoselov,
A. K. Geim
Abstract:
We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >10^12 Ohm per square) with an optical gap of 3 eV. It inherits the mec…
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We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >10^12 Ohm per square) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting Young's modulus of 100 N/m and sustaining strains of 15%. Fluorographene is inert and stable up to 400C even in air, similar to Teflon.
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Submitted 28 September, 2010; v1 submitted 15 June, 2010;
originally announced June 2010.
