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Plasma-wall interaction in laser inertial fusion reactors: novel proposals for radiation tests of first wall materials
Authors:
J. Alvarez Ruiz,
A. Rivera,
K. Mima,
D. Garoz,
R. Gonzalez-Arrabal,
N. Gordillo,
J. Fuchs,
K. Tanaka,
I. Fernandez,
F. Briones,
J. Perlado
Abstract:
Dry-wall laser inertial fusion (LIF) chambers will have to withstand strong bursts of fast charged particles which will deposit tens of kJ m$^{-2}$ and implant more than 10$^{18}$ particles m$^{-2}$ in a few microseconds at a repetition rate of some Hz. Large chamber dimensions and resistant plasma-facing materials must be combined to guarantee the chamber performance as long as possible under the…
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Dry-wall laser inertial fusion (LIF) chambers will have to withstand strong bursts of fast charged particles which will deposit tens of kJ m$^{-2}$ and implant more than 10$^{18}$ particles m$^{-2}$ in a few microseconds at a repetition rate of some Hz. Large chamber dimensions and resistant plasma-facing materials must be combined to guarantee the chamber performance as long as possible under the expected threats: heating, fatigue, cracking, formation of defects, retention of light species, swelling and erosion. Current and novel radiation resistant materials for the first wall need to be validated under realistic conditions. However, at present there is a lack of facilities which can reproduce such ion environments.
This contribution proposes the use of ultra-intense lasers and high-intense pulsed ion beams (HIPIB) to recreate the plasma conditions in LIF reactors. By target normal sheath acceleration, ultra-intense lasers can generate very short and energetic ion pulses with a spectral distribution similar to that of the inertial fusion ion bursts, suitable to validate fusion materials and to investigate the barely known propagation of those bursts through background plasmas/gases present in the reactor chamber. HIPIB technologies, initially developed for inertial fusion driver systems, provide huge intensity pulses which meet the irradiation conditions expected in the first wall of LIF chambers and thus can be used for the validation of materials too.
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Submitted 13 February, 2024;
originally announced February 2024.
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Strain driven migration of In during the growth of InAs/GaAs quantum posts
Authors:
D. Alonso-Álvarez,
B. Alén,
J. M. Ripalda,
A. Rivera,
A. G. Taboada,
J. M. Llorens,
Y. González,
L. González,
F. Briones
Abstract:
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nano…
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Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures.
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Submitted 8 September, 2013; v1 submitted 8 August, 2011;
originally announced August 2011.
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Charge control in laterally coupled double quantum dots
Authors:
G. Muñoz-Matutano,
M. Royo,
J. I. Climente,
J. Canet-Ferrer,
D. Fuster,
P. Alonso-González,
I. Fernández-Martínez,
J. Martínez-Pastor,
Y. González,
L. González,
F. Briones,
B. Alén
Abstract:
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts whi…
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We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.
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Submitted 20 September, 2011; v1 submitted 26 April, 2011;
originally announced April 2011.
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In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts
Authors:
D. Alonso-Álvarez.,
B. Alén,
J. M. Ripalda,
A. Rivera,
A. G. Taboada,
J. M. Llorens,
Y. González,
L. González,
F. Briones
Abstract:
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposite…
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In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposited materials. We find that the substrate temperature plays a major role on the compensation process and it is necessary to take it into account in order to achieve the optimum compensation conditions. The application of the technique to quantum posts has allowed us to fabricate nanostructures of exceptional length (120 nm). In situ accumulated measurements show that, even in shorter nanostrcutures, relaxation processes can be inhibited with the resulting increase in the material quality.
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Submitted 24 February, 2011;
originally announced February 2011.
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Strain balanced quantum posts
Authors:
D. Alonso-Álvarez,
B. Alén,
J. M. Ripalda,
J. Llorens,
A. G. Taboada,
F. Briones,
M. A. Roldán,
J. Hernández-Saz,
D. Hernández-Maldonado,
M. Herrera,
S. I. Molina
Abstract:
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensa…
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Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.
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Submitted 7 March, 2011; v1 submitted 22 February, 2011;
originally announced February 2011.
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Electrical control of a laterally ordered InAs/InP quantum dash array
Authors:
B. Alen,
D. Fuster,
I. Fernandez-Martinez,
J. Martinez-Pastor,
Y. Gonzalez,
F. Briones,
L. Gonzalez
Abstract:
We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with p…
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We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with performance limited by the size inhomogeneity of the self-assembling process.
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Submitted 16 November, 2009; v1 submitted 4 March, 2008;
originally announced March 2008.
