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Metastability in networks of nonlinear stochastic integrate-and-fire neurons
Authors:
Siddharth Paliwal,
Gabriel Koch Ocker,
Braden A. W. Brinkman
Abstract:
Neurons in the brain continuously process the barrage of sensory inputs they receive from the environment. A wide array of experimental work has shown that the collective activity of neural populations encodes and processes this constant bombardment of information. How these collective patterns of activity depend on single neuron properties is often unclear. Single-neuron recordings have shown tha…
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Neurons in the brain continuously process the barrage of sensory inputs they receive from the environment. A wide array of experimental work has shown that the collective activity of neural populations encodes and processes this constant bombardment of information. How these collective patterns of activity depend on single neuron properties is often unclear. Single-neuron recordings have shown that individual neural responses to inputs are nonlinear, which prevents a straightforward extrapolation from single neuron features to emergent collective states. In this work, we use a field theoretic formulation of a stochastic leaky integrate-and-fire model to study the impact of nonlinear intensity functions on macroscopic network activity. We show that the interplay between nonlinear spike emission and membrane potential resets can i) give rise to metastable transitions between active firing rate states, and ii) can enhance or suppress mean firing rates and membrane potentials in opposite directions.
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Submitted 11 June, 2024;
originally announced June 2024.
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Entropy Driven Inductive Response of Topological Insulators
Authors:
A. Mert Bozkurt,
Sofie Kölling,
Alexander Brinkman,
İnanç Adagideli
Abstract:
3D topological insulators are characterized by an insulating bulk and extended surface states exhibiting a helical spin texture. In this work, we investigate the hyperfine interaction between the spin-charge coupled transport of electrons and the nuclear spins in these surface states. Previous work has predicted that in the quantum spin Hall insulator phase, work can be extracted from a bath of po…
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3D topological insulators are characterized by an insulating bulk and extended surface states exhibiting a helical spin texture. In this work, we investigate the hyperfine interaction between the spin-charge coupled transport of electrons and the nuclear spins in these surface states. Previous work has predicted that in the quantum spin Hall insulator phase, work can be extracted from a bath of polarized nuclear spins as a resource. We employ nonequilibrium Green's function analysis to show that a similar effect exists on the surface of a 3D topological insulator, albeit rescaled by the ratio between electronic mean free path and device length. The induced current due to thermal relaxation of polarized nuclear spins has an inductive nature. We emphasize the inductive response by rewriting the current-voltage relation in harmonic response as a lumped element model containing two parallel resistors and an inductor. In a low-frequency analysis, a universal inductance value emerges that is only dependent on the device's aspect ratio. This scaling offers a means of miniaturizing inductive circuit elements. An efficiency estimate follows from comparing the spin-flip induced current to the Ohmic contribution. The inductive effect is most prominent in topological insulators which have a large number of spinful nuclei per coherent segment, of which the volume is given by the mean free path length, Fermi wavelength and penetration depth of the surface state.
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Submitted 1 March, 2024;
originally announced March 2024.
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Applications of information geometry to spiking neural network behavior
Authors:
Jacob T. Crosser,
Braden A. W. Brinkman
Abstract:
The space of possible behaviors complex biological systems may exhibit is unimaginably vast, and these systems often appear to be stochastic, whether due to variable noisy environmental inputs or intrinsically generated chaos. The brain is a prominent example of a biological system with complex behaviors. The number of possible patterns of spikes emitted by a local brain circuit is combinatorially…
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The space of possible behaviors complex biological systems may exhibit is unimaginably vast, and these systems often appear to be stochastic, whether due to variable noisy environmental inputs or intrinsically generated chaos. The brain is a prominent example of a biological system with complex behaviors. The number of possible patterns of spikes emitted by a local brain circuit is combinatorially large, though the brain may not make use of all of them. Understanding which of these possible patterns are actually used by the brain, and how those sets of patterns change as properties of neural circuitry change is a major goal in neuroscience. Recently, tools from information geometry have been used to study embeddings of probabilistic models onto a hierarchy of model manifolds that encode how model behaviors change as a function of their parameters, giving a quantitative notion of "distances" between model behaviors. We apply this method to a network model of excitatory and inhibitory neural populations to understand how the competition between membrane and synaptic response timescales shapes the network's information geometry. The hyperbolic embedding allows us to identify the statistical parameters to which the model behavior is most sensitive, and demonstrate how the ranking of these coordinates changes with the balance of excitation and inhibition in the network.
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Submitted 12 May, 2023;
originally announced May 2023.
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Non-perturbative renormalization group analysis of nonlinear spiking networks
Authors:
Braden A. W. Brinkman
Abstract:
The critical brain hypothesis posits that neural circuits may operate close to critical points of a phase transition, which has been argued to have functional benefits for neural computation. Theoretical and computational studies arguing for or against criticality in neural dynamics have largely relied on establishing power laws in neural data, while a proper understanding of critical phenomena re…
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The critical brain hypothesis posits that neural circuits may operate close to critical points of a phase transition, which has been argued to have functional benefits for neural computation. Theoretical and computational studies arguing for or against criticality in neural dynamics have largely relied on establishing power laws in neural data, while a proper understanding of critical phenomena requires a renormalization group (RG) analysis. However, neural activity is typically non-Gaussian, nonlinear, and non-local, rendering models that capture all of these features difficult to study using standard statistical physics techniques. We overcome these issues by adapting the non-perturbative renormalization group (NPRG) to work on network models of stochastic spiking neurons. Within a ``local potential approximation,'' we are able to calculate non-universal quantities such as the effective firing rate nonlinearity of the network, allowing improved quantitative estimates of network statistics. We also derive the dimensionless flow equation that admits universal critical points in the renormalization group flow of the model, and identify two important types of critical points: in networks with an absorbing state there is a fixed point corresponding to a non-equilibrium phase transition between sustained activity and extinction of activity, and in spontaneously active networks there is a physically meaningful \emph{complex valued} critical point, corresponding to a discontinuous transition between high and low firing rate states. Our analysis suggests these fixed points are related to two well-known universality classes, the non-equilibrium directed percolation class, and the kinetic Ising model with explicitly broken symmetry, respectively.
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Submitted 17 March, 2023; v1 submitted 23 January, 2023;
originally announced January 2023.
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Multiple Andreev reflections in two-dimensional Josephson junctions with broken time-reversal symmetry
Authors:
Linde A. B. Olde Olthof,
Stijn R. de Wit,
Shu-Ichiro Suzuki,
Inanc Adagideli,
Jason W. A. Robinson,
Alexander Brinkman
Abstract:
Andreev bound states (ABS) occur in Josephson junctions when the total phase of the Andreev and normal reflections is a multiple of $2π$. In ballistic junctions with an applied voltage bias, a quasi-particle undergoes multiple Andreev reflections before entering the leads, resulting in peaks in the current-voltage $I(V)$ curve. Here we present a general model for Josephson junctions with spin-acti…
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Andreev bound states (ABS) occur in Josephson junctions when the total phase of the Andreev and normal reflections is a multiple of $2π$. In ballistic junctions with an applied voltage bias, a quasi-particle undergoes multiple Andreev reflections before entering the leads, resulting in peaks in the current-voltage $I(V)$ curve. Here we present a general model for Josephson junctions with spin-active interlayers i.e., magnetic or topological materials with broken time-reversal symmetry. We investigate how ABS change the peak positions and shape of $I(V)$, which becomes asymmetric for a single incident angle. We show how the angle-resolved $I(V)$ curve becomes a spectroscopic tool for the chirality and degeneracy of ABS.
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Submitted 5 January, 2023;
originally announced January 2023.
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Topological information device operating at the Landauer limit
Authors:
A. Mert Bozkurt,
Alexander Brinkman,
İnanç Adagideli
Abstract:
We propose and theoretically investigate a novel Maxwell's demon implementation based on the spin-momentum locking property of topological matter. We use nuclear spins as a memory resource which provides the advantage of scalability. We show that this topological information device can ideally operate at the Landauer limit; the heat dissipation required to erase one bit of information stored in th…
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We propose and theoretically investigate a novel Maxwell's demon implementation based on the spin-momentum locking property of topological matter. We use nuclear spins as a memory resource which provides the advantage of scalability. We show that this topological information device can ideally operate at the Landauer limit; the heat dissipation required to erase one bit of information stored in the demon's memory approaches $k_B T\ln2$. Furthermore, we demonstrate that all available energy, $k_B T\ln2$ per one bit of information, can be extracted in the form of electrical work. Finally, we find that the current-voltage characteristics of topological information device satisfy the conditions of an ideal memristor.
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Submitted 1 October, 2023; v1 submitted 30 December, 2022;
originally announced December 2022.
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Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ thin films
Authors:
L. Mulder,
C. Castenmiller,
F. J. Witmans,
S. Smit,
M. S. Golden,
H. J. W. Zandvliet,
P. L. de Boeij,
A. Brinkman
Abstract:
High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculatio…
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High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculations. We find that ultrathin slabs of the three-dimensional topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ display topological surface states, surface states with large weight on the outermost Te atomic layer, and dispersive bulk energy levels that are quantized. We observe that the bandwidth of the bulk levels is strongly reduced. These bunched bulk states as well as the surface states give rise to strong peaks in the local density of states.
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Submitted 23 December, 2021; v1 submitted 21 December, 2021;
originally announced December 2021.
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Metastable dynamics of neural circuits and networks
Authors:
Braden A. W. Brinkman,
Han Yan,
Arianna Maffei,
Il Memming Park,
Alfredo Fontanini,
** Wang,
Giancarlo La Camera
Abstract:
Cortical neurons emit seemingly erratic trains of action potentials or "spikes," and neural network dynamics emerge from the coordinated spiking activity within neural circuits. These rich dynamics manifest themselves in a variety of patterns, which emerge spontaneously or in response to incoming activity produced by sensory inputs. In this Review, we focus on neural dynamics that is best understo…
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Cortical neurons emit seemingly erratic trains of action potentials or "spikes," and neural network dynamics emerge from the coordinated spiking activity within neural circuits. These rich dynamics manifest themselves in a variety of patterns, which emerge spontaneously or in response to incoming activity produced by sensory inputs. In this Review, we focus on neural dynamics that is best understood as a sequence of repeated activations of a number of discrete hidden states. These transiently occupied states are termed "metastable" and have been linked to important sensory and cognitive functions. In the rodent gustatory cortex, for instance, metastable dynamics have been associated with stimulus coding, with states of expectation, and with decision making. In frontal, parietal, and motor areas of macaques, metastable activity has been related to behavioral performance, choice behavior, task difficulty, and attention. In this article, we review the experimental evidence for neural metastable dynamics together with theoretical approaches to the study of metastable activity in neural circuits. These approaches include (i) a theoretical framework based on non-equilibrium statistical physics for network dynamics; (ii) statistical approaches to extract information about metastable states from a variety of neural signals; and (iii) recent neural network approaches, informed by experimental results, to model the emergence of metastable dynamics. By discussing these topics, we aim to provide a cohesive view of how transitions between different states of activity may provide the neural underpinnings for essential functions such as perception, memory, expectation, or decision making, and more generally, how the study of metastable neural activity may advance our understanding of neural circuit function in health and disease.
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Submitted 30 March, 2022; v1 submitted 6 October, 2021;
originally announced October 2021.
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Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
I. Leermakers,
K. Rubi,
M. Yang,
B. Kerdi,
M. Goiran,
W. Escoffier,
A. S. Rana,
A. E. M. Smink,
A. Brinkman,
H. Hilgenkamp,
J. C. Maan,
U. Zeitler
Abstract:
We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers…
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We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density ($\sim 2 \times 10^{12}$ cm$^{-2}$) and effective mass ($\sim 1.7 ~m_e$) estimated from the oscillations suggest that the high-mobility electrons occupy the d$_{xz/yz}$ subbands of Ti:t$_{2g}$ orbital extending deep within the conducting sheet of SrTiO$_3$. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures.
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Submitted 20 August, 2021;
originally announced August 2021.
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Thickness-Dependent Band Gap Modification in BaBiO$_{3}$
Authors:
Rosa Luca Bouwmeester,
Alexander Brinkman,
Kai Sotthewes
Abstract:
The material BaBiO$_{3}$ is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO$_{3}$ is suggested to return to its undistorted cubic phase where the oxygen octahedra breathing mode will be suppresse as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic pr…
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The material BaBiO$_{3}$ is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO$_{3}$ is suggested to return to its undistorted cubic phase where the oxygen octahedra breathing mode will be suppresse as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO$_{3}$ thickness series are studied using \textit{in-situ} scanning tunneling microscopy. We observe a wide-gap ($E_\textrm{G}$~$>$ 1.2 V) to small-gap~($E_\textrm{G}$~$\approx$ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO$_{3}$ film thickness. However, even for an ultra-thin BaBiO$_{3}$ film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.
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Submitted 31 March, 2021;
originally announced March 2021.
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Machine Vision based Sample-Tube Localization for Mars Sample Return
Authors:
Shreyansh Daftry,
Barry Ridge,
William Seto,
Tu-Hoa Pham,
Peter Ilhardt,
Gerard Maggiolino,
Mark Van der Merwe,
Alex Brinkman,
John Mayo,
Eric Kulczyski,
Renaud Detry
Abstract:
A potential Mars Sample Return (MSR) architecture is being jointly studied by NASA and ESA. As currently envisioned, the MSR campaign consists of a series of 3 missions: sample cache, fetch and return to Earth. In this paper, we focus on the fetch part of the MSR, and more specifically the problem of autonomously detecting and localizing sample tubes deposited on the Martian surface. Towards this…
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A potential Mars Sample Return (MSR) architecture is being jointly studied by NASA and ESA. As currently envisioned, the MSR campaign consists of a series of 3 missions: sample cache, fetch and return to Earth. In this paper, we focus on the fetch part of the MSR, and more specifically the problem of autonomously detecting and localizing sample tubes deposited on the Martian surface. Towards this end, we study two machine-vision based approaches: First, a geometry-driven approach based on template matching that uses hard-coded filters and a 3D shape model of the tube; and second, a data-driven approach based on convolutional neural networks (CNNs) and learned features. Furthermore, we present a large benchmark dataset of sample-tube images, collected in representative outdoor environments and annotated with ground truth segmentation masks and locations. The dataset was acquired systematically across different terrain, illumination conditions and dust-coverage; and benchmarking was performed to study the feasibility of each approach, their relative strengths and weaknesses, and robustness in the presence of adverse environmental conditions.
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Submitted 17 March, 2021;
originally announced March 2021.
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Rover Relocalization for Mars Sample Return by Virtual Template Synthesis and Matching
Authors:
Tu-Hoa Pham,
William Seto,
Shreyansh Daftry,
Barry Ridge,
Johanna Hansen,
Tristan Thrush,
Mark Van der Merwe,
Gerard Maggiolino,
Alexander Brinkman,
John Mayo,
Yang Cheng,
Curtis Padgett,
Eric Kulczycki,
Renaud Detry
Abstract:
We consider the problem of rover relocalization in the context of the notional Mars Sample Return campaign. In this campaign, a rover (R1) needs to be capable of autonomously navigating and localizing itself within an area of approximately 50 x 50 m using reference images collected years earlier by another rover (R0). We propose a visual localizer that exhibits robustness to the relatively barren…
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We consider the problem of rover relocalization in the context of the notional Mars Sample Return campaign. In this campaign, a rover (R1) needs to be capable of autonomously navigating and localizing itself within an area of approximately 50 x 50 m using reference images collected years earlier by another rover (R0). We propose a visual localizer that exhibits robustness to the relatively barren terrain that we expect to find in relevant areas, and to large lighting and viewpoint differences between R0 and R1. The localizer synthesizes partial renderings of a mesh built from reference R0 images and matches those to R1 images. We evaluate our method on a dataset totaling 2160 images covering the range of expected environmental conditions (terrain, lighting, approach angle). Experimental results show the effectiveness of our approach. This work informs the Mars Sample Return campaign on the choice of a site where Perseverance (R0) will place a set of sample tubes for future retrieval by another rover (R1).
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Submitted 4 March, 2021;
originally announced March 2021.
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Artificial oxide heterostructures with non-trivial topology
Authors:
Pieter M. Gunnink,
Rosa Luca Bouwmeester,
Alexander Brinkman
Abstract:
In the quest for topological insulators with large band gaps, heterostructures with Rashba spin-orbit interactions come into play. Transition metal oxides with heavy ions are especially interesting in this respect. We discuss the design principles for stacking oxide Rashba layers. Assuming a single layer with a two-dimensional electron gas (2DEG) on both interfaces as a building block, a two-dimen…
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In the quest for topological insulators with large band gaps, heterostructures with Rashba spin-orbit interactions come into play. Transition metal oxides with heavy ions are especially interesting in this respect. We discuss the design principles for stacking oxide Rashba layers. Assuming a single layer with a two-dimensional electron gas (2DEG) on both interfaces as a building block, a two-dimensional topological insulating phase is present when negative coupling between the 2DEGs exists. When stacking multiple building blocks, a two-dimensional or three-dimensional topological insulator is artificially created, depending on the intra- and interlayer coupling strengths and the number of building blocks. We show that the three-dimensional topological insulator is protected by reflection symmetry, and can therefore be classified as a topological crystalline insulator. In order to isolate the topological states from bulk states, the intralayer coupling term needs to be quadratic in momentum. It is described how such a quadratic coupling could potentially be realized by taking buckling within the layers into account. The buckling, thereby, brings the idea of stacked Rashba system very close to the alternative approach of realizing the buckled honeycomb lattice in [111]-oriented perovskite oxides.
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Submitted 16 November, 2020;
originally announced November 2020.
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Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces
Authors:
N. Lebedev,
M. Stehno,
A. Rana,
N. Gauquelin,
J. Verbeeck,
A. Brinkman,
J. Aarts
Abstract:
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conducti…
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We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the 2-dimensional electron gas usually observed at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates presence of a spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.
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Submitted 7 August, 2020;
originally announced August 2020.
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Reducing electronic transport dimension to topological hinge states by increasing geometry size of Dirac semimetal Josephson junctions
Authors:
Cai-Zhen Li,
An-Qi Wang,
Chuan Li,
Wen-Zhuang Zheng,
Alexander Brinkman,
Da-Peng Yu,
Zhi-Min Liao
Abstract:
The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd3As2 is predicted to be a higher-order topological semimetal, possessing three-dimensional (3D) bulk Dirac fermions, two-dimensional (2D) Fermi arcs, and one-dimensional (1D) hinge states. These topological states have different characteristic length scales in elect…
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The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd3As2 is predicted to be a higher-order topological semimetal, possessing three-dimensional (3D) bulk Dirac fermions, two-dimensional (2D) Fermi arcs, and one-dimensional (1D) hinge states. These topological states have different characteristic length scales in electronic transport, allowing to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd3As2-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding the higher-order topological phase in a 3D Dirac semimetal.
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Submitted 18 April, 2020;
originally announced April 2020.
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Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO3
Authors:
N. Lebedev,
M. Stehno,
A. Rana,
P. Reith,
N. Gauquelin,
J. Verbeeck,
H. Hilgenkamp,
A. Brinkman,
J. Aarts
Abstract:
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the in…
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The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition, while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic filds lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities.
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Submitted 26 February, 2020;
originally announced February 2020.
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Josephson Effect and Charge Distribution in Thin Bi$_2$Te$_3$ Topological Insulators
Authors:
Martin P. Stehno,
Prosper Ngabonziza,
Hiroaki Myoren,
Alexander Brinkman
Abstract:
Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, we study the Josephson effect, magnetotransport, and weak anti-localization in bottom-gated thin Bi$_2$Te$_3$ topological insulator films.We…
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Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, we study the Josephson effect, magnetotransport, and weak anti-localization in bottom-gated thin Bi$_2$Te$_3$ topological insulator films.We compare the experimental carrier densities to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and find excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.
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Submitted 20 December, 2019;
originally announced December 2019.
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Magnetoresistance from time-reversal symmetry breaking in topological materials
Authors:
J. C. de Boer,
D. P. Leusink,
A. Brinkman
Abstract:
Magnetotransport measurements are a popular way of characterizing the electronic structure of topological materials and often the resulting datasets cannot be described by the well-known Drude model due to large, non-parabolic contributions. In this work, we focus on the effects of magnetic fields on topological materials through a Zeeman term included in the model Hamiltonian. To this end, we re-…
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Magnetotransport measurements are a popular way of characterizing the electronic structure of topological materials and often the resulting datasets cannot be described by the well-known Drude model due to large, non-parabolic contributions. In this work, we focus on the effects of magnetic fields on topological materials through a Zeeman term included in the model Hamiltonian. To this end, we re-evaluate the simplifications made in the derivations of the Drude model and pinpoint the scattering time and Fermi velocity as Zeeman-term dependent factors in the conductivity tensor. The driving mechanisms here are the aligment of spins along the magnetic field direction, which allows for backscattering, and a significant change to the Fermi velocity by the opening of a hybridization gap. After considering 2D and 3D Dirac states, as well as 2D Rashba surface states and the quasi-2D bulk states of 3D topological insulators, we find that the 2D Dirac states on the surfaces of 3D topological insulators produce magnetoresistance, that is significant enough to be noticable in experiments. As this magnetoresistance effect is strongly dependent on the spin-orbit energy, it can be used as a telltale sign of a Fermi energy located close to the Dirac point.
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Submitted 22 October, 2019;
originally announced October 2019.
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Origin of the butterfly magnetoresistance in ZrSiS
Authors:
J. A. Voerman,
L. Mulder,
J. C. de Boer,
Y. Huang,
L. M. Schoop,
Chuan Li,
A. Brinkman
Abstract:
ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crysta…
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ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.
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Submitted 22 October, 2019;
originally announced October 2019.
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Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction
Authors:
Joost Ridderbos,
Matthias Brauns,
Ang Li,
Erik P. A. M. Bakkers,
Alexander Brinkman,
Wilfred G. van der Wiel,
Floris A. Zwanenburg
Abstract:
We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect b…
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We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect by showing up to 23 Shapiro steps. We observe multiple Andreev reflections up to the sixth order, indicating that charges can scatter elastically many times inside our junction, and that our interfaces between superconductor and semiconductor are transparent and have low disorder.
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Submitted 20 August, 2019;
originally announced August 2019.
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Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires
Authors:
Joost Ridderbos,
Matthias Brauns,
Jie Shen,
Folkert K. de Vries,
Ang Li,
Sebastian Kölling,
Marcel A. Verheijen,
Alexander Brinkman,
Wilfred G. van der Wiel,
Erik P. A. M. Bakkers,
Floris A. Zwanenburg
Abstract:
We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at…
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We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction.
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Submitted 20 December, 2019; v1 submitted 11 July, 2019;
originally announced July 2019.
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Stabilization of the perovskite phase in the Y-Bi-O system by using a BaBiO$_{3}$ buffer layer
Authors:
Rosa Luca Bouwmeester,
Kit de Hond,
Nicolas Gauquelin,
Jo Verbeeck,
Gertjan Koster,
Alexander Brinkman
Abstract:
A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO$_{3}$. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO$_{3}$ buffer layer. The BaBiO$_{3}$ film overcomes the large lattice mismatch of 12% with the SrTiO$_{3}$ substrate by forming a rocksalt structure in between the two p…
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A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO$_{3}$. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO$_{3}$ buffer layer. The BaBiO$_{3}$ film overcomes the large lattice mismatch of 12% with the SrTiO$_{3}$ substrate by forming a rocksalt structure in between the two perovskite structures. Depositing an YBiO$_{3}$ film directly on a SrTiO$_{3}$ substrate gives a fluorite structure. However, when the Y-Bi-O system is deposited on top of the buffer layer with the correct crystal phase and comparable lattice constant, a single oriented perovskite structure with the expected lattice constants is observed.
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Submitted 6 March, 2019;
originally announced March 2019.
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Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$
Authors:
Jorrit C. de Boer,
Daan H. Wielens,
Joris A. Voerman,
Bob de Ronde,
Yingkai Huang,
Mark S. Golden,
Chuan Li,
Alexander Brinkman
Abstract:
The field of topological materials science has recently been focussing on three-dimensional Dirac semimetals, which exhibit robust Dirac phases in the bulk. However, the absence of characteristic surface states in accidental Dirac semimetals (DSM) makes it difficult to experimentally verify claims about the topological nature using commonly used surface-sensitive techniques. The chiral magnetic ef…
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The field of topological materials science has recently been focussing on three-dimensional Dirac semimetals, which exhibit robust Dirac phases in the bulk. However, the absence of characteristic surface states in accidental Dirac semimetals (DSM) makes it difficult to experimentally verify claims about the topological nature using commonly used surface-sensitive techniques. The chiral magnetic effect (CME), which originates from the Weyl nodes, causes an $\textbf{E}\cdot\textbf{B}$-dependent chiral charge polarization, which manifests itself as negative magnetoresistance. We exploit the extended lifetime of the chirally polarized charge and study the CME through both local and non-local measurements in Hall bar structures fabricated from single crystalline flakes of the DSM Bi$_{0.97}$Sb$_{0.03}$. From the non-local measurement results we find a chiral charge relaxation time which is over one order of magnitude larger than the Drude transport lifetime, underlining the topological nature of Bi$_{0.97}$Sb$_{0.03}$.
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Submitted 31 January, 2019;
originally announced January 2019.
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Dominant $s$-wave superconducting gap in PdTe$_2$ observed by tunneling spectroscopy on side-junctions
Authors:
J. A. Voerman,
J. C. de Boer,
T. Hashimoto,
Yingkai Huang,
Chuan Li,
A. Brinkman
Abstract:
We have fabricated superconductor-normal metal side-junctions with different barrier transparencies out of PdTe$_2$ crystalline flakes and measured the differential conductance spectra. Modeling our measurements using a modified Blonder Tinkham Klapwijk (BTK) formalism confirms that the superconductivity is mostly comprised of the conventional $s$-wave symmetry. We have found that for junctions wi…
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We have fabricated superconductor-normal metal side-junctions with different barrier transparencies out of PdTe$_2$ crystalline flakes and measured the differential conductance spectra. Modeling our measurements using a modified Blonder Tinkham Klapwijk (BTK) formalism confirms that the superconductivity is mostly comprised of the conventional $s$-wave symmetry. We have found that for junctions with very low barrier transparencies, the junctions can enter a thermal regime, where the critical current becomes important. Adding this to the BTK-model allows us to accurately fit the experimental data, from which we conclude that the superconductivity in the $a$-$b$ plane of PdTe$_2$ is dominated by conventional $s$-wave pairing.
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Submitted 31 January, 2019; v1 submitted 14 January, 2019;
originally announced January 2019.
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Josephson effect in a few-hole quantum dot
Authors:
Joost Ridderbos,
Matthias Brauns,
Jie Shen,
Folkert K. de Vries,
Ang Li,
Erik P. A. M. Bakkers,
Alexander Brinkman,
Floris A. Zwanenburg
Abstract:
We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is…
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We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions.
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Submitted 22 September, 2018;
originally announced September 2018.
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Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
Authors:
N. W. Hendrickx,
M. L. V. Tagliaferri,
M. Kouwenhoven,
R. Li,
D. P. Franke,
A. Sammak,
A. Brinkman,
G. Scappucci,
M. Veldhorst
Abstract:
We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances, demonstrating ballistic transport. The magnetic field dependen…
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We fabricate Josephson field-effect-transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances, demonstrating ballistic transport. The magnetic field dependence of the supercurrent follows a clear Fraunhofer-like pattern and Shapiro steps appear upon microwave irradiation. Multiple Andreev reflections give rise to conductance enhancement and evidence a transparent interface, confirmed by analyzing the excess current. These demonstrations of ballistic superconducting transport are promising for hybrid quantum technology in germanium.
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Submitted 2 August, 2018;
originally announced August 2018.
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Zeeman effect induced 0-$π$ transitions in ballistic Dirac semimetal Josephson junctions
Authors:
Chuan Li,
Bob de Ronde,
Jorrit de Boer,
Joost Ridderbos,
Floris Zwanenburg,
Yingkai Huang,
Alexander Golubov,
Alexander Brinkman
Abstract:
One of the consequences of Cooper pairs having a finite momentum in the interlayer of a Josephson junction, is $π$-junction behavior. The finite momentum can either be due to an exchange field in ferromagnetic Josephson junctions, or due to the Zeeman effect. Here, we report the observation of Zeeman effect induced 0-$π$ transitions in Bi$_{1-x}$Sb$_x$, 3D Dirac semimetal-based Josephson junctions…
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One of the consequences of Cooper pairs having a finite momentum in the interlayer of a Josephson junction, is $π$-junction behavior. The finite momentum can either be due to an exchange field in ferromagnetic Josephson junctions, or due to the Zeeman effect. Here, we report the observation of Zeeman effect induced 0-$π$ transitions in Bi$_{1-x}$Sb$_x$, 3D Dirac semimetal-based Josephson junctions. The large g-factor of the Zeeman effect from a magnetic field applied in the plane of the junction allows tuning of the Josephson junctions from 0- to $π$- regimes. This is revealed by sign changes in the modulation of the critical current by applied magnetic field of an asymmetric superconducting quantum interference device (SQUID). Additionally, we directly measure a non-sinusoidal current-phase relation in the asymmetric SQUID, consistent with models for ballistic Josephson transport.
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Submitted 16 July, 2019; v1 submitted 20 July, 2018;
originally announced July 2018.
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Bulk and surface states carried supercurrent in ballistic Nb-Dirac semimetal Cd3As2 nanowire-Nb junctions
Authors:
Cai-Zhen Li,
Chuan Li,
Li-Xian Wang,
Shuo Wang,
Zhi-Min Liao,
Alexander Brinkman,
Da-Peng Yu
Abstract:
A three-dimensional Dirac semimetal has bulk Dirac cones in all three momentum directions and Fermi arc-like surface states, and can be converted into a Weyl semimetal by breaking time-reversal symmetry. However, the highly conductive bulk state usually hides the electronic transport from the surface state in Dirac semimetal. Here, we demonstrate the supercurrent carried by bulk and surface states…
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A three-dimensional Dirac semimetal has bulk Dirac cones in all three momentum directions and Fermi arc-like surface states, and can be converted into a Weyl semimetal by breaking time-reversal symmetry. However, the highly conductive bulk state usually hides the electronic transport from the surface state in Dirac semimetal. Here, we demonstrate the supercurrent carried by bulk and surface states in Nb-Cd3As2 nanowire-Nb short and long junctions, respectively. For the 1 micrometer long junction, the Fabry-Perot interferences induced oscillations of the critical supercurrent are observed, suggesting the ballistic transport of the surface states carried supercurrent, where the bulk states are decoherent and the topologically protected surface states still keep coherent. Moreover, a superconducting dome is observed in the long junction, which is attributed to the enhanced dephasing from the interaction between surface and bulk states as tuning gate voltage to increase the carrier density. The superconductivity of topological semimetal nanowire is promising for braiding of Majorana fermions toward topological quantum computing.
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Submitted 28 March, 2018;
originally announced March 2018.
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Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films
Authors:
Prosper Ngabonziza,
Yi Wang,
Alexander Brinkman
Abstract:
An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band…
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An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi$_2$Te$_3$ thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two-dimensional in nature.
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Submitted 23 January, 2018;
originally announced January 2018.
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Correlation between Superconductivity, Band Filling and Electron Confinement at the LaAlO$_{3}$-SrTiO$_{3}$ Interface
Authors:
A. E. M. Smink,
M. P. Stehno,
J. C. de Boer,
A. Brinkman,
W. G. van der Wiel,
H. Hilgenkamp
Abstract:
By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of…
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By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of this behavior by comparing the gate-dependence of $T_c$ to the corresponding evolution of the band filling with gate voltage. For several backgate voltages, we observe maximum $T_c$ to consistently coincide with a kink in tuning the band filling for high topgate voltage. Self-consistent Schrödinger-Poisson calculations relate this kink to a Lifshitz transition of the second $d_{xy}$ subband. These results establish a major role for confinement-induced subbands in the phase diagram of SrTiO$_3$ surface states, and establish gating as a means to control the relative energy of these states.
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Submitted 24 May, 2018; v1 submitted 9 January, 2018;
originally announced January 2018.
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Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
Authors:
Peter Schüffelgen,
Daniel Rosenbach,
Chuan Li,
Tobias Schmitt,
Michael Schleenvoigt,
Abdur R. Jalil,
Jonas Kölzer,
Meng Wang,
Benjamin Bennemann,
Umut Parlak,
Lidia Kibkalo,
Martina Luysberg,
Gregor Mussler,
Alexander. A. Golubov,
Alexander Brinkman,
Thomas Schäpers,
Detlev Grützmacher
Abstract:
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. H…
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Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. Here, we present an in-situ process, which allows to fabricate such hybrids by combining molecular beam epitaxy and stencil lithography. As-prepared Josephson junctions show nearly perfect interface transparency and very large $I_CR_N$ products. The Shapiro response of radio frequency measurements indicates the presence of gapless Andreev bound states, so-called Majorana bound states.
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Submitted 20 October, 2018; v1 submitted 5 November, 2017;
originally announced November 2017.
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Scaling Universality at the Dynamic Vortex Mott Transition
Authors:
Martijn Lankhorst,
Nicola Poccia,
Martin P. Stehno,
Alexey Galda,
Himadri Barman,
Francesco Coneri,
Hans Hilgenkamp,
Alexander Brinkman,
Alexander A. Golubov,
Vikram Tripathi,
Tatyana I. Baturina,
Valerii M. Vinokur
Abstract:
The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects inherent to electronic and atomic systems, is to employ the vortex Mott states formed by superconducting vortices in a regular array of pinning sites. The appl…
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The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects inherent to electronic and atomic systems, is to employ the vortex Mott states formed by superconducting vortices in a regular array of pinning sites. The applied electric current delocalizes vortices and drives the dynamic vortex Mott transition. Here we report the critical behavior of the vortex system as it crosses the DMT line, driven by either current or temperature. We find universal scaling with respect to both, expressed by the same scaling function and characterized by a single critical exponent coinciding with the exponent for the thermodynamic Mott transition. We develop a theory for the DMT based on the parity reflection-time reversal (PT) symmetry breaking formalism and find that the nonequilibrium-induced Mott transition has the same critical behavior as thermal Mott transition. Our findings demonstrate the existence of physical systems in which the effect of nonequilibrium drive is to generate effective temperature and hence the transition belonging in the thermal universality class. We establish PT symmetry-breaking as a universal mechanism for out-of-equilibrium phase transitions.
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Submitted 1 August, 2017;
originally announced August 2017.
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Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe$_2$
Authors:
Chuan Li,
Bob de Ronde,
Artem Nikitin,
Yingkai Huang,
Mark S. Golden,
Anne de Visser,
Alexander Brinkman
Abstract:
The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall ed…
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The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is integer valued only when the scattering is strong. For weaker interaction, a non-integer quantum Hall effect is expected and measured.
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Submitted 21 July, 2017;
originally announced July 2017.
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Conduction spectroscopy of a proximity induced superconducting topological insulator
Authors:
Martin P. Stehno,
Nico W. Hendrickx,
Marieke Snelder,
Thijs Scholten,
Yingkai Huang,
Mark S. Golden,
Alexander Brinkman
Abstract:
The combination of superconductivity and the helical spin-momentum locking at the surface state of a topological insulator (TI) has been predicted to give rise to p-wave superconductivity and Majorana bound states. The superconductivity can be induced by the proximity effect of a an s-wave superconductor (S) into the TI. To probe the superconducting correlations inside the TI, dI/dV spectroscopy h…
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The combination of superconductivity and the helical spin-momentum locking at the surface state of a topological insulator (TI) has been predicted to give rise to p-wave superconductivity and Majorana bound states. The superconductivity can be induced by the proximity effect of a an s-wave superconductor (S) into the TI. To probe the superconducting correlations inside the TI, dI/dV spectroscopy has been performed across such S-TI interfaces. Both the alloyed Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and the stoichiometric BiSbTeSe$_2$ have been used as three dimensional TI. In the case of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$, the presence of disorder induced electron-electron interactions can give rise to an additional zero-bias resistance peak. For the stoichiometric BiSbTeSe$_2$ with less disorder, tunnel barriers were employed in order to enhance the signal from the interface. The general observations in the spectra of a large variety of samples are conductance dips at the induced gap voltage, combined with an increased sub-gap conductance, consistent with p-wave predictions. The induced gap voltage is typically smaller than the gap of the Nb superconducting electrode, especially in the presence of an intentional tunnel barrier. Additional uncovered spectroscopic features are oscillations that are linearly spaced in energy, as well as a possible second order parameter component.
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Submitted 12 July, 2017;
originally announced July 2017.
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$4π$ periodic Andreev bound states in a Dirac semimetal
Authors:
Chuan Li,
Jorrit C. de Boer,
Bob de Ronde,
Shyama V. Ramankutty,
Erik van Heumen,
Yingkai Huang,
Anne de Visser,
Alexander A. Golubov,
Mark S. Golden,
Alexander Brinkman
Abstract:
Electrons in a Dirac semimetals possess linear dispersion in all three spatial dimensions, and form part of a develo** platform of novel quantum materials. Bi$_{1-x}$Sb$_x$ supports a three-dimensional Dirac cone at the Sb-induced band inversion point. Nanoscale phase-sensitive junction technology is used to induce superconductivity in this Dirac semimetal. Radio frequency irradiation experiment…
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Electrons in a Dirac semimetals possess linear dispersion in all three spatial dimensions, and form part of a develo** platform of novel quantum materials. Bi$_{1-x}$Sb$_x$ supports a three-dimensional Dirac cone at the Sb-induced band inversion point. Nanoscale phase-sensitive junction technology is used to induce superconductivity in this Dirac semimetal. Radio frequency irradiation experiments reveal a significant contribution of 4$π$-periodic Andreev bound states to the supercurrent in Nb-Bi$_{0.97}$Sb$_{0.03}$-Nb Josephson junctions. The conditions for a substantial $4π$ contribution to the supercurrent are favourable because of the Dirac cone's topological protection against backscattering, providing very broad transmission resonances. The large g-factor of the Zeeman effect from a magnetic field applied in the plane of the junction, allows tuning of the Josephson junctions from 0 to $π$ regimes.
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Submitted 11 July, 2017;
originally announced July 2017.
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Predicting how and when hidden neurons skew measured synaptic interactions
Authors:
Braden A. W. Brinkman,
Fred Rieke,
Eric Shea-Brown,
Michael A. Buice
Abstract:
A major obstacle to understanding neural coding and computation is the fact that experimental recordings typically sample only a small fraction of the neurons in a circuit. Measured neural properties are skewed by interactions between recorded neurons and the "hidden" portion of the network. To properly interpret neural data and determine how biological structure gives rise to neural circuit funct…
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A major obstacle to understanding neural coding and computation is the fact that experimental recordings typically sample only a small fraction of the neurons in a circuit. Measured neural properties are skewed by interactions between recorded neurons and the "hidden" portion of the network. To properly interpret neural data and determine how biological structure gives rise to neural circuit function, we thus need a better understanding of the relationships between measured effective neural properties and the true underlying physiological properties. Here, we focus on how the effective spatiotemporal dynamics of the synaptic interactions between neurons are reshaped by coupling to unobserved neurons. We find that the effective interactions from a pre-synaptic neuron $r'$ to a post-synaptic neuron $r$ can be decomposed into a sum of the true interaction from $r'$ to $r$ plus corrections from every directed path from $r'$ to $r$ through unobserved neurons. Importantly, the resulting formula reveals when the hidden units have---or do not have---major effects on resha** the interactions among observed neurons. As a particular example of interest, we derive a formula for the impact of hidden units in random networks with "strong" coupling---connection weights that scale with $1/\sqrt{N}$, where $N$ is the network size, precisely the scaling observed in recent experiments. With this quantitative relationship between measured and true interactions, we can study how network properties shape effective interactions, which properties are relevant for neural computations, and how to manipulate effective interactions.
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Submitted 15 August, 2017; v1 submitted 2 February, 2017;
originally announced February 2017.
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Insights into teaching quantum mechanics in secondary and lower undergraduate education
Authors:
Kim Krijtenburg-Lewerissa,
Henk Pol,
Alexander Brinkman,
Wouter van Joolingen
Abstract:
This study presents a review of the current state of research on teaching quantum mechanics in secondary and lower undergraduate education. A conceptual approach to quantum mechanics is being implemented in more and more introductory physics courses around the world. Because of the differences between the conceptual nature of quantum mechanics and classical physics, research on misconceptions, tes…
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This study presents a review of the current state of research on teaching quantum mechanics in secondary and lower undergraduate education. A conceptual approach to quantum mechanics is being implemented in more and more introductory physics courses around the world. Because of the differences between the conceptual nature of quantum mechanics and classical physics, research on misconceptions, testing, and teaching strategies for introductory quantum mechanics is needed. For this review, 74 articles were selected and analyzed for the misconceptions, research tools, teaching strategies and multimedia applications investigated. Outcomes were categorized according to their contribution to the various subtopics of quantum mechanics. Analysis shows that students have difficulty relating quantum physics to physical reality. It also shows that the teaching of complex quantum behavior, such as time dependence, superposition and the measurement problem, has barely been investigated for the secondary and lower undergraduate level. At the secondary school level, this review shows a need to investigate student difficulties concerning wave functions and potential wells. Investigation of research tools shows the necessity for the development of assessment tools for secondary and lower undergraduate education, which cover all major topics and are suitable for statistical analysis. Furthermore, this review shows the existence of very diverse ideas concerning teaching strategies for quantum mechanics and a lack of research into which strategies promote understanding. This review underlines the need for more empirical research into student difficulties, teaching strategies, activities and research tools intended for a conceptual approach for quantum mechanics.
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Submitted 17 February, 2017; v1 submitted 5 January, 2017;
originally announced January 2017.
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Gate-tunable band structure of the LaAlO$_3$-SrTiO$_3$ interface
Authors:
A. E. M. Smink,
J. C. de Boer,
M. P. Stehno,
A. Brinkman,
W. G. van der Wiel,
H. Hilgenkamp
Abstract:
The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observ…
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The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of $2.9\times10^{13}$ cm$^{-2}$. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex oxide interfaces.
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Submitted 7 October, 2016;
originally announced October 2016.
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Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films
Authors:
Prosper Ngabonziza,
Martin P. Stehno,
Hiroaki Myoren,
Viola A. Neumann,
Gertjan Koster,
Alexander Brinkman
Abstract:
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective cap**, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ thin films. Using a back-gate, the carrier density is tuned by a factor of $\sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of…
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Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective cap**, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ thin films. Using a back-gate, the carrier density is tuned by a factor of $\sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of $\sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of cap** layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.
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Submitted 13 April, 2016;
originally announced April 2016.
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Andreev reflection in s-type superconductor proximized 3D topological insulator
Authors:
E. S. Tikhonov,
D. V. Shovkun,
V. S. Khrapai,
M. Snelder,
M. P. Stehno,
A. Brinkman,
Y. Huang,
M. S. Golden,
A. A. Golubov
Abstract:
We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{\rm N}\approx1/3$ in magnetic field and in referen…
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We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{\rm N}\approx1/3$ in magnetic field and in reference normal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor $F_{\rm AR}\approx0.22\pm0.02$ is considerably reduced in the AR regime compared to $F_{\rm N}$, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.
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Submitted 29 August, 2016; v1 submitted 1 April, 2016;
originally announced April 2016.
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Conductance spectroscopy of a proximity induced superconducting topological insulator
Authors:
M. Snelder,
M. P. Stehno,
A. A. Golubov,
C. G. Molenaar,
T. Scholten,
D. Wu,
Y. K. Huang,
W. G. van der Wiel,
M. S. Golden,
A. Brinkman
Abstract:
We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting…
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We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN' (S is a superconductor, N a superconducting proximized material and N' is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI.
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Submitted 19 June, 2015;
originally announced June 2015.
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Observability of surface Andreev bound states in a topological insulator in proximity to an s-wave superconductor
Authors:
M. Snelder,
A. A. Golubov,
Y. Asano,
A. Brinkman
Abstract:
To guide experimental work on the search for Majorana zero-energy modes, we calculate the superconducting pairing symmetry of a three-dimensional topological insulator in combination with an s-wave superconductor. In analogy to the case of nanowires with strong spin-orbit coupling we show how the pairing symmetry changes across different topological regimes. We demonstrate that a dominant p-wave p…
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To guide experimental work on the search for Majorana zero-energy modes, we calculate the superconducting pairing symmetry of a three-dimensional topological insulator in combination with an s-wave superconductor. In analogy to the case of nanowires with strong spin-orbit coupling we show how the pairing symmetry changes across different topological regimes. We demonstrate that a dominant p-wave pairing relation is not sufficient to realize a Majorana zero-energy mode useful for quantum computation. Our main result of this paper is the relation between odd-frequency pairing and Majorana zero energy modes by using Green functions techniques in three-dimensional topological insulators in the so-called Majorana regime. We discuss thereafter how the pairing relations in the different regimes can be observed in the shape of the tunneling conductance of an s-wave proximized three-dimensional topological insulator. We will discuss the necessity to incorporate a ferromagnetic insulator to localize the zero-energy bound state to the interface as a Majorana mode.
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Submitted 18 June, 2015; v1 submitted 20 March, 2015;
originally announced March 2015.
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In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects
Authors:
P. Ngabonziza,
R. Heimbuch,
N. de Jong,
R. A. Klaassen,
M. P. Stehno,
M. Snelder,
A. Solmaz,
S. V. Ramankutty,
E. Frantzeskakis,
E. van Heumen,
G. Koster,
M. S. Golden,
H. J. W. Zandvliet,
A. Brinkman
Abstract:
Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achiev…
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Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counter do**. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in-vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.
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Submitted 26 May, 2015; v1 submitted 4 February, 2015;
originally announced February 2015.
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Magnetoresistance from broken spin helicity
Authors:
D. P. Leusink,
R. G. J. Smits,
P. Ngabonziza,
X. L. Wang,
S. Wiedmann,
U. Zeitler,
A. Brinkman
Abstract:
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also be a powerful probe of electronic and magnetic interactions in matter. For example, magnetoresistance can be used to analyze multiband conductivity, conduction…
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The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also be a powerful probe of electronic and magnetic interactions in matter. For example, magnetoresistance can be used to analyze multiband conductivity, conduction inhomogeneity, localized magnetic moments, and (fractional) Landau level structure. For materials with strong spin-orbit interaction, magnetoresistance can be used as a probe for weak antilocalization or a nontrivial Berry phase, such as in topological insulator surface states. For the three dimensional topological insulators a large and linear magnetoresistance is often used as indication for underlying non-trivial topology, although the origin of this effect has not yet been established. Here, we observe a large magnetoresistance in the conducting bulk state of Bi$_2$Te$_3$. We show that this type of large magnetoresistance is due to the competition between helical spin-momentum locking (i.e. spin rotates with momentum direction) and the unidirectional spin alignment by an applied magnetic field. War** effects are found to provide the (quasi) linear dependence on magnetic field. We provide a quantitative model for the helicity breaking induced magnetoresistance that can be applied to a vast range of materials, surfaces or interfaces with weak to strong spin-orbit interactions, such as the contemporary oxide interfaces, bulk Rashba systems, and topological insulator surface states.
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Submitted 12 December, 2014;
originally announced December 2014.
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Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study
Authors:
Y. Pan,
D. Wu,
J. R. Angevaare,
H. Luigjes,
E. Frantzeskakis,
N. de Jong,
E. van Heumen,
T. V. Bay,
B. Zwartsenberg,
Y. K. Huang,
M. Snelder,
A. Brinkman,
M. S. Golden,
A. de Visser
Abstract:
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthe…
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In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$ single crystals with compositions around $x = 0.5$ and $y = 1.3$. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to $1 μ$m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $α\simeq -1$ as expected for transport dominated by topological surface states.
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Submitted 7 May, 2015; v1 submitted 10 November, 2014;
originally announced November 2014.
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Critical behavior at the dynamic Mott transition
Authors:
Nicola Poccia,
Tatyana I. Baturina,
Francesco Coneri,
Cor G. Molenaar,
X. Renshaw Wang,
Ginestra Bianconi,
Alexander Brinkman,
Hans Hilgenkamp,
Alexander A. Golubov,
Valerii M. Vinokur
Abstract:
We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott insulator where magnetic field-induced vortices are frozen in the dimples of the egg crate potential by their strong repulsion interaction is discovered. We find an in…
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We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott insulator where magnetic field-induced vortices are frozen in the dimples of the egg crate potential by their strong repulsion interaction is discovered. We find an insulator-to-metal transition driven by the applied electric current and determine critical exponents that exhibit striking similarity with the common thermodynamic liquid-gas transition. A simple and straightforward quantum mechanical picture is proposed that describes both tunneling dynamics in the deep insulating state and the observed scaling behavior in the vicinity of the critical point. Our findings offer a comprehensive description of dynamic Mott critical behavior and establish a deep connection between equilibrium and nonequilibrium phase transitions.
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Submitted 28 August, 2014; v1 submitted 23 August, 2014;
originally announced August 2014.
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Geometric dependence of Nb-Bi${_2}$Te${_3}$-Nb topological Josephson junction transport parameters
Authors:
C. G. Molenaar,
D. P. Leusink,
X. L. Wang,
A. Brinkman
Abstract:
Superconductor-topological insulator-superconductor Josephson junctions have been fabricated in order to study the width dependence of the critical current, normal state resistance and flux periodicity of the critical current modulation in an external field. Previous literature reports suggest anomalous scaling in topological junctions due to the presence of Majorana bound states. However, for mos…
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Superconductor-topological insulator-superconductor Josephson junctions have been fabricated in order to study the width dependence of the critical current, normal state resistance and flux periodicity of the critical current modulation in an external field. Previous literature reports suggest anomalous scaling in topological junctions due to the presence of Majorana bound states. However, for most realised devices, one would expect that trivial $2π$-periodic Andreev levels dominate transport. We also observe anomalous scaling behaviour of junction parameters, but the scaling can be well explained by mere geometric effects, such as the parallel bulk conductivity shunt and flux focusing.
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Submitted 5 August, 2014;
originally announced August 2014.
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Transport and thermoelectric properties of the LaAlO$_3$/SrTiO$_3$ interface
Authors:
A. Jost,
V. K. Guduru,
S. Wiedmann,
J. C. Maan,
U. Zeitler,
S. Wenderich,
A. Brinkman,
H. Hilgenkamp
Abstract:
The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the…
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The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a non-degenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering.
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Submitted 30 March, 2015; v1 submitted 28 July, 2014;
originally announced July 2014.
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Nonlocal Andreev reflection, fractional charge and current-phase relation in topological bilayer exciton condensate junctions
Authors:
M. Veldhorst,
M. Hoek,
M. Snelder,
H. Hilgenkamp,
A. A. Golubov,
A. Brinkman
Abstract:
We study Andreev reflection and Josephson currents in topological bilayer exciton condensates (TEC). These systems can create 100% spin entangled nonlocal currents with high amplitudes due to perfect nonlocal Andreev reflection. This Andreev reflection process can be gate tuned from a regime of purely retro reflection to purely specular reflection. We have studied the bound states in TEC-TI-TEC Jo…
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We study Andreev reflection and Josephson currents in topological bilayer exciton condensates (TEC). These systems can create 100% spin entangled nonlocal currents with high amplitudes due to perfect nonlocal Andreev reflection. This Andreev reflection process can be gate tuned from a regime of purely retro reflection to purely specular reflection. We have studied the bound states in TEC-TI-TEC Josephson junctions and find a gapless dispersion for perpendicular incidence. The presence of a sharp transition in the supercurrent-phase relationship when the system is in equilibrium is a signature of fractional charge, which can be further revealed in ac measurements faster than relaxation processes via Landau-Zener processes.
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Submitted 8 July, 2014;
originally announced July 2014.
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Josephson supercurrent in a topological insulator without a bulk shunt
Authors:
M. Snelder,
C. G. Molenaar,
Y. Pan,
D. Wu,
Y. K. Huang,
A. de Visser,
A. A. Golubov,
W. G. van der Wiel,
H. Hilgenkamp,
M. S. Golden,
A. Brinkman
Abstract:
A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40…
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A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40 nm and lengths in the order of 50 to 80 nm on several Bi1.5Sb0.5Te1.7Se1.3 flakes and measured down to 30 mK. The Fraunhofer patterns unequivocally reveal that the supercurrent is a Josephson supercurrent. The measured critical currents are reproducibly observed on different devices and upon multiple cooldowns, and the critical current dependence on temperature as well as magnetic field can be well explained by diffusive transport models and geometric effects.
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Submitted 30 June, 2014;
originally announced June 2014.