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Frequency-dependent photothermal measurement of thermal diffusivity for opaque and non-opaque materials; Application to crystals of TIPS-pentacene
Authors:
Maryam Shahi,
J. W. Brill
Abstract:
We propose the use of a frequency-dependent photothermal measurement as a complement to light-flash, i.e. time-dependent, measurements to determine the through-plane thermal diffusivity of small, thin samples, e.g. semiconducting polymers and small organic molecule crystals. The analysis is extended from its previous use with some opaque conducting polymers to materials with finite absorption coef…
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We propose the use of a frequency-dependent photothermal measurement as a complement to light-flash, i.e. time-dependent, measurements to determine the through-plane thermal diffusivity of small, thin samples, e.g. semiconducting polymers and small organic molecule crystals. The analysis is extended from its previous use with some opaque conducting polymers to materials with finite absorption coefficients, such as crystals of 6,13-bis(triisopropylsilylethynyl pentacene ("TIPS-pentacene"). Taking into account the finite absorption coefficients of the latter gives a value of diffusivity, D=0.10 mm2/s, much smaller than previously estimated and more consistent with its expected value. We also briefly discuss the effects of coating samples for the measurement to improve their optical properties.
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Submitted 17 October, 2018;
originally announced October 2018.
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Electronic and optical properties of La-doped Sr$_3$Ir$_2$O$_7$ epitaxial thin-films
Authors:
M. Souri,
J. Terzic,
J. M. Johnson,
J. G. Connell,
J. H. Gruenewald,
J. Thompson,
J. W. Brill,
J. Hwang,
G. Cao,
A. Seo
Abstract:
We have investigated structural, transport, and optical properties of tensile strained (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ (x = 0, 0.025, 0.05) epitaxial thin-films. While High-T$_c$ superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hop** characteristics in transport. Cross…
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We have investigated structural, transport, and optical properties of tensile strained (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ (x = 0, 0.025, 0.05) epitaxial thin-films. While High-T$_c$ superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hop** characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr$_3$Ir$_2$O$_7$ thin-films is presumably due to disorder-induced localization and ineffective electron-do** of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.
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Submitted 8 February, 2018;
originally announced February 2018.
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Optical Signatures of Spin-Orbit Exciton in Bandwidth Controlled Sr$_2$IrO$_4$ Epitaxial Films via High-Concentration Ca and Ba Do**
Authors:
M. Souri,
B. H. Kim,
J. H. Gruenewald,
J. G. Connell,
J. Thompson,
J. Nichols,
J. Terzic,
B. I. Min,
G. Cao,
J. W. Brill,
A. Seo
Abstract:
We have investigated the electronic and optical properties of (Sr$_{1-x}$Ca$_{x}$)$_2$IrO$_4$ (x= 0 - 0.375) and (Sr$_{1-y}$Ba$_y$)$_2$IrO$_4$ (y= 0 - 0.375) epitaxial thin-films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the J$_{eff}$= 1/2 spi…
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We have investigated the electronic and optical properties of (Sr$_{1-x}$Ca$_{x}$)$_2$IrO$_4$ (x= 0 - 0.375) and (Sr$_{1-y}$Ba$_y$)$_2$IrO$_4$ (y= 0 - 0.375) epitaxial thin-films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the J$_{eff}$= 1/2 spin-orbit Mott insulator Sr$_2$IrO$_4$. As the average A-site ionic radius increases from (Sr$_{1-x}$Ca$_{x}$)$_2$IrO$_4$ to (Sr$_{1-y}$Ba$_y$)$_2$IrO$_4$, optical conductivity spectra in the near-infrared region shift to lower energies, which cannot be explained by the simple picture of well-separated J$_{eff}$= 1/2 and J$_{eff}$= 3/2 bands. We suggest that the two-peak-like optical conductivity spectra of the layered iridates originates from the overlap between the optically-forbidden spin-orbit exciton and the inter-site optical transitions within the J$_{eff}$= 1/2 band. Our experimental results are consistent with this interpretation as implemented by a multi-orbital Hubbard model calculation: namely, incorporating a strong Fano-like coupling between the spin-orbit exciton and inter-site d-d transitions within the J$_{eff}$= 1/2 band.
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Submitted 12 June, 2017;
originally announced June 2017.
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Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials
Authors:
J. H. Gruenewald,
J. Kim,
H. S. Kim,
J. M. Johnson,
J. Hwang,
M. Souri,
J. Terzic,
S. H. Chang,
A. Said,
J. W. Brill,
G. Cao,
H. -Y. Kee,
S. S. A. Seo
Abstract:
One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mot…
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One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mott insulator Sr2IrO4 and a wide bandgap insulator LaSrGaO4, both of which are crystals with layered structure. In addition to the successful formation of 1D Ir-stripe structure, we have observed 1D quantum-confined electronic states from optical spectroscopy and resonant inelastic x-ray scattering. Since this 1D superlattice approach can be applied to a wide range of layered materials, it opens a new era of 1D science.
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Submitted 24 October, 2016;
originally announced October 2016.
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Thermal Resistances of Thin-Films of Small Molecule Organic Semiconductors
Authors:
Y. Yao,
Maryam Shahi,
Marcia M. Payne,
J. E. Anthony,
J. W. Brill
Abstract:
We have measured the thermal resistances of thin films of the small molecule organic semiconductors bis(triisopropylsilylethynyl) pentacene (TIPS-pn), bis(triethylsilylethynyl) anthradithiophene (TES-ADT) and difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TES-ADT). For each material, several films of different thicknesses have been measured to separate the effects of intrinsic thermal c…
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We have measured the thermal resistances of thin films of the small molecule organic semiconductors bis(triisopropylsilylethynyl) pentacene (TIPS-pn), bis(triethylsilylethynyl) anthradithiophene (TES-ADT) and difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TES-ADT). For each material, several films of different thicknesses have been measured to separate the effects of intrinsic thermal conductivity from interface thermal resistance. For non-crystalline films of all three materials, with thicknesses ranging from < 100 nm to > 4 microns, the thermal conductivities are similar to that of polymers and over an order of magnitude smaller than that of the crystals, reflecting the large reduction in phonon mean-free path in the films. Thin (< 205 nm) crystalline films of TES-ADT, prepared by vapor-annealing spin-cast films, have also been measured, but for these the thermal resistances are dominated by interface scattering.
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Submitted 2 September, 2016; v1 submitted 6 July, 2016;
originally announced July 2016.
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Investigations of metastable Ca2IrO4 epitaxial thin-films: systematic comparison with Sr2IrO4 and Ba2IrO4
Authors:
M. Souri,
J. H. Gruenewald,
J. Terzic,
J. W. Brill,
G. Cao,
S. S. A. Seo
Abstract:
We have synthesized thermodynamically metastable Ca2IrO4 thin-films on YAlO3 (110) substrates by pulsed laser deposition. The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragonal structure. Transport and optical spectroscopy measurements indicate that the electronic structure of the Ca2IrO4 thin-films is similar to that of Jeff = 1/2 spin-orbit-coupled Mott insulator Sr2IrO4 and Ba2IrO4, wit…
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We have synthesized thermodynamically metastable Ca2IrO4 thin-films on YAlO3 (110) substrates by pulsed laser deposition. The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragonal structure. Transport and optical spectroscopy measurements indicate that the electronic structure of the Ca2IrO4 thin-films is similar to that of Jeff = 1/2 spin-orbit-coupled Mott insulator Sr2IrO4 and Ba2IrO4, with the exception of an increased gap energy. The gap increase is to be expected in Ca2IrO4 due to its increased octahedral rotation and tilting, which results in enhanced electron-correlation, U/W. Our results suggest that the epitaxial stabilization growth of metastable-phase thin-films can be used effectively for investigating layered iridates and various complex-oxide systems.
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Submitted 19 May, 2016;
originally announced May 2016.
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Frequency-Dependent Photothermal Measurement of Transverse Thermal Diffusivity of Organic Semiconductors
Authors:
J. W. Brill,
Maryam Shahi,
Marcia M. Payne,
Jesper Edberg,
Y. Yao,
Xavier Crispin,
J. E. Anthony
Abstract:
We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chop** frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled infrared detector. In our system, the sample is placed directly in front of the detector within its dewar. Because the detector is also sensitive to some of the i…
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We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chop** frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled infrared detector. In our system, the sample is placed directly in front of the detector within its dewar. Because the detector is also sensitive to some of the incident light which leaks around or through the sample, measurements are made for the detector signal that is in quadrature with the chopped light. Results are presented for layered crystals of semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pn) and for papers of cellulose nanofibrils coated with semiconducting poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (NFC-PEDOT). For NFC-PEDOT, we have found that the transverse diffusivity, smaller than the in-plane value, varies inversely with thickness, suggesting that texturing of the papers varies with thickness. For TIPS-pn, we have found that the interlayer diffusivity is an order of magnitude larger than the in-plane value, consistent with previous estimates, suggesting that low-frequency optical phonons, presumably associated with librations in the TIPS side-groups, carry most of the heat.
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Submitted 30 November, 2015; v1 submitted 13 August, 2015;
originally announced August 2015.
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Compressive strain-induced metal-insulator transition in orthorhombic SrIrO3 thin films
Authors:
J. H. Gruenewald,
J. Nichols,
J. Terzic,
G. Cao,
J. W. Brill,
S. S. A. Seo
Abstract:
We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (\r{ho}) of the thin films increases by a few orders of magnitude, and th…
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We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (\r{ho}) of the thin films increases by a few orders of magnitude, and the d\r{ho}/dT changes from positive to negative values. However, optical absorption spectra show Drude-like, metallic responses without an optical gap opening for all compressively-strained thin films. Transport measurements under magnetic fields show negative magneto-resistance at low temperature for compressively-strained thin-films. Our results suggest that weak localization is responsible for the strain-induced metal-insulator transition for the orthorhombic SrIrO3 thin-films.
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Submitted 25 June, 2014;
originally announced June 2014.
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Thermal Diffusivities of Functionalized Pentacene Semiconductors
Authors:
H. Zhang,
Y. Yao,
Marcia M. payne,
Karl J. Thorley,
J. E. Anthony,
J. W. Brill
Abstract:
We have measured the interlayer and in-plane (needle axis) thermal diffusivities of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn). The needle axis value is comparable to the phonon thermal conductivities of quasi-one dimensional organic metals with excellent pi-orbital overlap, and its value suggests that a significant fraction of heat is carried by optical phonons. Furthermore, the inter…
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We have measured the interlayer and in-plane (needle axis) thermal diffusivities of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn). The needle axis value is comparable to the phonon thermal conductivities of quasi-one dimensional organic metals with excellent pi-orbital overlap, and its value suggests that a significant fraction of heat is carried by optical phonons. Furthermore, the interlayer (c-axis) thermal diffusivity is at least an order of magnitude larger, and this unusual anisotropy implies very strong dispersion of optical modes in the interlayer direction, presumably due to interactions between the silyl-containing side groups. Similar values for both in-plane and interlayer diffusivities have been observed for several other functionalized pentacene semiconductors with related structures.
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Submitted 14 August, 2014; v1 submitted 4 June, 2014;
originally announced June 2014.
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arXiv:1402.6591
[pdf]
cond-mat.str-el
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.supr-con
Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition
Authors:
J. Nichols,
O. B. Korneta,
J. Terzic,
G. Cao,
J. W. Brill,
S. S. A. Seo
Abstract:
We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2Ir…
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We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.
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Submitted 26 February, 2014;
originally announced February 2014.
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Anisotropic electronic properties of a-axis-oriented Sr2IrO4 epitaxial thin-films
Authors:
J. Nichols,
O. B. Korneta,
J. Terzic,
L. E. De Long,
G. Cao,
J. W. Brill,
S. S. A. Seo
Abstract:
We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that of the ab-plane. Optical absorption spectra with E//b polarization show both Ir 5d intersite transitions and charge-transfer transitions (O 2p to Ir 5d), while E…
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We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that of the ab-plane. Optical absorption spectra with E//b polarization show both Ir 5d intersite transitions and charge-transfer transitions (O 2p to Ir 5d), while E//c spectra show only the latter. The structural anisotropy created by biaxial strain in a-axis-oriented thin-films also changes the electronic structure and gap energy. These a-axis-oriented, epitaxial thin-films provide a powerful tool to investigate the highly anisotropic electronic properties of Sr2IrO4.
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Submitted 6 September, 2013; v1 submitted 19 August, 2013;
originally announced August 2013.
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Interlayer Thermal Conductivity of Rubrene Measured by ac-Calorimetry
Authors:
H. Zhang,
J. W. Brill
Abstract:
We have measured the interlayer thermal conductivity of crystals of the organic semiconductor rubrene, using ac-calorimetry. Since ac-calorimetry is most commonly used for measurements of the heat capacity, we include a discussion of its extension for measurements of the transverse thermal conductivity of thin crystals of poor thermal conductors, including the limitations of the technique. For rub…
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We have measured the interlayer thermal conductivity of crystals of the organic semiconductor rubrene, using ac-calorimetry. Since ac-calorimetry is most commonly used for measurements of the heat capacity, we include a discussion of its extension for measurements of the transverse thermal conductivity of thin crystals of poor thermal conductors, including the limitations of the technique. For rubrene, we find that the interlayer thermal conductivity, 0.7 mW/cm K, is several times smaller than the (previously measured) in-layer value, but its temperature dependence indicates that the interlayer mean free path is at least a few layers.
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Submitted 8 July, 2013; v1 submitted 26 April, 2013;
originally announced April 2013.
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Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films
Authors:
J. Nichols,
J. Terzic,
E. G. Bittle,
O. B. Korneta,
L. E. De Long,
J. W. Brill,
G. Cao,
S. S. A. Seo
Abstract:
We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to hig…
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We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strains, indicating that the electronic-correlation energy is also affected by in-plane lattice-strains. The effective tuning of electronic structures under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.
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Submitted 30 March, 2013; v1 submitted 4 February, 2013;
originally announced February 2013.
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Dynamic Infrared Electro-Optic Response of Soluble Organic Semiconductors in Thin Film Transistors
Authors:
Emily G. Bittle,
Joseph W. Brill,
Joseph P. Straley
Abstract:
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate, bottom contact field-effect transistors (FETs.) Because of the buried metal layer effect the maximum response, due to absorption in the charge layer, will be for…
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We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate, bottom contact field-effect transistors (FETs.) Because of the buried metal layer effect the maximum response, due to absorption in the charge layer, will be for a dielectric film ~ 1/4 of a wavelength (in the dielectric) (e.g. ~ 1 micron thick in the infrared.) Results are presented for FETs prepared with both spin-cast polymer and alumina dielectrics prepared by atomic layer deposition. At low frequencies the results are fit to solutions to a non-linear differential equation describing the spatial dependence of flowing charge in the FET channel, which allows us to study multiple crystals forming across one set of drain-source contacts. FETs prepared on alumina dielectrics show interesting deviations from the model at high frequencies, possibly due to increased contact impedance.
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Submitted 19 December, 2012;
originally announced December 2012.
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Dynamics of Charge Flow in the Channel of a Thin-Film Field-Effect Transistor
Authors:
E. G. Bittle,
J. W. Brill,
J. P. Straley
Abstract:
The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of "zero applied current": zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming const…
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The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of "zero applied current": zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.
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Submitted 24 September, 2012; v1 submitted 1 May, 2012;
originally announced May 2012.
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Torque and temperature dependence of the hysteretic voltage-induced torsional strain in tantalum trisulfide
Authors:
H. Zhang,
J. Nichols,
J. W. Brill
Abstract:
We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in crystals of orthorhombic tantalum trisulfide on temperature and applied torque. In particular, applying square-wave voltages above the charge-density-wave (CDW) threshold voltage, so as to abruptly switch the strain across its hysteresis loop, we have found that the time constant for the VITS to switch (at…
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We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in crystals of orthorhombic tantalum trisulfide on temperature and applied torque. In particular, applying square-wave voltages above the charge-density-wave (CDW) threshold voltage, so as to abruptly switch the strain across its hysteresis loop, we have found that the time constant for the VITS to switch (at different temperatures and voltages) varied as the CDW current. Application of torque to the crystal could also change the VITS time constant, magnitude, and sign, suggesting that the VITS is a consequence of residual torsional strain in the sample which twist the CDW. Application of voltage changes the pitch of these CDW twists, which then act back on the lattice. However, it remains difficult to understand the sluggishness of the response.
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Submitted 9 September, 2011; v1 submitted 12 July, 2011;
originally announced July 2011.
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Electro-optic measurement of carrier mobility in an organic thin-film transistor
Authors:
E. G. Bittle,
J. W. Brill,
J. E. Anthony
Abstract:
We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surfac…
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We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore determine their mobility.
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Submitted 15 June, 2010; v1 submitted 29 April, 2010;
originally announced April 2010.
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Dynamics of the hysteretic voltage-induced torsional strain in tantalum trisulfide
Authors:
J. Nichols,
C. Sandamali Weerasooriya,
J. W. Brill
Abstract:
We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated re…
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We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 seconds. The square-wave response shows that the dynamic response to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects.
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Submitted 7 January, 2010; v1 submitted 30 October, 2009;
originally announced October 2009.
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Characterization of the Torsional Piezoelectric-like Response of Tantalum Trisulfide Associated with Charge-Density-Wave Depinning
Authors:
J. Nichols,
D. Dominko,
L. Ladino,
J. Zhou,
J. W. Brill
Abstract:
We have studied the frequency and voltage dependence of voltage-induced torsional strains in orthorhombic TaS3 [V. Ya. Pokrovskii, et al, Phys. Rev. Lett. 98, 206404 (2007)] by measuring the modulation of the resonant frequency of an RF cavity containing the sample. The strain has an onset voltage below the charge-density-wave (CDW) threshold voltages associated with changes in shear compliance…
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We have studied the frequency and voltage dependence of voltage-induced torsional strains in orthorhombic TaS3 [V. Ya. Pokrovskii, et al, Phys. Rev. Lett. 98, 206404 (2007)] by measuring the modulation of the resonant frequency of an RF cavity containing the sample. The strain has an onset voltage below the charge-density-wave (CDW) threshold voltages associated with changes in shear compliance and resistance, suggesting that the strain is associated with polarization of the CDW rather than CDW current. Measurements with square-wave voltages show that the strain is very sluggish, not even reaching its dc value at a frequency of 0.1 Hz, but the dynamics appear to be very sample dependent. By applying oscillating torque while biasing the sample with a dc current, we have also looked for strain induced voltage in the sample; none is observed at the low biases where the voltage-induced strains first occur, but an induced voltage is observed at higher biases, probably associated with strain-dependent CDW conductance.
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Submitted 17 June, 2009; v1 submitted 14 May, 2009;
originally announced May 2009.
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Phase transitions in LaFeAsO: structural, magnetic, elastic, and transport properties, heat capacity and Mossbauer spectra
Authors:
Michael A. McGuire,
Andrew D. Christianson,
Athena S. Sefat,
Brian C. Sales,
Mark D. Lumsden,
Rongying **,
E. Andrew Payzant,
David Mandrus,
Yanbing Luan,
Veerle Keppens,
Vijayalaksmi Varadarajan,
Joseph W. Brill,
Raphael P. Hermann,
Moulay T. Sougrati,
Fernande Grandjean,
Gary J. Long
Abstract:
We present results from a detailed experimental investigation of LaFeAsO, the parent material in the series of "FeAs" based oxypnictide superconductors. Upon cooling this material undergoes a tetragonal-orthorhombic crystallographic phase transition at ~160 K followed closely by an antiferromagnetic ordering near 145 K. Analysis of these phase transitions using temperature dependent powder X-ray…
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We present results from a detailed experimental investigation of LaFeAsO, the parent material in the series of "FeAs" based oxypnictide superconductors. Upon cooling this material undergoes a tetragonal-orthorhombic crystallographic phase transition at ~160 K followed closely by an antiferromagnetic ordering near 145 K. Analysis of these phase transitions using temperature dependent powder X-ray and neutron diffraction measurements is presented. A magnetic moment of ~0.35 Bohr magnetons per iron is derived from Mossbauer spectra in the low temperature phase. Evidence of the structural transition is observed at temperatures well above the structural transition (up to near 200 K) in the diffraction data as well as the polycrystalline elastic moduli probed by resonant ultrasound spectroscopy measurements. The effects of the two phase transitions on the transport properties (resistivity, thermal conductivity, Seebeck coefficient, Hall coefficient), heat capacity, and magnetization of LaFeAsO are also reported, including a dramatic increase in the magnitude of the Hall coefficient below 160 K. The results suggest that the structural distortion leads to a localization of carriers on Fe, producing small local magnetic moments which subsequently order antiferromagnetically upon further cooling. Evidence of strong electron-phonon interactions in the high-temperature tetragonal phase is also observed.
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Submitted 21 August, 2008; v1 submitted 23 June, 2008;
originally announced June 2008.
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Frequency Domain Simulations of Charge-Density-Wave Strains: Comparison with Electro-Optic Measurements
Authors:
L. Ladino,
J. W. Brill
Abstract:
We have studied changes in charge-density-wave strain under application of square-wave currents of variable amplitude and frequency by numerically solving the phase-slip augmented diffusion model introduced by Adelman et al (Phys. Rev. B 53, 1833 (1996)). The frequency dependence of the strain, at each position and amplitude, was fit to a modified harmonic oscillator expression, and the position…
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We have studied changes in charge-density-wave strain under application of square-wave currents of variable amplitude and frequency by numerically solving the phase-slip augmented diffusion model introduced by Adelman et al (Phys. Rev. B 53, 1833 (1996)). The frequency dependence of the strain, at each position and amplitude, was fit to a modified harmonic oscillator expression, and the position and current dependence of the fitting parameters determined. In particular, the delay time (1/resonant frequency) vanishes adjacent to the contact and grows with distance from the contact, and both the delay time and relaxation time decrease rapidly with increasing current (and phase-slip rate), as experimentally observed in the electro-optic response of blue bronze. We have also found that pinning the phase at the contacts causes more rapid changes in strain between the contacts than allowing the phase to flow outside the contacts.
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Submitted 10 December, 2007;
originally announced December 2007.
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Electro-Optic Search for Critical Divergence of the Charge-Density-Wave Diffusion Constant at the Onset of Depinning
Authors:
L. Ladino,
E. G. Bittle,
M. Uddin,
J. W. Brill
Abstract:
We have used electro-reflectance measurements to study charge-density-wave (CDW) polarization dynamics at voltages near the CDW depinning onset (Von) in the quasi-one-dimensional conductor K0.3MoO3 ("blue bronze"). For low voltages, where the phase-slip rate is low, it is expected that the polarization relaxation time should be inversely proportional to the CDW diffusion constant, which is expec…
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We have used electro-reflectance measurements to study charge-density-wave (CDW) polarization dynamics at voltages near the CDW depinning onset (Von) in the quasi-one-dimensional conductor K0.3MoO3 ("blue bronze"). For low voltages, where the phase-slip rate is low, it is expected that the polarization relaxation time should be inversely proportional to the CDW diffusion constant, which is expected to diverge at Von. At T=78 K, we observe saturation of the relaxation time at low voltages, suggesting that we are in the low phase-slip limit and allowing us to estimate the non-critical value of the CDW diffusion constant D=0.02cm2/s, consistent with the measured phason velocity. At other temperatures, the relaxation time increases with decreasing volage even at the lowest voltages we could measure. In no case do we observe the expected "critical speeding up", setting an upper limit on the critical region of (V/Von -1)crit < 0.06.
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Submitted 9 September, 2007; v1 submitted 25 July, 2007;
originally announced July 2007.
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Charge Order Superstructure with Integer Iron Valence in Fe2OBO3
Authors:
M. Angst,
P. Khalifah,
R. P. Hermann,
H. J. Xiang,
M. -H. Whangbo,
V. Varadarajan,
J. W. Brill,
B. C. Sales,
D. Mandrus
Abstract:
Solution-grown single crystals of Fe2OBO3 were characterized by specific heat, Mossbauer spectroscopy, and x-ray diffraction. A peak in the specific heat at 340 K indicates the onset of charge order. Evidence for a doubling of the unit cell at low temperature is presented. Combining structural refinement of diffraction data and Mossbauer spectra, domains with diagonal charge order are establishe…
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Solution-grown single crystals of Fe2OBO3 were characterized by specific heat, Mossbauer spectroscopy, and x-ray diffraction. A peak in the specific heat at 340 K indicates the onset of charge order. Evidence for a doubling of the unit cell at low temperature is presented. Combining structural refinement of diffraction data and Mossbauer spectra, domains with diagonal charge order are established. Bond-valence-sum analysis indicates integer valence states of the Fe ions in the charge ordered phase, suggesting Fe2OBO3 is the clearest example of ionic charge order so far.
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Submitted 18 July, 2007;
originally announced July 2007.
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Anomalous itinerant magnetism in single crystal Sr4Ru3O10: A thermodynamic and transport investigation
Authors:
G. Cao,
S. Chikara,
J. W. Brill,
Schlottmann
Abstract:
A thermodynamic and transport study of Sr4Ru3O10 as a function of temperature and magnetic field is presented. The central results include a growing specific heat C with increasing field B, a magnetic contribution to C/T at low temperatures proportional to -log(T), an abrupt jump and a peak in C/T at 2.90 T and 7 T for B||ab-plane and B||c-axis, respectively, and corresponding changes in the low…
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A thermodynamic and transport study of Sr4Ru3O10 as a function of temperature and magnetic field is presented. The central results include a growing specific heat C with increasing field B, a magnetic contribution to C/T at low temperatures proportional to -log(T), an abrupt jump and a peak in C/T at 2.90 T and 7 T for B||ab-plane and B||c-axis, respectively, and corresponding changes in the low T power laws of the resistivity. The novelty of this work lies in the fact that this system is strongly anisotropic displaying spontaneous ferromagnetism along the c-axis and an intralayer metamagnetic transition with a possibility of a nearby quantum critical point. The exotic behavior reflects new physics that is yet to be understood.
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Submitted 14 March, 2007;
originally announced March 2007.
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Specific Heat of (Ca1-xSrx)3Ru2O7 Single Crystals
Authors:
V. Varadarajan,
S. Chikara,
V. Durairaj,
X. N. Lin,
G. Cao,
J. W. Brill
Abstract:
We have measured the specific heat of crystals of (Ca1-xSrx)3Ru2O7 using ac- and relaxation-time calorimetry. Special emphasis was placed on the characterization of the Neel (TN=56 K) and structural (Tc = 48 K) phase transitions in the pure, x=0 material. While the latter is believed to be first order, detailed measurements under different experimental conditions suggest that all the latent heat…
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We have measured the specific heat of crystals of (Ca1-xSrx)3Ru2O7 using ac- and relaxation-time calorimetry. Special emphasis was placed on the characterization of the Neel (TN=56 K) and structural (Tc = 48 K) phase transitions in the pure, x=0 material. While the latter is believed to be first order, detailed measurements under different experimental conditions suggest that all the latent heat (with L ~ 0.3 R) is being captured in a broadened peak in the effective heat capacity. The specific heat has a mean-field-like step at TN, but its magntitude (Delta cP ~ R) is too large to be associated with a conventional itinerant electron (e.g. spin-density-wave) antiferromagnetic transition, while its entropy is too small to be associated with full ordering of localized spins. The TN transition broadens with Sr substitution while its magnitude decreases slowly. On the other hand, the entropy change associated with the Tc transition decreases rapidly with Sr substitution and is not observable for our x=0.58 sample.
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Submitted 9 November, 2006;
originally announced November 2006.
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Possible quantum criticality and coexistence of spontaneous ferromagnetism and field-induced metamagnetism in triple-layered Sr4Ru3O10
Authors:
G. Cao,
S. Chikara,
J. W. Brill,
P. Schlottmann
Abstract:
A thermodynamic and transport study of Sr4Ru3O10 as a function of temperature and magnetic field are presented. The central results include a growing specific heat C with increasing field B, a divergent magnetic contribution to C/T at low temperatures, an abrupt jump and a peak in C/T at 2.90 T and 7 T for B||ab-plane and B||c-axis, respectively, and corresponding changes in the low T power laws…
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A thermodynamic and transport study of Sr4Ru3O10 as a function of temperature and magnetic field are presented. The central results include a growing specific heat C with increasing field B, a divergent magnetic contribution to C/T at low temperatures, an abrupt jump and a peak in C/T at 2.90 T and 7 T for B||ab-plane and B||c-axis, respectively, and corresponding changes in the low T power laws of the resistivity. The novelty of this work lies in the fact that the quantum fluctuations occur in a system that shows both intralayer metamagnetism and interlayer spontaneous ferromagnetism, a feature characteristically different from all other systems involving quantum criticality.
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Submitted 30 May, 2006;
originally announced May 2006.
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Dynamics of the Electro-Optic response of Blue Bronze
Authors:
L. Ladino,
J. W. Brill,
M. Freamat,
M. Uddin,
D. Dominko
Abstract:
We have studied the charge density wave (CDW) repolarization dynamics in blue bronze by applying square-wave voltages of different frequencies to the sample and measuring the changes in infrared transmittance, proportional to CDW strain. The frequency dependence of the electro-transmittance was fit to a modified harmonic oscillator response and the evolution of the parameters as functions of vol…
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We have studied the charge density wave (CDW) repolarization dynamics in blue bronze by applying square-wave voltages of different frequencies to the sample and measuring the changes in infrared transmittance, proportional to CDW strain. The frequency dependence of the electro-transmittance was fit to a modified harmonic oscillator response and the evolution of the parameters as functions of voltage, position, and temperature are discussed. Resonant frequencies decrease with distance from the current contacts, indicating that the resulting delays are intrinsic to the CDW with the strain effectively flowing from the contact. For a fixed position, the average relaxation time has a voltage dependence given by tau_0~V^-p, with 1<p<2. The temperature dependence of the fitting parameters shows that the dynamics are governed by both the force on the CDW and the CDW current: for a given force and position, both the relaxation and delay times are inversely proportional to the CDW current as temperature is varied. The long relaxation and delay times (~ 1 ms) suggest that the strain response involves the motion of macroscopic objects, presumably CDW phase dislocation lines.
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Submitted 9 July, 2006; v1 submitted 19 May, 2006;
originally announced May 2006.
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Thermal and Magnetic Properties of the Spin-Chain Material, Pr3RuO7
Authors:
M. Freamat,
X. N. Lin,
V. Durairaj,
S. Chikara,
G. Cao,
J. W. Brill
Abstract:
We present measurements of the magnetic moment and specific heat of single crystals of the spin-chain insulator, Pr3RuO7. The susceptibility indicates that three-dimensional antiferromagnetic order sets in at TN = 54 K, with spin polarization approximately along the chain direction, but the susceptibility anisotropy above TN indicates that the intrachain interactions are predominantly ferromagne…
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We present measurements of the magnetic moment and specific heat of single crystals of the spin-chain insulator, Pr3RuO7. The susceptibility indicates that three-dimensional antiferromagnetic order sets in at TN = 54 K, with spin polarization approximately along the chain direction, but the susceptibility anisotropy above TN indicates that the intrachain interactions are predominantly ferromagnetic while the interchain interactions are antiferromagnetic. This competition presumably gives rise to the observed metamagnetic behavior for applied fields along the polarization direction. The specific heat anomaly at TN is unusually mean-field in shape, with magnitude indicating that the transition involves mostly ordering of the ruthenium moments. A Schottky-like anomaly at low temperature may be due to praesodynium ions ordering in the effective field established at TN.
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Submitted 17 May, 2005; v1 submitted 9 March, 2005;
originally announced March 2005.
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Dynamics of the Electro-Reflective Response of TaS3
Authors:
R. C. Rai,
J. W. Brill
Abstract:
We have observed a large (~1%) change in infrared reflectance of the charge-density-wave (CDW) conductor, orthorhombic TaS3, when its CDW is depinned. The change is concentrated near one current contact. Assuming that the change in reflectance is proportional to the degree of CDW polarization, we have studied the dynamics of CDW repolarization through position dependent measurements of the varia…
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We have observed a large (~1%) change in infrared reflectance of the charge-density-wave (CDW) conductor, orthorhombic TaS3, when its CDW is depinned. The change is concentrated near one current contact. Assuming that the change in reflectance is proportional to the degree of CDW polarization, we have studied the dynamics of CDW repolarization through position dependent measurements of the variation of the electro-reflectance with the frequency of square wave voltages applied to the sample, and have found that the response could be characterized as a damped harmonic oscillator with a distribution of relaxation (i.e. dam**) times. The average relaxation time, which increases away from the contacts, varies with applied voltage as t0 ~ 1/V^p with p ~ 3/2, but the distribution of times broadens as the voltage approaches the depinning threshold. Very low resonant frequencies (~ 1 kHz) indicate a surprisingly large amount of inertia, which is observable in the time dependence of the change in reflectance as a polarity dependent delay of ~ 100 microsec.
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Submitted 28 April, 2004;
originally announced April 2004.
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Soliton Analysis of the Electro-Optical Response of Blue Bronze
Authors:
J. W. Brill
Abstract:
In recent measurements on the charge-density-wave (CDW) conductor blue bronze (K0.3MoO3), the electro-transmittance and electro-reflectance spectra were searched for intragap states that could be associated with solitons created by injection of electrons into the CDW at the current contacts [Eur. Phys. J. B 16, 295 (2000); ibid 35, 233 (2003)]. In this work, we adapt the model of soliton absorpt…
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In recent measurements on the charge-density-wave (CDW) conductor blue bronze (K0.3MoO3), the electro-transmittance and electro-reflectance spectra were searched for intragap states that could be associated with solitons created by injection of electrons into the CDW at the current contacts [Eur. Phys. J. B 16, 295 (2000); ibid 35, 233 (2003)]. In this work, we adapt the model of soliton absorption in dimerized polyacetylene to the blue bronze results, to obtain the (order of magnitude) estimate that current induced solitons occur on less than ~ 10% of the conducting chains. We discuss the implications of these results on models of soliton lifetimes and motion of CDW phase dislocations.
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Submitted 26 January, 2004;
originally announced January 2004.
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Specific Heat of Sr4Ru3O10
Authors:
X. N. Lin,
V. A. Bondarenko,
G. Cao,
J. W. Brill
Abstract:
We have measured the specific heat of single crystals of the triple-layer Ruddlesden-Popper material, Sr4Ru3O10, grown both in an image furnace and by flux-growth. The flux grown sample has a sharp mean-field-like anomaly at the onset of magnetic order, Tc = 102 K, but a much broader anomaly, indicative of residual heterogeneity, is observed for the image furnace sample. Even for the flux grown…
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We have measured the specific heat of single crystals of the triple-layer Ruddlesden-Popper material, Sr4Ru3O10, grown both in an image furnace and by flux-growth. The flux grown sample has a sharp mean-field-like anomaly at the onset of magnetic order, Tc = 102 K, but a much broader anomaly, indicative of residual heterogeneity, is observed for the image furnace sample. Even for the flux grown sample, however, the anomaly is at least an order of magnitude smaller than one would expect for complete ordering of the spins. Neither sample exhibits an anomaly at Tm ~ 50 K, where magnetic measurements suggest that basal plane antiferromagnetism sets in. Anomalous behavior (e.g. consistent with a term in the specific heat ~ T^3/2 as would be observed for a three-dimensional ferromagnet with weak exchange) is observed at low temperatures for both samples, indicative of the unusual magnetic order in this material.
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Submitted 26 January, 2004;
originally announced January 2004.
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Electro-Reflectance Spectra of Blue Bronze
Authors:
R. C. Rai,
V. A. Bondarenko,
J. W. Brill
Abstract:
We show that the infrared reflectance of the quasi-one dimensional charge-density-wave (CDW) conductor K0.3MoO3 (blue bronze) varies with position when a voltage greater than the CDW depinning threshold is applied. The spatial dependence and spectra associated with these changes are generally as expected from the electro-transmission [B.M. Emerling, et al, Eur. Phys. J. B 16, 295 (2000)], but th…
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We show that the infrared reflectance of the quasi-one dimensional charge-density-wave (CDW) conductor K0.3MoO3 (blue bronze) varies with position when a voltage greater than the CDW depinning threshold is applied. The spatial dependence and spectra associated with these changes are generally as expected from the electro-transmission [B.M. Emerling, et al, Eur. Phys. J. B 16, 295 (2000)], but there are some differences which might be associated with changes in the CDW properties on the surface. We have examined the electro-reflectance spectrum associated with CDW current investigation for light polarized parallel to the conducting chains for signs of expected current-induced intragap states, and conclude that the density of any such states is at least an order of magnitude lower than expected.
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Submitted 24 July, 2003; v1 submitted 3 July, 2003;
originally announced July 2003.
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Field-tuned Collapse of an Orbital Ordered and Spin-polarized State: Colossal Magnetoresistance in Bilayered Ruthenate
Authors:
G. Cao,
L. Balicas,
X. N. Lin,
S. Chikara,
V. Duairaj,
E. Elhami,
J. W. Brill,
R. C. Rai
Abstract:
Ca3Ru2O7 with a Mott-like transition at 48 K features different in-plane anisotropies of magnetization and magnetoresistance. Applying magnetic field along the magnetic easy-axis precipitates a spin-polarized state via a first-order metamagnetic transition, but does not lead to a full suppression of the Mott state, whereas applying magnetic field along the magnetic hard axis does, causing a resi…
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Ca3Ru2O7 with a Mott-like transition at 48 K features different in-plane anisotropies of magnetization and magnetoresistance. Applying magnetic field along the magnetic easy-axis precipitates a spin-polarized state via a first-order metamagnetic transition, but does not lead to a full suppression of the Mott state, whereas applying magnetic field along the magnetic hard axis does, causing a resistivity reduction of three orders of magnitude. The colossal magnetoresistivity is attributed to the collapse of the orbital ordered and spin-polarized state. Evidence for a density wave is also presented.
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Submitted 3 July, 2003;
originally announced July 2003.
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Multiband superconductivity in NbSe_2 from heat transport
Authors:
Etienne Boaknin,
M. A. Tanatar,
Johnpierre Paglione,
D. G. Hawthorn,
R. W. Hill,
F. Ronning,
M. Sutherland,
Louis Taillefer,
J. Sonier,
S. M. Hayden,
J. W. Brill
Abstract:
The thermal conductivity of the layered s-wave superconductor NbSe_2 was measured down to T_c/100 throughout the vortex state. With increasing field, we identify two regimes: one with localized states at fields very near H_c1 and one with highly delocalized quasiparticle excitations at higher fields. The two associated length scales are most naturally explained as multi-band superconductivity, w…
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The thermal conductivity of the layered s-wave superconductor NbSe_2 was measured down to T_c/100 throughout the vortex state. With increasing field, we identify two regimes: one with localized states at fields very near H_c1 and one with highly delocalized quasiparticle excitations at higher fields. The two associated length scales are most naturally explained as multi-band superconductivity, with distinct small and large superconducting gaps on different sheets of the Fermi surface.
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Submitted 22 April, 2003;
originally announced April 2003.
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Competing Ground States in Triple-layered Sr4Ru3O10: Verging on Itinerant Ferromagnetism with Critical Fluctuations
Authors:
G. Cao,
L. Balicas,
W. H. Song,
Y. P. Sun,
Y. Xin,
V. A. Bondarenko,
J. W. Brill,
S. Parkin
Abstract:
Sr4Ru3O10 is characterized by a sharp metamagnetic transition and ferromagnetic behavior occurring within the basal plane and along the c-axis, respectively. Resistivity at magnetic field, B, exhibits low-frequency quantum oscillations when B||c-axis and large magnetoresistivity accompanied by critical fluctuations driven by the metamagnetism when B^c-axis. The complex behavior evidenced in resi…
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Sr4Ru3O10 is characterized by a sharp metamagnetic transition and ferromagnetic behavior occurring within the basal plane and along the c-axis, respectively. Resistivity at magnetic field, B, exhibits low-frequency quantum oscillations when B||c-axis and large magnetoresistivity accompanied by critical fluctuations driven by the metamagnetism when B^c-axis. The complex behavior evidenced in resistivity, magnetization and specific heat presented is not characteristic of any obvious ground states, and points to an exotic state that shows a delicate balance between fluctuations and order.
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Submitted 17 April, 2003;
originally announced April 2003.
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Effects of hydrostatic pressure on the magnetic susceptibility of ruthenium oxide Sr3Ru2O7: Evidence for pressure-enhanced antiferromagnetic instability
Authors:
Yuri V. Sushko,
Bruno DeHarak,
Gang Cao,
G. Shaw,
D. K. Powell,
J. W. Brill
Abstract:
Hydrostatic pressure effects on the temperature- and magnetic field dependencies of the in-plane and out-of-plane magnetization of the bi-layered perovskite Sr3Ru2O7 have been studied by SQUID magnetometer measurements under a hydrostatic helium-gas pressure. The anomalously enhanced low-temperature value of the paramagnetic susceptibility has been found to systematically decrease with increasin…
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Hydrostatic pressure effects on the temperature- and magnetic field dependencies of the in-plane and out-of-plane magnetization of the bi-layered perovskite Sr3Ru2O7 have been studied by SQUID magnetometer measurements under a hydrostatic helium-gas pressure. The anomalously enhanced low-temperature value of the paramagnetic susceptibility has been found to systematically decrease with increasing pressure. The effect is accompanied by an increase of the temperature Tmax of a pronounced peak of susceptibility. Thus, magnetization measurements under hydrostatic pressure reveal that the lattice contraction in the structure of Sr3Ru2O7 promotes antiferromagnetism and not ferromagnetism, contrary to the previous beliefs. The effects can be explained by the enhancement of the inter-bi-layer antiferromagnetic spin coupling, driven by the shortening of the superexchange path, and suppression, due to the band-broadening effect, of competing itinerant ferromagnetic correlations.
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Submitted 11 March, 2003;
originally announced March 2003.
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Heat Conduction in the Vortex State of NbSe_2: Evidence for Multi-Band Superconductivity
Authors:
Etienne Boaknin,
M. A. Tanatar,
Johnpierre Paglione,
D. Hawthorn,
F. Ronning,
R. W. Hill,
M. Sutherland,
Louis Taillefer,
Jeff Sonier,
S. M. Hayden,
J. W. Brill
Abstract:
The thermal conductivity kappa of the layered s-wave superconductor NbSe_2 was measured down to T_c/100 throughout the vortex state. With increasing field, we identify two regimes: one with localized states at fields very near H_c1 and one with highly delocalized quasiparticle excitations at higher fields. The two associated length scales are naturally explained as multi-band superconductivity,…
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The thermal conductivity kappa of the layered s-wave superconductor NbSe_2 was measured down to T_c/100 throughout the vortex state. With increasing field, we identify two regimes: one with localized states at fields very near H_c1 and one with highly delocalized quasiparticle excitations at higher fields. The two associated length scales are naturally explained as multi-band superconductivity, with distinct small and large superconducting gaps on different sheets of the Fermi surface. This behavior is compared to that of the multi-band superconductor MgB_2 and the conventional superconductor V_3Si.
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Submitted 18 March, 2003; v1 submitted 15 November, 2002;
originally announced November 2002.
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Low-Field Anomaly in the Specific Heat of s-wave Superconductors due to the Expansion of the Vortex Cores
Authors:
J. E. Sonier,
M. F. Hundley,
J. D. Thompson,
J. W. Brill
Abstract:
The magnetic field dependence of the electronic specific heat C(H) in the s-wave superconductor NbSe_2 shows curvature at low fields, resembling the near H^1/2 term in C(H) which has been reported in high-T_c superconductors and attributed to a d-wave pairing state. In NbSe_2 we find that the low field behavior in C(H) is described quantitatively by the expansion of vortex cores and the field de…
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The magnetic field dependence of the electronic specific heat C(H) in the s-wave superconductor NbSe_2 shows curvature at low fields, resembling the near H^1/2 term in C(H) which has been reported in high-T_c superconductors and attributed to a d-wave pairing state. In NbSe_2 we find that the low field behavior in C(H) is described quantitatively by the expansion of vortex cores and the field dependence of the magnetic induction B above H_c1. The associated change in the density of quasiparticle states localized in the vortex cores provides a simple explanation for the "low-field anomaly" in C(H) observed in s-wave superconductors.
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Submitted 26 October, 1999; v1 submitted 30 November, 1998;
originally announced November 1998.
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Muon-Spin Rotation Measurements of the Magnetic Field Dependence of the Vortex-Core Radius and Magnetic Penetration Depth in NbSe2
Authors:
J. E. Sonier,
R. F. Kiefl,
J. H. Brewer,
J. Chakhalian,
S. R. Dunsiger,
W. A. MacFarlane,
R. I. Miller,
A. Wong,
G. M. Luke,
J. W. Brill
Abstract:
Muon-spin rotation spectroscopy has been used to measure the internal magnetic field distribution in NbSe2 for Hc1 << H < 0.25 Hc2. The deduced profiles of the supercurrent density indicate that the vortex-core radius in the bulk decreases sharply with increasing magnetic field. This effect, which is attributed to increased vortex-vortex interactions, does not agree with the dirty-limit microsco…
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Muon-spin rotation spectroscopy has been used to measure the internal magnetic field distribution in NbSe2 for Hc1 << H < 0.25 Hc2. The deduced profiles of the supercurrent density indicate that the vortex-core radius in the bulk decreases sharply with increasing magnetic field. This effect, which is attributed to increased vortex-vortex interactions, does not agree with the dirty-limit microscopic theory. A simple phenomenological equation in which the core radius depends on the intervortex spacing is used to model this behaviour. In addition, we find for the first time that the in-plane magnetic penetration depth increases linearly with H in the vortex state of a conventional superconductor.
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Submitted 15 August, 1997;
originally announced August 1997.