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Parallel refreshed cryogenic charge-locking array with low power dissipation
Authors:
Xinya Bian,
G Andrew D Briggs,
Jan A Mol
Abstract:
To build a large scale quantum circuit comprising millions of cryogenic qubits will require an efficient way to supply large numbers of classic control signals. Given the limited number of direct connections allowed from room temperature, multiple level of signal multiplexing becomes essential. The stacking of hardware to accomplish this task is highly dependent on the lowest level implementation…
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To build a large scale quantum circuit comprising millions of cryogenic qubits will require an efficient way to supply large numbers of classic control signals. Given the limited number of direct connections allowed from room temperature, multiple level of signal multiplexing becomes essential. The stacking of hardware to accomplish this task is highly dependent on the lowest level implementation of control electronics, of which an open question is the feasibility of mK integration. Such integration is preferred for signal transmission and wire interconnection, provided it is not limited by the large power dissipation involved. Novel cryogenic electronics that prioritises power efficiency has to be developed to meet the tight thermal budget. In this paper, we present a power efficient approach to implement charge-locking array.
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Submitted 27 March, 2024;
originally announced March 2024.
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Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Authors:
Xinya Bian,
Hannah J Joyce,
Charles G Smith,
Michael J Kelly,
G Andrew D Briggs,
Jan A Mol
Abstract:
In this paper, we present a reconfigurable multiplex (MUX) setup that increases the throughput of electrical characterisation at cryogenic temperature. The setup separates the MUX circuitry from quantum device under test (qDUT), allowing qDUT chips to be exchanged easily and MUX chips to be reused. To interface with different types of qDUTs, board-level designs are incorporated to allow interconne…
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In this paper, we present a reconfigurable multiplex (MUX) setup that increases the throughput of electrical characterisation at cryogenic temperature. The setup separates the MUX circuitry from quantum device under test (qDUT), allowing qDUT chips to be exchanged easily and MUX chips to be reused. To interface with different types of qDUTs, board-level designs are incorporated to allow interconnects flexibly routed into different topology. MUXs are built based on a multiple level selective gating (MLSG) scheme, where the number of multiplexed output channels (interconnects) is exponentially dependent on the number of control lines. In the prototype setup presented in this paper, with 14 out of 44 existing wires from room temperature, 4 MUXs at cryogenic temperature can supply in total 128 interconnects to interface with qDUTs. We validate the MUX setup operation and assess the various limits existed by measuring k$Ω$ resistors made of $μ$m-size graphene ribbons. We further demonstrate the setup by performing charge transport measurement on 128 nm-size graphene quantum devices in a single cooling down.
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Submitted 27 March, 2024;
originally announced March 2024.
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Tuning Multipolar Mie Scattering of Particles on a Dielectric-Covered Mirror
Authors:
Kan Yao,
Jie Fang,
Taizhi Jiang,
Andrew F. Briggs,
Alec M. Skipper,
Youngsun Kim,
Mikhail A. Belkin,
Brian A. Korgel,
Seth R. Bank,
Yuebing Zheng
Abstract:
Optically resonant particles are key building blocks of many nanophotonic devices such as optical antennas and metasurfaces. Because the functionalities of such devices are largely determined by the optical properties of individual resonators, extending the attainable responses from a given particle is highly desirable. Practically, this is usually achieved by introducing an asymmetric dielectric…
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Optically resonant particles are key building blocks of many nanophotonic devices such as optical antennas and metasurfaces. Because the functionalities of such devices are largely determined by the optical properties of individual resonators, extending the attainable responses from a given particle is highly desirable. Practically, this is usually achieved by introducing an asymmetric dielectric environment. However, commonly used simple substrates have limited influences on the optical properties of the particles atop. Here, we show that the multipolar scattering of silicon microspheres can be effectively modified by placing the particles on a dielectric-covered mirror, which tunes the coupling between the Mie resonances of microspheres and the standing waves and waveguide modes in the dielectric spacer. This tunability allows selective excitation, enhancement, and suppression of the multipolar resonances and enables scattering at extended wavelengths, providing new opportunities in controlling light-matter interactions for various applications. We further demonstrate with experiments the detection of molecular fingerprints by single-particle mid-infrared spectroscopy, and, with simulations strong optical repulsive forces that could elevate the particles from a substrate.
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Submitted 11 November, 2023;
originally announced November 2023.
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The Future of Fundamental Science Led by Generative Closed-Loop Artificial Intelligence
Authors:
Hector Zenil,
Jesper Tegnér,
Felipe S. Abrahão,
Alexander Lavin,
Vipin Kumar,
Jeremy G. Frey,
Adrian Weller,
Larisa Soldatova,
Alan R. Bundy,
Nicholas R. Jennings,
Koichi Takahashi,
Lawrence Hunter,
Saso Dzeroski,
Andrew Briggs,
Frederick D. Gregory,
Carla P. Gomes,
Jon Rowe,
James Evans,
Hiroaki Kitano,
Ross King
Abstract:
Recent advances in machine learning and AI, including Generative AI and LLMs, are disrupting technological innovation, product development, and society as a whole. AI's contribution to technology can come from multiple approaches that require access to large training data sets and clear performance evaluation criteria, ranging from pattern recognition and classification to generative models. Yet,…
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Recent advances in machine learning and AI, including Generative AI and LLMs, are disrupting technological innovation, product development, and society as a whole. AI's contribution to technology can come from multiple approaches that require access to large training data sets and clear performance evaluation criteria, ranging from pattern recognition and classification to generative models. Yet, AI has contributed less to fundamental science in part because large data sets of high-quality data for scientific practice and model discovery are more difficult to access. Generative AI, in general, and Large Language Models in particular, may represent an opportunity to augment and accelerate the scientific discovery of fundamental deep science with quantitative models. Here we explore and investigate aspects of an AI-driven, automated, closed-loop approach to scientific discovery, including self-driven hypothesis generation and open-ended autonomous exploration of the hypothesis space. Integrating AI-driven automation into the practice of science would mitigate current problems, including the replication of findings, systematic production of data, and ultimately democratisation of the scientific process. Realising these possibilities requires a vision for augmented AI coupled with a diversity of AI approaches able to deal with fundamental aspects of causality analysis and model discovery while enabling unbiased search across the space of putative explanations. These advances hold the promise to unleash AI's potential for searching and discovering the fundamental structure of our world beyond what human scientists have been able to achieve. Such a vision would push the boundaries of new fundamental science rather than automatize current workflows and instead open doors for technological innovation to tackle some of the greatest challenges facing humanity today.
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Submitted 29 August, 2023; v1 submitted 9 July, 2023;
originally announced July 2023.
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Quantum Interference Enhances the Performance of Single-Molecule Transistors
Authors:
Zhixin Chen,
Iain M. Grace,
Steffen L. Woltering,
Lina Chen,
Alex Gee,
Jonathan Baugh,
G. Andrew D. Briggs,
Lapo Bogani,
Jan A. Mol,
Colin J. Lambert,
Harry L. Anderson,
James O. Thomas
Abstract:
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device…
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An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects are exploited correctly, they can simultaneously lower energy consumption and boost device performance.2-6 Here, we demonstrate experimentally how the performance of molecular transistors can be improved when the resistive channel contains two destructively-interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor device to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a > 7 kHz operating frequency, and stability over >105 cycles. This performance is competitive with the best nanoelectronic transistors. We fully map the antiresonance interference features in conductance, reproduce the behaviour by density functional theory calculations, and trace back this high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturised electronics.
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Submitted 17 April, 2023;
originally announced April 2023.
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Stability of long-sustained oscillations induced by electron tunneling
Authors:
Jorge Tabanera-Bravo,
Florian Vigneau,
Juliette Monsel,
Kushagra Aggarwal,
Léa Bresque,
Federico Fedele,
Federico Cerisola,
G. A. D. Briggs,
Janet Anders,
Alexia Aufèves,
Juan M. R. Parrondo,
Natalia Ares
Abstract:
Self-oscillations are the result of an efficient mechanism generating periodic motion from a constant power source. In quantum devices, these oscillations may arise due to the interaction between single electron dynamics and mechanical motion. We show that, due to the complexity of this mechanism, these self-oscillations may irrupt, vanish, or exhibit a bistable behaviour causing hysteresis cycles…
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Self-oscillations are the result of an efficient mechanism generating periodic motion from a constant power source. In quantum devices, these oscillations may arise due to the interaction between single electron dynamics and mechanical motion. We show that, due to the complexity of this mechanism, these self-oscillations may irrupt, vanish, or exhibit a bistable behaviour causing hysteresis cycles. We observe these hysteresis cycles and characterize the stability of different regimes in both single and double quantum dot configurations. In particular cases, we find these oscillations stable for over 20 seconds, many orders of magnitude above electronic and mechanical characteristic timescales, revealing the robustness of the mechanism at play.
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Submitted 26 March, 2024; v1 submitted 8 November, 2022;
originally announced November 2022.
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Efficient and Scalable GaInAs Thermophotovoltaic Devices
Authors:
Eric J. Tervo,
Ryan M. France,
Daniel J. Friedman,
Madhan K. Arulanandam,
Richard R. King,
Tarun C. Narayan,
Cecilia Luciano,
Dustin P. Nizamian,
Benjamin A. Johnson,
Alexandra R. Young,
Leah Y. Kuritzky,
Emmett E. Perl,
Moritz Limpinsel,
Brendan M. Kayes,
Andrew J. Ponec,
David M. Bierman,
Justin A. Briggs,
Myles A. Steiner
Abstract:
Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical powe…
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Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical power density of 3.78 W/cm$^2$ at an emitter temperature of 1850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs / 0.74-eV GaInAs device illustrate this promise.
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Submitted 1 July, 2022;
originally announced July 2022.
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Phase-Coherent Charge Transport through a Porphyrin Nanoribbon
Authors:
Zhixin Chen,
Jie-Ren Deng,
Songjun Hou,
Xinya Bian,
Jacob L. Swett,
Qingqing Wu,
Jonathan Baugh,
G. Andrew D. Briggs,
Jan A. Mol,
Colin J. Lambert,
Harry L. Anderson,
James O. Thomas
Abstract:
Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is phase coherent, as molecules usually act as scattering centres, without the possibility of showing particle-wave duality. Here we show electron transmiss…
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Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is phase coherent, as molecules usually act as scattering centres, without the possibility of showing particle-wave duality. Here we show electron transmission remains phase coherent in molecular porphyrin nanoribbons, synthesized with perfectly defined geometry, connected to graphene electrodes. The device acts as a graphene Fabry-Pérot interferometer, allowing direct probing of the transport mechanisms throughout several regimes, including the Kondo one. Electrostatic gating allows measurement of the molecular conductance in multiple molecular oxidation states, demonstrating a thousand-fold increase of the current by interference, and unravelling molecular and graphene transport pathways. These results demonstrate a platform for the use of interferometric effects in single-molecule junctions, opening up new avenues for studying quantum coherence in molecular electronic and spintronic devices.
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Submitted 5 September, 2022; v1 submitted 17 May, 2022;
originally announced May 2022.
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Charge-state dependent vibrational relaxation in a single-molecule junction
Authors:
Xinya Bian,
Zhixin Chen,
Jakub K. Sowa,
Charalambos Evangeli,
Bart Limburg,
Jacob L. Swett,
Jonathan Baugh,
G. Andrew D. Briggs,
Harry L. Anderson,
Jan A. Mol,
James O. Thomas
Abstract:
The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneling within the Coulomb-blockade regime. The sequential transport is initiated by current-induced phonon absorption and proceeds by rapid sequential tra…
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The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneling within the Coulomb-blockade regime. The sequential transport is initiated by current-induced phonon absorption and proceeds by rapid sequential transport via a non-equilibrium vibrational distribution. We demonstrate this is possible only when the vibrational dissipation is slow relative to sequential tunneling rates, and obtain a lower bound for the vibrational relaxation time of 8 ns, a value that is dependent on the molecular charge state.
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Submitted 25 February, 2022;
originally announced February 2022.
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Identifying Pauli spin blockade using deep learning
Authors:
Jonas Schuff,
Dominic T. Lennon,
Simon Geyer,
David L. Craig,
Federico Fedele,
Florian Vigneau,
Leon C. Camenzind,
Andreas V. Kuhlmann,
G. Andrew D. Briggs,
Dominik M. Zumbühl,
Dino Sejdinovic,
Natalia Ares
Abstract:
Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-devic…
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Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We present a machine learning algorithm capable of automatically identifying PSB using charge transport measurements. The scarcity of PSB data is circumvented by training the algorithm with simulated data and by using cross-device validation. We demonstrate our approach on a silicon field-effect transistor device and report an accuracy of 96% on different test devices, giving evidence that the approach is robust to device variability. The approach is expected to be employable across all types of quantum dot devices.
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Submitted 1 August, 2023; v1 submitted 1 February, 2022;
originally announced February 2022.
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Bridging the reality gap in quantum devices with physics-aware machine learning
Authors:
D. L. Craig,
H. Moon,
F. Fedele,
D. T. Lennon,
B. Van Straaten,
F. Vigneau,
L. C. Camenzind,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
D. Sejdinovic,
N. Ares
Abstract:
The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field…
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The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach has enabled us to infer the disorder potential of a nanoscale electronic device from electron transport data. This inference is validated by verifying the algorithm's predictions about the gate voltage values required for a laterally-defined quantum dot device in AlGaAs/GaAs to produce current features corresponding to a double quantum dot regime.
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Submitted 22 November, 2021;
originally announced November 2021.
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Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
Authors:
B. Severin,
D. T. Lennon,
L. C. Camenzind,
F. Vigneau,
F. Fedele,
D. Jirovec,
A. Ballabio,
D. Chrastina,
G. Isella,
M. de Kruijf,
M. J. Carballido,
S. Svab,
A. V. Kuhlmann,
F. R. Braakman,
S. Geyer,
F. N. M. Froning,
H. Moon,
M. A. Osborne,
D. Sejdinovic,
G. Katsaros,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares
Abstract:
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra…
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The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
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Submitted 27 July, 2021;
originally announced July 2021.
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Single-electron transport in a molecular Hubbard dimer
Authors:
James O. Thomas,
Jakub K. Sowa,
Bart Limburg,
Xinya Bian,
Charalambos Evangeli,
Jacob L. Swett,
Sumit Tewari,
Jonathan Baugh,
George C. Schatz,
G. Andrew D. Briggs,
Harry L. Anderson,
Jan A. Mol
Abstract:
Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us t…
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Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us to study the role of electron-electron interactions in the transport setting. In particular, we empirically determine the molecule's on-site and inter-site electron-electron repulsion energies, which are in good agreement with density functional calculations, and establish the molecular electronic structure within various charge states. The gate-dependent rectification behavior is used to further confirm the selection rules and state degeneracies resulting from the Hubbard model. We therefore demonstrate that current flow through the molecule is governed by a non-trivial set of vibrationally coupled electronic transitions between various many-body states, and experimentally confirm the importance of electron-electron interactions in single-molecule devices.
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Submitted 2 May, 2021;
originally announced May 2021.
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Radio-frequency characterization of a supercurrent transistor made from a carbon nanotube
Authors:
M. Mergenthaler,
F. J. Schupp,
A. Nersisyan,
N. Ares,
A. Baumgartner,
C. Schönenberger,
G. A. D. Briggs,
P. J. Leek,
E. A. Laird
Abstract:
A supercurrent transistor is a superconductor-semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. While such devices have been studied using DC transport, radio-frequency measurements allow for more sensitive and faster experiments. Here a supercurrent transistor made from a carbon nanotube is measured simultaneously via DC conductance and r…
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A supercurrent transistor is a superconductor-semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. While such devices have been studied using DC transport, radio-frequency measurements allow for more sensitive and faster experiments. Here a supercurrent transistor made from a carbon nanotube is measured simultaneously via DC conductance and radio-frequency reflectometry. The radio-frequency measurement resolves all the main features of the conductance data across a wide range of bias and gate voltage, and many of these features are seen more clearly. These results are promising for measuring other kinds of hybrid superconducting devices, in particular for detecting the reactive component of the impedance, which a DC measurement can never detect.
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Submitted 30 March, 2021;
originally announced March 2021.
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Ultrastrong coupling between electron tunneling and mechanical motion
Authors:
Florian Vigneau,
Juliette Monsel,
Jorge Tabanera,
Kushagra Aggarwal,
Léa Bresque,
Federico Fedele,
G. A. D Briggs,
Janet Anders,
Juan M. R. Parrondo,
Alexia Auffèves,
Natalia Ares
Abstract:
The ultrastrong coupling of single-electron tunneling and nanomechanical motion opens exciting opportunities to explore fundamental questions and develop new platforms for quantum technologies. We have measured and modeled this electromechanical coupling in a fully-suspended carbon nanotube device and report a ratio of $g_\mathrm{m}/ω_\mathrm{m} = 2.72 \pm 0.14$, where…
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The ultrastrong coupling of single-electron tunneling and nanomechanical motion opens exciting opportunities to explore fundamental questions and develop new platforms for quantum technologies. We have measured and modeled this electromechanical coupling in a fully-suspended carbon nanotube device and report a ratio of $g_\mathrm{m}/ω_\mathrm{m} = 2.72 \pm 0.14$, where $g_\mathrm{m}/2π= 0.80\pm 0.04$ GHz is the coupling strength and $ω_\mathrm{m}/2π=294.5$ MHz is the mechanical resonance frequency. This is well within the ultrastrong coupling regime and the highest among all other electromechanical platforms. We show that, although this regime was present in similar fully-suspended carbon nanotube devices, it went unnoticed. Even higher ratios could be achieved with improvement on device design.
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Submitted 6 October, 2022; v1 submitted 28 March, 2021;
originally announced March 2021.
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Class Clown: Data Redaction in Machine Unlearning at Enterprise Scale
Authors:
Daniel L. Felps,
Amelia D. Schwickerath,
Joyce D. Williams,
Trung N. Vuong,
Alan Briggs,
Matthew Hunt,
Evan Sakmar,
David D. Saranchak,
Tyler Shumaker
Abstract:
Individuals are gaining more control of their personal data through recent data privacy laws such the General Data Protection Regulation and the California Consumer Privacy Act. One aspect of these laws is the ability to request a business to delete private information, the so called "right to be forgotten" or "right to erasure". These laws have serious financial implications for companies and org…
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Individuals are gaining more control of their personal data through recent data privacy laws such the General Data Protection Regulation and the California Consumer Privacy Act. One aspect of these laws is the ability to request a business to delete private information, the so called "right to be forgotten" or "right to erasure". These laws have serious financial implications for companies and organizations that train large, highly accurate deep neural networks (DNNs) using these valuable consumer data sets. However, a received redaction request poses complex technical challenges on how to comply with the law while fulfilling core business operations. We introduce a DNN model lifecycle maintenance process that establishes how to handle specific data redaction requests and minimize the need to completely retrain the model. Our process is based upon the membership inference attack as a compliance tool for every point in the training set. These attack models quantify the privacy risk of all training data points and form the basis of follow-on data redaction from an accurate deployed model; excision is implemented through incorrect label assignment within incremental model updates.
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Submitted 8 December, 2020;
originally announced December 2020.
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Examining Experimental Raman Mode Behavior in Mono- and Bi-layer 2H-TaSe$_{2}$ via Density Functional Theory
Authors:
Sugata Chowdhury,
Heather M. Hill,
Albert F. Rigosi,
Andrew Briggs,
Helmuth Berger,
David B. Newell,
Angela R. Hight Walker,
Francesca Tavazza
Abstract:
Tantalum diselenide (TaSe$_{2}$) is a metallic transition metal dichalcogenide whose equilibrium structure and vibrational behavior strongly depends on temperature and thickness, including the emergence of charge density wave (CDW) states at very low T. In this work, observed modes for mono- and bi-layer are described across several spectral regions and com-pared to the bulk ones. Such modes, incl…
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Tantalum diselenide (TaSe$_{2}$) is a metallic transition metal dichalcogenide whose equilibrium structure and vibrational behavior strongly depends on temperature and thickness, including the emergence of charge density wave (CDW) states at very low T. In this work, observed modes for mono- and bi-layer are described across several spectral regions and com-pared to the bulk ones. Such modes, including an experimentally observed forbidden Raman mode and low frequency CDW modes, are then matched to corresponding density functional theory (DFT) predicted vibrations, to unveil their inner working. The excellent match between experimental and computational results justifies the presented vibrational visualizations of these modes. Additional support is provided by experimental phonons seen in Raman spectra as a function of temperature and thickness. These results highlight the importance of understanding interlayer interactions and their effects on mode behaviors.
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Submitted 5 December, 2020;
originally announced December 2020.
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Bootstrap Aggregation for Point-based Generalized Membership Inference Attacks
Authors:
Daniel L. Felps,
Amelia D. Schwickerath,
Joyce D. Williams,
Trung N. Vuong,
Alan Briggs,
Matthew Hunt,
Evan Sakmar,
David D. Saranchak,
Tyler Shumaker
Abstract:
An efficient scheme is introduced that extends the generalized membership inference attack to every point in a model's training data set. Our approach leverages data partitioning to create variable sized training sets for the reference models. We then train an attack model for every single training example for a reference model configuration based upon output for each individual point. This allows…
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An efficient scheme is introduced that extends the generalized membership inference attack to every point in a model's training data set. Our approach leverages data partitioning to create variable sized training sets for the reference models. We then train an attack model for every single training example for a reference model configuration based upon output for each individual point. This allows us to quantify the membership inference attack vulnerability of each training data point. Using this approach, we discovered that smaller amounts of reference model training data led to a stronger attack. Furthermore, the reference models do not need to be of the same architecture as the target model, providing additional attack efficiencies. The attack may also be performed by an adversary even when they do not have the complete original data set.
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Submitted 17 November, 2020;
originally announced November 2020.
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Deep Reinforcement Learning for Efficient Measurement of Quantum Devices
Authors:
V. Nguyen,
S. B. Orbell,
D. T. Lennon,
H. Moon,
F. Vigneau,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
D. Sejdinovic,
N. Ares
Abstract:
Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to navigate large parameter spaces. This paper proposes a novel approach to the efficient measurement of quantum devices based on deep reinforcement learnin…
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Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to navigate large parameter spaces. This paper proposes a novel approach to the efficient measurement of quantum devices based on deep reinforcement learning. We focus on double quantum dot devices, demonstrating the fully automatic identification of specific transport features called bias triangles. Measurements targeting these features are difficult to automate, since bias triangles are found in otherwise featureless regions of the parameter space. Our algorithm identifies bias triangles in a mean time of less than 30 minutes, and sometimes as little as 1 minute. This approach, based on dueling deep Q-networks, can be adapted to a broad range of devices and target transport features. This is a crucial demonstration of the utility of deep reinforcement learning for decision making in the measurement and operation of quantum devices.
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Submitted 30 September, 2020;
originally announced September 2020.
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Measuring the thermodynamic cost of timekee**
Authors:
A. N. Pearson,
Y. Guryanova,
P. Erker,
E. A. Laird,
G. A. D. Briggs,
M. Huber,
N. Ares
Abstract:
All clocks, in some form or another, use the evolution of nature towards higher entropy states to quantify the passage of time. Due to the statistical nature of the second law and corresponding entropy flows, fluctuations fundamentally limit the performance of any clock. This suggests a deep relation between the increase in entropy and the quality of clock ticks. Indeed, minimal models for autonom…
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All clocks, in some form or another, use the evolution of nature towards higher entropy states to quantify the passage of time. Due to the statistical nature of the second law and corresponding entropy flows, fluctuations fundamentally limit the performance of any clock. This suggests a deep relation between the increase in entropy and the quality of clock ticks. Indeed, minimal models for autonomous clocks in the quantum realm revealed that a linear relation can be derived, where for a limited regime every bit of entropy linearly increases the accuracy of quantum clocks. But can such a linear relation persist as we move towards a more classical system? We answer this in the affirmative by presenting the first experimental investigation of this thermodynamic relation in a nanoscale clock. We stochastically drive a nanometer-thick membrane and read out its displacement with a radio-frequency cavity, allowing us to identify the ticks of a clock. We show theoretically that the maximum possible accuracy for this classical clock is proportional to the entropy created per tick, similar to the known limit for a weakly coupled quantum clock but with a different proportionality constant. We measure both the accuracy and the entropy. Once non-thermal noise is accounted for, we find that there is a linear relation between accuracy and entropy and that the clock operates within an order of magnitude of the theoretical bound.
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Submitted 15 June, 2020;
originally announced June 2020.
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Influence of Dimensionality on the Charge Density Wave Phase of 2H-TaSe$_{2}$
Authors:
Sugata Chowdhury,
Albert F. Rigosi,
Heather M. Hill,
Andrew Briggs,
David B. Newell,
Helmuth Berger,
Angela R. Hight Walker,
Francesca Tavazza
Abstract:
Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to investigate how structural, electronic, and Raman spectral properties of the CDW configuration change as a function of thickness. Such findings highlight…
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Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to investigate how structural, electronic, and Raman spectral properties of the CDW configuration change as a function of thickness. Such findings highlight the influence of dimensionality change (from 2D to 3D) and van der Waals (vdW) interactions on the system properties. The vdW effect is most strongly present in bulk TaSe$_{2}$ in the spectral range 165 cm$^{-1}$ to 215 cm$^{-1}$. The phonons seen in the experimental Raman spectra are compared with the results calculated from the DFT models as a function of temperature and layer number. The matching of data and calculations substantiates the model's description of the CDW structural formation as a function of thickness, which is shown in depth for 1L through 6L systems. These results highlight the importance of understanding interlayer interactions, which are pervasive in many quantum phenomena involving two-dimensional confinement.
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Submitted 20 August, 2021; v1 submitted 22 May, 2020;
originally announced May 2020.
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Enhanced Room Temperature Infrared LEDs using Monolithically Integrated Plasmonic Materials
Authors:
Andrew F. Briggs,
Leland Nordin,
Aaron J. Muhowski,
Evan Simmons,
Pankul Dhingra,
Minjoo L. Lee,
Viktor A. Podolskiy,
Daniel Wasserman,
Seth R. Bank
Abstract:
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epita…
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Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode (LED), leading to a ~5.6 x enhancement over an otherwise identical non-plasmonic control sample. Devices exhibited optical powers comparable, and temperature performance far superior, to commercially-available devices.
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Submitted 25 August, 2020; v1 submitted 6 May, 2020;
originally announced May 2020.
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Quantum device fine-tuning using unsupervised embedding learning
Authors:
N. M. van Esbroeck,
D. T. Lennon,
H. Moon,
V. Nguyen,
F. Vigneau,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
D. Sejdinovic,
N. Ares
Abstract:
Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate an algorithm capable of fine-tuning several device parameters at once. The algorithm acquires a measurement and assigns it a score using a variational…
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Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate an algorithm capable of fine-tuning several device parameters at once. The algorithm acquires a measurement and assigns it a score using a variational auto-encoder. Gate voltage settings are set to optimise this score in real-time in an unsupervised fashion. We report fine-tuning times of a double quantum dot device within approximately 40 min.
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Submitted 13 January, 2020;
originally announced January 2020.
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Machine learning enables completely automatic tuning of a quantum device faster than human experts
Authors:
H. Moon,
D. T. Lennon,
J. Kirkpatrick,
N. M. van Esbroeck,
L. C. Camenzind,
Liuqi Yu,
F. Vigneau,
D. M. Zumbühl,
G. A. D. Briggs,
M. A Osborne,
D. Sejdinovic,
E. A. Laird,
N. Ares
Abstract:
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron…
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Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron transport features. We focused on gate-defined quantum dot devices, demonstrating fully automated tuning of two different devices to double quantum dot regimes in an up to eight-dimensional gate voltage space. We considered a parameter space defined by the maximum range of each gate voltage in these devices, demonstrating expected tuning in under 70 minutes. This performance exceeded a human benchmark, although we recognise that there is room for improvement in the performance of both humans and machines. Our approach is approximately 180 times faster than a pure random search of the parameter space, and it is readily applicable to different material systems and device architectures. With an efficient navigation of the gate voltage space we are able to give a quantitative measurement of device variability, from one device to another and after a thermal cycle of a device. This is a key demonstration of the use of machine learning techniques to explore and optimise the parameter space of quantum devices and overcome the challenge of device variability.
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Submitted 8 January, 2020;
originally announced January 2020.
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Ballistic Metamaterials
Authors:
Kun Li,
Evan Simmons,
A. F. Briggs,
S. R. Bank,
Daniel Wasserman,
Viktor A. Podolskiy,
Evgenii E. Narimanov
Abstract:
The interaction of free electrons with electromagnetic excitation is the fundamental mechanism responsible for ultra-strong confinement of light that, in turn, enables biosensing, near-field microscopy, optical cloaking, sub-wavelength focusing, and super-resolution imaging. These unique phenomena and functionalities critically rely on the negative permittivity of optical elements resulting from t…
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The interaction of free electrons with electromagnetic excitation is the fundamental mechanism responsible for ultra-strong confinement of light that, in turn, enables biosensing, near-field microscopy, optical cloaking, sub-wavelength focusing, and super-resolution imaging. These unique phenomena and functionalities critically rely on the negative permittivity of optical elements resulting from the free electrons. As result, progress in nanophotonics and nano-optics is often related to the development of new negative permittivity (plasmonic) media at the optical frequency of interest. Here we show that the essential mobility of free charge carriers in such conducting media dramatically alters the well-known optical response of free electron gases. We demonstrate that a ballistic resonance associated with the interplay of the time-periodic motion of the free electrons in the confines of a sub-wavelength scale nanostructure and the time periodic electromagnetic field leads to a dramatic enhancement of the electric polarization of the medium - to the point where a plasmonic response can be achieved in a composite material using only positive bulk permittivity components. This ballistic resonance opens the fields of plasmonics, nanophotonics, and metamaterials to many new constituent materials that until now were considered unsuitable for such applications, and extends the operational frequency range of existing materials to substantially shorter wavelengths. As a proof of concept, we experimentally demonstrate that ballistic resonance in all-semiconductor metamaterials results in strongly anisotropic (hyperbolic) response well above the plasma frequencies of the metamaterial components.
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Submitted 19 December, 2019;
originally announced December 2019.
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Enhanced Emission from Ultra-Thin Long Wavelength Infrared Superlattices on Epitaxial Plasmonic Materials
Authors:
L. Nordin,
K. Li,
A. Briggs,
E. Simmons,
S. Bank,
V. A. Podolskiy,
D. Wasserman
Abstract:
Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement in photoluminescence from ultra-thin (total thickness of 1/32-th wavelength) long wavelength infrared (LWIR) superlattices grown on highly doped semiconductor d…
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Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement in photoluminescence from ultra-thin (total thickness of 1/32-th wavelength) long wavelength infrared (LWIR) superlattices grown on highly doped semiconductor designer metal virtual substrates when compared to the same superlattice grown on an undoped virtual substrate. Analytical and numerical models of the emission process via a Dyadic Greens function formalism are in agreement with experimental results and relate the observed enhancement of emission to a combination of Purcell enhancement due to surface plasmon modes as well as directionality enhancement due to cavity-substrate-emitter interaction. The results presented provide a potential path towards efficient, ultra-subwavelength LWIR emitter devices, as well as a monolithic epitaxial architecture offering the opportunity to investigate the ultimate limits of light-matter interaction in coupled plasmonic/optoelectronic materials.
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Submitted 24 October, 2019;
originally announced October 2019.
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Solid-state dewetting instability in thermally-stable nanocrystalline binary alloys
Authors:
Jennifer D. Schuler,
Guild Copeland,
Khalid Hattar,
Timothy J. Rupert,
Samuel A. Briggs
Abstract:
Practical applications of nanocrystalline metallic thin films are often limited by instabilities. In addition to grain growth, the thin film itself can become unstable and collapse into islands through solid-state dewetting. Selective alloying can improve nanocrystalline stability, but the impact of this approach on dewetting is not clear. In this study, two alloys that exhibit nanocrystalline the…
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Practical applications of nanocrystalline metallic thin films are often limited by instabilities. In addition to grain growth, the thin film itself can become unstable and collapse into islands through solid-state dewetting. Selective alloying can improve nanocrystalline stability, but the impact of this approach on dewetting is not clear. In this study, two alloys that exhibit nanocrystalline thermal stability as ball milled powders are evaluated as thin films. While both alloys demonstrated dewetting behavior following annealing, the severity decreased in more dilute compositions. Ultimately, a balance may be struck between nanocrystalline stability and thin film structural stability by tuning dopant concentration.
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Submitted 31 January, 2020; v1 submitted 27 August, 2019;
originally announced August 2019.
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The role of metallic leads and electronic degeneracies in thermoelectric power generation in quantum dots
Authors:
Achim Harzheim,
Jakub K. sowa,
Jacob L. Swett,
G. Andrew D. Briggs,
Jan A. Mol,
Pascal Gehring
Abstract:
The power factor of a thermoelectric device is a measure of the heat-to-energy conversion efficiency in nanoscopic devices. Yet, even as interest in low-dimensional thermoelectric materials has increased, experimental research on what influences the power factor in these systems is scarce. Here, we present a detailed thermoelectric study of graphene quantum dot devices. We show that spin-degenerac…
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The power factor of a thermoelectric device is a measure of the heat-to-energy conversion efficiency in nanoscopic devices. Yet, even as interest in low-dimensional thermoelectric materials has increased, experimental research on what influences the power factor in these systems is scarce. Here, we present a detailed thermoelectric study of graphene quantum dot devices. We show that spin-degeneracy of the quantum dot states has a significant impact on the zero-bias conductance of the device and leads to an increase of the power factor. Conversely, we demonstrate that non-ideal heat exchange within the leads can suppress the power factor near the charge degeneracy point and non-trivially influences its temperature dependence.
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Submitted 12 June, 2019;
originally announced June 2019.
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Realization of a Carbon-Nanotube-Based Superconducting Qubit
Authors:
Matthias Mergenthaler,
Ani Nersisyan,
Andrew Patterson,
Martina Esposito,
Andreas Baumgartner,
Christian Schönenberger,
G. Andrew D. Briggs,
Edward A. Laird,
Peter J. Leek
Abstract:
Hybrid circuit quantum electrodynamics (QED) involves the study of coherent quantum physics in solid state systems via their interactions with superconducting microwave circuits. Here we present an implementation of a hybrid superconducting qubit that employs a carbon nanotube as a Josephson junction. We realize the junction by contacting a carbon nanotube with a superconducting Pd/Al bi-layer, an…
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Hybrid circuit quantum electrodynamics (QED) involves the study of coherent quantum physics in solid state systems via their interactions with superconducting microwave circuits. Here we present an implementation of a hybrid superconducting qubit that employs a carbon nanotube as a Josephson junction. We realize the junction by contacting a carbon nanotube with a superconducting Pd/Al bi-layer, and implement voltage tunability of the qubit frequency using a local electrostatic gate. We demonstrate strong dispersive coupling to a coplanar waveguide resonator via observation of a resonator frequency shift dependent on applied gate voltage. We extract qubit parameters from spectroscopy using dispersive readout and find qubit relaxation and coherence times in the range of $10-200~\rm{ns}$.
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Submitted 22 April, 2019;
originally announced April 2019.
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A coherent nanomechanical oscillator driven by single-electron tunnelling
Authors:
Yutian Wen,
N. Ares,
F. J. Schupp,
T. Pei,
G. A. D. Briggs,
E. A. Laird
Abstract:
A single-electron transistor incorporated as part of a nanomechanical resonator represents an extreme limit of electron-phonon coupling. While it allows for fast and sensitive electromechanical measurements, it also introduces backaction forces from electron tunnelling which randomly perturb the mechanical state. Despite the stochastic nature of this backaction, under conditions of strong coupling…
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A single-electron transistor incorporated as part of a nanomechanical resonator represents an extreme limit of electron-phonon coupling. While it allows for fast and sensitive electromechanical measurements, it also introduces backaction forces from electron tunnelling which randomly perturb the mechanical state. Despite the stochastic nature of this backaction, under conditions of strong coupling it is predicted to create self-sustaining coherent mechanical oscillations. Here, we verify this prediction using time-resolved measurements of a vibrating carbon nanotube transistor. This electromechanical oscillator has intriguing similarities with a laser. The single-electron transistor, pumped by an electrical bias, acts as a gain medium while the resonator acts as a phonon cavity. Despite the unconventional operating principle, which does not involve stimulated emission, we confirm that the output is coherent, and demonstrate other laser behaviour including injection locking and frequency narrowing through feedback.
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Submitted 11 March, 2019;
originally announced March 2019.
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Radio-frequency optomechanical characterization of a silicon nitride drum
Authors:
A. N. Pearson,
K. E. Khosla,
M. Mergenthaler,
G. A. D. Briggs,
E. A. Laird,
N. Ares
Abstract:
On-chip actuation and readout of mechanical motion is key to characterize mechanical resonators and exploit them for new applications. We capacitively couple a silicon nitride membrane to an off resonant radio-frequency cavity formed by a lumped element circuit. Despite a low cavity quality factor (Q$_\mathrm{E}\approx$ 7.4) and off resonant, room temperature operation, we are able to parametrize…
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On-chip actuation and readout of mechanical motion is key to characterize mechanical resonators and exploit them for new applications. We capacitively couple a silicon nitride membrane to an off resonant radio-frequency cavity formed by a lumped element circuit. Despite a low cavity quality factor (Q$_\mathrm{E}\approx$ 7.4) and off resonant, room temperature operation, we are able to parametrize several mechanical modes and estimate their optomechanical coupling strengths. This enables real-time measurements of the membrane's driven motion and fast characterization without requiring a superconducting cavity, thereby eliminating the need for cryogenic cooling. Finally, we observe optomechanically induced transparency and absorption, crucial for a number of applications including sensitive metrology, ground state cooling of mechanical motion and slowing of light.
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Submitted 20 July, 2020; v1 submitted 4 March, 2019;
originally announced March 2019.
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Understanding resonant charge transport through weakly coupled single-molecule junctions
Authors:
James O. Thomas,
Bart Limburg,
Jakub K. Sowa,
Kyle Willick,
Jonathan Baugh,
G. Andrew D. Briggs,
Erik M. Gauger,
Harry L. Anderson,
Jan A. Mol
Abstract:
Off-resonant charge transport through molecular junctions has been extensively studied since the advent of single-molecule electronics and it is now well understood within the framework of the non-interacting Landauer approach. Conversely, gaining a qualitative and quantitative understanding of the resonant transport regime has proven more elusive. Here, we study resonant charge transport through…
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Off-resonant charge transport through molecular junctions has been extensively studied since the advent of single-molecule electronics and it is now well understood within the framework of the non-interacting Landauer approach. Conversely, gaining a qualitative and quantitative understanding of the resonant transport regime has proven more elusive. Here, we study resonant charge transport through graphene-based zinc-porphyrin junctions. We experimentally demonstrate an inadequacy of the non-interacting Landauer theory as well as the conventional single-mode Franck-Condon model. Instead, we model the overall charge transport as a sequence of non-adiabatic electron transfers, the rates of which depend on both outer and inner-sphere vibrational interactions. We show that the transport properties of our molecular junctions are determined by a combination of electron-electron and electron-vibrational coupling, and are sensitive to the interactions with the wider local environment. Furthermore, we assess the importance of nuclear tunnelling and examine the suitability of semi-classical Marcus theory as a description of charge transport in molecular devices.
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Submitted 1 October, 2019; v1 submitted 18 December, 2018;
originally announced December 2018.
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Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictions
Authors:
Achim Harzheim,
Jean Spiece,
Charalambos Evangeli,
Edward McCann,
Vladimir Falko,
Yuewen Sheng,
Jamie H. Warner,
G. Andrew D. Briggs,
Jan A. Mol,
Pascal Gehring,
Oleg V. Kolosov
Abstract:
The influence of nanostructuring and quantum confinement on the thermoelectric properties of materials has been extensively studied. While this has made possible multiple breakthroughs in the achievable figure of merit, classical confinement, and its effect on the local Seebeck coefficient has mostly been neglected, as has the Peltier effect in general due to the complexity of measuring small temp…
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The influence of nanostructuring and quantum confinement on the thermoelectric properties of materials has been extensively studied. While this has made possible multiple breakthroughs in the achievable figure of merit, classical confinement, and its effect on the local Seebeck coefficient has mostly been neglected, as has the Peltier effect in general due to the complexity of measuring small temperature gradients locally. Here we report that reducing the width of a graphene channel to 100 nm changes the Seebeck coefficient by orders of magnitude. Using a scanning thermal microscope allows us to probe the local temperature of electrically contacted graphene two-terminal devices or to locally heat the sample. We show that constrictions in mono- and bilayer graphene facilitate a spatially correlated gradient in the Seebeck and Peltier coefficient, as evidenced by the pronounced thermovoltage $V_{th}$ and heating/cooling response $ΔT_{Peltier}$, respectively. This geometry dependent effect, which has not been reported previously in 2D materials, has important implications for measurements of patterned nanostructures in graphene and points to novel solutions for effective thermal management in electronic graphene devices or concepts for single material thermocouples.
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Submitted 29 November, 2018;
originally announced November 2018.
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Efficiently measuring a quantum device using machine learning
Authors:
D. T. Lennon,
H. Moon,
L. C. Camenzind,
Liuqi Yu,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
E. A. Laird,
N. Ares
Abstract:
Scalable quantum technologies will present challenges for characterizing and tuning quantum devices. This is a time-consuming activity, and as the size of quantum systems increases, this task will become intractable without the aid of automation. We present measurements on a quantum dot device performed by a machine learning algorithm. The algorithm selects the most informative measurements to per…
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Scalable quantum technologies will present challenges for characterizing and tuning quantum devices. This is a time-consuming activity, and as the size of quantum systems increases, this task will become intractable without the aid of automation. We present measurements on a quantum dot device performed by a machine learning algorithm. The algorithm selects the most informative measurements to perform next using information theory and a probabilistic deep-generative model, the latter capable of generating multiple full-resolution reconstructions from scattered partial measurements. We demonstrate, for two different measurement configurations, that the algorithm outperforms standard grid scan techniques, reducing the number of measurements required by up to 4 times and the measurement time by 3.7 times. Our contribution goes beyond the use of machine learning for data search and analysis, and instead presents the use of algorithms to automate measurement. This work lays the foundation for automated control of large quantum circuits.
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Submitted 23 October, 2018;
originally announced October 2018.
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Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
Authors:
F. J. Schupp,
F. Vigneau,
Y. Wen,
A. Mavalankar,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares,
E. A. Laird
Abstract:
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The…
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Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.
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Submitted 29 June, 2020; v1 submitted 12 October, 2018;
originally announced October 2018.
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Measuring carbon nanotube vibrations using a single-electron transistor as a fast linear amplifier
Authors:
Yutian Wen,
N. Ares,
T. Pei,
G. A. D. Briggs,
E. A. Laird
Abstract:
We demonstrate sensitive and fast electrical measurements of a carbon nanotube mechanical resonator. The nanotube is configured as a single-electron transistor, whose conductance is a sensitive transducer for its own displacement. Using an impedance-matching circuit followed by a cryogenic amplifier, the vibrations can be monitored in real time. The sensitivity of this continuous displacement meas…
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We demonstrate sensitive and fast electrical measurements of a carbon nanotube mechanical resonator. The nanotube is configured as a single-electron transistor, whose conductance is a sensitive transducer for its own displacement. Using an impedance-matching circuit followed by a cryogenic amplifier, the vibrations can be monitored in real time. The sensitivity of this continuous displacement measurement approaches within a factor 470 of the standard quantum limit.
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Submitted 23 October, 2018; v1 submitted 14 August, 2018;
originally announced August 2018.
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Seeing opportunity in every difficulty: protecting information with weak value techniques
Authors:
George C. Knee,
G. Andrew D. Briggs
Abstract:
A weak value is an effective description of the influence of a pre and post-selected 'principal' system on another 'meter' system to which it is weakly coupled. Weak values can describe anomalously large deflections of the meter, and deflections in otherwise unperturbed variables: this motivates investigation of the potential benefits of the protocol in precision metrology. We present a visual int…
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A weak value is an effective description of the influence of a pre and post-selected 'principal' system on another 'meter' system to which it is weakly coupled. Weak values can describe anomalously large deflections of the meter, and deflections in otherwise unperturbed variables: this motivates investigation of the potential benefits of the protocol in precision metrology. We present a visual interpretation of weak value experiments in phase space, enabling an evaluation of the effects of three types of detector noise as 'Fisher information efficiency' functions. These functions depend on the marginal distribution of the Wigner function of the meter, and give a unified view of the weak value protocol as a way of protecting Fisher information from detector imperfections. This approach explains why weak value techniques are more effective for avoiding detector saturation than for mitigating detector jitter or pixelation.
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Submitted 10 August, 2018;
originally announced August 2018.
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Beyond Marcus theory and the Landauer-Büttiker approach in molecular junctions: A unified framework
Authors:
Jakub K. Sowa,
Jan A. Mol,
G. Andrew D. Briggs,
Erik M. Gauger
Abstract:
Charge transport through molecular junctions is often described either as a purely coherent or a purely classical phenomenon, and described using the Landauer-Büttiker formalism or Marcus theory, respectively. Using a generalised quantum master equation, we here derive an expression for current through a molecular junction modelled as a single electronic level coupled to a collection of thermalise…
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Charge transport through molecular junctions is often described either as a purely coherent or a purely classical phenomenon, and described using the Landauer-Büttiker formalism or Marcus theory, respectively. Using a generalised quantum master equation, we here derive an expression for current through a molecular junction modelled as a single electronic level coupled to a collection of thermalised vibrational modes. We demonstrate that the aforementioned theoretical approaches can be viewed as two limiting cases of this more general expression, and present a series of approximations of this result valid at higher temperatures. We find that Marcus theory is often insufficient in describing the molecular charge transport characteristics and gives rise to a number of artefacts, especially at lower temperatures. Alternative expressions, retaining its mathematical simplicity but rectifying those shortcomings, are suggested. In particular, we show how lifetime broadening can be consistently incorporated into Marcus theory, and we derive a low-temperature correction to the semi-classical Marcus hop** rates. Our results are applied to examples building on phenomenological as well as microscopically-motivated electron-vibrational coupling. We expect them to be particularly useful in experimental studies of charge transport through single-molecule junctions as well as self-assembled monolayers.
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Submitted 29 September, 2018; v1 submitted 23 July, 2018;
originally announced July 2018.
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Miniaturized atmospheric ionization detector
Authors:
Karen Aplin,
Aaron Briggs,
Adam Baird,
Peter Hastings,
R. Giles Harrison,
Graeme Marlton
Abstract:
A small scintillator-based detector for atmospheric ionization measurements has been developed, partly in response to a need for better ionization data in the weather-forming regions of the atmosphere and partly with the intention of producing a commercially available device. The device can measure both the count rate and energy of atmospheric ionizing radiation. Here we report results of a test f…
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A small scintillator-based detector for atmospheric ionization measurements has been developed, partly in response to a need for better ionization data in the weather-forming regions of the atmosphere and partly with the intention of producing a commercially available device. The device can measure both the count rate and energy of atmospheric ionizing radiation. Here we report results of a test flight over the UK in December 2017 where the detector was flown with two Geiger counters on a meteorological radiosonde. The count rate profile with height was consistent both with the Geigers and with previous work. The energy of incoming ionizing radiation increased substantially with altitude.
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Submitted 20 April, 2018;
originally announced April 2018.
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Quantum Interference in Silicon 1D Quasi-Ballistic Junctionless Nanowire Field Effect Transistors
Authors:
Felix J. Schupp,
Muhammad M. Mirza,
Donald A. MacLaren,
G. Andrew D. Briggs,
Douglas J. Paul,
Jan A. Mol
Abstract:
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated do** densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V…
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We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated do** densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In two other devices, doped Si:P $4\times10^{19}\,\text{cm}^{-3}$ and $2\times10^{20}\,\text{cm}^{-3}$, we observe quantum interference and use the extracted gate coupling to determine the dominant energy scale and the corresponding mean-free paths. For the higher doped device the analysis yields a mean free path of $4\pm2\,\text{nm}$, which is on the order of the average dopant spacing and suggests scattering on unactivated or activated dopants. For the device with an activated dopant density of $4\times10^{19}\,\text{cm}^{-3}$ the quantum interference effects suggest a mean free path of $10\pm2\,\text{nm}$, which is comparable to the nanowire width, and thus quasi-ballistic transport. A temperature dependent analysis of Universal Conductance Fluctuations suggests a coherence length above the nanowire length for temperatures below 1.9 K and decoherence from 1D electron-electron interactions for higher temperatures. The mobility is limited by scattering on impurities rather than the expected surface roughness scattering for nanowires with diameters larger or comparable to the Fermi wavelength. Our measurements therefore provide insight into the performance limitations from dominant scattering and dephasing mechanisms in technologically relevant silicon device geometries.
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Submitted 20 February, 2018;
originally announced February 2018.
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Spiro-Conjugated Molecular Junctions: between Jahn-Teller Distortion and Destructive Quantum Interference
Authors:
Jakub K. Sowa,
Jan A. Mol,
G. Andrew D. Briggs,
Erik M. Gauger
Abstract:
The quest for molecular structures exhibiting strong quantum interference effects in the transport setting has long been on the forefront of chemical research. Here, we establish theoretically that the unusual geometry of spiro-conjugated systems gives rise to complete destructive interference in the resonant-transport regime. This results in a current blockade of the type not present in meta-conn…
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The quest for molecular structures exhibiting strong quantum interference effects in the transport setting has long been on the forefront of chemical research. Here, we establish theoretically that the unusual geometry of spiro-conjugated systems gives rise to complete destructive interference in the resonant-transport regime. This results in a current blockade of the type not present in meta-connected benzene or similar molecular structures. We further show that these systems can undergo a transport-driven Jahn-Teller distortion which can lift the aforementioned destructive-interference effects. The overall transport characteristics is determined by the interplay between the two phenomena. Spiro-conjugated systems may therefore serve as a novel platform for investigations of quantum interference and vibronic effects in the charge transport setting. The potential to control quantum interference in these systems can also turn them into attractive components in designing functional molecular circuits.
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Submitted 19 February, 2018;
originally announced February 2018.
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High pressure electron spin resonance of the endohedral fullerene $^{15}\mathrm{N@C}_{60}$
Authors:
R. T. Harding,
A. Folli,
J. Zhou,
G. A. D. Briggs,
K. Porfyrakis,
E. A. Laird
Abstract:
We measure the electron spin resonance spectrum of the endohedral fullerene molecule $^{15}\mathrm{N@C}_{60}$ at pressures ranging from atmospheric pressure to 0.25 GPa, and find that the hyperfine coupling increases linearly with pressure. We present a model based on van der Waals interactions, which accounts for this increase via compression of the fullerene cage and consequent admixture of orbi…
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We measure the electron spin resonance spectrum of the endohedral fullerene molecule $^{15}\mathrm{N@C}_{60}$ at pressures ranging from atmospheric pressure to 0.25 GPa, and find that the hyperfine coupling increases linearly with pressure. We present a model based on van der Waals interactions, which accounts for this increase via compression of the fullerene cage and consequent admixture of orbitals with a larger hyperfine coupling. Combining this model with theoretical estimates of the bulk modulus, we predict the pressure shift and compare it to our experimental results, finding fair agreement given the spread in estimates of the bulk modulus. The spin resonance linewidth is also found to depend on pressure. This is explained by considering the pressure-dependent viscosity of the solvent, which modifies the effect of dipolar coupling between spins within fullerene clusters.
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Submitted 16 December, 2017;
originally announced December 2017.
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Field-Effect Control of Graphene-Fullerene Thermoelectric Nanodevices
Authors:
Pascal Gehring,
Achim Harzheim,
Jean Spièce,
Yuewen Sheng,
Gregory Rogers,
Charalambos Evangeli,
Aadarsh Mishra,
Benjamin J. Robinson,
Kyriakos Porfyrakis,
Jamie H. Warner,
Oleg V. Kolosov,
G. Andrew D. Briggs,
Jan A. Mol
Abstract:
Although it was demonstrated that discrete molecular levels determine the sign and magnitude of the thermoelectric effect in single-molecule junctions, full electrostatic control of these levels has not been achieved to date. Here, we show that graphene nanogaps combined with gold microheaters serve as a testbed for studying single-molecule thermoelectricity. Reduced screening of the gate electric…
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Although it was demonstrated that discrete molecular levels determine the sign and magnitude of the thermoelectric effect in single-molecule junctions, full electrostatic control of these levels has not been achieved to date. Here, we show that graphene nanogaps combined with gold microheaters serve as a testbed for studying single-molecule thermoelectricity. Reduced screening of the gate electric field compared to conventional metal electrodes allows control of the position of the dominant transport orbital by hundreds of meV. We find that the power factor of graphene-fullerene junctions can be tuned over several orders of magnitude to a value close to the theoretical limit of an isolated Breit-Wigner resonance. Furthermore, our data suggest that the power factor of an isolated level is only given by the tunnel coupling to the leads and temperature. These results open up new avenues for exploring thermoelectricity and charge transport in individual molecules and highlight the importance of level alignment and coupling to the electrodes for optimum energy conversion in organic thermoelectric materials.
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Submitted 23 October, 2017;
originally announced October 2017.
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Conditioned spin and charge dynamics of a single electron quantum dot
Authors:
Eliska Greplova,
Edward A. Laird,
G. Andrew D. Briggs,
Klaus Mølmer
Abstract:
In this article we describe the incoherent and coherent spin and charge dynamics of a single electron quantum dot. We use a stochastic master equation to model the state of the system, as inferred by an observer with access to only the measurement signal. Measurements obtained during an interval of time contribute, by a past quantum state analysis, to our knowledge about the system at any time…
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In this article we describe the incoherent and coherent spin and charge dynamics of a single electron quantum dot. We use a stochastic master equation to model the state of the system, as inferred by an observer with access to only the measurement signal. Measurements obtained during an interval of time contribute, by a past quantum state analysis, to our knowledge about the system at any time $t$ within that interval. Such analysis permits precise estimation of physical parameters, and we propose and test a modification of the classical Baum-Welch parameter re-estimation method to systems driven by both coherent and incoherent processes.
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Submitted 22 August, 2017;
originally announced August 2017.
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Environment-Assisted Quantum Transport through Single-Molecule Junctions
Authors:
Jakub K. Sowa,
Jan A. Mol,
G. Andrew D. Briggs,
Erik M. Gauger
Abstract:
Single-molecule electronics has been envisioned as the ultimate goal in the miniaturisation of electronic circuits. While the aim of incorporating single-molecule junctions into modern technology still proves elusive, recent developments in this field have begun to enable experimental investigation fundamental concepts within the area of chemical physics. One such phenomenon is the concept of Envi…
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Single-molecule electronics has been envisioned as the ultimate goal in the miniaturisation of electronic circuits. While the aim of incorporating single-molecule junctions into modern technology still proves elusive, recent developments in this field have begun to enable experimental investigation fundamental concepts within the area of chemical physics. One such phenomenon is the concept of Environment-Assisted Quantum Transport which has emerged from the investigation of exciton transport in photosynthetic complexes. Here, we study charge transport through a two-site molecular junction coupled to a vibrational environment. We demonstrate that vibrational interactions can also significantly enhance the current through specific molecular orbitals. Our study offers a clear pathway towards finding and identifying environment-assisted transport phenomena in charge transport settings.
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Submitted 19 October, 2017; v1 submitted 9 June, 2017;
originally announced June 2017.
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The spin resonance clock transition of the endohedral fullerene $^{15}\mathrm{N@C}_{60}$
Authors:
R. T. Harding,
S. Zhou,
J. Zhou,
T. Lindvall,
W. K. Myers,
A. Ardavan,
G. A. D. Briggs,
K. Porfyrakis,
E. A. Laird
Abstract:
The endohedral fullerene $^{15}\mathrm{N@C}_{60}$ has narrow electron paramagnetic resonance lines which have been proposed as the basis for a condensed-matter portable atomic clock. We measure the low-frequency spectrum of this molecule, identifying and characterizing a clock transition at which the frequency becomes insensitive to magnetic field. We infer a linewidth at the clock field of 100 kH…
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The endohedral fullerene $^{15}\mathrm{N@C}_{60}$ has narrow electron paramagnetic resonance lines which have been proposed as the basis for a condensed-matter portable atomic clock. We measure the low-frequency spectrum of this molecule, identifying and characterizing a clock transition at which the frequency becomes insensitive to magnetic field. We infer a linewidth at the clock field of 100 kHz. Using experimental data, we are able to place a bound on the clock's projected frequency stability. We discuss ways to improve the frequency stability to be competitive with existing miniature clocks.
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Submitted 13 May, 2017;
originally announced May 2017.
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Measuring ionizing radiation in the atmosphere with a new balloon-borne detector
Authors:
Karen L Aplin,
Aaron A Briggs,
R Giles Harrison,
Graeme J Marlton
Abstract:
Increasing interest in energetic particle effects on weather and climate has motivated development of a miniature scintillator-based detector intended for deployment on meteorological radiosondes or unmanned airborne vehicles. The detector was calibrated with laboratory gamma sources up to 1.3 MeV, and known gamma peaks from natural radioactivity of up to 2.6 MeV. The specifications of our device…
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Increasing interest in energetic particle effects on weather and climate has motivated development of a miniature scintillator-based detector intended for deployment on meteorological radiosondes or unmanned airborne vehicles. The detector was calibrated with laboratory gamma sources up to 1.3 MeV, and known gamma peaks from natural radioactivity of up to 2.6 MeV. The specifications of our device in combination with the performance of similar devices suggest that it will respond to up to 17 MeV gamma rays. Laboratory tests show the detector can measure muons at the surface, and it is also expected to respond to other ionizing radiation including, for example, protons, electrons (>100 keV) and energetic helium nuclei from cosmic rays or during space weather events. Its estimated counting error is about 10%. Recent tests, when the detector was integrated with a meteorological radiosonde system, and carried on a balloon to ~25 km altitude, identified the transition region between energetic particles near the surface, which are dominated by terrestrial gamma emissions, to higher-energy particles in the free troposphere.
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Submitted 25 March, 2017; v1 submitted 20 March, 2017;
originally announced March 2017.
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Strong coupling of microwave photons to antiferromagnetic fluctuations in an organic magnet
Authors:
M. Mergenthaler,
J. Liu,
J. J. Le Roy,
N. Ares,
A. L. Thompson,
L. Bogani,
F. Luis,
S. J. Blundell,
T. Lancaster,
A. Ardavan,
G. A. D. Briggs,
P. J. Leek,
E. A. Laird
Abstract:
Coupling between a crystal of di(phenyl)-(2,4,6-trinitrophenyl)iminoazanium radicals and a superconducting microwave resonator is investigated in a circuit quantum electrodynamics (circuit QED) architecture. The crystal exhibits paramagnetic behavior above 4~K, with antiferromagnetic correlations appearing below this temperature, and we demonstrate strong coupling at base temperature. The magnetic…
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Coupling between a crystal of di(phenyl)-(2,4,6-trinitrophenyl)iminoazanium radicals and a superconducting microwave resonator is investigated in a circuit quantum electrodynamics (circuit QED) architecture. The crystal exhibits paramagnetic behavior above 4~K, with antiferromagnetic correlations appearing below this temperature, and we demonstrate strong coupling at base temperature. The magnetic resonance acquires a field angle dependence as the crystal is cooled down, indicating anisotropy of the exchange interactions. These results show that multispin modes in organic crystals are suitable for circuit QED, offering a platform for their coherent manipulation. They also utilize the circuit QED architecture as a way to probe spin correlations at low temperature.
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Submitted 9 October, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
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Scaling limits of graphene nanoelectrodes
Authors:
Syed Ghazi Sarwat,
Pascal Gehring,
Gerardo Rodriguez Hernandez,
Jamie H. Warner,
G. Andrew. D. Briggs,
Jan A. Mol,
Harish Bhaskaran
Abstract:
Graphene is an ideal material for fabricating atomically thin nanometre spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to create single-molecule transistors and phase change memory devices. In spite of the significant recent interest in their use in a range of nanoscale devices from phase change memories to molecular electronics, the operating and scaling limits of the…
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Graphene is an ideal material for fabricating atomically thin nanometre spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to create single-molecule transistors and phase change memory devices. In spite of the significant recent interest in their use in a range of nanoscale devices from phase change memories to molecular electronics, the operating and scaling limits of these electrodes are completely unknown. In this paper, we report on our observations of consistent voltage driven resistance switching in sub-5 nm graphene nanogaps. We find that we are able to reversibly cycle between a low and a high resistance state using feedback-controlled voltage ramps.We attribute this unexplained switching in the gap to the formation and breakdown of carbon filaments.By increasing the gap, we find that such intrinsic resistance switching of graphene nanogaps imposes a scaling limit of 10 nm (approx.) on the gap-size for devices with operating voltages of 1 to 2 volts.
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Submitted 18 February, 2017;
originally announced February 2017.
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A double quantum dot memristor
Authors:
Ying Li,
Gregory W. Holloway,
Simon C. Benjamin,
G. Andrew D. Briggs,
Jonathan Baugh,
Jan A. Mol
Abstract:
Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switchin…
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Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design.
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Submitted 8 September, 2017; v1 submitted 26 December, 2016;
originally announced December 2016.