Showing 1–16 of 16 results for author: Breugnon, P

The Belle II Detector Upgrades Framework Conceptual Design Report

Authors: H. Aihara, A. Aloisio, D. P. Auguste, M. Aversano, M. Babeluk, S. Bahinipati, Sw. Banerjee, M. Barbero, J. Baudot, A. Beaubien, F. Becherer, T. Bergauer, F. U. Bernlochner., V. Bertacchi, G. Bertolone, C. Bespin, M. Bessner, S. Bettarini, A. J. Bevan, B. Bhuyan, M. Bona, J. F. Bonis, J. Borah, F. Bosi, R. Boudagga , et al. (186 additional authors not shown)

Abstract: We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive wit… ▽ More We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments. △ Less

Submitted 4 July, 2024; v1 submitted 26 June, 2024; originally announced June 2024.

Comments: Editor: F. Forti 170 pages

Report number: KEK-REPORT-2024-1, BELLE2-REPORT-2024-042

Upgrade of Belle II Vertex Detector with CMOS Pixel Technology

Authors: M. Schwickardi, M. Babeluk, M. Barbero, J. Baudot, T. Bergauer, G. Bertolone, S. Bettarini, F. Bosi, P. Breugnon, Y. Buch, G. Casarosa, G. Dujany, C. Finck, F. Forti, A. Frey, A. Himmi, C. Irmler, A. Kumar, C. Marinas, M. Massa, L. Massaccesi, J. Mazzora de Cos, M. Minuti, S. Mondal, P. Pangaud , et al. (5 additional authors not shown)

Abstract: The Belle II experiment at KEK in Japan considers upgrading its vertex detector system to address the challenges posed by high background levels caused by the increased luminosity of the SuperKEKB collider. One proposal for upgrading the vertex detector aims to install a 5-layer all monolithic pixel vertex detector based on fully depleted CMOS sensors in 2027. The new system will use the OBELIX MA… ▽ More The Belle II experiment at KEK in Japan considers upgrading its vertex detector system to address the challenges posed by high background levels caused by the increased luminosity of the SuperKEKB collider. One proposal for upgrading the vertex detector aims to install a 5-layer all monolithic pixel vertex detector based on fully depleted CMOS sensors in 2027. The new system will use the OBELIX MAPS chips to improve background robustness and reduce occupancy levels through small and fast pixels. This causes better track finding, especially for low transverse momenta tracks. This text will focus on the predecessor of the OBELIX sensor, the TJ-Monopix2, presenting laboratory and test beam results on pixel response, efficiency, and spatial resolution. △ Less

Submitted 12 December, 2023; v1 submitted 22 November, 2023; originally announced November 2023.

Comments: 8 pages, 8 figures, Proceedings for 24th international Workshop on Radiation Imaging Detectors,25-29 JUNE 20233 Oslo

DMAPS Monopix developments in large and small electrode designs

Authors: Christian Bespin, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Leyre Flores Sanz de Acedo, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Cesar Augusto Marin Tobon, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, Francesco Piro, Petra Riedler , et al. (8 additional authors not shown)

Abstract: LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows… ▽ More LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams. △ Less

Submitted 9 July, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Comments: 7 pages, 8 figures. Proceedings of the 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

Measurements of Single Event Upset in ATLAS IBL

Authors: G. Balbi, M. Barbero, R. Beccherle, M. Bindi, P. Breugnon, P. Butti, D. Cinca, J. Dickinson, D. Ferrere, D. Fougeron, M. Garcia-Sciveres, J. Garcia Pascual, A. Gaudiello, C. Gemme, N. Giangiacomi, T. Hemperek, L. Jeanty, O. Kepka, M. Kocian, K. Lantzsch, P. Liu, C. Martin, A. Mekkaoui, M. Menouni, K. Potamianos , et al. (3 additional authors not shown)

Abstract: Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulati… ▽ More Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented. △ Less

Submitted 29 April, 2020; originally announced April 2020.

Comments: 30 pages with 32 figures

Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC

Authors: M. Barbero, P. Barrillon, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, Z. Chen, Y. Degerli, J. Dingfelder, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, F. Hügging, H. Krüger, K. Moustakas, A. Ouraou, P. Pangaud, I. Peric, D-L. Pohl, P. Rymaszewski, P. Schwemling, M. Vandenbroucke, T. Wang, N. Wermes

Abstract: Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop… ▽ More Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad. △ Less

Submitted 25 May, 2020; v1 submitted 4 November, 2019; originally announced November 2019.

Journal ref: Journal of Instrumentation, 15 05 (2020) P05013-P05013

The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Authors: Ivan Caicedo, Marlon Barbero, Pierre Barrillon, Ivan Berdalovic, Siddharth Bhat, Christian Bespin, Patrick Breugnon, Roberto Cardella, Zongde Chen, Yavuz Degerli, Jochen Dingfelder, Stephanie Godiot, Fabrice Guilloux, Toko Hirono, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Thanushan Kugathasan, Konstantinos Moustakas, Patrick Pangaud, Heinz Pernegger, David-Leon Pohl, Petra Riedler, Alexandre Rozanov, Piotr Rymaszewski , et al. (5 additional authors not shown)

Abstract: Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>… ▽ More Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed. △ Less

Submitted 25 April, 2019; v1 submitted 10 February, 2019; originally announced February 2019.

Comments: Proceedings of the PIXEL 2018 Workshop

CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade

Authors: K. Moustakas, M. Barbero, I. Berdalovic, C. Bespin, P. Breugnon, I. Caicedo, R. Cardella, Y. Degerli, N. Egidos Plaja, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, H. Krueger, T. Kugathasan, C. A. Marin Tobon, P. Pangaud, H. Pernegger, E. J. Schioppa, W. Snoeys, M. Vandenbroucke, T. Wang, N. Wermes

Abstract: Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o… ▽ More Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC). LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$. △ Less

Submitted 10 September, 2018; originally announced September 2018.

Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Authors: F. J. Iguaz, F. Balli, M. Barbero, S. Bhat, P. Breugnon, I. Caicedo, Z. Chen, Y. Degerli, S. Godiot, F. Guilloux, C. Guyot, T. Hemperek, T. Hirono, H. Krüger, J. P. Meyer, A. Ouraou, P. Pangaud, P. Rymaszewski, P. Schwemling, M. Vandenbroucke, T. Wang, N. Wermes

Abstract: This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating… ▽ More This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays). △ Less

Submitted 12 June, 2018; originally announced June 2018.

Comments: 2 pages, 3 figures, proceedings of the 14th Pisa Meeting on Advanced Detectors (PM2018), submitted to Nucl. Instr. Meth. A

Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC

Authors: Toko Hirono, Marlon Barbero, Pierre Barrillon, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Zongde Chen, Michael Daas, Yavuz Degerli, Fabrice Guilloux, Tomasz Hemperek, Fabian Hugging, Hans Kruger, Patrick Pangaud, Piotr Rymaszewski, Philippe Schwemling, Maxence Vandenbroucke, Tianyang Wang, Norbert Wermes

Abstract: Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip s… ▽ More Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of $10^{15}$ $n_{eq}/cm^2$. The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > $10^7$ noise occupancy was as high as 98.9 % after NIEL irradiation. △ Less

Submitted 25 March, 2018; originally announced March 2018.

Production and Integration of the ATLAS Insertable B-Layer

Authors: B. Abbott, J. Albert, F. Alberti, M. Alex, G. Alimonti, S. Alkire, P. Allport, S. Altenheiner, L. Ancu, E. Anderssen, A. Andreani, A. Andreazza, B. Axen, J. Arguin, M. Backhaus, G. Balbi, J. Ballansat, M. Barbero, G. Barbier, A. Bassalat, R. Bates, P. Baudin, M. Battaglia, T. Beau, R. Beccherle , et al. (352 additional authors not shown)

Abstract: During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i… ▽ More During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector. △ Less

Submitted 6 June, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Comments: 90 pages in total. Author list: ATLAS IBL Collaboration, starting page 2. 69 figures, 20 tables. Published in Journal of Instrumentation. All figures available at: https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PLOTS/PIX-2018-001

Journal ref: Journal of Instrumentation JINST 13 T05008 (2018)

Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Authors: Piotr Rymaszewski, Marlon Barbero, Siddharth Bhat, Patrick Breugnon, Ivan Caicedo, Zongde Chen, Yavuz Degerli, Stephanie Godiot, Fabrice Guilloux, Claude Guyot, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Mohamed Lachkar, Patrick Pangaud, Alexandre Rozanov, Philippe Schwemling, Maxence Vandenbroucke, Tianyang Wang, Norbert Wermes

Abstract: This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a… ▽ More This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described followed by the simulation and measurement results. △ Less

Submitted 15 November, 2017; v1 submitted 3 November, 2017; originally announced November 2017.

Study of prototypes of LFoundry active and monolithic CMOS pixels sensors for the ATLAS detector

Authors: L. Vigani, D. Bortoletto, L. Ambroz, R. Plackett, T. Hemperek, P. Rymaszewski, T. Wang, H. Krueger, T. Hirono, I. Caicedo Sierra, N. Wermes, M. Barbero, S. Bhat, P. Breugnon, Z. Chen, S. Godiot, P. Pangaud, A. Rozanov

Abstract: High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recen… ▽ More High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, and the first fully monolithic prototype MONOPIX will be shown. △ Less

Submitted 18 October, 2017; originally announced October 2017.

Comments: 11 pages, 12 figures, conference proceeding for PSD11

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Authors: T. Wang, M. Barbero, I. Berdalovic, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, R. Cardella, Z. Chen, Y. Degerli, N. Egidos, S. Godiot, F. Guilloux, T. Hemperek, T. Hirono, H. Krüger, T. Kugathasan, F. Hügging, C. A. Marin Tobon, K. Moustakas, P. Pangaud, P. Schwemling, H. Pernegger, D-L. Pohl, A. Rozanov , et al. (3 additional authors not shown)

Abstract: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo… ▽ More Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. △ Less

Submitted 29 September, 2017; originally announced October 2017.

Comments: International Workshop on Radiation Imaging Detectors 2017

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

Authors: Toko Hirono, Marlon Barbero, Patrick Breugnon, Stéphanie Godiot, Tomasz Hemperek, Fabian Hügging, Jens Janssen, Hans Krüger, Jian Liu, Patrick Pangaud, Ivan Perić, David-Leon Pohl, Alexandre Rozanov, Piotr Rymaszewski, Norbert Wermes

Abstract: Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS… ▽ More Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 kΩcm that was thinned to 100 μm. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively. △ Less

Submitted 9 December, 2016; originally announced December 2016.

Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

Authors: Piotr Rymaszewski, Marlon Barbero, Patrick Breugnon, Stépahnie Godiot, Laura Gonella, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Jian Liu, Patrick Pangaud, Ivan Peric, Alexandre Rozanov, Anqing Wang, Norbert Wermes

Abstract: The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prot… ▽ More The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Comments: 9 pages, 9 figures, TWEPP 2015 Conference, submitted to JINST

Development of a PCI Express Based Readout Electronics for the XPAD3 X-Ray Photon Counting Image

Authors: A. Dawiec, B. Dinkespiler, P. Breugnon, K. Arnaud, P. -Y. Duval, S. Godiot, S. Hustache, K. Medjoubi, J. -F. Berar, N. Boudet, C. Morel, F. Bompard

Abstract: XPAD3 is a large surface X-ray photon counting imager with high count rates, large counter dynamics and very fast data readout. Data are readout in parallel by a PCI Express interface using DMA transfer. The readout frame rate of the complete detector comprising 0.5 MPixels amounts to 500 images per second without dead-time. XPAD3 is a large surface X-ray photon counting imager with high count rates, large counter dynamics and very fast data readout. Data are readout in parallel by a PCI Express interface using DMA transfer. The readout frame rate of the complete detector comprising 0.5 MPixels amounts to 500 images per second without dead-time. △ Less

Submitted 21 March, 2011; originally announced March 2011.

Comments: 17th Real-Time Conference on Real-Time Computer Applications in Nuclear, Particle and Plasma Physics, Lisbonne : Portugal (2010)