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nanoTesla magnetometry with the silicon vacancy in silicon carbide
Authors:
John B. S. Abraham,
Cameron Gutgsell,
Dalibor Todorovski,
Scott Sperling,
Jacob E. Epstein,
Brian S. Tien-Street,
Timothy M. Sweeney,
Jeremiah J. Wathen,
Elizabeth A. Pogue,
Peter G. Brereton,
Tyrel M. McQueen,
Wesley Frey,
B. D. Clader,
Robert Osiander
Abstract:
Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near telecom photoemission, high spin number, and nearly temperature indepen…
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Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near telecom photoemission, high spin number, and nearly temperature independent ground state zero field splitting. We report the realization of nanoTesla shot-noise limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieved a sensitivity of 3.5 nT/$\sqrt{Hz}$. This was accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a Watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.
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Submitted 17 June, 2021; v1 submitted 2 November, 2020;
originally announced November 2020.
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Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
Authors:
P. G. Brereton,
D. Puent,
J. Vanhoy,
E. R. Glaser,
S. G. Carter
Abstract:
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of single spin qubit with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies gen…
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Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of single spin qubit with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies generated via proton irradiation as a function of implantation depth. We show clear evidence of dephasing interactions between the silicon vacancies and the spin environment of the bulk crystal. This result will inform further routes toward fabrication of scalable silicon carbide devices and studies of spin interactions of in high-density ensembles of defects.
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Submitted 14 October, 2019; v1 submitted 26 December, 2018;
originally announced December 2018.
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Cavity-stimulated Raman emission from a single quantum dot spin
Authors:
Timothy M. Sweeney,
Samuel G. Carter,
Allan S. Bracker,
Mi** Kim,
Chul Soo Kim,
Lily Yang,
Patrick Vora,
Peter G. Brereton,
Erin R. Cleveland,
Daniel Gammon
Abstract:
Solid state quantum emitters have shown strong potential for applications in quantum information, but spectral inhomogeneity of these emitters poses a significant challenge. We address this issue in a cavity-quantum dot system by demonstrating cavity-stimulated Raman spin flip emission. This process avoids populating the excited state of the emitter and generates a photon that is Raman shifted fro…
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Solid state quantum emitters have shown strong potential for applications in quantum information, but spectral inhomogeneity of these emitters poses a significant challenge. We address this issue in a cavity-quantum dot system by demonstrating cavity-stimulated Raman spin flip emission. This process avoids populating the excited state of the emitter and generates a photon that is Raman shifted from the laser and enhanced by the cavity. The emission is spectrally narrow and tunable over a range of at least 125 GHz, which is two orders of magnitude greater than the natural linewidth. We obtain the regime in which the Raman emission is spin-dependent, which couples the photon to a long-lived electron spin qubit. This process can enable an efficient, tunable source of indistinguishable photons and deterministic entanglement of distant spin qubits in a photonic crystal quantum network.
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Submitted 18 February, 2014;
originally announced February 2014.
