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Degradation of Ta$_2$O$_5$ / SiO$_2$ Dielectric Cavity Mirrors in Ultra-High Vacuum
Authors:
Alyssa Rudelis,
Beili Hu,
Josiah Sinclair,
Edita Bytyqi,
Alan Schwartzman,
Roberto Brenes,
Tamar Kadosh Zhitomirsky,
Monika Schleier-Smith,
Vladan Vuletić
Abstract:
In order for optical cavities to enable strong light-matter interactions for quantum metrology, networking, and scalability in quantum computing systems, their mirrors must have minimal losses. However, high-finesse dielectric cavity mirrors can degrade in ultra-high vacuum (UHV), increasing the challenges of upgrading to cavity-coupled quantum systems. We observe the optical degradation of high-f…
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In order for optical cavities to enable strong light-matter interactions for quantum metrology, networking, and scalability in quantum computing systems, their mirrors must have minimal losses. However, high-finesse dielectric cavity mirrors can degrade in ultra-high vacuum (UHV), increasing the challenges of upgrading to cavity-coupled quantum systems. We observe the optical degradation of high-finesse dielectric optical cavity mirrors after high-temperature UHV bake in the form of a substantial increase in surface roughness. We provide an explanation of the degradation through atomic force microscopy (AFM), X-ray fluorescence (XRF), selective wet etching, and optical measurements. We find the degradation is explained by oxygen reduction in Ta$_2$O$_5$ followed by growth of tantalum sub-oxide defects with height to width aspect ratios near ten. We discuss the dependence of mirror loss on surface roughness and finally give recommendations to avoid degradation to allow for quick adoption of cavity-coupled systems.
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Submitted 31 August, 2023;
originally announced September 2023.
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Map** the Diffusion Tensor in Microstructured Perovskites
Authors:
Roberto Brenes,
Dane W. deQuilettes,
Richard Swartwout,
Abdullah Y. Alsalloum,
Osman M. Bakr,
Vladimir Bulović
Abstract:
Understanding energy transport in semiconductors is critical for design of electronic and optoelectronic devices. Semiconductor material properties such as charge carrier mobility or diffusion length are measured in bulk crystals and determined using models that describe transport behavior in homogeneous media, where structural boundary effects are minimal. However, most emerging semiconductors ex…
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Understanding energy transport in semiconductors is critical for design of electronic and optoelectronic devices. Semiconductor material properties such as charge carrier mobility or diffusion length are measured in bulk crystals and determined using models that describe transport behavior in homogeneous media, where structural boundary effects are minimal. However, most emerging semiconductors exhibit microscale heterogeneity. Therefore, experimental techniques with high spatial resolution paired with models that capture anisotropy and domain boundary behavior are needed. We develop a diffusion tensor-based framework to analyze experimental photoluminescence (PL) diffusion maps accounting for material microstructure. Specifically, we quantify both carrier transport and recombination in single crystal and polycrystalline lead halide perovskites by globally fitting diffusion maps, with spatial, temporal, and PL intensity data. We reveal a 29% difference in principal diffusion coefficients and alignment between electronically coupled grains for CH3NH3PbI3 polycrystalline films. This framework allows for understanding and optimizing anisotropic energy transport in heterogeneous materials.
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Submitted 18 September, 2022;
originally announced September 2022.
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Reduced Recombination via Tunable Surface Fields in Perovskite Solar Cells
Authors:
Dane W. deQuilettes,
Jason Jungwan Yoo,
Roberto Brenes,
Felix Utama Kosasih,
Madeleine Laitz,
Benjia Dak Dou,
Daniel J. Graham,
Kevin Ho,
Seong Sik Shin,
Caterina Ducati,
Moungi Bawendi,
Vladimir Bulović
Abstract:
The ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering has become an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification of emerging halide perovskites with quasi-2D heterostructures is now ubiquitous to achieve PV power conversion efficiencies (PCEs) > 22% and has enabl…
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The ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering has become an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification of emerging halide perovskites with quasi-2D heterostructures is now ubiquitous to achieve PV power conversion efficiencies (PCEs) > 22% and has enabled single-junction PV devices to reach 25.7%, yet a fundamental understanding to how these treatments function is still generally lacking. This has established a bottleneck for maximizing beneficial improvements as no concrete selection and design rules currently exist. Here we uncover a new type of tunable passivation strategy and mechanism found in perovskite PV devices that were the first to reach the > 25% PCE milestone, which is enabled by surface treating a bulk perovskite layer with hexylammonium bromide (HABr). We uncover the simultaneous formation of an iodide-rich 2D layer along with a Br halide gradient achieved through partial halide exchange that extends from defective surfaces and grain boundaries into the bulk layer. We demonstrate and directly visualize the tunability of both the 2D layer thickness, halide gradient, and band structure using a unique combination of depth-sensitive nanoscale characterization techniques. We show that the optimization of this interface can extend the charge carrier lifetime to values > 30 μs, which is the longest value reported for a direct bandgap semiconductor (GaAs, InP, CdTe) over the past 50 years. Importantly, this work reveals an entirely new strategy and knob for optimizing and tuning recombination and charge transport at semiconductor interfaces and will likely establish new frontiers in achieving the next set of perovskite device performance records.
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Submitted 9 November, 2022; v1 submitted 15 April, 2022;
originally announced April 2022.
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Processing Induced Distinct Charge Carrier Dynamics of Bulky Organic Halide Treated Perovskites
Authors:
Benjia Dak Dou,
Dane W. deQuilettes,
Madeleine Laitz,
Roberto Brenes,
Lili Wang,
Ella L Wassweiler,
Richard Swartwout,
Jason J. Yoo,
Melany Sponseller,
Noor Titan Putri Hartono,
Shi**g Sun,
Tonio Buonassisi,
Moungi G Bawendi,
Vladimir Bulovic
Abstract:
State-of-the-art metal halide perovskite-based photovoltaics often employ organic ammonium salts, AX, as a surface passivator, where A is a large organic cation and X is a halide. These surface treatments passivate the perovskite by forming layered perovskites (e.g., A2PbX4) or by AX itself serving as a surface passivation agent on the perovskite photoactive film. It remains unclear whether layere…
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State-of-the-art metal halide perovskite-based photovoltaics often employ organic ammonium salts, AX, as a surface passivator, where A is a large organic cation and X is a halide. These surface treatments passivate the perovskite by forming layered perovskites (e.g., A2PbX4) or by AX itself serving as a surface passivation agent on the perovskite photoactive film. It remains unclear whether layered perovskites or AX is the ideal passivator due to an incomplete understanding of the interfacial impact and resulting photoexcited carrier dynamics of AX treatment. In the present study, we use TRPL measurements to selectively probe the different interfaces of glass/perovskite/AX to demonstrate the vastly distinct interfacial photoexcited state dynamics with the presence of A2PbX4 or AX. Coupling the TRPL results with X-ray diffraction and nanoscale microscopy measurements, we find that the presence of AX not only passivates the traps at the surface and the grain boundaries, but also induces an α/δ-FAPbI3 phase mixing that alters the carrier dynamics near the glass/perovskite interface and enhances the photoluminescence quantum yield. In contrast, the passivation with A2PbI4 is mostly localized to the surface and grain boundaries near the top surface where the availability of PbI2 directly determines the formation of A2PbI4. Such distinct mechanisms significantly impact the corresponding solar cell performance, and we find AX passivation that has not been converted to a layered perovskite allows for a much larger processing window (e.g., larger allowed variance of AX concentration which is critical for improving the eventual manufacturing yield) and more reproducible condition to realize device performance improvements, while A2PbI4 as a passivator yields a much narrower processing window. We expect these results to enable a more rational route for develo** AX for perovskite.
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Submitted 11 March, 2022;
originally announced March 2022.
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Accurate Determination of Semiconductor Diffusion Coefficient Using Optical Microscopy
Authors:
Dane W. deQuilettes,
Roberto Brenes,
Madeleine Laitz,
Brandon T. Motes,
Mikhail M. Glazov,
Vladimir Bulovic
Abstract:
Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic devices. D is often determined by fitting a time-resolved expanding carrier profile after optical excitation using a Mean Squared Displacement (MSD) Model. Alt…
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Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic devices. D is often determined by fitting a time-resolved expanding carrier profile after optical excitation using a Mean Squared Displacement (MSD) Model. Although this approach has gained widespread adoption, its utilization can significantly overestimate D due to the non-linear recombination processes that artificially broaden the carrier distribution profile. Here, we simulate diffusive processes in both excitonic and free carrier semiconductors and present revised MSD Models that take into account second-order (i.e. bimolecular) and third-order (i.e. Auger) processes to accurately recover D for various types of materials. For perovskite thin films, utilization of these models can reduce fitting error by orders of magnitude, especially for commonly deployed excitation conditions where carrier densities are > 5x10$^1$$^6$ cm$^-$$^3$. In addition, we show that commonly-deployed MSD Models are not well-suited for the study of films with microstructure, especially when boundary behavior is unknown and feature sizes are comparable to the diffusion length. Finally, we find that photon recycling only impacts energy carrier profiles on ultrashort time scales or for materials with fast radiative decay times. We present clear strategies to investigate energy transport in disordered materials for more effective design and optimization of electronic and optoelectronic devices.
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Submitted 14 January, 2021; v1 submitted 25 March, 2020;
originally announced March 2020.
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Coherent Band-Edge Oscillations and Dynamic LO Phonon Mode Splitting as Evidence for Polaronic Coupling in Perovskites
Authors:
Z. Liu,
C. Vaswani,
L. Luo,
D. Cheng,
X. Yang,
X. Zhao,
Y. Yao,
Z. Song,
R. Brenes,
R. Kim,
J. Jean,
V. Bulovic,
Y. Yan,
K. -M. Ho,
J. Wang
Abstract:
The coherence of collective modes, such as phonons, and their modulation of the electronic states are long sought in complex systems, which is a cross-cutting issue in photovoltaics and quantum electronics. In photovoltaic cells and lasers based on metal halide perovskites, the presence of polaronic coupling, i.e., photocarriers dressed by the macroscopic motion of charged lattice, assisted by ter…
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The coherence of collective modes, such as phonons, and their modulation of the electronic states are long sought in complex systems, which is a cross-cutting issue in photovoltaics and quantum electronics. In photovoltaic cells and lasers based on metal halide perovskites, the presence of polaronic coupling, i.e., photocarriers dressed by the macroscopic motion of charged lattice, assisted by terahertz (THz) longitudinal optical (LO) phonons, has been intensely studied yet still debated. This may be key for explaining the remarkable properties of the perovskite materials, e.g., defect tolerance, long charge lifetimes and diffusion length. Here we use the intense single-cycle THz pulse with the peak electric field up to $E_{THz}=$1000\,kV/cm to drive coherent band-edge oscillations at room temperature in CH$_3$NH$_3$PbI$_3$. We reveal the oscillatory behavior dominantly to a specific quantized lattice vibration mode at $ω_{\mathrm{LO}}\sim$4 THz, being both dipole and momentum forbidden. THz-driven coherent dynamics exhibits distinguishing features: the room temperature coherent oscillations at $ω_{\mathrm{LO}}$ longer than 1 ps in both single crystals and thin films; the {\em mode-selective} modulation of different band edge states assisted by electron-phonon ($e$-$ph$) interaction; {\em dynamic mode splitting} controlled by temperature due to entropy and anharmonicity of organic cations. Our results demonstrate intense THz-driven coherent band-edge modulation as a powerful probe of electron-lattice coupling phenomena and provide compelling implications for polaron correlations in perovskites.
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Submitted 19 February, 2020;
originally announced February 2020.
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State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point
Authors:
Roberto Brenes,
Madeleine Laitz,
Joel Jean,
Dane W. deQuilettes,
Vladimir Bulovic
Abstract:
Photon recycling is required for a solar cell to achieve an open-circuit voltage ($V_{OC}$) and power conversion efficiency (PCE) approaching the Shockley-Queisser theoretical limit. In metal halide perovskite solar cells, the achievable performance gains from photon recycling remain uncertain due to high variability in perovskite material quality and the non-radiative recombination rate ($k_{1}$)…
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Photon recycling is required for a solar cell to achieve an open-circuit voltage ($V_{OC}$) and power conversion efficiency (PCE) approaching the Shockley-Queisser theoretical limit. In metal halide perovskite solar cells, the achievable performance gains from photon recycling remain uncertain due to high variability in perovskite material quality and the non-radiative recombination rate ($k_{1}$). In this work, we study state-of-the-art $\textrm{Cs}_{0.05}(\textrm{MA}_{0.17}\textrm{FA}_{0.83})_{0.95}\textrm{Pb}(\textrm{I}_{0.83}\textrm{Br}_{0.17})_{3}$ films and analyze the impact of varying non-radiative recombination rates on photon recycling and device performance. Importantly, we predict the impact of photon recycling at the maximum power point (MPP), demonstrating an absolute PCE increase of up to 2.0% in the radiative limit, primarily due to a 77 mV increase in $V_{MPP}$. Even with finite non-radiative recombination, benefits from photon recycling can be achieved when non-radiative lifetimes and external LED electroluminescence efficiencies measured at open-circuit, $Q_{e}^{LED}(\textrm{V}_{OC})$, exceed 2 $μ$s and 10%, respectively. This analysis clarifies the opportunity to fully exploit photon recycling to push the real-world performance of perovskite solar cells toward theoretical limits.
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Submitted 24 January, 2019;
originally announced January 2019.
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Local Strain Heterogeneity Influences the Optoelectronic Properties of Halide Perovskites
Authors:
Timothy W. Jones,
Anna Osherov,
Mejd Alsari,
Melany Sponseller,
Benjamin C. Duck,
Young-Kwang Jung,
Charles Settens,
Farnaz Niroui,
Roberto Brenes,
Camelia V. Stan,
Yao Li,
Mojtaba Abdi-Jalebi,
Nobumichi Tamura,
J. Emyr Macdonald,
Manfred Burghammer,
Richard H. Friend,
Vladimir Bulović,
Aron Walsh,
Gregory J. Wilson,
Samuele Lilliu,
Samuel D. Stranks
Abstract:
Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of…
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Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. By combining scanning X-ray diffraction beamlines at two different synchrotrons with high-resolution transmission electron microscopy, we reveal levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). We find that local strain is associated with enhanced defect concentrations, and correlations between the local structure and time-resolved photoluminescence reveal that these strain-related defects are the cause of non-radiative recombination. We reveal a direct connection between defect concentrations and non-radiative losses, as well as complex heterogeneity across multiple length scales, shedding new light on the presence and influence of structural defects in halide perovskites.
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Submitted 15 May, 2018; v1 submitted 3 March, 2018;
originally announced March 2018.
