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Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Authors:
F. Giannazzo,
R. Dagher,
E. Schilirò,
S. E. Panasci,
G. Greco,
G. Nicotra,
F. Roccaforte,
S. Agnello,
J. Brault,
Y. Cordier,
A. Michon
Abstract:
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350°C. After optimization of the C3H8 flow rate, a uniform and conformal Gr cover…
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The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350°C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy (XPS) revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a 2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS), which also showed the presence of a bilayer of Gr with partial sp2/sp3 hybridization. Raman spectra indicated that the deposited Gr is nanocrystalline (with domain size 7 nm) and compressively strained. A Gr sheet resistance of 15.8 kOhm/sq was evaluated by four-point-probe measurements, consistently with the nanocrystalline nature of these films. Furthermore, nanoscale resolution current map** by conductive atomic force microscopy (C-AFM) indicated local variations of the Gr carrier density at a mesoscopic scale, which can be ascribed to changes in the charge transfer from the substrate due to local oxidation of AlGaN or to the presence of Gr wrinkles.
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Submitted 18 September, 2020;
originally announced September 2020.
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Al$_{5+α}$Si$_{5+δ}$N$_{12}$, a new Nitride compound
Authors:
R. Dagher,
L. Lymperakis,
V. Delaye,
L. Largeau,
A. Michon,
J Brault,
P. Vennegues
Abstract:
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT…
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We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>. The first one exhibits a $\times$3 periodicity along <10-10> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by equal number of Si and Al atoms. Assuming a semiconducting alloy, which is expected to have a wide band gap, a range of stoichiometries is proposed, Al$_{5+α}$Si$_{5+δ}$N$_{12}$, with $α$ being between 0 and 1/3 and $δ$ between 0 and 1/4.
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Submitted 22 March, 2019;
originally announced March 2019.
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Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
Authors:
Hugo Henck,
Zeineb Ben Aziza,
Olivia Zill,
Debora Pierucci,
Carl H. Naylor,
Mathieu G. Silly,
Noelle Gogneau,
Fabrice Oehler,
Stephane Collin,
Julien Brault,
Fausto Sirotti,
François Bertran,
Patrick Le Fèvre,
Stéphane Berciaud,
A. T Charlie Johnson,
Emmanuel Lhuillier,
Julien E. Rault,
Abdelkarim Ouerghi
Abstract:
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray p…
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Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.
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Submitted 8 June, 2018;
originally announced June 2018.
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A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure
Authors:
Ji-yuan Zheng,
Lai Wang,
Di Yang,
Jia-dong Yu,
Xiao Meng,
Yan-xiong E,
Chao Wu,
Zhi-biao Hao,
Chang-zheng Sun,
Bing Xiong,
Yi Luo,
Yan-jian Han,
Jian Wang,
Hong-tao Li,
Julien Brault,
Samuel Matta,
Mohamed Al Khalfioui,
Jian-chang Yan,
Tong-bo Wei,
Yun Zhang,
Jun-xi Wang
Abstract:
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under br…
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Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. and a recorded high gain (10^4) tested under constant bias is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path with high commercial value to realize highly sensitive avalanche devices working under constant bias like PMT.
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Submitted 30 July, 2016;
originally announced August 2016.
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Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots
Authors:
D. Elmaghraoui,
M. Triki,
S. Jaziri M. Leroux,
J. Brault
Abstract:
A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is proposed. A numerical method assuming a realistic shape of the dots and including the built-in electric field effects is developed to calculate their energy structure and hence their optical absorption. The electron and hole spectra show the existence of a set of quasi-boun…
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A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is proposed. A numerical method assuming a realistic shape of the dots and including the built-in electric field effects is developed to calculate their energy structure and hence their optical absorption. The electron and hole spectra show the existence of a set of quasi-bound states that does not originate from the wetting layer, and plays a crucial role in the observed absorption spectrum of the GaN/(Al,Ga)N dots. Transitions involving these quasi-bound states and wetting layer states give a sufficient explanation for the observed continuum absorption background. The properties of this absorption band, especially its extension, depend strongly on the dot's size. Our simulation provides a natural explanation of the experimental luminescence excitation spectra of ensembles of dots of different heights. Our theoretical model can be extended to cases where the confinement potentials are complicated by the presence of a stronger electric field.
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Submitted 24 March, 2014;
originally announced March 2014.
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Gallium adsorption on (0001) GaN surfaces
Authors:
C. Adelmann,
J. Brault,
G. Mula,
B. Daudin,
L. Lymperakis,
J. Neugebauer
Abstract:
We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function o…
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We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the im**ing Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.
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Submitted 7 April, 2003;
originally announced April 2003.
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A New Multiplet Table for Fe
Authors:
I. G. Nave,
S. Johansson,
R. C. M. Learner,
A. P. Thorne,
J. W. Brault
Abstract:
We have recorded spectra of iron-neon and iron-argon hollow cathode lamps in the region 1700A -- 5um (59000 -- 2000cm-1), with Fourier transform (FT) spectrometers at the National Solar Observatory, Tucson, Arizona, U.S.A. and Imperial College, London, U.K., and with a high resolution grating spectrograph at the National Institute of Standards and Technology, Gaithersburg, U.S.A. The uncertainty…
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We have recorded spectra of iron-neon and iron-argon hollow cathode lamps in the region 1700A -- 5um (59000 -- 2000cm-1), with Fourier transform (FT) spectrometers at the National Solar Observatory, Tucson, Arizona, U.S.A. and Imperial College, London, U.K., and with a high resolution grating spectrograph at the National Institute of Standards and Technology, Gaithersburg, U.S.A. The uncertainty of the strongest lines in the FT spectra is <0.002cm-1 (0.2mA at 3000A; 8mA at 2um). Pressure and current-dependent shifts are <0.001cm-1 for transitions between low lying levels, increasing to 0.006 cm-1 for transitions between the most highly excited levels. We report 28 new energy levels of Fe I and revised values of another 818 levels. We have identified 9501 lines as due to 9759 transitions in Fe I, and these are presented in the form of a new multiplet table and finding list. This compares with the 5500 lines due to 467 energy levels in the multiplet tables of Moore (1950, 1959). The biggest increase is in the near ultraviolet and near infra-red, and many of the new lines are present in the solar spectrum. Experimental log(gf) values are included where available. A further 125 unidentified lines due to Fe I are given.
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Submitted 20 April, 1994;
originally announced April 1994.
