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Self-referencing photothermal common-path interferometry to measure absorption of Si3N4 membranes for laser-light sails
Authors:
Demeng Feng,
Tanuj Kumar,
Shenwei Yin,
Merlin Mah,
Phyo Lin,
Margaret Fortman,
Gabriel R. Jaffe,
Chenghao Wan,
Hongyan Mei,
Yuzhe Xiao,
Ron Synowicki,
Ronald J. Warzoha,
Victor W. Brar,
Joseph J. Talghader,
Mikhail A. Kats
Abstract:
Laser-light sails are a spacecraft concept wherein lightweight "sails" are propelled to high speeds by lasers with high intensities. The sails must comprise materials with low optical loss, to minimize the risk of laser damage. Stoichiometric silicon nitride (Si$_3$N$_4$) is a candidate material with low loss in the near infrared, but the precise absorption coefficient has not been characterized i…
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Laser-light sails are a spacecraft concept wherein lightweight "sails" are propelled to high speeds by lasers with high intensities. The sails must comprise materials with low optical loss, to minimize the risk of laser damage. Stoichiometric silicon nitride (Si$_3$N$_4$) is a candidate material with low loss in the near infrared, but the precise absorption coefficient has not been characterized in the membrane form-factor needed for sails. We use photothermal common-path interferometry (PCI), a sensitive pump-probe technique, to measure the absorption coefficient of stoichiometric and nonstoichiometric silicon nitride. To calibrate PCI measurements of membranes, we developed a self-referencing technique where a measurement is performed twice: once on a bare membrane, and a second time with a monolayer of graphene deposited on the membrane. The absorption of the sample with graphene can be measured by both PCI and more-conventional spectroscopic techniques, enabling the calibration of the PCI measurement. We find that with an absorption coefficient of (2.09 $\pm$ 0.76) $\times$ 10$^{-2}$ cm$^{-1}$ at 1064 nm, Si$_3$N$_4$ is a suitable laser-sail material for laser intensities as high as ~10 GW/m$^{2}$, which have been proposed for some laser-sail missions, while silicon-rich SiN$_x$ (x~1), with an absorption coefficient of 7.94 $\pm$ 0.50 cm$^{-1}$, is unlikely to survive such high laser intensities.
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Submitted 5 April, 2024;
originally announced April 2024.
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Electrostatic Steering of Thermal Emission with Active Metasurface Control of Delocalized Modes
Authors:
Joel Siegel,
Shinho Kim,
Margaret Fortman,
Chenghao Wan,
Mikhail A. Kats,
Phillip W. C. Hon,
Luke Sweatlock,
Min Seok Jang,
Victor Watson Brar
Abstract:
We theoretically describe and experimentally demonstrate a graphene-integrated metasurface structure that enables electrically-tunable directional control of thermal emission. This device consists of a dielectric slab that acts as a Fabry-Perot (F-P) resonator supporting long-range delocalized modes bounded on one side by an electrostatically tunable metal-graphene metasurface. By varying the Ferm…
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We theoretically describe and experimentally demonstrate a graphene-integrated metasurface structure that enables electrically-tunable directional control of thermal emission. This device consists of a dielectric slab that acts as a Fabry-Perot (F-P) resonator supporting long-range delocalized modes bounded on one side by an electrostatically tunable metal-graphene metasurface. By varying the Fermi level of the graphene, the accumulated phase of the F-P mode is shifted, which changes the direction of absorption and emission at a fixed frequency. We directly measure the frequency- and angle-dependent emissivity of the thermal emission from a fabricated device heated to 250$^{\circ}$. Our results show that electrostatic control allows the thermal emission at 6.61 $μ$m to be continuously steered over 16$^{\circ}$, with a peak emissivity maintained above 0.9. We analyze the dynamic behavior of the thermal emission steerer theoretically using a Fano interference model, and use the model to design optimized thermal steerer structures.
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Submitted 22 April, 2024; v1 submitted 15 August, 2023;
originally announced August 2023.
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The Effect of Dust and Hotspots on the Thermal Stability of Laser Sails
Authors:
Gabriel R. Jaffe,
Gregory R. Holdman,
Min Seok Jang,
Demeng Feng,
Mikhail A. Kats,
Victor Watson Brar
Abstract:
Laser sails propelled by gigawatt-scale ground-based laser arrays have the potential to reach relativistic speeds, traversing the solar system in hours and reaching nearby stars in years. Here, we describe the danger interplanetary dust poses to the survival of a laser sail during its acceleration phase. We show through multi-physics simulations how localized heating from a single optically absorb…
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Laser sails propelled by gigawatt-scale ground-based laser arrays have the potential to reach relativistic speeds, traversing the solar system in hours and reaching nearby stars in years. Here, we describe the danger interplanetary dust poses to the survival of a laser sail during its acceleration phase. We show through multi-physics simulations how localized heating from a single optically absorbing dust particle on the sail can initiate a thermal-runaway process that rapidly spreads and destroys the entire sail. We explore potential mitigation strategies, including increasing the in-plane thermal conductivity of the sail to reduce the peak temperature at hotspots and isolating the absorptive regions of the sail which can burn away individually.
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Submitted 22 June, 2023; v1 submitted 24 March, 2023;
originally announced March 2023.
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Enhancing two-photon spontaneous emission in rare earths using graphene and graphene nanoribbons
Authors:
Colin Whisler,
Gregory Holdman,
D. D. Yavuz,
Victor W. Brar
Abstract:
The enhancement of two-photon spontaneous emission (2PSE) from trivalent and divalent rare earth ions in proximity to graphene and graphene nanoribbons is calculated for achievable experimental conditions using a combination of finite difference time domain simulations and direct computation of transition rates between energy levels in rare earths. For Er$^{3+}$, we find that the 2PSE rate is init…
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The enhancement of two-photon spontaneous emission (2PSE) from trivalent and divalent rare earth ions in proximity to graphene and graphene nanoribbons is calculated for achievable experimental conditions using a combination of finite difference time domain simulations and direct computation of transition rates between energy levels in rare earths. For Er$^{3+}$, we find that the 2PSE rate is initially 8 orders lower than the single-photon spontaneous emission rate but that, with enhancement, 2PSE can reach 2.5% of the overall decay. When graphene nanoribbons are used, we also show that the emission of free-space photon pairs from Er$^{3+}$ at 3 - 3.2 $μ$m via 2PSE can be increased by $\sim 400$. Our calculations show significantly less relative graphene-enhanced 2PSE than previous works, and we attribute this variation to differences in emitter size and assumed graphene mobility. We also show that the internal energy structure of the ion can have an impact on degree of 2PSE enhancement achievable and find that divalent rare earths are more favorable.
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Submitted 22 December, 2022;
originally announced December 2022.
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Thermal runaway of silicon-based laser sails
Authors:
Gregory R. Holdman,
Gabriel R. Jaffe,
Min Seok Jang,
Demeng Feng,
Mikhail A. Kats,
Victor Watson Brar
Abstract:
Laser sail-based spacecraft -- where a powerful earth-based laser propels a lightweight outer-space vehicle -- have been recently proposed by the Breakthrough Starshot Initiative as a means of reaching relativistic speeds for interstellar spacetravel. The laser intensity at the sail required for this task is at least 1 GW$\cdot$m$^{-2}$ and, at such high intensities, thermal management of the sail…
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Laser sail-based spacecraft -- where a powerful earth-based laser propels a lightweight outer-space vehicle -- have been recently proposed by the Breakthrough Starshot Initiative as a means of reaching relativistic speeds for interstellar spacetravel. The laser intensity at the sail required for this task is at least 1 GW$\cdot$m$^{-2}$ and, at such high intensities, thermal management of the sail becomes a significant challenge even when using materials with low absorption coefficients. Silicon has been proposed as one leading candidate material for the sail due to its low sub-bandgap absorption and high index of refraction, which allows for low-mass-density designs. However, here we show that the temperature-dependent bandgap of silicon combined with two-photon absorption processes can lead to thermal runaway for even the most optimistic viable assumptions of the material quality. From our calculations, we set bounds on the maximum laser intensities that can be used for a thermally stable, Si-based laser sail.
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Submitted 12 October, 2021;
originally announced October 2021.
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A Simple Numerical Method for Evaluating Heat Dissipation from Curved Wires with Periodic Applied Heating
Authors:
Gabriel R. Jaffe,
Victor W. Brar,
Max G. Lagally,
Mark A. Eriksson
Abstract:
In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent expe…
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In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent experimental work has demonstrated that in some cases curved-wire geometries can be used without introducing detectable systematic error. We describe a general numerical method that can be used to calculate the temperature of three-omega heating wires with arbitrary wire geometries. This method provides experimentalists with a simple quantitative procedure for calculating how large the systematic error caused by a particular wire asymmetry will be. We show calculations of two useful cases: a straight wire with a single bend of arbitrary angle and a wire that forms a circle. We find that the amplitude of the in-phase temperature oscillations near a wire that forms a circle differs from the prediction using the analytic straight-line source solution by $<$12%, provided that the thermal penetration depth is less than ten times the radius of curvature of the wire path. The in-phase temperature amplitude 1.5 wire widths away from a 90$^{\circ}$ bend in a wire is within 11% of the straight-line source prediction for all penetration depths greater than the wire width. Our calculations indicate that the straight-line source solution breaks down significantly when the wire bend angle is less than 45$^{\circ}$.
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Submitted 8 October, 2021;
originally announced October 2021.
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Imaging the breaking of electrostatic dams in graphene for ballistic and viscous fluids
Authors:
Zachary J. Krebs,
Wyatt A. Behn,
Songci Li,
Keenan J. Smith,
Kenji Watanabe,
Takashi Taniguchi,
Alex Levchenko,
Victor W. Brar
Abstract:
The flow of charge carriers in materials can, under some circumstances, mimic the flow of viscous fluids. In order to visualize the consequences of such effects, new methodologies must be developed that can probe the quasiparticle flow profile with nm-scale resolution as the geometric parameters of the system are continuously evolved. In this work, scanning tunneling potentiometry (STP) is used to…
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The flow of charge carriers in materials can, under some circumstances, mimic the flow of viscous fluids. In order to visualize the consequences of such effects, new methodologies must be developed that can probe the quasiparticle flow profile with nm-scale resolution as the geometric parameters of the system are continuously evolved. In this work, scanning tunneling potentiometry (STP) is used to image quasiparticle flow around engineered electrostatic barriers in graphene/hBN heterostructures. Measurements are performed as electrostatic dams - defined by lateral pn-junction barriers - are broken within the graphene sheet, and carriers move through conduction channels with physical widths that vary continuously from pinch-off to um-scale. Local, STP measurements of the electrochemical potential allow for direct characterization of the evolving flow profile, which we compare to finite-element simulations of a Stokesian fluid with varying parameters. Our results reveal distinctly non-Ohmic flow profiles, with charge dipoles forming across barriers due to carrier scattering and accumulation on the upstream side, and depletion downstream. Conductance measurements of individual channels, meanwhile, reveal that at low temperatures the quasiparticle flow is ballistic, but as the temperature is raised there is a Knudsen-to-Gurzhi regime crossover where the fluid becomes viscous and the channel conductance exceeds the ballistic limit set by Sharvin conductance. These results provide a clear illustration of how carrier flow in a Fermi fluid evolves as a function of carrier density, channel width, and temperature. They also demonstrate how STP can be used to extract key parameters of quasiparticle transport, with a spatial resolution that exceeds that of other methods by orders of magnitude.
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Submitted 14 June, 2021;
originally announced June 2021.
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Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride
Authors:
Gabriel R. Jaffe,
Keenan J. Smith,
Kenji Watanabe,
Takashi Taniguchi,
Max G. Lagally,
Mark A. Eriksson,
Victor W. Brar
Abstract:
Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon…
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Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon mean free paths in hBN have not been measured. We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals. We find that the thermal conductivity is extremely sensitive to film thickness. We measure a forty-fold increase in the cross-plane thermal conductivity between 7 nm and 585 nm flakes at 295 K. We attribute the large increase in thermal conductivity with increasing thickness to contributions from phonons with long mean free paths (MFPs), spanning many hundreds of nanometers in the thickest flakes. When planar twist interfaces are introduced into the crystal by mechanically stacking multiple thin flakes, the cross-plane thermal conductivity of the stack is found to be a factor of seven below that of individual flakes with similar total thickness, thus providing strong evidence that phonon scattering at twist boundaries limits the maximum phonon MFPs. These results have important implications for hBN integration in nanoelectronics and improve our understanding of thermal transport in two-dimensional materials.
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Submitted 8 October, 2021; v1 submitted 12 March, 2021;
originally announced March 2021.
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Scalable near-infrared graphene plasmonic resonators exhibiting strong non-local and electron quantization effects
Authors:
Joel. F. Siegel,
Jonathan H. Dwyer,
Anjali Suresh,
Nathaniel S. Safron,
Margaret Fortman,
Chenghao Wan,
Jonathan W. Choi,
Wei Wei,
Vivek Saraswat,
Wyatt A. Behn,
Mikhail A. Kats,
Michael S. Arnold,
Padma Gopalan,
Victor W. Brar
Abstract:
Graphene plasmonic resonators have been broadly studied in the terahertz and mid-infrared ranges because of their electrical tunability and large confinement factors which can enable dramatic enhancement of light-matter coupling. In this work, we demonstrate that the characteristic scaling laws of graphene plasmons change for smaller (< 40 nm) plasmonic wavelengths, expanding the operational frequ…
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Graphene plasmonic resonators have been broadly studied in the terahertz and mid-infrared ranges because of their electrical tunability and large confinement factors which can enable dramatic enhancement of light-matter coupling. In this work, we demonstrate that the characteristic scaling laws of graphene plasmons change for smaller (< 40 nm) plasmonic wavelengths, expanding the operational frequencies of graphene plasmonic resonators into the near-infrared (NIR) and modifying their optical confinement properties. We utilize a novel bottom-up block copolymer lithography method that substantially improves upon top-down methods to create resonators as narrow as 12 nm over centimeter-scale areas. Measurements of these structures reveal that their plasmonic resonances are strongly influenced by non-local and quantum effects, which push their resonant frequency into the NIR (2.2 um), almost double the frequency of previous experimental works. The confinement factors of these resonators, meanwhile, reach 137 +/- 25, amongst the largest reported in literature for an optical cavity. While our findings indicate that the enhancement of some 'forbidden' transitions are an order of magnitude weaker than predicted, the combined NIR response and large confinement of these structures make them an attractive platform to explore ultra-strongly enhanced spontaneous emission.
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Submitted 18 May, 2020;
originally announced May 2020.
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Three-Omega Thermal-Conductivity Measurements with Curved Heater Geometries
Authors:
Gabriel R. Jaffe,
Keenan J. Smith,
Victor W. Brar,
Max G. Lagally,
Mark A. Eriksson
Abstract:
The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the req…
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The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the required millimeter-long straight wire on the sample surface. There are currently no available criteria for how diverting three-omega heater wires around obstacles affects the validity of the thermal measurement. In this Letter, we quantify the effect of wire curvature by performing three-omega experiments with a wide range of frequencies using both curved and straight heater geometries on SiO$_2$/Si samples. When the heating wire is curved, we find that the measured Si substrate thermal conductivity changes by only 0.2%. Similarly, we find that wire curvature has no significant effect on the determination of the thermal resistance of a $\sim$65 nm SiO$_2$ layer, even for the sharpest corners considered here, for which the largest measured ratio of the thermal penetration depth of the applied thermal wave to radius of curvature of the heating wire is 4.3. This result provides useful design criteria for three-omega experiments by setting a lower bound for the maximum ratio of thermal penetration depth to wire radius of curvature.
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Submitted 4 May, 2020;
originally announced May 2020.
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Semi-adsorption-controlled growth window for half Heusler FeVSb epitaxial films
Authors:
Estiaque H. Shourov,
Ryan Jacobs,
Wyatt A. Behn,
Zachary J. Krebs,
Chenyu Zhang,
Patrick J. Strohbeen,
Dongxue Du,
Paul M. Voyles,
Victor W. Brar,
Dane D. Morgan,
Jason K. Kawasaki
Abstract:
The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a \textit{semi} adsorption-controlled growth window for semiconducting half Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to th…
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The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a \textit{semi} adsorption-controlled growth window for semiconducting half Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to the high volatility of Sb, the Sb stoichiometry is self-limiting for a finite range of growth temperatures and Sb fluxes, similar to the growth of III-V semiconductors such as GaSb and GaAs. Films grown within this window are nearly structurally indistinguishable by X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). The highest electron mobility and lowest background carrier density are obtained towards the Sb-rich bound of the window, suggesting that Sb-vacancies may be a common defect. Similar \textit{semi} adsorption-controlled bounds are expected for other ternary intermetallics that contain a volatile species $Z=$\{Sb, As, Bi\}, e.g., CoTiSb, LuPtSb, GdPtBi, and NiMnSb. However, outstanding challenges remain in controlling the remaining Fe/V ($X/Y$) transition metal stoichiometry.
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Submitted 27 September, 2020; v1 submitted 12 March, 2020;
originally announced March 2020.
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Mid-Infrared Radiative Emission from Bright Hot Plasmons in Graphene
Authors:
Laura Kim,
Seyoon Kim,
Pankaj K. Jha,
Victor W. Brar,
Harry A. Atwater
Abstract:
The decay dynamics of excited carriers in graphene have attracted wide scientific attention, as the gapless Dirac electronic band structure opens up relaxation channels that are not allowed in conventional materials. We report Fermi-level-dependent mid-infrared emission in graphene originating from a previously unobserved decay channel: hot plasmons generated from optically excited carriers. The o…
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The decay dynamics of excited carriers in graphene have attracted wide scientific attention, as the gapless Dirac electronic band structure opens up relaxation channels that are not allowed in conventional materials. We report Fermi-level-dependent mid-infrared emission in graphene originating from a previously unobserved decay channel: hot plasmons generated from optically excited carriers. The observed Fermi-level dependence rules out Planckian light emission mechanisms and is consistent with the calculated plasmon emission spectra in photoinverted graphene. Evidence for bright hot plasmon emission is further supported by Fermi-level-dependent and polarization-dependent resonant emission from graphene plasmonic nanoribbon arrays under pulsed laser excitation. Spontaneous plasmon emission is a bright emission process as our calculations for our experimental conditions indicate that the spectral flux of spontaneously generated plasmons is several orders of magnitude higher than blackbody emission at a temperature of several thousand Kelvin. In this work, it is shown that a large enhancement in radiation efficiency of graphene plasmons can be achieved by decorating graphene surface with gold nanodisks, which serve as out-coupling scatterers and promote localized plasmon excitation when they are resonant with the incoming excitation light. These observations set a framework for exploration of ultrafast and ultrabright mid-infrared emission processes and light sources.
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Submitted 29 January, 2020;
originally announced January 2020.
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Dynamic Bandstructure and Capacitance Effects in Scanning Tunneling Spectroscopy of Bilayer Graphene
Authors:
Gregory R. Holdman,
Zachary J. Krebs,
Wyatt A. Behn,
Keenan J. Smith,
K. Watanabe,
T. Taniguchi,
Victor W. Brar
Abstract:
We develop a fully self-consistent model to describe scanning tunneling spectroscopy (STS) measurements of Bernal-stacked bilayer graphene (BLG), and we compare the results of our model to experimental measurements. Our results show that the STS tip acts as a top gate that changes the BLG bandstructure and Fermi level, while simultaneously probing the voltage-dependent tunneling density of states…
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We develop a fully self-consistent model to describe scanning tunneling spectroscopy (STS) measurements of Bernal-stacked bilayer graphene (BLG), and we compare the results of our model to experimental measurements. Our results show that the STS tip acts as a top gate that changes the BLG bandstructure and Fermi level, while simultaneously probing the voltage-dependent tunneling density of states (TDOS). These effects lead to differences between the TDOS and the local density of states (LDOS); in particular, we show that the bandgap of the BLG appears larger than expected in STS measurements, that an additional feature appears in the TDOS that is an artifact of the STS measurement, and that asymmetric charge distribution effects between the individual graphene layers are observable via STS.
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Submitted 24 September, 2019; v1 submitted 10 September, 2019;
originally announced September 2019.
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Self-stabilizing laser sails based on optical metasurfaces
Authors:
Joel Siegel,
Anthony Wang,
Sergey G. Menabde,
Mikhail A. Kats,
Min Seok Jang,
Victor Watson Brar
Abstract:
This article investigates the stability of 'laser sail'-style spacecraft constructed from dielectric metasurfaces with areal densities $<$1g/m$^2$. We show that the microscopic optical forces exerted on a metasurface by a high power laser (100 GW) can be engineered to achieve passive self-stabilization, such that it is optically trapped inside the drive beam, and self-corrects against angular and…
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This article investigates the stability of 'laser sail'-style spacecraft constructed from dielectric metasurfaces with areal densities $<$1g/m$^2$. We show that the microscopic optical forces exerted on a metasurface by a high power laser (100 GW) can be engineered to achieve passive self-stabilization, such that it is optically trapped inside the drive beam, and self-corrects against angular and lateral perturbations. The metasurfaces we study consist of a patchwork of beam-steering elements that reflect light at different angles and efficiencies. These properties are varied for each element across the area of the metasurface, and we use optical force modeling tools to explore the behavior of several metasurfaces with different scattering properties as they interact with beams that have different intensity profiles. Finally, we use full-wave numerical simulation tools to extract the actual optical forces that would be imparted on Si/SiO$_{2}$ metasurfaces consisting of more than 400 elements, and we compare those results to our analytical models. We find that under first-order approximations, there are certain metasurface designs that can propel 'laser-sail'-type spacecraft in a stable manner.
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Submitted 21 March, 2019;
originally announced March 2019.
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Atomic-scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control
Authors:
Wei-Hsiang Lin,
Victor W. Brar,
Deep Jariwala,
Michelle C. Sherrott,
Wei-Shiuan Tseng,
Chih-I Wu,
Nai-Chang Yeh,
Harry A. Atwater
Abstract:
Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale structure of CVD-grown wafer-scale (~25 cm2) h-BN sheets ranging in thickness from 1-20 monolayers. Atomic-scale images of h-BN on Au and graphene/Au substrates obtaine…
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Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale structure of CVD-grown wafer-scale (~25 cm2) h-BN sheets ranging in thickness from 1-20 monolayers. Atomic-scale images of h-BN on Au and graphene/Au substrates obtained by scanning tunneling microscopy (STM) reveal high h-BN crystalline quality in monolayer samples. Further characterization of 1-20 monolayer samples indicates uniform thickness for wafer-scale areas; this thickness control is a result of precise control of the precursor flow rate, deposition temperature and pressure. Raman and infrared spectroscopy indicate the presence of B-N bonds and reveal a linear dependence of thickness with growth time. X-ray photoelectron spectroscopy (XPS) shows the film stoichiometry, and the B/N atom ratio in our films is 1 + 0.6% across the range of thicknesses. Electrical current transport in metal/insulator/metal (Au/h-BN/Au) heterostructures indicates that our CVD-grown h-BN films can act as excellent tunnel barriers with a high hard-breakdown field strength. Our results suggest that large-area h-BN films are structurally, chemically and electronically uniform over the wafer scale, opening the door to pervasive application as a dielectric in layered nanoelectronic and nanophotonic heterostructures.
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Submitted 22 May, 2017;
originally announced May 2017.
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Spatially resolving density-dependent screening around a single charged atom in graphene
Authors:
Dillon Wong,
Fabiano Corsetti,
Yang Wang,
Victor W. Brar,
Hsin-Zon Tsai,
Qiong Wu,
Roland K. Kawakami,
Alex Zettl,
Arash A. Mostofi,
Johannes Lischner,
Michael F. Crommie
Abstract:
Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated gr…
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Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated graphene device configuration has allowed us to directly visualize how the screening length for this system can be tuned with carrier density. Our results provide insight into electron-impurity and electron-electron interactions in a relativistic setting with important consequences for other graphene-based electronic devices.
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Submitted 17 May, 2017;
originally announced May 2017.
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Electronically Tunable Perfect Absorption in Graphene
Authors:
Seyoon Kim,
Min Seok Jang,
Victor W. Brar,
Kelly W. Mauser,
Harry A. Atwater
Abstract:
Graphene nanostructures that support surface plasmons have been utilized to create a variety of dynamically tunable light modulators, motivated by theoretical predictions of the potential for unity absorption in resonantly-excited monolayer graphene sheets. Until now, the generally low efficiencies of tunable resonant graphene absorbers have been limited by the mismatch between free-space photons…
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Graphene nanostructures that support surface plasmons have been utilized to create a variety of dynamically tunable light modulators, motivated by theoretical predictions of the potential for unity absorption in resonantly-excited monolayer graphene sheets. Until now, the generally low efficiencies of tunable resonant graphene absorbers have been limited by the mismatch between free-space photons and graphene plasmons. Here, we develop nanophotonic structures that overcome this mismatch and demonstrate electronically tunable perfect absorption achieved with patterned graphenes covering less than 10% of the surface. Experimental measurements reveal 96.9% absorption in the graphene plasmonic nanostructure at 1,389 cm$^{-1}$, with an on/off modulation efficiency of 95.9% in reflection. An analytic effective surface admittance model elucidates the origin of perfect absorption, which is design for critical coupling between free-space modes and the graphene plasmonic nanostructures.
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Submitted 10 March, 2017;
originally announced March 2017.
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Experimental Demonstration of >230° Phase Modulation in Gate-Tunable Graphene-Gold Reconfigurable Mid-Infrared Metasurfaces
Authors:
Michelle C. Sherrott,
Philip W. C. Hon,
Katherine T. Fountaine,
Juan C. Garcia,
Samuel M. Ponti,
Victor W. Brar,
Luke A. Sweatlock,
Harry A. Atwater
Abstract:
Metasurfaces offer significant potential to control far-field light propagation through the engineering of amplitude, polarization, and phase at an interface. We report here phase modulation of an electronically reconfigurable metasurface and demonstrate its utility for mid-infrared beam steering. Using a gate-tunable graphene-gold resonator geometry, we demonstrate highly tunable reflected phase…
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Metasurfaces offer significant potential to control far-field light propagation through the engineering of amplitude, polarization, and phase at an interface. We report here phase modulation of an electronically reconfigurable metasurface and demonstrate its utility for mid-infrared beam steering. Using a gate-tunable graphene-gold resonator geometry, we demonstrate highly tunable reflected phase at multiple wavelengths and show up to 237° phase modulation range at an operating wavelength of 8.50 μm. We observe a smooth monotonic modulation of phase with applied voltage from 0° to 206° at a wavelength of 8.70 μm. Based on these experimental data, we demonstrate with antenna array calculations an average beam steering efficiency of 50% for reflected light for angles up to 30°, relative to an ideal metasurface, confirming the suitability of this geometry for reconfigurable mid-infrared beam steering devices.
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Submitted 27 January, 2017;
originally announced January 2017.
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Gate-Variable Mid-Infrared Optical Transitions in a $(Bi_{1-x}Sb_x)_2Te_3$ Topological Insulator
Authors:
William S. Whitney,
Victor W. Brar,
Yunbo Ou,
Yinming Shao,
Artur R. Davoyan,
D. N. Basov,
Ke He,
Qi-Kun Xue,
Harry A. Atwater
Abstract:
We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (Bi1-xSbx)2Te3 films were enabled by use of an epitaxial lift-off method for large-area transfer of topological ins…
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We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (Bi1-xSbx)2Te3 films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi1-xSbx)2Te3, and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.
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Submitted 30 August, 2016; v1 submitted 13 July, 2016;
originally announced July 2016.
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Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene
Authors:
Yang Wang,
Dillon Wong,
Andrey V. Shytov,
Victor W. Brar,
Sangkook Choi,
Qiong Wu,
Hsin-Zon Tsai,
William Regan,
Alex Zettl,
Roland K. Kawakami,
Steven G. Louie,
Leonid S. Levitov,
Michael F. Crommie
Abstract:
Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless re…
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Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons.
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Submitted 10 October, 2015;
originally announced October 2015.
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Electronic modulation of infrared emissivity in graphene plasmonic resonators
Authors:
Victor W. Brar,
Michelle C. Sherrott,
Luke A. Sweatlock,
Min Seok Jang,
Laura Kim,
Mansoo Choi,
Harry A. Atwater
Abstract:
Electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate is demonstrated at temperatures up to 250 C. It is shown that the graphene resonators produce antenna-coupled blackbody radiation, manifest as narrow spectral emission peaks in the mid-IR. By continuously varying the nanoresonators carrier density, the frequency and intensity of these spectra…
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Electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate is demonstrated at temperatures up to 250 C. It is shown that the graphene resonators produce antenna-coupled blackbody radiation, manifest as narrow spectral emission peaks in the mid-IR. By continuously varying the nanoresonators carrier density, the frequency and intensity of these spectral features can be modulated via an electrostatic gate. We describe these phenomena as plasmonically enhanced radiative emission originating both from loss channels associated with plasmon decay in the graphene sheet and from vibrational modes in the SiNx.
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Submitted 16 May, 2014;
originally announced May 2014.
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Tunable Large Resonant Absorption in a Mid-IR Graphene Salisbury Screen
Authors:
Min Seok Jang,
Victor W. Brar,
Michelle C. Sherrott,
Josue J. Lopez,
Laura K. Kim,
Seyoon Kim,
Mansoo Choi,
Harry A. Atwater
Abstract:
Enhancing the interaction strength between graphene and light is an important objective for those seeking to make graphene a relevant material for future optoelectronic applications. Plasmonic modes in graphene offer an additional pathway of directing optical energy into the graphene sheet, while at the same time displaying dramatically small optical confinement factors that make them an interesti…
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Enhancing the interaction strength between graphene and light is an important objective for those seeking to make graphene a relevant material for future optoelectronic applications. Plasmonic modes in graphene offer an additional pathway of directing optical energy into the graphene sheet, while at the same time displaying dramatically small optical confinement factors that make them an interesting means of coupling light to atomic or molecular emitters. Here we show that graphene plasmonic nanoresonators can be placed a quarter wavelength from a reflecting surface and electronically tuned to mimic a surface with an impedance closely matched to freespace (Z0 = 377Ω). This geometry - known in early radar applications as a Salisbury screen - allows for an order of magnitude (from 2.3 to 24.5%) increase of the optical absorption in the graphene and provides an efficient means of coupling to the highly confined graphene plasmonic modes.
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Submitted 22 December, 2013;
originally announced December 2013.
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Map** Dirac Quasiparticles near a Single Coulomb Impurity on Graphene
Authors:
Yang Wang,
Victor W. Brar,
Andrey V. Shytov,
Qiong Wu,
William Regan,
Hsin-Zon Tsai,
Alex Zettl,
Leonid S. Levitov,
Michael F. Crommie
Abstract:
The response of Dirac fermions to a Coulomb potential is predicted to differ significantly from the behavior of non-relativistic electrons seen in traditional atomic and impurity systems. Surprisingly, many key theoretical predictions for this ultra-relativistic regime have yet to be tested in a laboratory. Graphene, a 2D material in which electrons behave like massless Dirac fermions, provides a…
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The response of Dirac fermions to a Coulomb potential is predicted to differ significantly from the behavior of non-relativistic electrons seen in traditional atomic and impurity systems. Surprisingly, many key theoretical predictions for this ultra-relativistic regime have yet to be tested in a laboratory. Graphene, a 2D material in which electrons behave like massless Dirac fermions, provides a unique opportunity to experimentally test such predictions. The response of Dirac fermions to a Coulomb potential in graphene is central to a wide range of electronic phenomena and can serve as a sensitive probe of graphene's intrinsic dielectric constant, the primary factor determining the strength of electron-electron interactions in this material. Here we present a direct measurement of the nanoscale response of Dirac fermions to a single Coulomb potential placed on a gated graphene device. Scanning tunneling microscopy and spectroscopy were used to fabricate tunable charge impurities on graphene and to measure how they are screened by Dirac fermions for a Q = +1|e| impurity charge state. Electron-like and hole-like Dirac fermions were observed to respond very differently to tunable Coulomb potentials. Comparison of this electron-hole asymmetry to theoretical simulations has allowed us to test basic predictions for the behavior of Dirac fermions near a Coulomb potential and to extract the intrinsic dielectric constant of graphene: ε_g= 3.0 \pm 1.0. This small value of ε_g indicates that microscopic electron-electron interactions can contribute significantly to graphene properties.
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Submitted 14 May, 2012;
originally announced May 2012.
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Gate-Controlled Ionization and Screening of Cobalt Adatoms on a Graphene Surface
Authors:
Victor W. Brar,
Regis Decker,
Hans-Michael Solowan,
Yang Wang,
Lorenzo Maserati,
Kevin T. Chan,
Hoonkyung Lee,
Caglar O. Girit,
Alex Zettl,
Steven G. Louie,
Marvin L. Cohen,
Michael F. Crommie
Abstract:
We describe scanning tunneling spectroscopy (STS) measurements performed on individual cobalt (Co) atoms deposited onto backgated graphene devices. We find that Co adatoms on graphene can be ionized by either the application of a global backgate voltage or by the application of a local electric field from a scanning tunneling microscope (STM) tip. Large screening clouds are observed to form around…
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We describe scanning tunneling spectroscopy (STS) measurements performed on individual cobalt (Co) atoms deposited onto backgated graphene devices. We find that Co adatoms on graphene can be ionized by either the application of a global backgate voltage or by the application of a local electric field from a scanning tunneling microscope (STM) tip. Large screening clouds are observed to form around Co adatoms ionized in this way, and we observe that some intrinsic graphene defects display a similar behavior. Our results provide new insight into charged impurity scattering in graphene, as well as the possibility of using graphene devices as chemical sensors.
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Submitted 4 June, 2010;
originally announced June 2010.
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Origin of Spatial Charge Inhomogeneity in Graphene
Authors:
Yuanbo Zhang,
Victor W. Brar,
Caglar Girit,
Alex Zettl,
Michael F. Crommie
Abstract:
In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in graphene flakes placed on a SiO2 substrate. The Dirac fermions in graphene, however, are subject to microscopic perturbations that include topographic corrug…
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In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in graphene flakes placed on a SiO2 substrate. The Dirac fermions in graphene, however, are subject to microscopic perturbations that include topographic corrugations and electron density inhomogeneities (i.e. charge puddles). Such perturbations profoundly alter Dirac fermion behavior, with implications for their fundamental physics as well as for future graphene device applications. Here we report a new technique of Dirac point map** that we have used to determine the origin of charge inhomogeneities in graphene. We find that fluctuations in graphene charge density are not caused by topographical corrugations, but rather by charge-donating impurities below the graphene. These impurities induce unexpected standing wave patterns due to supposedly forbidden back-scattering of Dirac fermions. Such wave patterns can be continuously modulated by electric gating. Our observations provide new insight into impurity scattering of Dirac fermions and the microscopic mechanisms limiting electronic mobility in graphene.
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Submitted 27 February, 2009;
originally announced February 2009.
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Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
Authors:
Yuanbo Zhang,
Victor W. Brar,
Feng Wang,
Caglar Girit,
Yossi Yayon,
Melissa Panlasigui,
Alex Zettl,
Michael F. Crommie
Abstract:
The honeycomb lattice of graphene is a unique two-dimensional (2D) system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions. Novel nanometer-scale behavior in this material, including electronic scattering, spin-based phenomena, and collective excitations, is predicted to be sensitive to charge carrier density. In order to probe local, carrier-density…
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The honeycomb lattice of graphene is a unique two-dimensional (2D) system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions. Novel nanometer-scale behavior in this material, including electronic scattering, spin-based phenomena, and collective excitations, is predicted to be sensitive to charge carrier density. In order to probe local, carrier-density dependent properties in graphene we have performed atomically-resolved scanning tunneling spectroscopy measurements on mechanically cleaved graphene flake devices equipped with tunable back-gate electrodes. We observe an unexpected gap-like feature in the graphene tunneling spectrum which remains pinned to the Fermi level (E_F) regardless of graphene electron density. This gap is found to arise from a suppression of electronic tunneling to graphene states near E_F and a simultaneous giant enhancement of electronic tunneling at higher energies due to a phonon-mediated inelastic channel. Phonons thus act as a "floodgate" that controls the flow of tunneling electrons in graphene. This work reveals important new tunneling processes in gate-tunable graphitic layers.
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Submitted 28 February, 2008;
originally announced February 2008.
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Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC
Authors:
Victor W. Brar,
Yuanbo Zhang,
Yossi Yayon,
Aaron Bostwick,
Taisuke Ohta,
Jessica L. McChesney,
Karsten Horn,
Eli Rotenberg,
Michael F. Crommie
Abstract:
We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spe…
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We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC.
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Submitted 12 July, 2007; v1 submitted 26 June, 2007;
originally announced June 2007.
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Observing Spin Polarization of Individual Magnetic Adatoms
Authors:
Y. Yayon,
V. W. Brar,
L. Senapati,
S. C. Erwin,
M. F. Crommie
Abstract:
We have used spin-polarized scanning tunneling spectroscopy to observe the spin-polarization state of individual Fe and Cr atoms adsorbed onto Co nanoislands. Both of these magnetic adatoms exhibit stationary out-of-plane spin-polarization due to their direct exchange interaction with the substrate, but the sign of the exchange coupling between electron states of the adatom and the surface state…
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We have used spin-polarized scanning tunneling spectroscopy to observe the spin-polarization state of individual Fe and Cr atoms adsorbed onto Co nanoislands. Both of these magnetic adatoms exhibit stationary out-of-plane spin-polarization due to their direct exchange interaction with the substrate, but the sign of the exchange coupling between electron states of the adatom and the surface state of the Co island is opposite for the two: Fe adatoms exhibit parallel spin-polarization to the Co surface state while Cr adatoms exhibit antiparallel spin-polarization. First-principles calculations predict ferromagnetic and antiferromagnetic alignment of the spin moment for individual Fe and Cr adatoms on a Co film, respectively, implying negative spin-polarization for Fe and Cr adatoms over the energy range of the Co surface state.
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Submitted 28 March, 2007;
originally announced March 2007.