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A pandemic-resilient open-inquiry physical science lab course which leverages the Maker movement
Authors:
F. R. Bradbury,
C. F. J. Pols
Abstract:
Without any major changes, a pilot version of a physical science lab course was able to continue when the COVID-19 crisis necessitated the abrupt suspension of on-campus education. The 'Maker Lab' course, in which students conceive and set up their own experiments using affordable microcontrollers, required students to follow the entire arc of an empirical research cycle twice. The decision for an…
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Without any major changes, a pilot version of a physical science lab course was able to continue when the COVID-19 crisis necessitated the abrupt suspension of on-campus education. The 'Maker Lab' course, in which students conceive and set up their own experiments using affordable microcontrollers, required students to follow the entire arc of an empirical research cycle twice. The decision for and facilitation of such open-inquiry projects was based on and warranted by the literature on teaching the process of experimental research and methods of scientific research. The flipped classroom approach was used, where contact time is devoted to discussions and the students' actual experiments were carried out independently at home or elsewhere without the in-person supervision of an instructor. Despite the COVID-19 measures, all students were able to produce interesting and successful research projects. While there were of course difficulties encountered due to the abrupt transition to online teaching, we found several counterbalancing advantages that bear consideration for inclusion even when all teaching activities can return to campus. We believe that three components in the design of the course were vital to the resilience of the course: the choice for fully open-inquiry projects, the decision to use Arduinos as measurement tools, and the flipped aspect of the instruction methods. We also include considerations for adapting these pandemic-resilient methods in other courses and programs.
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Submitted 9 October, 2020; v1 submitted 11 June, 2020;
originally announced June 2020.
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Spatial distribution of electrons on a superfluid helium charge-coupled device
Authors:
Maika Takita,
F. R. Bradbury,
T. M. Gurrieri,
K. J. Wilkel,
Kevin Eng,
M. S. Carroll,
S. A. Lyon
Abstract:
Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately…
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Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately one electron per channel, no detectable transfer errors occur while clocking $10^9$ pixels. One channel with its associated gates is perpendicular to the other 120, providing a CCD which can transfer electrons between the others. This perpendicular channel has not only shown efficient electron transport but also serves as a way to measure the uniformity of the electron occupancy in the 120 parallel channels.
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Submitted 2 October, 2011;
originally announced October 2011.
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Extremely efficient clocked electron transfer on superfluid helium
Authors:
F. R. Bradbury,
Maika Takita,
T. M. Gurrieri,
K. J. Wilkel,
Kevin Eng,
M. S. Carroll,
S. A. Lyon
Abstract:
Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium filled channels by co-opting silicon processing technology to construct the equivalent of a charge-coupled device (CCD). Strong fringing fields lead to undetectably rare transfer failures after over a billion cycles in two dimensions. This extremely efficient transport is measured in 1…
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Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium filled channels by co-opting silicon processing technology to construct the equivalent of a charge-coupled device (CCD). Strong fringing fields lead to undetectably rare transfer failures after over a billion cycles in two dimensions. This extremely efficient transport is measured in 120 channels simultaneously with packets of up to 20 electrons, and down to singly occupied pixels. These results point the way towards the large scale transport of either computational qubits or electron spin qubits used for communications in a hybrid qubit system.
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Submitted 20 July, 2011;
originally announced July 2011.
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Signal and Charge Transfer Efficiency of Few Electrons Clocked on Microscopic Superfluid Helium Channels
Authors:
G. Sabouret,
F. R. Bradbury,
S. Shankar,
S. A. Lyon
Abstract:
Electrons floating on the surface of liquid helium are possible spin-qubits for quantum information processing. Varying electric potentials are not expected to modify spin states, which allows their transport on helium using a charge-coupled device (CCD)-like array of underlying gates. This approach depends upon efficient inter-gate transfer of individual electrons. Measurements are presented he…
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Electrons floating on the surface of liquid helium are possible spin-qubits for quantum information processing. Varying electric potentials are not expected to modify spin states, which allows their transport on helium using a charge-coupled device (CCD)-like array of underlying gates. This approach depends upon efficient inter-gate transfer of individual electrons. Measurements are presented here of the charge transfer efficiency (CTE) of few electrons clocked back and forth above a short microscopic CCD-like structure. A charge transfer efficiency of 0.99999992 is obtained for a clocking frequency of 800 kHz.
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Submitted 15 October, 2007;
originally announced October 2007.
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High precision quantum control of single donor spins in silicon
Authors:
Rajib Rahman,
Cameron J. Wellard,
Forrest R. Bradbury,
Marta Prada,
Jared H. Cole,
Gerhard Klimeck,
Lloyd C. L. Hollenberg
Abstract:
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark…
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The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.
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Submitted 15 May, 2007;
originally announced May 2007.
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Stark Tuning of Donor Electron Spins in Silicon
Authors:
Forrest R. Bradbury,
Alexei M. Tyryshkin,
Guillaume Sabouret,
Jeff Bokor,
Thomas Schenkel,
Stephen A. Lyon
Abstract:
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term p…
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We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.
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Submitted 12 March, 2006;
originally announced March 2006.
