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Towards unification of perovskite stability and photovoltaic performance assessment
Authors:
Bernard Wenger,
Henry J. Snaith,
Isabel H. Sörensen,
Johannes Ripperger,
Samrana Kazim,
Shahzada Ahmad,
Edgar R. Nandayapa,
Christine Boeffel,
Silvia Colodrero,
Miguel Anaya,
Samuel D. Stranks,
Iván Mora-Seró,
Terry Chien-Jen Yang,
Matthias Bräuninger,
Thorsten Rissom,
Tom Aernouts,
Maria Hadjipanayi,
Vasiliki Paraskeva,
George E. Georghiou,
Alison B. Walker,
Arnaud Walter,
Sylvain Nicolay
Abstract:
With the rapid progress of perovskite photovoltaics (PV), further challenges arise to meet meet the minimum standards required for commercial deployment. Along with the push towards higher efficiencies, we identify a need to improve the quality and uniformity of reported research data and to focus efforts upon understanding and overcoming failures during operation. In this perspective, as a large…
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With the rapid progress of perovskite photovoltaics (PV), further challenges arise to meet meet the minimum standards required for commercial deployment. Along with the push towards higher efficiencies, we identify a need to improve the quality and uniformity of reported research data and to focus efforts upon understanding and overcoming failures during operation. In this perspective, as a large and representative consortium of researchers active in this field, we discuss which methods require special attention and issue a series of recommendations to improve research practices and reporting.
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Submitted 27 April, 2020; v1 submitted 24 April, 2020;
originally announced April 2020.
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Large-scale BN tunnel barriers for graphene spintronics
Authors:
Wangyang Fu,
Péter Makk,
Romain Maurand,
Matthias Bräuninger,
Christian Schönenberger
Abstract:
We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the…
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We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.
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Submitted 5 July, 2014;
originally announced July 2014.
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Temperature dependence of the conductivity of ballistic graphene
Authors:
Markus Mueller,
Matthias Braeuninger,
Bjoern Trauzettel
Abstract:
We investigate the temperature dependence of the conductivity in ballistic graphene using Landauer transport theory. We obtain results which are qualitatively in agreement with many features recently observed in transport measurements on high mobility suspended graphene. The conductivity σat high temperature T and low density n grows linearly with T, while at high n we find σ~ |n|^1/2 with negat…
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We investigate the temperature dependence of the conductivity in ballistic graphene using Landauer transport theory. We obtain results which are qualitatively in agreement with many features recently observed in transport measurements on high mobility suspended graphene. The conductivity σat high temperature T and low density n grows linearly with T, while at high n we find σ~ |n|^1/2 with negative corrections at small T due to the T-dependence of the chemical potential. At moderate densities the conductivity is a non-monotonic function of T and n, exhibiting a minimum at T=0.693 \hbar v |n|^1/2 where v is the Fermi velocity. We discuss two kinds of Fabry-Perot oscillations in short nanoribbons and their stability at finite temperatures.
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Submitted 18 September, 2009; v1 submitted 22 December, 2008;
originally announced December 2008.