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Effective removal of global tilt from topography images of vicinal surfaces with narrow terraces
Authors:
A. Yu. Aladyshkin,
A. N. Chaika,
V. N. Semenov,
A. M. Ionov,
S. I. Bozhko
Abstract:
The main feature of vicinal surfaces of crystals characterized by the Miller indices $(h\,h\,m)$, is rather small width (less than 10 nm) and substantially large length (more than 200 nm) of atomically-flat terraces on sample surface. This makes difficult to apply standard methods of image processing and correct visualization of crystalline lattice at the terraces and multiatomic steps. Here we co…
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The main feature of vicinal surfaces of crystals characterized by the Miller indices $(h\,h\,m)$, is rather small width (less than 10 nm) and substantially large length (more than 200 nm) of atomically-flat terraces on sample surface. This makes difficult to apply standard methods of image processing and correct visualization of crystalline lattice at the terraces and multiatomic steps. Here we consider two procedures allowing us to minimize effects of both small-scale noise and global tilt of sample: (i) analysis of the difference of two Gaussian blurred images, and (ii) subtraction of the plane, whose parameters are determined by optimization of the histogram of the visible heights, from raw topography image. It is shown that both methods provide non-distorted images demonstrating atomic structures on vicinal ${\rm Si}(5\,5\,6)$ and ${\rm Si}(5\,5\,7)$ surfaces.
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Submitted 13 June, 2024;
originally announced June 2024.
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Visualization of atomic structures on faceted and non-flat surfaces by difference-of-gaussians approach
Authors:
A. Yu. Aladyshkin,
A. N. Chaika,
V. N. Semenov,
A. S. Aladyshkina,
S. I. Bozhko,
A. M. Ionov
Abstract:
Detailed analysis of scanning probe microscopy (SPM) data acquired for tilted and non-flat surfaces is usually complicated due to presence of large number of surface areas tilted by large/variable angles relative to the scanning plane. As a consequence, standard methods of elimination of global/local slope by a plane subtraction or numerical differentiation seems to be ineffective. We demonstrate…
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Detailed analysis of scanning probe microscopy (SPM) data acquired for tilted and non-flat surfaces is usually complicated due to presence of large number of surface areas tilted by large/variable angles relative to the scanning plane. As a consequence, standard methods of elimination of global/local slope by a plane subtraction or numerical differentiation seems to be ineffective. We demonstrate that simple difference-of-gaussians procedure provides us output data corresponding to a projection of considered surface onto scanning plane without undesirable modifications of contrast. This method allows us to minimize small-scale noise, finite slopes of SPM image along both fast and slow scanning directions and eliminate surface rippling. This method can be applied both for fast 'on-the-fly' visualization of experimental data and more detailed analysis, including high precision determination of lattice parameters and angles between translations vectors in different surface domains. In order to estimate geometrical distortions related to the difference-of-gaussians approach, we compare this method with direct image rotation in 3D space.
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Submitted 12 June, 2024;
originally announced June 2024.
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Unravelling the atomic and electronic structure of nanocrystals on superconducting Nb(110): Impact of the oxygen monolayer
Authors:
Samuel Berman,
Ainur Zhussupbekova,
Brian Walls,
Killian Walshe,
Sergei I. Bozhko,
Andrei Ionov,
David D. O'Regan,
Igor V. Shvets,
Kuanysh Zhussupbekov
Abstract:
The Niobium surface is almost always covered by a native oxide layer which greatly influences the performance of superconducting devices. Here we investigate the highly stable Niobium oxide overlayer of Nb(110), which is characterised by its distinctive nanocrystal structure as observed by scanning tunnelling microscopy (STM). Our ab-initio density functional theory (DFT) calculations show that a…
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The Niobium surface is almost always covered by a native oxide layer which greatly influences the performance of superconducting devices. Here we investigate the highly stable Niobium oxide overlayer of Nb(110), which is characterised by its distinctive nanocrystal structure as observed by scanning tunnelling microscopy (STM). Our ab-initio density functional theory (DFT) calculations show that a subtle reconstruction in the surface Niobium atoms gives rise to rows of 4-fold coordinated oxygen separated by regions of 3-fold coordinated oxygen. The 4-fold oxygen rows are determined to be the source of the nanocrystal pattern observed in STM, and the two chemical states of oxygen observed in core-level X-ray photoelectron spectroscopy (XPS) are ascribed to the 3-fold and 4-fold oxygens. Furthermore, we find excellent agreement between the DFT calculated electronic structure with scanning tunnelling spectroscopy and valence XPS measurements.
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Submitted 2 November, 2023;
originally announced November 2023.
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Observation of hidden parts of dislocation loops in thin Pb films by means of scanning tunneling spectroscopy
Authors:
A. Yu. Aladyshkin,
A. S. Aladyshkina,
S. I. Bozhko
Abstract:
Local electronic properties of quasi-two-dimensional Pb(111) islands with screw dislocations of different types on their surfaces were experimentally studied by means of low-temperature scanning tunneling microscopy and spectroscopy in the regime of constant current. A comparison of the topography map, the maps of tunneling current variation and the differential tunneling conductance acquired simu…
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Local electronic properties of quasi-two-dimensional Pb(111) islands with screw dislocations of different types on their surfaces were experimentally studied by means of low-temperature scanning tunneling microscopy and spectroscopy in the regime of constant current. A comparison of the topography map, the maps of tunneling current variation and the differential tunneling conductance acquired simultaneously allows one to visualize the hidden parts of the dislocation loops under the sample surface. We demonstrate that two closely-positioned screw dislocations with the opposite Burgers vectors can either (i) connect to each other by the sub-surface dislocation loop or (ii) generate independent hidden edge dislocation lines which run towards the perimeter of the Pb island. In addition, we found a screw dislocation, which does not produce outcoming sub-surface dislocation loops. Screw dislocations and the hidden dislocations lines are the source of the non-quantized variation of the local thickness of the Pb terraces, affecting the local electronic properties.
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Submitted 4 December, 2022;
originally announced December 2022.
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Local laser oxidation of titanium film for post-fabrication trimming of photonic integrated circuits
Authors:
Aleksandr V. Tronev,
Mikhail V. Parfenov,
Sergey I. Bozhko,
Andrey M. Ionov,
Rais N. Mozhchil,
Sergey V. Chekmazov,
Petr M. Agruzov,
Igor V. Ilichev,
Aleksandr V. Shamrai
Abstract:
Local laser oxidation of a thin titanium film is considered as a means of a precise adjustment of losses and effective refractive index of dielectric optical waveguides. A fine phase control of an operating point and extinction ratio enhancement up to 57 dB were demonstrated using an integrated optical Ti:LiNbO3 Mach-Zehnder modulator. This technique only slightly affects the dielectric waveguide…
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Local laser oxidation of a thin titanium film is considered as a means of a precise adjustment of losses and effective refractive index of dielectric optical waveguides. A fine phase control of an operating point and extinction ratio enhancement up to 57 dB were demonstrated using an integrated optical Ti:LiNbO3 Mach-Zehnder modulator. This technique only slightly affects the dielectric waveguide material and is very promising for a high precision permanent trimming of photonic devices based on dielectric waveguides of different material platforms and fabrication technologies.
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Submitted 24 September, 2022; v1 submitted 2 November, 2021;
originally announced November 2021.
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Memory effect in the charge transport in strongly disordered antimony films
Authors:
N. N. Orlova,
S. I. Bozhko,
E. V. Deviatov
Abstract:
We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the…
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We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages.
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Submitted 8 May, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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Nonuniform quantum-confined states and visualization of hidden defects in thin Pb(111) films
Authors:
A. V. Putilov,
S. S. Ustavschikov,
S. I. Bozhko,
A. Yu. Aladyshkin
Abstract:
The spatial distribution of the differential conductance for ultrathin Pb films grown on Si(111)7x7 substrate is studied by means of low-temperature scanning tunneling microscopy and spectroscopy. The formation of the quantum--confined states for conduction electrons and, correspondingly, the appearance of local maxima of the differential tunneling conductance are typical for Pb films; the energy…
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The spatial distribution of the differential conductance for ultrathin Pb films grown on Si(111)7x7 substrate is studied by means of low-temperature scanning tunneling microscopy and spectroscopy. The formation of the quantum--confined states for conduction electrons and, correspondingly, the appearance of local maxima of the differential tunneling conductance are typical for Pb films; the energy of such states is determined mainly by the local thickness of Pb film. We demonstrate that the magnitude of the tunneling conductivity within atomically flat terraces can be spatially nonuniform and the period of the small-scale modulation coincides with the period of Si(111)7x7 reconstruction. For relatively thick Pb films we observe large-scale inhomogeneities of the tunneling conductance, which reveal itself as a gradual shift of the quantized levels at a value of the order of 50 meV at distances of the order of 100 nm. We believe that such large-scale variations of the tunneling conductance and, respectively, local density of states in Pb films can be related to presence of internal defects of crystalline structure, for instance, local electrical potentials and stresses.
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Submitted 11 June, 2019;
originally announced June 2019.
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Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic scale model
Authors:
Olzat Toktarbaiuly,
Victor Usov,
Cormac Ó Coileáin,
Katarzyna Siewierska,
Sergey Krasnikov,
Emma Norton,
Sergey I. Bozhko,
Valery N. Semenov,
Alexander N. Chaika,
Barry E. Murphy,
Olaf Lübben,
Filip Krzyżewski,
Magdalena A. Załuska-Kotur,
Anna Krasteva,
Hristina Popova,
Vesselin Tonchev,
Igor V. Shvets
Abstract:
We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent γ, connecting the maximal slope of a bunch with its height, differs depending on the current direction. We provide a numerical perspective by using an atomistic scale model with a conser…
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We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent γ, connecting the maximal slope of a bunch with its height, differs depending on the current direction. We provide a numerical perspective by using an atomistic scale model with a conserved surface flux to mimic experimental conditions, and also for the first time show that there is an interval of parameters in which the vicinal surface is unstable against step bunching for both directions of the adatom drift.
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Submitted 31 December, 2017; v1 submitted 13 December, 2017;
originally announced December 2017.
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Double Fe-impurity charge state in the topological insulator Bi$_2$Se$_3$
Authors:
V. S. Stolyarov,
S. V. Remizov,
D. S. Shapiro,
S. Pons,
S. Vlaic,
H. Aubin,
D. S. Baranov,
Ch. Brun,
L. V. Yashina,
S. I. Bozhko,
T. Cren,
W. V. Pogosov,
D. Roditchev
Abstract:
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, a…
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The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, as well as on the overall do** level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to the Dirac point and bulk bands have both to be taken into account when considering the electron scattering on the disorder in topological insulators.
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Submitted 5 December, 2017; v1 submitted 4 December, 2017;
originally announced December 2017.
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Fabrication of sharp atomic force microscope probes using in-situ local electric field induced deposition under ambient conditions
Authors:
Alexei Temiryazev,
Sergey I. Bozhko,
A. Edward Robinson,
Marina Temiryazeva
Abstract:
We demonstrate a simple method to significantly improve the sharpness of standard silicon probes for an atomic force microscope, or to repair a damaged probe. The method is based on creating and maintaining a strong, spatially localized electric field in the air gap between the probe tip and the surface of conductive sample. Under these conditions, nanostructure growth takes place on both the samp…
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We demonstrate a simple method to significantly improve the sharpness of standard silicon probes for an atomic force microscope, or to repair a damaged probe. The method is based on creating and maintaining a strong, spatially localized electric field in the air gap between the probe tip and the surface of conductive sample. Under these conditions, nanostructure growth takes place on both the sample and the tip. The most likely mechanism is the decomposition of atmospheric adsorbate with subsequent deposition of carbon structures. This makes it possible to grow a spike of a few hundred nanometers in length on the tip. We further demonstrate that probes obtained by this method can be used for high-resolution scanning. It is important to note that all process operations are carried out in-situ, in air and do not require the use of closed chambers or any additional equipment beyond the atomic force microscope itself.
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Submitted 11 October, 2016;
originally announced October 2016.
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Surface states in a 3D topological insulator: The role of hexagonal war** and curvature
Authors:
E. V. Repin,
V. S. Stolyarov,
T. Cren,
C. Brun,
S. I. Bozhko,
L. V. Yashina,
D. Roditchev,
I. S. Burmistrov
Abstract:
We explore a combined effect of hexagonal war** and of finite effective mass on both the tunneling density of electronic states (TDOS) and structure of Landau levels (LLs) of 3D topological insulators. We find the increasing war** to transform the square-root van Hove singularity into a logarithmic one. For moderate war** an additional logarithmic singularity and a jump in the TDOS appear. T…
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We explore a combined effect of hexagonal war** and of finite effective mass on both the tunneling density of electronic states (TDOS) and structure of Landau levels (LLs) of 3D topological insulators. We find the increasing war** to transform the square-root van Hove singularity into a logarithmic one. For moderate war** an additional logarithmic singularity and a jump in the TDOS appear. This phenomenon is experimentally verified by direct measurements of the local TDOS in Bi$_2$Te$_3$. By combining the perturbation theory and the WKB approximation we calculate the LLs in the presence of hexagonal war**. We predict that due to the degeneracy removal the evolution of LLs in the magnetic field is drastically modified.
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Submitted 29 August, 2014;
originally announced August 2014.
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Structure and magnetic properties of nanostructured Pd-Fe thin films produced by pulse electrodeposition
Authors:
G. K. Strukova,
G. V. Strukov,
S. I. Bozhko,
Yu. P. Kabanov,
I. M. Shmytko,
A. A. Mazilkin,
N. A. Sobolev,
E. R. Zhiteytsev,
A. A. Suhanov,
V. K. Voronkova,
L. R. Tagirov
Abstract:
Nanostructured Pd-Fe thin films with varied Fe content were prepared by electrodeposition technique from organic electrolytes on Cu and brass substrates. The structure and the magnetic properties of the films were investigated prior to post-deposition annealing. The structure of the Pd1-xFex thin films with x = 0.14, 0.24, and 0.52 was determined by X-ray diffraction (XRD) and transmission electro…
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Nanostructured Pd-Fe thin films with varied Fe content were prepared by electrodeposition technique from organic electrolytes on Cu and brass substrates. The structure and the magnetic properties of the films were investigated prior to post-deposition annealing. The structure of the Pd1-xFex thin films with x = 0.14, 0.24, and 0.52 was determined by X-ray diffraction (XRD) and transmission electron microscopy (TEM) as a solid solution of iron in palladium face-centered cubic lattice with the (111) orientation of nanograins relatively to the substrate surface. The films with higher iron concentration, x = 0.74, 0.91, have structure of a solid solution based on the body-centered cubic lattice. The average grain size determined by the scanning electron microscopy (SEM) for the first two alloys is 7-10 nm, and for the latter ones it is about 120 nm. The saturation magnetization of the films has linear dependence on the iron content, but coercivity has non-monotonic dependence on x, i.e. the films with x = 0.68 show highest coercivity. The magnetic anisotropy of the samples is studied by ferromagnetic resonance (FMR) spectroscopy.
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Submitted 19 August, 2011;
originally announced August 2011.
