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Transferable tight binding model for strained group IV and III-V materials and heterostructures
Authors:
Yaohua Tan,
Michael Povolotskyi,
Tillmann Kubis,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with nearest neighbor interactions for arbitrarily strained group IV and III-V materials. The tight binding model is parameterized with respect to Hybrid functional(HSE06) calculations for varieties of strained systems. The tight b…
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It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with nearest neighbor interactions for arbitrarily strained group IV and III-V materials. The tight binding model is parameterized with respect to Hybrid functional(HSE06) calculations for varieties of strained systems. The tight binding calculations of ultra small superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of tight binding model to superlattices demonstrates that transferable tight binding model with nearest neighbor interactions can be obtained for group IV and III-V materials.
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Submitted 4 June, 2016; v1 submitted 13 March, 2016;
originally announced March 2016.
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Transferable tight binding model for strained group IV and III-V heterostructures
Authors:
Yaohua P. Tan,
Michael Povolotskyi,
Tillmann Kubis,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained bulk materials as well as ultra-thin superlattices.
In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained bulk materials as well as ultra-thin superlattices.
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Submitted 25 April, 2015;
originally announced April 2015.
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Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution
Authors:
Yaohua P. Tan,
Michael Povolotsky,
Tillmann Kubis,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments or theoretical electronic bands. However, ETB calculations based on existing parameters lead to unphysical results in ultra small structures like the As terminated GaAs ultra thin bodies(UTBs). In this work, it is shown t…
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Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments or theoretical electronic bands. However, ETB calculations based on existing parameters lead to unphysical results in ultra small structures like the As terminated GaAs ultra thin bodies(UTBs). In this work, it is shown that more reliable parameterizations can be obtained by a process of map** ab-initio bands and wave functions to tight binding models. This process enables the calibration of not only the ETB energy bands but also the ETB wave functions with corresponding ab-initio calculations. Based on the map** process, ETB model of Si and GaAs are parameterized with respect to hybrid functional calculations. Highly localized ETB basis functions are obtained. Both the ETB energy bands and wave functions with subatomic resolution of UTBs show good agreement with the corresponding hybrid functional calculations. The ETB methods can then be used to explain realistically extended devices in non-equilibrium that can not be tackled with ab-initio methods.
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Submitted 16 March, 2015;
originally announced March 2015.
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Brillouin zone unfolding method for effective phonon spectra
Authors:
Timothy B. Boykin,
Arvind Ajoy,
Hesameddin Ilatikhameneh,
Michael Povolotskyi,
Gerhard Klimeck
Abstract:
Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure material, but problems arise when alloys are used. Specifically, only approximate bandstructures can be computed for random alloys and most often the Virtual Crystal Approximation (VCA) is used. Unfolding methods [T. B. Boykin…
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Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure material, but problems arise when alloys are used. Specifically, only approximate bandstructures can be computed for random alloys and most often the Virtual Crystal Approximation (VCA) is used. Unfolding methods [T. B. Boykin, N. Kharche, G. Klimeck, and M. Korkusinski, J. Phys.: Condens. Matt. 19, 036203 (2007).] have proven very useful for tight-binding calculations of alloy electronic structure without the problems in the VCA, and the mathematical analogy between tight-binding and valence-force-field approaches to the phonon problem suggest they be employed here as well. However, there are some differences in the physics of the two problems requiring modifications to the electronic structure approach. We therefore derive a phonon alloy bandstructure (vibrational mode) approach based on our tight-binding electronic structure method, modifying the band-determination method to accommodate the different physical situation. Using the method, we study In$_x$Ga$_{1-x}$As alloys and find very good agreement with available experiments.
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Submitted 17 July, 2014;
originally announced July 2014.
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Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces
Authors:
Xue** Jiang,
Neerav Kharche,
Paul Kohl,
Timothy B. Boykin,
Gerhard Klimeck,
Mathieu Luisier,
Pulickel M. Ajayan,
Saroj K. Nayak
Abstract:
In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrate…
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In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrates has not been thoroughly investigated. Using large-scale electronic structure calculations based on the GW approach, we show that when GNRs are deposited on substrates, bandgaps get strongly suppressed (by as much as 1 eV) even though the GNR-substrate interaction is weak.
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Submitted 12 September, 2013;
originally announced September 2013.
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Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT map**
Authors:
Yaohua Tan,
Michael Povolotskyi,
Tillmann Kubis,
Yu He,
Zheng** Jiang,
Gerhard Klimeck,
Timothy B. Boykin
Abstract:
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data, or critical theoretical bandedges and symmetries rather than a foundational map**. A further shortcoming of tradit…
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The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data, or critical theoretical bandedges and symmetries rather than a foundational map**. A further shortcoming of traditional ETB is the lack of an explicit basis. In this work, a DFT map** process which constructs TB parameters and explicit basis from DFT calculations is developed. The method is applied to two materials: GaAs and MgO. Compared with the existing TB parameters, the GaAs parameters by DFT map** show better agreement with the DFT results in bulk band structure calculations and lead to different indirect valleys when applied to nanowire calculations. The MgO TB parameters and TB basis functions are also obtained through the DFT map** process.
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Submitted 30 October, 2012;
originally announced October 2012.
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Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors
Authors:
SungGeun Kim,
Mathieu Luisier,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full-band quantum transport simulation based on the sp3d5s?* tight-binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significan…
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The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full-band quantum transport simulation based on the sp3d5s?* tight-binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significant reduction of the cut-off frequency. The fluctuations of the conduction band edge due to the rough surface lead to a reflection of electrons through mode-mismatch. This effect reduces the velocity of electrons and hence the transconductance considerably causing a cut-off frequency reduction.
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Submitted 14 November, 2011;
originally announced November 2011.
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Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons
Authors:
Timothy B. Boykin,
Mathieu Luisier,
Gerhard Klimeck,
Xue** Jiang,
Neerav Kharche,
Yu Zhou,
Saroj K. Nayak
Abstract:
Accurate modeling of the pi-bands of armchair graphene nanoribbons (AGNRs) requires correctly reproducing asymmetries in the bulk graphene bands as well as providing a realistic model for hydrogen passivation of the edge atoms. The commonly used single-pz orbital approach fails on both these counts. To overcome these failures we introduce a nearest-neighbor, three orbital per atom p/d tight-bindin…
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Accurate modeling of the pi-bands of armchair graphene nanoribbons (AGNRs) requires correctly reproducing asymmetries in the bulk graphene bands as well as providing a realistic model for hydrogen passivation of the edge atoms. The commonly used single-pz orbital approach fails on both these counts. To overcome these failures we introduce a nearest-neighbor, three orbital per atom p/d tight-binding model for graphene. The parameters of the model are fit to first-principles density-functional theory (DFT) - based calculations as well as to those based on the many-body Green's function and screened-exchange (GW) formalism, giving excellent agreement with the ab initio AGNR bands. We employ this model to calculate the current-voltage characteristics of an AGNR MOSFET and the conductance of rough-edge AGNRs, finding significant differences versus the single-pz model. These results show that an accurate bandstructure model is essential for predicting the performance of graphene-based nanodevices.
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Submitted 8 February, 2011;
originally announced February 2011.
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Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
Authors:
SungGeun Kim,
Abhijeet Paul,
Mathieu Luisier,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model. The interface between the silicon and the silicon dioxide layers is generated in a real-space atomistic representation using an experimentally deriv…
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The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model. The interface between the silicon and the silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function (ACVF). The oxide layer is modeled in the virtual crystal approximation (VCA) using fictitious SiO2 atoms. <110>-oriented nanowires with different diameters and randomly generated surface configurations are studied. The experimentally observed ON-current and the threshold voltage is quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental results.
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Submitted 3 February, 2011; v1 submitted 14 November, 2010;
originally announced November 2010.
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Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations
Authors:
Muhammad Usman,
Yui-Hong Matthias Tan,
Hoon Ryu,
Shaikh S. Ahmed,
Hubert Krenner,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explici…
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Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.
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Submitted 22 June, 2011; v1 submitted 18 August, 2010;
originally announced August 2010.
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Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
Authors:
Rajib Rahman,
Seung H. Park,
Timothy B. Boykin,
Gerhard Klimeck,
Sven Rogge,
Lloyd C. L. Hollenberg
Abstract:
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion at…
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The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.
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Submitted 19 May, 2009;
originally announced May 2009.
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Multimillion Atom Simulations with NEMO 3-D
Authors:
Shaikh Ahmed,
Neerav Kharche,
Rajib Rahman,
Muhammad Usman,
Sunhee Lee,
Hoon Ryu,
Hansang Bae,
Steve Clark,
Benjamin Haley,
Maxim Naumov,
Faisal Saied,
Marek Korkusinski,
Rick Kennel,
Michael McLennan,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representa…
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The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanodevices and structures. At the atomic scale of novel nanostructured semiconductors the distinction between new device and new material is blurred and device physics and material science meet. The quantum mechanical effects in the electronic states of the device and the granular, atomistic representation of the underlying material become important. The variety of geometries, materials, and do** configurations in semiconductor devices at the nanoscale suggests that a general nanoelectronic modeling tool is needed. The Nanoelectronic Modeling tool (NEMO 3-D) has been developed to address these needs. Based on the atomistic valence-force field (VFF) method and a variety of nearest-neighbor tight-binding models, NEMO 3-D enables the computation of strain for over 64 million atoms and of electronic structure for over 52 million atoms, corresponding to volumes of (110nmx110nmx110nm) and (101nmx101nmx101nm), respectively. This article discusses the theoretical models, essential algorithmic and computational components, and optimization methods that have been used in the development and the deployment of NEMO 3-D. Also, successful applications of NEMO 3-D are demonstrated in the atomistic calculation of single-particle electronic states of (1) self-assembled quantum dots including long-range strain and piezoelectricity; (2) stacked quantum dots ; (3) Phosphorus impurities in Silicon used in quantum computation; (4) Si on SiGe quantum wells (QWs); and (5) SiGe nanowires.
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Submitted 13 January, 2009;
originally announced January 2009.
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Valley Degeneracies in (111) Silicon Quantum Wells
Authors:
Neerav Kharche,
Seongmin Kim,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
(111) Silicon quantum wells have been studied extensively, yet no convincing explanation exists for the experimentally observed breaking of 6 fold valley degeneracy into 2 and 4 fold degeneracies. Here, systematic sp3d5s* tight-binding and effective mass calculations are presented to show that a typical miscut modulates the energy levels which leads to breaking of 6 fold valley degeneracy into 2…
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(111) Silicon quantum wells have been studied extensively, yet no convincing explanation exists for the experimentally observed breaking of 6 fold valley degeneracy into 2 and 4 fold degeneracies. Here, systematic sp3d5s* tight-binding and effective mass calculations are presented to show that a typical miscut modulates the energy levels which leads to breaking of 6 fold valley degeneracy into 2 lower and 4 raised valleys. An effective mass based valley-projection model is used to determine the directions of valley-minima in tight-binding calculations of large supercells. Tight-binding calculations are in better agreement with experiments compared to effective mass calculations.
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Submitted 18 December, 2008;
originally announced December 2008.
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Conduction band tight-binding description for silicon applied to phosphorous donors
Authors:
A. S. Martins,
Timothy B. Boykin,
Gerhard Klimeck,
Belita Koiller
Abstract:
A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is assessed by performing systematic comparisons between the descriptions of donor impurities in Si using this parametrization and previously reported ones. The spectra…
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A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is assessed by performing systematic comparisons between the descriptions of donor impurities in Si using this parametrization and previously reported ones. The spectral decomposition of the donor wavefunction demonstrates the importance of incorporating full band effects for a reliable representation, and that an incomplete real space description results from a truncated reciprocal space expansion as proposed within the effective mass theory.
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Submitted 11 January, 2007; v1 submitted 10 December, 2006;
originally announced December 2006.
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Valley splitting in strained silicon quantum wells
Authors:
Timothy B. Boykin,
Gerhard Klimeck,
M. A. Eriksson,
Mark Friesen,
S. N. Coppersmith,
Paul von Allmen,
Fabiano Oyafuso,
Seungwon Lee
Abstract:
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tig…
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A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tight-binding model is developed, it yields much physical insight, and it reproduces the behavior of the splitting in the NEMO results. The splitting is in general nonzero even in the absence of electric field in contrast to previous works. The splitting in a square well oscillates as a function of S, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as $S^3$. Finally the feasibility of observing such oscillations experimentally in modern Si/SiGe heterostructures is discussed.
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Submitted 29 September, 2003;
originally announced September 2003.
