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Spatially resolved photoluminescence analysis of Se passivation and defect formation in CdSe$_{x}$Te$_{1-x}$ thin films
Authors:
Alan R Bowman,
Jacob J Leaver,
Kyle Frohna,
Samuel D Stranks,
Giulia Tagliabue,
Jon D Major
Abstract:
CdTe is the most commercially successful thin-film photovoltaic technology to date. The recent development of Se-alloyed CdSe$_{x}$Te$_{1-x}$ layers in CdTe solar cells has led to higher device efficiencies, due to a lowered bandgap improving the photocurrent, improved voltage characteristics and longer carrier lifetimes. Evidence from cross-sectional electron microscopy is widely believed to indi…
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CdTe is the most commercially successful thin-film photovoltaic technology to date. The recent development of Se-alloyed CdSe$_{x}$Te$_{1-x}$ layers in CdTe solar cells has led to higher device efficiencies, due to a lowered bandgap improving the photocurrent, improved voltage characteristics and longer carrier lifetimes. Evidence from cross-sectional electron microscopy is widely believed to indicate that Se passivates defects in CdSe$_{x}$Te$_{1-x}$ solar cells, and that this is the reason for better lifetimes and voltages in these devices. Here, we utilise spatially resolved photoluminescence measurements of CdSe$_{x}$Te$_{1-x}$ thin films on glass to study the effects of Se on carrier recombination in the material, isolated from the impact of conductive interfaces and without the need to prepare cross-sections through the samples. We find further evidence to support Se passivation of grain boundaries, but also identify an associated increase in below-bandgap photoluminescence that indicates the presence of Se-enhanced luminescent defects. Our results show that Se treatment, in tandem with Cl passivation, does increase radiative efficiencies. However, the simultaneous enhancement of defects within the grain interiors suggests that although it is overall beneficial, Se incorporation may still ultimately limit the maximum attainable efficiency of CdSe$_{x}$Te$_{1-x}$ solar cells.
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Submitted 10 October, 2023;
originally announced October 2023.
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Interfacial Hot Carrier Collection Controls Plasmonic Chemistry
Authors:
Fatemeh Kiani,
Alan R. Bowman,
Milad Sabzehparvar,
Can O. Karaman,
Ravishankar Sundararaman,
Giulia Tagliabue
Abstract:
Harnessing non-equilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field. It promises to enable control of activity and selectivity of photochemical reactions, especially for solar fuel generation. However, a comprehensive understanding of the interplay of plasmonic hot carrier-driven processes in metal/semiconducting heterostructures has remained elusive. I…
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Harnessing non-equilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field. It promises to enable control of activity and selectivity of photochemical reactions, especially for solar fuel generation. However, a comprehensive understanding of the interplay of plasmonic hot carrier-driven processes in metal/semiconducting heterostructures has remained elusive. In this work, we reveal the complex interdependence between plasmon excitation, hot carrier generation, transport and interfacial collection in plasmonic photocatalytic devices, uniquely determining the charge injection efficiencies at the solid/solid and solid/liquid interfaces. Interestingly, by measuring the internal quantum efficiency of ultrathin (14 to 33 nm) single-crystalline plasmonic gold (Au) nanoantenna arrays on titanium dioxide substrates, we find that the performance of the device is governed by hot hole collection at the metal/electrolyte interface. In particular, by combining a solid- and liquid-state experimental approach with ab initio simulations, we show a more efficient collection of high-energy d-band holes traveling in [111] orientation, resulting in a stronger oxidation reaction at the {111} surfaces of the nanoantenna. These results thus establish new guidelines for the design and optimization of plasmonic photocatalytic systems and optoelectronic devices.
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Submitted 18 July, 2023;
originally announced July 2023.
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Quantum-mechanical effects in photoluminescence from thin crystalline gold films
Authors:
Alan R. Bowman,
Álvaro Rodríguez Echarri,
Fatemeh Kiani,
Fadil Iyikanat,
Ted V. Tsoulos,
Joel D. Cox,
Ravishankar Sundararaman,
F. Javier García de Abajo,
Giulia Tagliabue
Abstract:
Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unravelling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-…
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Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its microscopic origin strongly debated, and its potential for unravelling nanoscale carrier dynamics largely unexploited. Here, we reveal quantum-mechanical effects emanating in the luminescence from thin monocrystalline gold flakes. Specifically, we present experimental evidence, supported by first-principles simulations, to demonstrate its photoluminescence origin when exciting in the interband regime. Our model allows us to identify changes to the measured gold luminescence due to quantum-mechanical effects as the gold film thickness is reduced. Excitingly, such effects are observable in the luminescence signal from flakes up to 40 nm in thickness, associated with the out-of-plane discreteness of the electronic band structure near the Fermi level. We qualitatively reproduce the observations with first-principles modelling, thus establishing a unified description of luminescence in gold and enabling its widespread application as a probe of carrier dynamics and light-matter interactions in this material. Our study paves the way for future explorations of hot-carriers and charge-transfer dynamics in a multitude of material systems.
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Submitted 25 September, 2023; v1 submitted 17 July, 2023;
originally announced July 2023.
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A study of singlet fission-halide perovskite interfaces
Authors:
Alan R. Bowman,
Samuel D. Stranks,
Bartomeu Monserrat
Abstract:
A method for improving the efficiency of solar cells is combining a low-bandgap semiconductor with a singlet fission material (which converts one high energy singlet into two low energy triplets following photoexcitation). Here we present a study of the interface between singlet fission molecules and low-bandgap halide pervoskites. We briefly show a range of experiments screening for triplet trans…
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A method for improving the efficiency of solar cells is combining a low-bandgap semiconductor with a singlet fission material (which converts one high energy singlet into two low energy triplets following photoexcitation). Here we present a study of the interface between singlet fission molecules and low-bandgap halide pervoskites. We briefly show a range of experiments screening for triplet transfer into a halide perovskite. However, in all cases triplet transfer was not observed. This motivated us to understand the halide perovskite/singlet fission interface better by carrying out first-principles calculations using tetracene and cesium lead iodide. We found that tetracene molecules/thin films preferentially orient themselves parallel to/perpendicular to the halide perovskite's surface, in a similar way to on other inorganic semiconductors. We present formation energies of all interfaces, which are significantly less favourable than for bulk tetracene, indicative of weak interaction at the interface. It was not possible to calculate excitonic states at the full interface due to computational limitations, so we instead present highly speculative toy interfaces between tetracene and a halide-perovskite-like structure. In these models we focus on replicating tetracene's electronic states correctly. We find that tetracene's singlet and triplet energies are comparable to that of bulk tetracene, and the triplet is strongly localised on a single tetracene molecule, even at an interface. Our work provides new understanding of the interface between tetracene and halide perovskites, explores the potential for modelling excitons at interfaces, and begins to explain the difficulties in extracting triplets directly into inorganic semiconductors.
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Submitted 6 December, 2021;
originally announced December 2021.
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Relaxed current matching requirements in highly luminescent perovskite tandem solar cells and their fundamental efficiency limits
Authors:
Alan R. Bowman,
Felix Lang,
Yu-Hsien Chiang,
Alberto Jiménez-Solano,
Kyle Frohna,
Giles E. Eperon,
Edoardo Ruggeri,
Mojtaba Abdi-Jalebi,
Miguel Anaya,
Bettina V. Lotsch,
Samuel D. Stranks
Abstract:
Here we use time-resolved and steady-state optical spectroscopy on state-of-the-art low- and high-bandgap perovskite films for tandems to quantify intrinsic recombination rates and absorption coefficients. We apply these data to calculate the limiting efficiency of perovskite-silicon and all-perovskite two-terminal tandems employing currently available bandgap materials as 42.0 % and 40.8 % respec…
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Here we use time-resolved and steady-state optical spectroscopy on state-of-the-art low- and high-bandgap perovskite films for tandems to quantify intrinsic recombination rates and absorption coefficients. We apply these data to calculate the limiting efficiency of perovskite-silicon and all-perovskite two-terminal tandems employing currently available bandgap materials as 42.0 % and 40.8 % respectively. By including luminescence coupling between sub-cells, i.e. the re-emission of photons from the high-bandgap sub-cell and their absorption in the low-bandgap sub-cell, we reveal the stringent need for current matching is relaxed when the high-bandgap sub-cell is a luminescent perovskite compared to calculations that do not consider luminescence coupling. We show luminescence coupling becomes important in all-perovskite tandems when charge carrier trap** rates are < 10$^{6}$ s$^{-1}$ (corresponding to carrier lifetimes longer than 1 $μ$s at low excitation densities) in the high-bandgap sub-cell, which is lowered to 10$^{5}$ s$^{-1}$ in the better-bandgap-matched perovskite-silicon cells. We demonstrate luminescence coupling endows greater flexibility in both sub-cell thicknesses, increased tolerance to different spectral conditions and a reduction in the total thickness of light absorbing layers. To maximally exploit luminescence coupling we reveal a key design rule for luminescent perovskite-based tandems: the high-bandgap sub-cell should always have the higher short-circuit current. Importantly, this can be achieved by reducing the bandgap or increasing the thickness in the high-bandgap sub-cell with minimal reduction in efficiency, thus allowing for wider, unstable bandgap compositions (>1.7 eV) to be avoided. Finally, we experimentally visualise luminescence coupling in an all-perovskite tandem device stack through cross-section luminescence images.
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Submitted 1 December, 2020;
originally announced December 2020.
