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Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation do**
Authors:
Y. Z. Chen,
F. Trier,
T. Wijnands,
R. J. Green,
N. Gauquelin,
R. Egoavil,
D. V. Christensen,
G. Koster,
M. Huijben,
N. Bovet,
S. Macke,
F. He,
R. Sutarto,
N. H. Andersen,
G. E. D. K. Prawiroatmodjo,
T. S. Jespersen,
J. A. Sulpizio,
M. Honig,
S. Linderoth,
S. Ilani,
J. Verbeeck,
G. Van Tendeloo,
G. Rijnders,
G. A. Sawatzky,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon…
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The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation do** of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.
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Submitted 22 April, 2015;
originally announced April 2015.
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Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface
Authors:
Yunzhong Chen,
Felix Trier,
Takeshi Kasama,
Dennis V. Christensen,
Nicolas Bovet,
Han Li,
Zoltan I. Balogh,
Karl T. S. Thydén,
Wei Zhang,
Sadegh Yazdi,
Poul Norby,
Nini Pryds,
Søren Linderoth
Abstract:
The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,0…
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The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.
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Submitted 23 February, 2015;
originally announced February 2015.
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Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces
Authors:
Y. Z. Chen,
N. Bovet,
T. Kasama,
W. W. Gao,
S. Yazdi,
C. Ma,
N. Pryds,
S. Linderoth
Abstract:
Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.
Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.
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Submitted 13 December, 2013;
originally announced December 2013.
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A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
Authors:
Y. Z. Chen,
N. Bovet,
F. Trier,
D. V. Christensen,
F. M. Qu,
N. H. Andersen,
T. Kasama,
W. Zhang,
R. Giraud,
J. Dufouleur,
T. S. Jespersen,
J. R. Sun,
A. Smith,
J. Nygård,
L. Lu,
B. Büchner,
B. G. Shen,
S. Linderoth,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remain…
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The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
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Submitted 1 April, 2013;
originally announced April 2013.
