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Showing 1–7 of 7 results for author: Boter, J

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  1. arXiv:2110.00189  [pdf, other

    quant-ph cond-mat.mes-hall

    Spiderweb array: A sparse spin-qubit array

    Authors: Jelmer M. Boter, Juan P. Dehollain, Jeroen P. G. van Dijk, Yuanxing Xu, Toivo Hensgens, Richard Versluis, Henricus W. L. Naus, James S. Clarke, Menno Veldhorst, Fabio Sebastiano, Lieven M. K. Vandersypen

    Abstract: One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowin… ▽ More

    Submitted 24 August, 2022; v1 submitted 30 September, 2021; originally announced October 2021.

    Comments: 19 pages, 16 figures

    Journal ref: Phys. Rev. Applied 18, 024053 (2022)

  2. arXiv:2101.12650  [pdf, other

    cond-mat.mes-hall quant-ph

    Qubits made by advanced semiconductor manufacturing

    Authors: A. M. J. Zwerver, T. Krähenmann, T. F. Watson, L. Lampert, H. C. George, R. Pillarisetty, S. A. Bojarski, P. Amin, S. V. Amitonov, J. M. Boter, R. Caudillo, D. Corras-Serrano, J. P. Dehollain, G. Droulers, E. M. Henry, R. Kotlyar, M. Lodari, F. Luthi, D. J. Michalak, B. K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O. K. Zietz , et al. (4 additional authors not shown)

    Abstract: Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr… ▽ More

    Submitted 29 January, 2021; originally announced January 2021.

    Comments: 23 pages, 4 figures, 12 supplementary figures

    Journal ref: Nature Electronics 5, 184-190 (2022)

  3. arXiv:1912.06461  [pdf

    quant-ph cond-mat.mes-hall physics.app-ph

    A sparse spin qubit array with integrated control electronics

    Authors: Jelmer M. Boter, Juan P. Dehollain, Jeroen P. G. van Dijk, Toivo Hensgens, Richard Versluis, James S. Clarke, Menno Veldhorst, Fabio Sebastiano, Lieven M. K. Vandersypen

    Abstract: Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer.

    Submitted 13 December, 2019; originally announced December 2019.

    Comments: Paper accompanying an invited talk at the 2019 IEEE International Electron Devices Meeting (IEDM), December 7-11, 2019

    Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4 (2020)

  4. arXiv:1909.06575  [pdf, other

    cond-mat.mes-hall

    Quantum Dot Arrays in Silicon and Germanium

    Authors: W. I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx, J. M. Boter, L. Petit, S. V. Amitonov, M. Lodari, B. Paquelet Wuetz, C. Volk, S. Philips, G. Droulers, N. Kalhor, F. van Riggelen, D. Brousse, A. Sammak, L. M. K. Vandersypen, G. Scappucci, M. Veldhorst

    Abstract: Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb… ▽ More

    Submitted 14 September, 2019; originally announced September 2019.

    Comments: Main text: 8 pages, 6 figures. Supporting Info: 5 pages, 3 figures

    Journal ref: Appl. Phys. Lett. 116, 080501 (2020)

  5. arXiv:1906.02731  [pdf, other

    cond-mat.mes-hall quant-ph

    Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

    Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

    Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More

    Submitted 6 June, 2019; originally announced June 2019.

    Comments: 6+6 pages, 4+3 figures

    Journal ref: Phys. Rev. B 101, 235133 (2020)

  6. Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$

    Authors: D. Sabbagh, N. Thomas, J. Torres, R. Pillarisetty, P. Amin, H. C. George, K. Singh, A. Budrevich, M. Robinson, D. Merrill, L. Ross, J. Roberts, L. Lampert, L. Massa, S. Amitonov, J. Boter, G. Droulers, H. G. J. Eenink, M. van Hezel, D. Donelson, M. Veldhorst, L. M. K. Vandersypen, J. S. Clarke, G. Scappucci

    Abstract: We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of… ▽ More

    Submitted 21 January, 2019; v1 submitted 15 October, 2018; originally announced October 2018.

    Comments: 5 pages, 3 figures

    Journal ref: Phys. Rev. Applied 12, 014013 (2019)

  7. Spin lifetime and charge noise in hot silicon quantum dot qubits

    Authors: L. Petit, J. M. Boter, H. G. J. Eenink, G. Droulers, M. L. V. Tagliaferri, R. Li, D. P. Franke, K. J. Singh, J. S. Clarke, R. N. Schouten, V. V. Dobrovitski, L. M. K. Vandersypen, M. Veldhorst

    Abstract: We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise… ▽ More

    Submitted 1 September, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

    Comments: 8 pages, 6 figures

    Journal ref: Phys. Rev. Lett. 121, 076801 (2018)