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Spiderweb array: A sparse spin-qubit array
Authors:
Jelmer M. Boter,
Juan P. Dehollain,
Jeroen P. G. van Dijk,
Yuanxing Xu,
Toivo Hensgens,
Richard Versluis,
Henricus W. L. Naus,
James S. Clarke,
Menno Veldhorst,
Fabio Sebastiano,
Lieven M. K. Vandersypen
Abstract:
One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowin…
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One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowing for a significant reduction in the number of signal connections at the chip boundary. By arranging the qubits in a two-dimensional (2D) array with $\sim$12 $μ$m pitch, we create space to implement locally integrated sample-and-hold circuits. This allows to offset the inhomogeneities in the potential landscape across the array and to globally share the majority of the control signals for qubit operations. We make use of advanced circuit modeling software to go beyond conceptual drawings of the component layout, to assess the feasibility of the scheme through a concrete floor plan, including estimates of footprints for quantum and classical electronics, as well as routing of signal lines across the chip using different interconnect layers. We make use of local demultiplexing circuits to achieve an efficient signal-connection scaling leading to a Rent's exponent as low as $p = 0.43$. Furthermore, we use available data from state-of-the-art spin qubit and microelectronics technology development, as well as circuit models and simulations, to estimate the operation frequencies and power consumption of a million-qubit processor. This work presents a novel and complementary approach to previously proposed architectures, focusing on a feasible scheme to integrating quantum and classical hardware, and significantly closing the gap towards a fully CMOS-compatible quantum computer implementation.
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Submitted 24 August, 2022; v1 submitted 30 September, 2021;
originally announced October 2021.
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Qubits made by advanced semiconductor manufacturing
Authors:
A. M. J. Zwerver,
T. Krähenmann,
T. F. Watson,
L. Lampert,
H. C. George,
R. Pillarisetty,
S. A. Bojarski,
P. Amin,
S. V. Amitonov,
J. M. Boter,
R. Caudillo,
D. Corras-Serrano,
J. P. Dehollain,
G. Droulers,
E. M. Henry,
R. Kotlyar,
M. Lodari,
F. Luthi,
D. J. Michalak,
B. K. Mueller,
S. Neyens,
J. Roberts,
N. Samkharadze,
G. Zheng,
O. K. Zietz
, et al. (4 additional authors not shown)
Abstract:
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr…
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Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer
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Submitted 29 January, 2021;
originally announced January 2021.
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A sparse spin qubit array with integrated control electronics
Authors:
Jelmer M. Boter,
Juan P. Dehollain,
Jeroen P. G. van Dijk,
Toivo Hensgens,
Richard Versluis,
James S. Clarke,
Menno Veldhorst,
Fabio Sebastiano,
Lieven M. K. Vandersypen
Abstract:
Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer.
Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer.
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Submitted 13 December, 2019;
originally announced December 2019.
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Quantum Dot Arrays in Silicon and Germanium
Authors:
W. I. L. Lawrie,
H. G. J. Eenink,
N. W. Hendrickx,
J. M. Boter,
L. Petit,
S. V. Amitonov,
M. Lodari,
B. Paquelet Wuetz,
C. Volk,
S. Philips,
G. Droulers,
N. Kalhor,
F. van Riggelen,
D. Brousse,
A. Sammak,
L. M. K. Vandersypen,
G. Scappucci,
M. Veldhorst
Abstract:
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb…
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Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlap** gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.
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Submitted 14 September, 2019;
originally announced September 2019.
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Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences
Authors:
Jelmer M. Boter,
Xiao Xue,
Tobias S. Krähenmann,
Thomas F. Watson,
Vickram N. Premakumar,
Daniel R. Ward,
Donald E. Savage,
Max G. Lagally,
Mark Friesen,
Susan N. Coppersmith,
Mark A. Eriksson,
Robert Joynt,
Lieven M. K. Vandersypen
Abstract:
We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting…
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We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.
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Submitted 6 June, 2019;
originally announced June 2019.
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Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$
Authors:
D. Sabbagh,
N. Thomas,
J. Torres,
R. Pillarisetty,
P. Amin,
H. C. George,
K. Singh,
A. Budrevich,
M. Robinson,
D. Merrill,
L. Ross,
J. Roberts,
L. Lampert,
L. Massa,
S. Amitonov,
J. Boter,
G. Droulers,
H. G. J. Eenink,
M. van Hezel,
D. Donelson,
M. Veldhorst,
L. M. K. Vandersypen,
J. S. Clarke,
G. Scappucci
Abstract:
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of…
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We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
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Submitted 21 January, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
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Spin lifetime and charge noise in hot silicon quantum dot qubits
Authors:
L. Petit,
J. M. Boter,
H. G. J. Eenink,
G. Droulers,
M. L. V. Tagliaferri,
R. Li,
D. P. Franke,
K. J. Singh,
J. S. Clarke,
R. N. Schouten,
V. V. Dobrovitski,
L. M. K. Vandersypen,
M. Veldhorst
Abstract:
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise…
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We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.
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Submitted 1 September, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.