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Unveiling the inter-layer interaction in a 1H/1T TaS$_2$ van de Waals heterostructure
Authors:
Cosme G. Ayani,
M. Bosnar,
F. Calleja,
Andrés Pinar Solé,
O. Stetsovych,
Iván M. Ibarburu,
Clara Rebanal,
Manuela Garnica,
Rodolfo Miranda,
M. M. Otrokov,
M. Ondráček,
Pavel Jelínek,
A. Arnau,
Amadeo L. Vázquez de Parga
Abstract:
This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The con…
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This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The conventional explanation relying on tunneling effects proves insufficient. Through a comprehensive investigation combining lowtemperature scanning tunneling microscopy, scanning tunneling spectroscopy, non-contact atomic force microscopy, and firstprinciples calculations, we propose an alternative interpretation. The transparency effect arises from a weak yet substantial electronic coupling between the 1H and 1T layers, challenging prior understanding of the system. Our results highlight the critical role played by interlayer electronic interactions in van der Waals heterostructures to determine the final ground states of the systems.
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Submitted 26 February, 2024;
originally announced February 2024.
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High Chern number van der Waals magnetic topological multilayers MnBi$_2$Te$_4$/hBN
Authors:
Mihovil Bosnar,
Alexandra Yu. Vyazovskaya,
Evgeniy K. Petrov,
Evgueni V. Chulkov,
Mikhail M. Otrokov
Abstract:
Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, b…
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Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution of this problem so far, with the majority of existing Chern insulators showing $C=1$. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-$C$ Chern insulator state in MnBi$_2$Te$_4$/hBN van der Waals multilayer heterostructures. We show that a stack of $n$ MnBi$_2$Te$_4$ films with $C=1$ intercalated by hBN monolayers gives rise to a high Chern number state with $C=n$, characterized by $n$ chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance $S_{xy}= C e^2/h$. Our results therefore pave way to practical high-$C$ quantized Hall systems.
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Submitted 27 December, 2022;
originally announced December 2022.
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Nodal-line driven anomalous susceptibility in ZrSiS
Authors:
Bruno Gudac,
Markus Kriener,
Yuriy V. Sharlai,
Mihovil Bosnar,
Filip Orbanić,
Grigorii P. Mikitik,
Akio Kimura,
Ivan Kokanović,
Mario Novak
Abstract:
We demonstrate a unique approach to test the signature of the nodal-line physics by thermodynamic methods. By measuring magnetic susceptibility in ZrSiS we found an intriguing temperature-driven crossover from dia- to paramagnetic behavior. We show that the anomalous behavior represents a real thermodynamic signature of the underlying nodal-line physics through the means o chemical pressure (isova…
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We demonstrate a unique approach to test the signature of the nodal-line physics by thermodynamic methods. By measuring magnetic susceptibility in ZrSiS we found an intriguing temperature-driven crossover from dia- to paramagnetic behavior. We show that the anomalous behavior represents a real thermodynamic signature of the underlying nodal-line physics through the means o chemical pressure (isovalent substitution of Zr for Hf), quantum oscillations, and theoretical model ng. The anomalous part of the susceptibility is orbital by nature, and it arises due to the vicinity of the Fermi level to a degeneracy point created by the crossing of two nodal lines. Furthermore, an unexpected Lifshitz topological transition at the degeneracy point is revealed by tuning the Ferm level. The present findings in ZrSiS give a new and attractive starting point for various nodal-lin physics-related phenomena to be tested by thermodynamic methods in other related materials.
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Submitted 6 June, 2022;
originally announced June 2022.
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Proximity-induced magnetization in graphene: Towards efficient spin gating
Authors:
Mihovil Bosnar,
Ivor Lončarić,
P. Lazić,
K. D. Belashchenko,
Igor Žutić
Abstract:
Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from…
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Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene. We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the \Co/\Pt/\Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties.
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Submitted 30 October, 2020; v1 submitted 13 February, 2020;
originally announced February 2020.
