Showing 1–29 of 29 results for author: Bosco, S

A coherence sweet spot with enhanced dipolar coupling

Authors: Jann H. Ungerer, Alessia Pally, Stefano Bosco, Artem Kononov, Deepankar Sarmah, Sebastian Lehmann, Claes Thelander, Ville F. Maisi, Pasquale Scarlino, Daniel Loss, Andreas Baumgartner, Christian Schönenberger

Abstract: Qubits require a compromise between operation speed and coherence. Here, we demonstrate a compromise-free singlet-triplet (ST) qubit, where the qubit couples maximally to the driving field while simultaneously coupling minimally to the dominant noise sources. The qubit is implemented in a crystal-phase defined double-quantum dot in an InAs nanowire. Using a superconducting resonator, we measure th… ▽ More Qubits require a compromise between operation speed and coherence. Here, we demonstrate a compromise-free singlet-triplet (ST) qubit, where the qubit couples maximally to the driving field while simultaneously coupling minimally to the dominant noise sources. The qubit is implemented in a crystal-phase defined double-quantum dot in an InAs nanowire. Using a superconducting resonator, we measure the spin-orbit interaction (SOI) gap, the spin-photon coupling strength and the qubit decoherence rate as a function of the in-plane magnetic-field orientation. We demonstrate a spin qubit sweet spot maximizing the dipolar coupling and simultaneously minimizing the decoherence. Our theoretical description postulates phonons as the most likely dominant noise source. The compromise-free sweet spot originates from the SOI suggesting that it is not restricted to this material platform, but might find applications in any material with SOI. These findings pave the way for enhanced engineering of these nanomaterials for next-generation qubit technologies. △ Less

Submitted 29 May, 2024; v1 submitted 17 May, 2024; originally announced May 2024.

Compromise-Free Scaling of Qubit Speed and Coherence

Authors: Miguel J. Carballido, Simon Svab, Rafael S. Eggli, Taras Patlatiuk, Pierre Chevalier Kwon, Jonas Schuff, Rahel M. Kaiser, Leon C. Camenzind, Ang Li, Natalia Ares, Erik P. A. M Bakkers, Stefano Bosco, J. Carlos Egues, Daniel Loss, Dominik M. Zumbühl

Abstract: Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and cohere… ▽ More Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and coherence time - even though the speed and coherence of various qubits can differ by up to 8 orders of magnitude. This is the qubit speed-coherence dilemma: qubits are either coherent but slow or fast but short-lived. Here, we demonstrate a qubit for which we can triple the speed while simultaneously quadrupling the Hahn-echo coherence time when tuning a local electric field. In this way, the qubit speed and coherence scale together without compromise on either quantity, boosting the Q-factor by over an order of magnitude. Our qubit is a hole spin in a Ge/Si core/shell nanowire providing strong 1D confinement, resulting in the direct Rashba spin-orbit interaction. Due to Heavy-hole light-hole mixing a maximum of the spin-orbit strength is reached at finite electrical field. At the local maximum, charge fluctuations are decoupled from the qubit and coherence is enhanced, yet the drive speed becomes maximal. Our proof-of-concept experiment shows that a properly engineered qubit can be made faster and simultaneously more coherent, removing an important roadblock. Further, it demonstrates that through all-electrical control a qubit can be sped up, without coupling more strongly to the electrical noise environment. As charge fluctuators are unavoidable in semiconductors and all-electrical control is highly scalable, our results improve the prospects for quantum computing in Si and Ge. △ Less

Submitted 22 May, 2024; v1 submitted 11 February, 2024; originally announced February 2024.

Comments: Main: 6 pages with 3 display items plus 2 pages for references and methods Supplementary: 12 pages with 7 display items

High-fidelity spin qubit shuttling via large spin-orbit interaction

Authors: Stefano Bosco, Ji Zou, Daniel Loss

Abstract: Shuttling spins with high fidelity is a key requirement to scale up semiconducting quantum computers, enabling qubit entanglement over large distances and favoring the integration of control electronics on-chip. To decouple the spin from the unavoidable charge noise, state-of-the-art spin shuttlers try to minimize the inhomogeneity of the Zeeman field. However, this decoupling is challenging in ot… ▽ More Shuttling spins with high fidelity is a key requirement to scale up semiconducting quantum computers, enabling qubit entanglement over large distances and favoring the integration of control electronics on-chip. To decouple the spin from the unavoidable charge noise, state-of-the-art spin shuttlers try to minimize the inhomogeneity of the Zeeman field. However, this decoupling is challenging in otherwise promising quantum computing platforms such as hole spin qubits in silicon and germanium, characterized by a large spin-orbit interaction and electrically-tunable qubit frequency. In this work, we show that, surprisingly, the large inhomogeneity of the Zeeman field stabilizes the coherence of a moving spin state, thus enabling high-fidelity shuttling also in these systems. We relate this enhancement in fidelity to the deterministic dynamics of the spin which filters out the dominant low-frequency contributions of the charge noise. By simulating several different scenarios and noise sources, we show that this is a robust phenomenon generally occurring at large field inhomogeneity. By appropriately adjusting the motion of the quantum dot, we also design realistic protocols enabling faster and more coherent spin shuttling. Our findings are generally applicable to a wide range of setups and could pave the way toward large-scale quantum processors. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Strong hole-photon coupling in planar Ge: probing the charge degree and Wigner molecule states

Authors: Franco De Palma, Fabian Oppliger, Won** Jang, Stefano Bosco, Marián Janík, Stefano Calcaterra, Georgios Katsaros, Giovanni Isella, Daniel Loss, Pasquale Scarlino

Abstract: Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling.… ▽ More Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in a planar Ge, and microwave photons in a high-impedance ($Z_\mathrm{r} = 1.3 ~ \mathrm{k}Ω$) superconducting quantum interference device (SQUID) array resonator. Our investigation reveals vacuum-Rabi splittings with coupling strengths up to $g_{0}/2π= 260 ~ \mathrm{MHz}$, and a cooperativity of $C \sim 100$, dependent on DQD tuning, confirming the strong charge-photon coupling regime within planar Ge. Furthermore, utilizing the frequency tunability of our resonator, we explore the quenched energy splitting associated with strongly-correlated Wigner molecule (WM) states that emerge in Ge QDs. The observed enhanced coherence of the WM excited state signals the presence of distinct symmetries within related spin functions, serving as a precursor to the strong coupling between photons and spin-charge hybrid qubits in planar Ge. This work paves the way towards coherent quantum connections between remote hole qubits in planar Ge, required to scale up hole-based quantum processors. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: 22 pages, 12 figures

Valley-free silicon fins by shear strain

Authors: Christoph Adelsberger, Stefano Bosco, Jelena Klinovaja, Daniel Loss

Abstract: Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of computational energies, where the quantum information can leak. The energy of the valley states - typically 0.1 meV - depends on hardly controllable atomistic disord… ▽ More Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of computational energies, where the quantum information can leak. The energy of the valley states - typically 0.1 meV - depends on hardly controllable atomistic disorder and still constitutes a fundamental limit to the scalability of these architectures. In this work, we introduce designs of CMOS-compatible silicon fin field-effect transistors that enhance the energy gap to non-computational states by more than one order of magnitude. Our devices comprise realistic silicon-germanium nanostructures with a large shear strain, where troublesome valley degrees of freedom are completely removed. The energy of non-computational states is therefore not affected by unavoidable atomistic disorder and can further be tuned in-situ by applied electric fields. Our design ideas are directly applicable to a variety of setups and will offer a blueprint towards silicon-based large-scale quantum processors. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Spatially correlated classical and quantum noise in driven qubits: The good, the bad, and the ugly

Authors: Ji Zou, Stefano Bosco, Daniel Loss

Abstract: Correlated noise across multiple qubits poses a significant challenge for achieving scalable and fault-tolerant quantum processors. Despite recent experimental efforts to quantify this noise in various qubit architectures, a comprehensive understanding of its role in qubit dynamics remains elusive. Here, we present an analytical study of the dynamics of driven qubits under spatially correlated noi… ▽ More Correlated noise across multiple qubits poses a significant challenge for achieving scalable and fault-tolerant quantum processors. Despite recent experimental efforts to quantify this noise in various qubit architectures, a comprehensive understanding of its role in qubit dynamics remains elusive. Here, we present an analytical study of the dynamics of driven qubits under spatially correlated noise, including both Markovian and non-Markovian noise. Surprisingly, we find that, while correlated classical noise only leads to correlated decoherence without increasing the quantum coherence in the system, the correlated quantum noise can be exploited to generate entanglement. In particular, we reveal that, in the quantum limit, pure dephasing noise induces a coherent long-range two-qubit Ising interaction that correlates distant qubits. In contrast, for purely transverse noise when qubits are subjected to coherent drives, the correlated quantum noise induces both coherent symmetric exchange and Dzyaloshinskii-Moriya interaction between the qubits, as well as correlated relaxation, both of which give rise to significant entanglement. Remarkably, in this case, we uncover that the system exhibits distinct dynamical phases in different parameter regimes. Finally, we reveal the impact of spatio-temporally correlated 1/f noise on the decoherence rate, and how its temporal correlations restore lost entanglement. Our analysis not only offers critical insights into designing effective error mitigation strategies to reduce harmful effects of correlated noise, but also enables tailored protocols to leverage and harness noise-induced correlations for quantum information processing. △ Less

Submitted 6 August, 2023; originally announced August 2023.

Comments: 26 pages, 11 figures

Dissipative Spin-wave Diode and Nonreciprocal Magnonic Amplifier

Authors: Ji Zou, Stefano Bosco, Even Thingstad, Jelena Klinovaja, Daniel Loss

Abstract: We propose an experimentally feasible dissipative spin-wave diode comprising two magnetic layers coupled via a non-magnetic spacer. We theoretically demonstrate that the spacer mediates not only coherent interactions but also dissipative coupling. Interestingly, an appropriately engineered dissipation engenders a nonreciprocal device response, facilitating the realization of a spin-wave diode. Thi… ▽ More We propose an experimentally feasible dissipative spin-wave diode comprising two magnetic layers coupled via a non-magnetic spacer. We theoretically demonstrate that the spacer mediates not only coherent interactions but also dissipative coupling. Interestingly, an appropriately engineered dissipation engenders a nonreciprocal device response, facilitating the realization of a spin-wave diode. This diode permits wave propagation in one direction alone, given that the coherent Dzyaloshinskii- Moriya (DM) interaction is balanced with the dissipative coupling. The polarity of the diode is determined by the sign of the DM interaction. Furthermore, we show that when the magnetic layers undergo incoherent pum**, the device operates as a unidirectional spin-wave amplifier. The amplifier gain is augmented by cascading multiple magnetic bilayers. By extending our model to a one-dimensional ring structure, we establish a connection between the physics of spin-wave amplification and non-Hermitian topology. Our proposal opens up a new avenue for harnessing inherent dissipation in spintronic applications. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 13 pages including supplemental material; 4 figures

Journal ref: Phys. Rev. Lett. 132, 036701 (2024)

High-fidelity two-qubit gates of hybrid superconducting-semiconducting singlet-triplet qubits

Authors: Maria Spethmann, Stefano Bosco, Andrea Hofmann, Jelena Klinovaja, Daniel Loss

Abstract: Hybrid systems comprising superconducting and semiconducting materials are promising architectures for quantum computing. Superconductors induce long-range interactions between the spin degrees of freedom of semiconducting quantum dots. These interactions are widely anisotropic when the semiconductor material has strong spin-orbit interactions. We show that this anisotropy is tunable and enables f… ▽ More Hybrid systems comprising superconducting and semiconducting materials are promising architectures for quantum computing. Superconductors induce long-range interactions between the spin degrees of freedom of semiconducting quantum dots. These interactions are widely anisotropic when the semiconductor material has strong spin-orbit interactions. We show that this anisotropy is tunable and enables fast and high-fidelity two-qubit gates between singlet-triplet (ST) spin qubits. Our design is immune to leakage of the quantum information into noncomputational states and removes always-on interactions between the qubits, thus resolving key open challenges for these architectures. Our ST qubits do not require additional technologically demanding components nor fine-tuning of parameters. They operate at low magnetic fields of a few millitesla and are fully compatible with superconductors. By suppressing systematic errors in realistic devices, we estimate infidelities below $10^{-3}$, which could pave the way toward large-scale hybrid superconducting-semiconducting quantum processors. △ Less

Submitted 15 February, 2024; v1 submitted 11 April, 2023; originally announced April 2023.

Journal ref: Phys. Rev. B 109, 085303 (2024)

Phase driving hole spin qubits

Authors: Stefano Bosco, Simon Geyer, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, J. Carlos Egues, Andreas V. Kuhlmann, Daniel Loss

Abstract: The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubi… ▽ More The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly non-trivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor (Si FinFET), we demonstrate a controllable suppression of resonant Rabi oscillations, and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Quantum computing on magnetic racetracks with flying domain wall qubits

Authors: Ji Zou, Stefano Bosco, Banabir Pal, Stuart S. P. Parkin, Jelena Klinovaja, Daniel Loss

Abstract: Domain walls (DWs) on magnetic racetracks are at the core of the field of spintronics, providing a basic element for classical information processing. Here, we show that mobile DWs also provide a blueprint for large-scale quantum computers. Remarkably, these DW qubits showcase exceptional versatility, serving not only as stationary qubits, but also performing the role of solid-state flying qubits… ▽ More Domain walls (DWs) on magnetic racetracks are at the core of the field of spintronics, providing a basic element for classical information processing. Here, we show that mobile DWs also provide a blueprint for large-scale quantum computers. Remarkably, these DW qubits showcase exceptional versatility, serving not only as stationary qubits, but also performing the role of solid-state flying qubits that can be shuttled in an ultrafast way. We estimate that the DW qubits are long-lived because they can be operated at sweet spots to reduce potential noise sources. Single-qubit gates are implemented by moving the DW, and two-qubit entangling gates exploit naturally emerging interactions between different DWs. These gates, sufficient for universal quantum computing, are fully compatible with current state-of-the-art experiments on racetrack memories. Further, we discuss possible strategies for qubit readout and initialization, paving the way toward future quantum computers based on mobile topological textures on magnetic racetracks. △ Less

Submitted 12 September, 2023; v1 submitted 22 December, 2022; originally announced December 2022.

Comments: 14 pages, 7 figures

Journal ref: Phys. Rev. Research 5, 033166 (2023)

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Authors: Simon Geyer, Bence Hetényi, Stefano Bosco, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Daniel Loss, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor… ▽ More Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor industry, has remained an open challenge. Here, we demonstrate a controlled rotation two-qubit gate on hole spins in an industry-compatible device. A short gate time of 24 ns is achieved. The quantum logic exploits an exchange interaction that can be tuned from above 500 MHz to close-to-off. Significantly, the exchange is strikingly anisotropic. By develo** a general theory, we show that the anisotropy arises as a consequence of a strong spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 90 degrees. The exchange Hamiltonian no longer has Heisenberg form and is engineered in such a way that there is no trade-off between speed and fidelity of the two-qubit gate. This ideal behaviour applies over a wide range of magnetic field orientations rendering the concept robust with respect to variations from qubit to qubit. Our work brings hole spin qubits in silicon transistors a step closer to the realization of a large-scale quantum computer. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport

Authors: Renato M. A. Dantas, Henry F. Legg, Stefano Bosco, Daniel Loss, Jelena Klinovaja

Abstract: We investigate non-linear transport signatures stemming from linear and cubic spin-orbit interactions in one- and two-dimensional systems. The analytical zero-temperature response to external fields is complemented by finite temperature numerical analysis, establishing a way to distinguish between linear and cubic spin-orbit interactions. We also propose a protocol to determine the relevant materi… ▽ More We investigate non-linear transport signatures stemming from linear and cubic spin-orbit interactions in one- and two-dimensional systems. The analytical zero-temperature response to external fields is complemented by finite temperature numerical analysis, establishing a way to distinguish between linear and cubic spin-orbit interactions. We also propose a protocol to determine the relevant material parameters from transport measurements attainable in realistic conditions, illustrated by values for Ge heterostructures. Our results establish a method for the fast benchmarking of spin-orbit properties in semiconductor nanostructures. △ Less

Submitted 11 October, 2022; originally announced October 2022.

Comments: 7 pages, 3 figures

Planar Josephson junctions in germanium: Effect of cubic spin-orbit interaction

Authors: Melina Luethi, Katharina Laubscher, Stefano Bosco, Daniel Loss, Jelena Klinovaja

Abstract: Planar Josephson junctions comprising semiconductors with strong spin-orbit interaction (SOI) are promising platforms to host Majorana bound states (MBSs). Previous works on MBSs in planar Josephson junctions have focused on electron gases, where SOI is linear in momentum. In contrast, a two-dimensional hole gas in planar germanium (Ge) exhibits SOI that is cubic in momentum. Nevertheless, we show… ▽ More Planar Josephson junctions comprising semiconductors with strong spin-orbit interaction (SOI) are promising platforms to host Majorana bound states (MBSs). Previous works on MBSs in planar Josephson junctions have focused on electron gases, where SOI is linear in momentum. In contrast, a two-dimensional hole gas in planar germanium (Ge) exhibits SOI that is cubic in momentum. Nevertheless, we show here that due to the particularly large SOI, Ge is a favorable material. Using a discretized model, we numerically simulate a Ge planar Josephson junction and demonstrate that also cubic SOI can lead to the emergence of MBSs. Interestingly, we find that the cubic SOI yields an asymmetric phase diagram as a function of the superconducting phase difference across the junction. We also find that trivial Andreev bound states can imitate the signatures of MBSs in a Ge planar Josephson junction, therefore making the experimental detection of MBSs difficult. We use experimentally realistic parameters to assess if the topological phase is accessible within experimental limitations. Our analysis shows that two-dimensional Ge is an auspicious candidate for topological phases. △ Less

Submitted 27 January, 2023; v1 submitted 26 September, 2022; originally announced September 2022.

Journal ref: Phys. Rev. B 107, 035435 (2023)

Enhanced orbital magnetic field effects in Ge hole nanowires

Authors: Christoph Adelsberger, Stefano Bosco, Jelena Klinovaja, Daniel Loss

Abstract: Hole semiconductor nanowires (NW) are promising platforms to host spin qubits and Majorana bound states for topological qubits because of their strong spin-orbit interactions (SOI). The properties of these systems depend strongly on the design of the cross section and on strain, as well as on external electric and magnetic fields. In this work, we analyze in detail the dependence of the SOI and… ▽ More Hole semiconductor nanowires (NW) are promising platforms to host spin qubits and Majorana bound states for topological qubits because of their strong spin-orbit interactions (SOI). The properties of these systems depend strongly on the design of the cross section and on strain, as well as on external electric and magnetic fields. In this work, we analyze in detail the dependence of the SOI and $g$ factors on the orbital magnetic field. We focus on magnetic fields aligned along the axis of the NW, where orbital effects are enhanced and result in a renormalization of the effective $g$ factor up to $400\,\%$, even at small values of magnetic field. We provide an exact analytical solution for holes in Ge NWs and we derive an effective low-energy model that enables us to investigate the effect of electric fields applied perpendicular to the NW. We also discuss in detail the role of strain, growth direction, and high energy valence bands in different architectures, including Ge/Si core/shell NWs, gate-defined one-dimensional channels in planar Ge, and curved Ge quantum wells. In core/shell NWs grown along the $[110]$ direction the $g$ factor can be twice larger than for other growth directions which makes this growth direction advantageous for Majorana bound states. Also curved Ge quantum wells feature large effective $g$ factors and SOI, again ideal for hosting Majorana bound states. Strikingly, because these quantities are independent of the electric field, hole spin qubits encoded in curved quantum wells are to good approximation not susceptible to charge noise, significantly boosting their coherence time. △ Less

Submitted 8 December, 2022; v1 submitted 25 July, 2022; originally announced July 2022.

Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots

Authors: Bence Hetényi, Stefano Bosco, Daniel Loss

Abstract: An anomalous energy splitting of spin triplet states at zero magnetic field has recently been measured in germanium quantum dots. This zero-field splitting could crucially alter the coupling between tunnel-coupled quantum dots, the basic building blocks of state-of-the-art spin-based quantum processors, with profound implications for semiconducting quantum computers. We develop an analytical model… ▽ More An anomalous energy splitting of spin triplet states at zero magnetic field has recently been measured in germanium quantum dots. This zero-field splitting could crucially alter the coupling between tunnel-coupled quantum dots, the basic building blocks of state-of-the-art spin-based quantum processors, with profound implications for semiconducting quantum computers. We develop an analytical model linking the zero-field splitting to spin-orbit interactions that are cubic in momentum. Such interactions naturally emerge in hole nanostructures, where they can also be tuned by external electric fields, and we find them to be particularly large in silicon and germanium, resulting in a significant zero-field splitting in the $μ$eV range. We confirm our analytical theory by numerical simulations of different quantum dots, also including other possible sources of zero-field splitting. Our findings are applicable to a broad range of current architectures encoding spin qubits and provide a deeper understanding of these materials, paving the way towards the next generation of semiconducting quantum processors. △ Less

Submitted 5 May, 2022; originally announced May 2022.

Hole spin qubits in thin curved quantum wells

Authors: Stefano Bosco, Daniel Loss

Abstract: Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long quantum dots with two tight confinement directions, when the driving field is aligned to the smooth direction. However, in these systems the lifetime of the qubit… ▽ More Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long quantum dots with two tight confinement directions, when the driving field is aligned to the smooth direction. However, in these systems the lifetime of the qubit is strongly limited by charge noise, a major issue in hole qubits. We propose here a different, scalable qubit design, compatible with planar CMOS technology, where the hole is confined in a curved germanium quantum well surrounded by silicon. This design takes full advantage of the strong spin-orbit interaction of holes, and at the same time suppresses charge noise in a wide range of configurations, enabling highly coherent, ultrafast qubit gates. While here we focus on a Si/Ge/Si curved quantum well, our design is also applicable to different semiconductors. Strikingly, these devices allow for ultrafast operations even in short quantum dots by a transversal electric field. This additional driving mechanism relaxes the demanding design constraints, and opens up a new way to reliably interface spin qubits in a single quantum dot to microwave photons. By considering state-of-the-art high-impedance resonators and realistic qubit designs, we estimate interaction strengths of a few hundreds of MHz, largely exceeding the decay rate of spins and photons. Reaching such a strong coupling regime in hole spin qubits will be a significant step towards high-fidelity entangling operations between distant qubits, as well as fast single-shot readout, and will pave the way towards the implementation of a large-scale semiconducting quantum processor. △ Less

Submitted 18 April, 2022; originally announced April 2022.

Fully tunable longitudinal spin-photon interactions in Si and Ge quantum dots

Authors: Stefano Bosco, Pasquale Scarlino, Jelena Klinovaja, Daniel Loss

Abstract: Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal interactions between qubits and microwave resonators, where the spin state is flipped by nearly resonant photons. However, these interactions cause back-action on t… ▽ More Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal interactions between qubits and microwave resonators, where the spin state is flipped by nearly resonant photons. However, these interactions cause back-action on the qubit, that yield unavoidable residual qubit-qubit couplings and significantly affect the gate fidelity. Strikingly, residual couplings vanish when spin-photon interactions are longitudinal and photons couple to the phase of the qubit. We show that large longitudinal interactions emerge naturally in state-of-the-art hole spin qubits. These interactions are fully tunable and can be parametrically modulated by external oscillating electric fields. We propose realistic protocols to measure these interactions and to implement fast and high-fidelity two-qubit entangling gates. These protocols work also at high temperatures, paving the way towards the implementation of large-scale quantum processors. △ Less

Submitted 31 March, 2022; originally announced March 2022.

Hole Spin Qubits in Ge Nanowire Quantum Dots: Interplay of Orbital Magnetic Field, Strain, and Growth Direction

Authors: Christoph Adelsberger, Mónica Benito, Stefano Bosco, Jelena Klinovaja, Daniel Loss

Abstract: Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the SOI in Ge semiconductors. We show that at the magnetic field values at which qubits are operated, orbital effects of magnetic fields can strongly affect the res… ▽ More Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the SOI in Ge semiconductors. We show that at the magnetic field values at which qubits are operated, orbital effects of magnetic fields can strongly affect the response of the spin qubit. We study one-dimensional hole systems in Ge under the influence of electric and magnetic fields applied perpendicularly to the device. In our theoretical description, we include these effects exactly. The orbital effects lead to a strong renormalization of the g-factor. We find a sweet-spot of the nanowire (NW) g-factor where charge noise is strongly suppressed and present an effective low-energy model that captures the dependence of the SOI on the electromagnetic fields. Moreover, we compare properties of NWs with square and circular cross-sections with ones of gate-defined one-dimensional channels in two-dimensional Ge heterostructures. Interestingly, the effective model predicts a flat band ground state for fine-tuned electric and magnetic fields. By considering a quantum dot (QD) harmonically confined by gates, we demonstrate that the NW g-factor sweet spot is retained in the QD. Our calculations reveal that this sweet spot can be designed to coincide with the maximum of the SOI, yielding highly coherent qubits with large Rabi frequencies. We also study the effective g-factor of NWs grown along different high symmetry axes and find that our model derived for isotropic semiconductors is valid for the most relevant growth directions of non-isotropic Ge NWs. Moreover, a NW grown along one of the three main crystallographic axes shows the largest SOI. Our results show that the isotropic approximation is not justified in Ge in all cases. △ Less

Submitted 28 October, 2021; originally announced October 2021.

Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots

Authors: Stefano Bosco, Daniel Loss

Abstract: Hole spin qubits are frontrunner platforms for scalable quantum computers, but state-of-the-art devices suffer from noise originating from the hyperfine interactions with nuclear defects. We show that these interactions have a highly tunable anisotropy that is controlled by device design and external electric fields. This tunability enables sweet spots where the hyperfine noise is suppressed by an… ▽ More Hole spin qubits are frontrunner platforms for scalable quantum computers, but state-of-the-art devices suffer from noise originating from the hyperfine interactions with nuclear defects. We show that these interactions have a highly tunable anisotropy that is controlled by device design and external electric fields. This tunability enables sweet spots where the hyperfine noise is suppressed by an order of magnitude and is comparable to isotopically purified materials. We identify surprisingly simple designs where the qubits are highly coherent and are largely unaffected by both charge and hyperfine noise. We find that the large spin-orbit interaction typical of elongated quantum dots not only speeds up qubit operations, but also dramatically renormalizes the hyperfine noise, altering qualitatively the dynamics of driven qubits and enhancing the fidelity of qubit gates. Our findings serve as guidelines to design high performance qubits for scaling up quantum computers. △ Less

Submitted 25 June, 2021; originally announced June 2021.

Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power

Authors: Stefano Bosco, Mónica Benito, Christoph Adelsberger, Daniel Loss

Abstract: Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design modification of planar devices that enhances these interactions by orders of magnitude and enables low power ultrafast qubit operations in the GHz range. Our approac… ▽ More Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design modification of planar devices that enhances these interactions by orders of magnitude and enables low power ultrafast qubit operations in the GHz range. Our approach is based on an asymmetric potential that strongly squeezes the quantum dot in one direction. This confinement-induced spin-orbit interaction does not rely on microscopic details of the device such as growth direction or strain, and could be turned on and off on demand in state-of-the-art qubits. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. B 104, 115425 (2021)

Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise

Authors: Stefano Bosco, Bence Hetényi, Daniel Loss

Abstract: The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in semiconductor quantum computing. Here, we show theoretically that hole Si FinFETs are not only very compatible with modern CMOS technology, but they present operational swe… ▽ More The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in semiconductor quantum computing. Here, we show theoretically that hole Si FinFETs are not only very compatible with modern CMOS technology, but they present operational sweet spots where the charge noise is completely removed. The presence of these sweet spots is a result of the interplay between the anisotropy of the material and the triangular shape of the FinFET cross-section, and it does not require an extreme fine-tuning of the electrostatics of the device. We present how the sweet spots appear in FinFETs grown along different crystallographic axes and we study in detail how the behaviour of these devices change when the cross-section area and aspect ratio are varied. We identify designs that maximize the qubit performance and could pave the way towards a scalable spin-based quantum computer. △ Less

Submitted 23 March, 2021; v1 submitted 18 November, 2020; originally announced November 2020.

Journal ref: PRX Quantum 2, 010348 (2021)

Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots

Authors: F. N. M. Froning, M. J. Rančić, B. Hetényi, S. Bosco, M. K. Rehmann, A. Li, E. P. A. M. Bakkers, F. A. Zwanenburg, D. Loss, D. M. Zumbühl, F. R. Braakman

Abstract: The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We exp… ▽ More The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We experimentally determine the strength of spin-orbit interaction of hole spins confined to a double quantum dot in a Ge/Si nanowire by measuring spin-mixing transitions inside a regime of spin-blockaded transport. We find a remarkably short spin-orbit length of $\sim$65 nm, comparable to the quantum dot length and the interdot distance. We additionally observe a large orbital effect of the applied magnetic field on the hole states, resulting in a large magnetic field dependence of the spin-mixing transition energies. Strikingly, together with these orbital effects, the strong spin-orbit interaction causes a significant enhancement of the $g$-factor with magnetic field.The large spin-orbit interaction strength demonstrated is consistent with the predicted direct Rashba spin-orbit interaction in this material system and is expected to enable ultrafast Rabi oscillations of spin qubits and efficient qubit-qubit interactions, as well as provide a platform suitable for studying Majorana zero modes. △ Less

Submitted 8 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Research 3, 013081 (2021)

Hardware-Encoding Grid States in a Non-Reciprocal Superconducting Circuit

Authors: Martin Rymarz, Stefano Bosco, Alessandro Ciani, David P. DiVincenzo

Abstract: We present a circuit design composed of a non-reciprocal device and Josephson junctions whose ground space is doubly degenerate and the ground states are approximate codewords of the Gottesman-Kitaev-Preskill (GKP) code. We determine the low-energy dynamics of the circuit by working out the equivalence of this system to the problem of a single electron confined in a two-dimensional plane and under… ▽ More We present a circuit design composed of a non-reciprocal device and Josephson junctions whose ground space is doubly degenerate and the ground states are approximate codewords of the Gottesman-Kitaev-Preskill (GKP) code. We determine the low-energy dynamics of the circuit by working out the equivalence of this system to the problem of a single electron confined in a two-dimensional plane and under the effect of strong magnetic field and of a periodic potential. We find that the circuit is naturally protected against the common noise channels in superconducting circuits, such as charge and flux noise, implying that it can be used for passive quantum error correction. We also propose realistic design parameters for an experimental realization and we describe possible protocols to perform logical one- and two-qubit gates, state preparation and readout. △ Less

Submitted 18 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. X 11, 011032 (2021)

Simulating moving cavities in superconducting circuits

Authors: Stefano Bosco, Joel Lindkvist, Göran Johansson

Abstract: We theoretically investigate the simulation of moving cavities in a superconducting circuit setup. In particular, we consider a recently proposed experimental scenario where the phase of the cavity field is used as a moving clock. By computing the error made when simulating the cavity trajectory with SQUIDs, we identify parameter regimes where the correspondence holds, and where time dilation, as… ▽ More We theoretically investigate the simulation of moving cavities in a superconducting circuit setup. In particular, we consider a recently proposed experimental scenario where the phase of the cavity field is used as a moving clock. By computing the error made when simulating the cavity trajectory with SQUIDs, we identify parameter regimes where the correspondence holds, and where time dilation, as well as corrections due to clock size and particle creation coefficients, are observable. These findings may serve as a guideline when performing experiments on simulation of moving cavities in superconducting circuits. △ Less

Submitted 19 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. A 100, 023817 (2019)

Transmission lines and resonators based on quantum Hall plasmonics: electromagnetic field, attenuation and coupling to qubits

Authors: Stefano Bosco, David P. DiVincenzo

Abstract: Quantum Hall edge states have some characteristic features that can prove useful to measure and control solid state qubits. For example, their high voltage to current ratio and their dissipationless nature can be exploited to manufacture low-loss microwave transmission lines and resonators with a characteristic impedance of the order of the quantum of resistance $h/e^2\sim 25\mathrm{kΩ}$. The high… ▽ More Quantum Hall edge states have some characteristic features that can prove useful to measure and control solid state qubits. For example, their high voltage to current ratio and their dissipationless nature can be exploited to manufacture low-loss microwave transmission lines and resonators with a characteristic impedance of the order of the quantum of resistance $h/e^2\sim 25\mathrm{kΩ}$. The high value of the impedance guarantees that the voltage per photon is high and for this reason high impedance resonators can be exploited to obtain larger values of coupling to systems with a small charge dipole, e.g. spin qubits. In this paper, we provide a microscopic analysis of the physics of quantum Hall effect devices capacitively coupled to external electrodes. The electrical current in these devices is carried by edge magnetoplasmonic excitations and by using a semiclassical model, valid for a wide range of quantum Hall materials, we discuss the spatial profile of the electromagnetic field in a variety of situations of interest. Also, we perform a numerical analysis to estimate the lifetime of these excitations and, from the numerics, we extrapolate a simple fitting formula which quantifies the $Q$ factor in quantum Hall resonators. We then explore the possibility of reaching the strong photon-qubit coupling regime, where the strength of the interaction is higher than the losses in the system. We compute the Coulomb coupling strength between the edge magnetoplasmons and singlet-triplet qubits, and we obtain values of the coupling parameter of the order $100\mathrm{MHz}$; comparing these values to the estimated attenuation in the resonator, we find that for realistic qubit designs the coupling can indeed be strong. △ Less

Submitted 5 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. B 100, 035416 (2019)

Transmission Lines and Meta-Materials based on Quantum Hall Plasmonics

Authors: Stefano Bosco, David P. DiVincenzo, David J. Reilly

Abstract: The characteristic impedance of a microwave transmission line is typically constrained to a value $Z_0$ = 50 $ Ω$, in-part because of the low impedance of free space and the limited range of permittivity and permeability realizable with conventional materials. Here we suggest the possibility of constructing high-impedance transmission lines by exploiting the plasmonic response of edge states assoc… ▽ More The characteristic impedance of a microwave transmission line is typically constrained to a value $Z_0$ = 50 $ Ω$, in-part because of the low impedance of free space and the limited range of permittivity and permeability realizable with conventional materials. Here we suggest the possibility of constructing high-impedance transmission lines by exploiting the plasmonic response of edge states associated with the quantum Hall effect in gated devices. We analyze various implementations of quantum Hall transmission lines based on distributed networks and lumped-element circuits, including a detailed account of parasitic capacitance and Coulomb drag effects, which can modify device performance. We additionally conceive of a meta-material structure comprising arrays of quantum Hall droplets and analyze its unusual properties. The realization of such structures holds promise for efficiently wiring-up quantum circuits on chip, as well as engineering strong coupling between semiconductor qubits and microwave photons. △ Less

Submitted 7 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Applied 12, 014030 (2019)

Non-reciprocal quantum Hall devices with driven edge magnetoplasmons in 2-dimensional materials

Authors: Stefano Bosco, David Peter DiVincenzo

Abstract: We develop a theory that describes the response of non-reciprocal devices employing 2-dimensional materials in the quantum Hall regime capacitively coupled to external electrodes. As the conduction in these devices is understood to be associated to the edge magnetoplasmons (EMPs), we first investigate the EMP problem by using the linear response theory in the random phase approximation. Our model… ▽ More We develop a theory that describes the response of non-reciprocal devices employing 2-dimensional materials in the quantum Hall regime capacitively coupled to external electrodes. As the conduction in these devices is understood to be associated to the edge magnetoplasmons (EMPs), we first investigate the EMP problem by using the linear response theory in the random phase approximation. Our model can incorporate several cases, that were often treated on different grounds in literature. In particular, we analyze plasmonic excitations supported by smooth and sharp confining potential in 2-dimensional electron gas, and in monolayer graphene, and we point out the similarities and differences in these materials. We also account for a general time-dependent external drive applied to the system. Finally, we describe the behavior of a non-reciprocal quantum Hall device: the response contains additional resonant features, which were not foreseen from previous models. △ Less

Submitted 29 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 95, 195317 (2017)

A model study of present-day Hall-effect circulators

Authors: Benedikt Placke, Stefano Bosco, David P. DiVincenzo

Abstract: Stimulated by the recent implementation of a three-port Hall-effect microwave circulator of Mahoney et al. (MEA), we present model studies of the performance of this device. Our calculations are based on the capacitive-coupling model of Viola and DiVincenzo (VD). Based on conductance data from a typical Hall-bar device obtained from a two-dimensional electron gas (2DEG) in a magnetic field, we num… ▽ More Stimulated by the recent implementation of a three-port Hall-effect microwave circulator of Mahoney et al. (MEA), we present model studies of the performance of this device. Our calculations are based on the capacitive-coupling model of Viola and DiVincenzo (VD). Based on conductance data from a typical Hall-bar device obtained from a two-dimensional electron gas (2DEG) in a magnetic field, we numerically solve the coupled field-circuit equations to calculate the expected performance of the circulator, as determined by the $S$ parameters of the device when coupled to 50$Ω$ ports, as a function of frequency and magnetic field. Above magnetic fields of 1.5T, for which a typical 2DEG enters the quantum Hall regime (corresponding to a Landau-level filling fraction $ν$ of 20), the Hall angle $θ_H=\tan^{-1}σ_{xy}/σ_{xx}$ always remains close to $90^\circ$, and the $S$ parameters are close to the analytic predictions of VD for $θ_H=π/2$. As anticipated by VD, MEA find the device to have rather high (k$Ω$) impedance, and thus to be extremely mismatched to $50Ω$, requiring the use of impedance matching. We incorporate the lumped matching circuits of MEA in our modeling and confirm that they can produce excellent circulation, although confined to a very small bandwidth. We predict that this bandwidth is significantly improved by working at lower magnetic field when the Landau index is high, e.g. $ν=20$, and the impedance mismatch is correspondingly less extreme. Our modeling also confirms the observation of MEA that parasitic port-to-port capacitance can produce very interesting countercirculation effects. △ Less

Submitted 30 September, 2016; originally announced September 2016.

Self impedance matched Hall-effect gyrators and circulators

Authors: Stefano Bosco, Federica Haupt, David P. DiVincenzo

Abstract: We present a model study of an alternative implementation of a two-port Hall-effect microwave gyrator. Our set-up involves three electrodes, one of which acts as a common ground for the others. Based on the capacitive-coupling model of Viola and DiVincenzo, we analyze the performance of the device and we predict that ideal gyration can be achieved at specific frequencies. Interestingly, the impeda… ▽ More We present a model study of an alternative implementation of a two-port Hall-effect microwave gyrator. Our set-up involves three electrodes, one of which acts as a common ground for the others. Based on the capacitive-coupling model of Viola and DiVincenzo, we analyze the performance of the device and we predict that ideal gyration can be achieved at specific frequencies. Interestingly, the impedance of the three-terminal gyrator can be made arbitrarily small for certain coupling strengths, so that no auxiliary impedance matching is required. Although the bandwidth of the device shrinks as the impedance decreases, it can be improved by reducing the magnetic field; it can be realistically increased up to $ 150 \mathrm{MHz}$ at $50\mathrmΩ$ by working at filling factor $ν=10$. We examine also the effects of the parasitic capacitive coupling between electrodes and we find that, although in general they strongly influence the response of device, their effect is negligible at low impedance. Finally, we analyze an interferometric implementation of a circulator, which incorporates the gyrator in a Mach-Zender-like construction. Perfect circulation in both directions can be achieved, depending on frequency and on the details of the interferometer. △ Less

Submitted 21 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. Applied 7, 024030 (2017)