Efficient Photonic Integration of Diamond Color Centers and Thin-Film Lithium Niobate
Authors:
Daniel Riedel,
Hope Lee,
Jason F. Herrmann,
Jakob Grzesik,
Vahid Ansari,
Jean-Michel Borit,
Hubert S. Stokowski,
Shahriar Aghaeimeibodi,
Haiyu Lu,
Patrick J. McQuade,
Nick A. Melosh,
Zhi-Xun Shen,
Amir H. Safavi-Naeini,
Jelena Vučković
Abstract:
On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a…
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On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a material, diamond lacks many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically-poled quasi-phase matching. Here, we present highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90\% transmission efficiency between the diamond nanobeam and TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we determine a $10$-fold increase in photon counts channeled into TFLN waveguides versus that into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.
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Submitted 27 June, 2023;
originally announced June 2023.
