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Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Authors:
Ka Ming Law,
Arashdeep S. Thind,
Mihir Pendharkar,
Sahil J. Patel,
Joshua J. Phillips,
Chris J. Palmstrom,
Jaume Gazquez,
Albina Borisevich,
Rohan Mishra,
Adam J. Hauser
Abstract:
We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region: (1) is 1-2 nm wide, (2) occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and…
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We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region: (1) is 1-2 nm wide, (2) occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and (3) displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 (less Mn) film. We posit that growth energetics favor Mn diffusion to the interface even when there is no significant Ga interdiffusion into the epitaxial film. Element-specific X-ray magnetic circular dichroism (XMCD) measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the Co2FexMn1-xSi compositional range. The values lie between reported values for pure bulk and nanostructured Co, Fe, and Mn materials, corroborating the non-uniform, layered nature of the material on the nanoscale. Finally, SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition. The results inform a need for care and increased scrutiny when forming Mn-based magnetic thin films on III-V semiconductors like GaAs, particularly when films are on the order of 5 nm or when interface composition is critical to spin transport or other device applications.
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Submitted 24 December, 2023;
originally announced December 2023.
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Optimal Modulation Current for Gain-Switching Lasers
Authors:
Alex Borisevich
Abstract:
This paper formally shows that an exponentially rising current is optimal in terms of resistive ohmic loss for driving a semiconductor laser into the gain-switching mode. A metric to quantify the quality of laser operation that measures the similarity of a generated optical pulse to the delta function is proposed. Several circuit implementations to approximate exponentially rising current are deve…
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This paper formally shows that an exponentially rising current is optimal in terms of resistive ohmic loss for driving a semiconductor laser into the gain-switching mode. A metric to quantify the quality of laser operation that measures the similarity of a generated optical pulse to the delta function is proposed. Several circuit implementations to approximate exponentially rising current are developed, including using a driver circuit with BJT output stage, a network of RLC circuits, and a saturating inductor. An experimental comparison between a state-of-the-art sinewave resonant driver circuit and a directly driven laser is performed that favors the latest variant of the driver.
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Submitted 25 October, 2023; v1 submitted 23 October, 2023;
originally announced October 2023.
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Sub-10 nm Probing of Ferroelectricity in Heterogeneous Materials by Machine Learning Enabled Contact Kelvin Probe Force Microscopy
Authors:
Sebastian W. Schmitt,
Rama K. Vasudevan,
Maurice Seifert,
Albina Y. Borisevich,
Veeresh Deshpande,
Sergei V. Kalinin,
Catherine Dubourdieu
Abstract:
Reducing the dimensions of ferroelectric materials down to the nanoscale has strong implications on the ferroelectric polarization pattern and on the ability to switch the polarization. As the size of ferroelectric domains shrinks to nanometer scale, the heterogeneity of the polarization pattern becomes increasingly pronounced, enabling a large variety of possible polar textures in nanocrystalline…
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Reducing the dimensions of ferroelectric materials down to the nanoscale has strong implications on the ferroelectric polarization pattern and on the ability to switch the polarization. As the size of ferroelectric domains shrinks to nanometer scale, the heterogeneity of the polarization pattern becomes increasingly pronounced, enabling a large variety of possible polar textures in nanocrystalline and nanocomposite materials. Critical to the understanding of fundamental physics of such materials and hence their applications in electronic nanodevices, is the ability to investigate their ferroelectric polarization at the nanoscale in a non-destructive way. We show that contact Kelvin probe force microscopy (cKPFM) combined with a k-means response clustering algorithm enables to measure the ferroelectric response at a map** resolution of 8 nm. In a BaTiO3 thin film on silicon composed of tetragonal and hexagonal nanocrystals, we determine a nanoscale lateral distribution of discrete ferroelectric response clusters, fully consistent with the nanostructure determined by transmission electron microscopy. Moreover, we apply this data clustering method to the cKPFM responses measured at different temperatures, which allows us to follow the corresponding change in polarization pattern as the Curie temperature is approached and across the phase transition. This work opens up perspectives for map** complex ferroelectric polarization textures such as curled/swirled polar textures that can be stabilized in epitaxial heterostructures and more generally map** the polar domain distribution of any spatially-highly-heterogeneous ferroelectric materials.
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Submitted 17 March, 2023;
originally announced March 2023.
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Enhancement in Thermally Generated Spin Voltage at Pd/NiFe$_2$O$_4$ Interfaces by the Growth on Lattice-Matched Substrates
Authors:
A. Rastogi,
Z. Li,
A. V. Singh,
S. Regmi,
T. Peters,
P. Bougiatioti,
D. Carsten né Meier,
J. B. Mohammadi,
B. Khodadadi,
T. Mewes,
R. Mishra,
J. Gazquez,
A. Y. Borisevich,
Z. Galazka,
R. Uecker,
G. Reiss,
T. Kuschel,
A. Gupta
Abstract:
Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the…
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Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the thinner films ($\leq$ 330 nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert dam** parameter as determined from ferromagnetic resonance measurements. High resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain-relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films.
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Submitted 1 June, 2020;
originally announced June 2020.
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Feedforward Inversion Control of DC/DC Dual-Bridge Series Resonant Converter in Buck and Boost Modes
Authors:
Alex Borisevich,
Filipp Gleyzer,
Valeria Gavrilenko
Abstract:
In the paper, a nonlinear inversion technique for the steady-state model of the active dual-bridge series resonant converter is presented. The obtained control strategy allows cycle averaged output current regulation and performs waveform alignment for the controllable achievement of ZVS and synchronous rectification. The control is valid both for voltage buck and boost operating modes, as well as…
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In the paper, a nonlinear inversion technique for the steady-state model of the active dual-bridge series resonant converter is presented. The obtained control strategy allows cycle averaged output current regulation and performs waveform alignment for the controllable achievement of ZVS and synchronous rectification. The control is valid both for voltage buck and boost operating modes, as well as for low-power operation at a fixed frequency. Robustness of the control is studied by simulations with external linear control loops.
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Submitted 9 February, 2021; v1 submitted 5 January, 2020;
originally announced January 2020.
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Series Resonant Matrix Converter Topology for EV DC Fast Charging
Authors:
Alex Borisevich
Abstract:
In this paper, we presented a matrix converter with a high-frequency DC link for EV DC fast charging applications. Introducing this topology allows eliminating electrolytic capacitors in DC link of the converter, which potentially increases the reliability and power density of the system. The converter uses bidirectionally blocking three-phase rectifier to generate a high-frequency square wave vol…
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In this paper, we presented a matrix converter with a high-frequency DC link for EV DC fast charging applications. Introducing this topology allows eliminating electrolytic capacitors in DC link of the converter, which potentially increases the reliability and power density of the system. The converter uses bidirectionally blocking three-phase rectifier to generate a high-frequency square wave voltage for the series resonant LC DC/DC converter, eliminating one H-bridge in front of the resonant tank. Principles of high-frequency and low-frequency modulations are described. A low voltage prototype has been built and tested which demonstrated ZVS soft switching of all the transistors in the converter. Peak efficiency estimated as 98.0 % for state-of-the-art switches.
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Submitted 31 December, 2019;
originally announced December 2019.
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Exascale Deep Learning for Scientific Inverse Problems
Authors:
Nouamane Laanait,
Joshua Romero,
Junqi Yin,
M. Todd Young,
Sean Treichler,
Vitalii Starchenko,
Albina Borisevich,
Alex Sergeev,
Michael Matheson
Abstract:
We introduce novel communication strategies in synchronous distributed Deep Learning consisting of decentralized gradient reduction orchestration and computational graph-aware grou** of gradient tensors. These new techniques produce an optimal overlap between computation and communication and result in near-linear scaling (0.93) of distributed training up to 27,600 NVIDIA V100 GPUs on the Summit…
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We introduce novel communication strategies in synchronous distributed Deep Learning consisting of decentralized gradient reduction orchestration and computational graph-aware grou** of gradient tensors. These new techniques produce an optimal overlap between computation and communication and result in near-linear scaling (0.93) of distributed training up to 27,600 NVIDIA V100 GPUs on the Summit Supercomputer. We demonstrate our gradient reduction techniques in the context of training a Fully Convolutional Neural Network to approximate the solution of a longstanding scientific inverse problem in materials imaging. The efficient distributed training on a dataset size of 0.5 PB, produces a model capable of an atomically-accurate reconstruction of materials, and in the process reaching a peak performance of 2.15(4) EFLOPS$_{16}$.
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Submitted 24 September, 2019;
originally announced September 2019.
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Reconstruction of 3-D Atomic Distortions from Electron Microscopy with Deep Learning
Authors:
Nouamane Laanait,
Qian He,
Albina Y. Borisevich
Abstract:
Deep learning has demonstrated superb efficacy in processing imaging data, yet its suitability in solving challenging inverse problems in scientific imaging has not been fully explored. Of immense interest is the determination of local material properties from atomically-resolved imaging, such as electron microscopy, where such information is encoded in subtle and complex data signatures, and whos…
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Deep learning has demonstrated superb efficacy in processing imaging data, yet its suitability in solving challenging inverse problems in scientific imaging has not been fully explored. Of immense interest is the determination of local material properties from atomically-resolved imaging, such as electron microscopy, where such information is encoded in subtle and complex data signatures, and whose recovery and interpretation necessitate intensive numerical simulations subject to the requirement of near-perfect knowledge of the experimental setup. We demonstrate that an end-to-end deep learning model can successfully recover 3-dimensional atomic distortions of a variety of oxide perovskite materials from a single 2-dimensional experimental scanning transmission electron (STEM) micrograph, in the process resolving a longstanding question in the recovery of 3-D atomic distortions from STEM experiments. Our results indicate that deep learning is a promising approach to efficiently address unsolved inverse problems in scientific imaging and to underpin novel material investigations at atomic resolution.
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Submitted 18 February, 2019;
originally announced February 2019.
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Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback
Authors:
Stephen Jesse,
Bethany M. Hudak,
Eva Zarkadoula,
Jiaming Song,
Artem Maksov,
Miguel Fuentes-Cabrera,
Panchapakesan Ganesh,
Ivan Kravchenko,
Paul C. Snijders,
Andrew R. Lupini,
Albina Borisevich,
Sergei V. Kalinin
Abstract:
Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's Law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as t…
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Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's Law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant-front motion. These phenomena are visualized in real time with atomic resolution. We further implement active feedback control based on real-time image analytics to control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.
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Submitted 15 November, 2017;
originally announced November 2017.
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Evaluation of microstructure and mechanical property variations in AlxCoCrFeNi high entropy alloys produced by a high-throughput laser deposition method
Authors:
Mu Li,
Jaume Gazquez,
Albina Borisevich,
Rohan Mishra,
Katharine M. Flores
Abstract:
Twenty-one distinct AlxCoCrFeNi alloys were rapidly prepared by laser alloying an equiatomic CoCrFeNi substrate with Al powder to create an alloy library ranging x=0.15-1.32. Variations in crystal structure, microstructure and mechanical properties were investigated using X-ray diffraction, scanning electron microscopy, scanning transmission electron microscopy and nanoindentation. With increasing…
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Twenty-one distinct AlxCoCrFeNi alloys were rapidly prepared by laser alloying an equiatomic CoCrFeNi substrate with Al powder to create an alloy library ranging x=0.15-1.32. Variations in crystal structure, microstructure and mechanical properties were investigated using X-ray diffraction, scanning electron microscopy, scanning transmission electron microscopy and nanoindentation. With increasing Al content, the crystal structure transitioned from a disordered FCC to a mixture of disordered BCC and ordered B2 structures. While the onset of BCC/B2 formation was consistent with previously reported cast alloys, the FCC structure was observed at larger Al contents in the laser processed materials, resulting in a wider two phase regime. The FCC phase was primarily confined to the BCC/B2 grain boundaries at these high Al contents. The nanoindentation modulus and hardness of the FCC phase increased with Al content, while the properties of the BCC/B2 structure were insensitive to composition. The structure and mechanical properties of the laser-processed alloys were surprisingly consistent with reported results for cast alloys, demonstrating the feasibility of applying this high-throughput methodology to multicomponent alloy design.
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Submitted 24 October, 2017;
originally announced October 2017.
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Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δ
Authors:
Weiwei Li,
Qian He,
Le Wang,
Huizhong Zeng,
John Bowlan,
Langsheng Ling,
Dmitry A. Yarotski,
Wenrui Zhang,
Run Zhao,
Jiahong Dai,
Junxing Gu,
Shipeng Shen,
Haizhong Guo,
Li Pi,
Haiyan Wang,
Yongqiang Wang,
Ivan A. Velasco-Davalos,
Yangjiang Wu,
Zhijun Hu,
Bin Chen,
Run-Wei Li,
Young Sun,
Kuijuan **,
Yuheng Zhang,
Hou-Tong Chen
, et al. (5 additional authors not shown)
Abstract:
Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combin…
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Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-δ, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-δ.
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Submitted 28 August, 2017;
originally announced August 2017.
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Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier
Authors:
Matthias Althammer,
Amit Vikam Singh,
Sahar Keshavarz,
Mehmet Kenan Yurtisigi,
Rohan Mishra,
Albina Borisevich,
Patrick LeClair,
Arunava Gupta
Abstract:
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better la…
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We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched STiO$_3$ barrier, reaching values of up to 350% at T=5 K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T>200 K. Our results suggest that by employing a better lattice matched ferromagnetic electrode and thus reducing the structural defects in the strontium stannate barrier even larger TMR ratios might be possible in the future.
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Submitted 28 July, 2016;
originally announced July 2016.
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Selective control of oxygen sublattice stability by epitaxial strain in Ruddlesden-Popper films
Authors:
Tricia L. Meyer,
Lu Jiang,
Jaekwang Lee,
Mina Yoon,
John W. Freeland,
Jae Hyuck Jang,
Dilpuneet S. Aidhy,
Albina Borisevich,
Matthew Chisholm,
Takeshi Egami,
Ho Nyung Lee
Abstract:
Oxygen-defect control has long been considered an influential tuning knob for producing various property responses in complex oxide films. In addition to physical property changes, modification to the lattice structure, specifically lattice expansion, with increasing oxygen vacancy concentrations has been reported often and has become the convention for oxide materials. However, the current unders…
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Oxygen-defect control has long been considered an influential tuning knob for producing various property responses in complex oxide films. In addition to physical property changes, modification to the lattice structure, specifically lattice expansion, with increasing oxygen vacancy concentrations has been reported often and has become the convention for oxide materials. However, the current understanding of the lattice behavior in oxygen-deficient films becomes disputable when considering compounds containing different bonding environments or atomic layering. Moreover, tensile strain has recently been discovered to stabilize oxygen vacancies in epitaxial films, which further complicates the interpretation of lattice behavior resulting from their appearance. Here, we report on the selective strain control of oxygen vacancy formation and resulting lattice responses in the layered, Ruddlesden-Popper phases, La1.85Sr0.15CuO4. We found that a drastically reduced Gibbs free energy for oxygen vacancy formation near the typical growth temperature for tensile-strained epitaxial LSCO accounts for the large oxygen non-stoichiometry. Additionally, oxygen vacancies form preferentially in the equatorial position of the CuO2 plane, leading to a lattice contraction, rather than the expected expansion, observed with apical oxygen vacancies. Since oxygen stoichiometry plays a key role in determining the physical properties of many complex oxides, the strong strain coupling of oxygen nonstoichiometry and the unusual structural response reported here can provide new perspectives and understanding to the structure and property relationships of many other functional oxide materials.
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Submitted 27 August, 2015;
originally announced August 2015.
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HAADF-STEM Study of Mo/V Distributions in Mo-V-Te-Ta-O M1 Phases and Their Correlations with Surface Reactivity
Authors:
Jungwon Woo,
Albina Borisevich,
Qian He,
Vadim V. Guliants
Abstract:
The MoVTeTaO M1 phases were prepared by conventional hydrothermal (HT) and microwave-assisted HT synthesis methods (MW) employing two different Ta precursors, Ta ethoxide and a custom-made Ta oxalate complex. The profile intensity analysis of the HAADF-STEM image of M1 phases oriented along [hk0] directions from the surface to bulk region of HAADF-STEM images indicated that the chemical compositio…
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The MoVTeTaO M1 phases were prepared by conventional hydrothermal (HT) and microwave-assisted HT synthesis methods (MW) employing two different Ta precursors, Ta ethoxide and a custom-made Ta oxalate complex. The profile intensity analysis of the HAADF-STEM image of M1 phases oriented along [hk0] directions from the surface to bulk region of HAADF-STEM images indicated that the chemical composition of surface ab planes is very similar to their composition in the bulk. The HAADF-STEM image analysis showed that synthesis methods have a significant impact on the Mo/V distribution in the MoVTeTaO M1 phases and their reactivity in propane ammoxidation. Enhanced acrylonitrile (ACN) yield and 1st order irreversible reaction rate constants for propane consumption, normalized to the estimated surface ab plane areas, correlated with increased V content in the proposed catalytic center (S2-S4-S4-S7-S7). These observations lend further support to the idea that multiple VOx sites present in the surface ab planes may be responsible for the activity and selectivity of the M1 phase in propane ammoxidation.
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Submitted 8 May, 2015; v1 submitted 27 March, 2015;
originally announced March 2015.
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Energy Efficient Control of an Induction Machine under Load Torque Step Change
Authors:
Alex Borisevich,
Gernot Schullerus
Abstract:
Optimal control of magnetizing current for minimizing induction motor power losses during load torque step change was developed. Obtained strategy has feedback form and is exactly optimal of ideal speed controller performance and absence of saturation in motor. The impact of limited bandwidth of real speed controller is analyzed. For case of main induction saturation the sub-optimal optimal contro…
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Optimal control of magnetizing current for minimizing induction motor power losses during load torque step change was developed. Obtained strategy has feedback form and is exactly optimal of ideal speed controller performance and absence of saturation in motor. The impact of limited bandwidth of real speed controller is analyzed. For case of main induction saturation the sub-optimal optimal control is suggested. Relative accuracy of sub-optimality is studied. Hardware implementation of optimal strategy and experimentation conducted with induction motors under vector control.
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Submitted 18 April, 2014; v1 submitted 20 December, 2013;
originally announced December 2013.
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Defect thermodynamics and kinetics in thin strained ferroelectric films: the interplay of possible mechanisms
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
P. S. Sankara Rama Krishnan,
Alexander Tselev,
Evgheny Strelkov,
Albina Borisevich,
Olexander V. Varenyk,
Nicola V. Morozovsky,
Paul Munroe,
Sergei V. Kalinin,
Valanoor Nagarajan
Abstract:
We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poissons equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pr…
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We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poissons equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pressure) leads to the redistribution of both charged and electro-neutral defects in order to decrease the effective stress in the film. Internal electric fields, both built-in and depolarization ones, lead to a strong accumulation of screening space charges (charged defects and electrons) near the film interfaces. Importantly, the corresponding screening length is governed by the misfit strain and Vegard coefficient. Mobile defects dynamics, kinetics of polarization and electric current reversal are defined by the complex interplay between the donor, electron and phonon relaxation times, misfit strain, finite size effect and Vegard stresses.
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Submitted 13 November, 2013;
originally announced November 2013.
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Numerical homotopy continuation for control and online identification of nonlinear systems: the survey of selected results
Authors:
Alex Borisevich
Abstract:
The article gives an overview of the parameter numerical continuation methodology applied to setpoint control and parameter identification of nonlinear systems. The control problems for affine systems as well as general (nonaffine) nonlinear systems are considered. Online parameter identification is also presented in two versions: with linear and nonlinear nonconvex parameterization. Simulation re…
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The article gives an overview of the parameter numerical continuation methodology applied to setpoint control and parameter identification of nonlinear systems. The control problems for affine systems as well as general (nonaffine) nonlinear systems are considered. Online parameter identification is also presented in two versions: with linear and nonlinear nonconvex parameterization. Simulation results for illustrative examples are shown.
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Submitted 26 January, 2013;
originally announced January 2013.
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Universal emergence of spatially-modulated structures induced by flexo-antiferrodistortive coupling in multiferroics
Authors:
Eugene A. Eliseev,
Sergei V. Kalinin,
Yijia Gu,
Maya D. Glinchuk,
Victoria Khist,
Albina Borisevich,
Venkatraman Gopalan,
Long-Qing Chen,
Anna N. Morozovska
Abstract:
We proved the existence of a universal flexo-antiferrodistortive coupling as a necessary complement to the well-known flexoelectric coupling. The coupling is universal for all antiferrodistortive systems and can lead to the formation of incommensurate, spatially-modulated phases in multiferroics. Our analysis can provide a self-consistent mesoscopic explanation for a broad range of modulated domai…
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We proved the existence of a universal flexo-antiferrodistortive coupling as a necessary complement to the well-known flexoelectric coupling. The coupling is universal for all antiferrodistortive systems and can lead to the formation of incommensurate, spatially-modulated phases in multiferroics. Our analysis can provide a self-consistent mesoscopic explanation for a broad range of modulated domain structures observed experimentally in multiferroics.
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Submitted 11 November, 2013; v1 submitted 10 January, 2013;
originally announced January 2013.
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Conductivity of twin walls - surface junctions in ferroelastics: interplay of deformation potential, octahedral rotations, improper ferroelectricity and flexoelectric coupling
Authors:
Eugene A. Eliseev,
Anna N. Morozovska,
Albina Y. Borisevich,
Yijia Gu,
Long-Qing Chen,
Venkatraman Gopalan,
Sergei V. Kalinin
Abstract:
Electronic and structural phenomena at the twin domain wall-surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential mechanism, structural order parameter gradient, rotostriction and flexoelectric coupling is explored. Approximate analytical results show that inhomogeneous elasti…
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Electronic and structural phenomena at the twin domain wall-surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential mechanism, structural order parameter gradient, rotostriction and flexoelectric coupling is explored. Approximate analytical results show that inhomogeneous elastic strains, which exist in the vicinity of the twin walls - surface junctions due to the rotostriction coupling, decrease the local band gap via the deformation potential and flexoelectric coupling mechanisms. This is the direct mechanism of the twin walls static conductivity in ferroelastics and, by extension, in multiferroics and ferroelectrics. On the other hand, flexoelectric and rotostriction coupling leads to the appearance of the improper polarization and electric fields proportional to the structural order parameter gradient in the vicinity of the twin walls - surface junctions. The "flexo-roto" fields leading to the carrier accumulation are considered as indirect mechanism of the twin walls conductivity. Comparison of the direct and indirect mechanisms illustrates complex range of phenomena directly responsible for domain walls static conductivity in materials with multiple order parameters.
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Submitted 20 May, 2012; v1 submitted 30 April, 2012;
originally announced April 2012.
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Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films
Authors:
A. N. Morozovska,
E. A. Eliseev,
S. L. Bravina,
A. Y. Borisevich,
S. V. Kalinin
Abstract:
The influence of the flexoelectric and rotostriction coupling on the phase diagrams of ferroelastic-quantum paraelectric SrTiO3 films was studied using Landau-Ginzburg-Devonshire (LGD) theory. The phase diagrams in coordinates temperature - film thickness were calculated for different epitaxial misfit strains. Tensile misfit strains stimulate appearance of the spontaneous out-of-plane structural o…
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The influence of the flexoelectric and rotostriction coupling on the phase diagrams of ferroelastic-quantum paraelectric SrTiO3 films was studied using Landau-Ginzburg-Devonshire (LGD) theory. The phase diagrams in coordinates temperature - film thickness were calculated for different epitaxial misfit strains. Tensile misfit strains stimulate appearance of the spontaneous out-of-plane structural order parameter (displacement vector of an appropriate oxygen atom from its cubic position) in the structural phase. Compressive misfit strains stimulate appearance of the spontaneous in-plane structural order parameter. Gradients of the structural order parameter components, which inevitably exist in the vicinity of film surfaces due to the termination and symmetry breaking, induce improper polarization and pyroelectric response via the flexoelectric and rotostriction coupling mechanism. Flexoelectric and rotostriction coupling results in the roto-flexoelectric field that is antisymmetric inside the film, small in the central part of the film, where the gradients of the structural parameter are small, and maximal near the surfaces, where the gradients of the structural parameter are highest. The field induces improper polarization and pyroelectric response. Penetration depths of the improper phases (both polar and structural) can reach several nm from the film surfaces. An improper pyroelectric response of thin films is high enough to be registered with planar-type electrode configurations by conventional pyroelectric methods.
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Submitted 29 April, 2012;
originally announced April 2012.
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Switching strategy based on homotopy continuation for non-regular affine systems with application in induction motor control
Authors:
Alex Borisevich,
Gernot Schullerus
Abstract:
In the article the problem of output setpoint tracking for affine non-linear system is considered. Presented approach combines state feedback linearization and homotopy numerical continuation in subspaces of phase space where feedback linearization fails. The method of numerical parameter continuation for solving systems of nonlinear equations is generalized to control affine non-linear dynamical…
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In the article the problem of output setpoint tracking for affine non-linear system is considered. Presented approach combines state feedback linearization and homotopy numerical continuation in subspaces of phase space where feedback linearization fails. The method of numerical parameter continuation for solving systems of nonlinear equations is generalized to control affine non-linear dynamical systems. The illustrative example of control of MIMO system which is not static feedback linearizable is given. Application of proposed method demonstrated on the speed and rotor magnetic flux control in the three-phase asynchronous motor.
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Submitted 29 June, 2012; v1 submitted 27 March, 2012;
originally announced March 2012.
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Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies
Authors:
A. Y. Borisevich,
A. R. Lupini,
J. He,
E. A. Eliseev,
A. N. Morozovska,
G. S. Svechnikov,
P. Yu,
Y. H. Chu,
R. Ramesh,
S. T. Pantelides,
S. V. Kalinin,
S. J. Pennycook
Abstract:
Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at t…
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Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural map** can serve as a quantitative indicator of the presence of O vacancies at interfaces.
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Submitted 31 October, 2011;
originally announced November 2011.
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Watching Domains Grow: In-situ studies of polarization switching by combined Scanning Probe and Scanning Transmission Electron Microscopy
Authors:
Hyejung Chang,
Sergei V. Kalinin,
Seungyeul Yang,
Pu Yu,
Saswata Bhattacharya,
** P. Wu,
Nina Balke,
Stephen Jesse,
Long Q. Chen,
Ramamoorthy Ramesh,
Stephen J. Pennycook,
Albina Y. Borisevich
Abstract:
Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71^{\circ} domain walls are observed and compared with the results of phase-field modeling. In particular, a…
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Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71^{\circ} domain walls are observed and compared with the results of phase-field modeling. In particular, a preferential nucleation site and direction-dependent pinning of domain walls is observed due to slow kinetics of metastable switching in the sample without a bottom electrode. These in-situ spatially-resolved observations of a first-order bias-induced phase transition reveal the mesoscopic mechanisms underpinning functionality of a wide range of multiferroic materials.
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Submitted 26 April, 2011;
originally announced April 2011.
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Oxygen-Induced Surface Reconstruction of SrRuO3 and Its Effect on the BaTiO3 Interface
Authors:
Junsoo Shin,
Albina Y. Borisevich,
Vincent Meunier,
**g Zhou,
E. Ward Plummer,
Sergei V. Kalinin,
Arthur P. Baddorf
Abstract:
Atomically engineered oxide multilayers and superlattices display unique properties responsive to the electronic and atomic structures of the interfaces. We have followed the growth of ferroelectric BaTiO3 on SrRuO3 electrode with in situ atomic scale analysis of the surface structure at each stage. An oxygen-induced surface reconstruction of SrRuO3 leads to formation of SrO rows spaced at twice t…
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Atomically engineered oxide multilayers and superlattices display unique properties responsive to the electronic and atomic structures of the interfaces. We have followed the growth of ferroelectric BaTiO3 on SrRuO3 electrode with in situ atomic scale analysis of the surface structure at each stage. An oxygen-induced surface reconstruction of SrRuO3 leads to formation of SrO rows spaced at twice the bulk periodicity. This reconstruction modifies the structure of the first BaTiO3 layers grown subsequently, including intermixing observed with cross-section spectroscopy. These observations reveal that this common oxide interface is much more interesting than previously reported, and provide a paradigm for oxygen engineering of oxide structure at an interface.
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Submitted 22 July, 2010;
originally announced July 2010.
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Control of the structural and magnetic properties of perovskite oxide ultrathin films through the substrate symmetry effect
Authors:
Jun He,
Albina Borisevich,
Sergei V. Kalinin,
Stephen J. Pennycook,
Sokrates T. Pantelides
Abstract:
Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interf…
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Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interface properties driven by symmetry alone. Depending on the resistance of the octahedra to deformation, the interface layer can be as small as one unit cell or extend deep into the thin film.
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Submitted 29 June, 2010;
originally announced June 2010.
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Suppression of Octahedral Tilts and Associated Changes of Electronic Properties at Epitaxial Oxide Heterostructure Interfaces
Authors:
A. Borisevich,
H. J. Chang,
M. Huijben,
M. P. Oxley,
S. Okamoto,
M. K. Niranjan,
J. D. Burton,
E. Y. Tsymbal,
Y. H. Chu,
P. Yu,
R. Ramesh,
S. V. Kalinin,
S. J. Pennycook
Abstract:
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change o…
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Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
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Submitted 15 February, 2010;
originally announced February 2010.
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Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures
Authors:
A. N. Morozovska,
E. A. Eliseev,
S. V. Svechnikov,
V. Y. Shur,
A. Y. Borisevich,
P. Maksymovych,
S. V. Kalinin
Abstract:
Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored.…
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Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.
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Submitted 31 December, 2009;
originally announced January 2010.
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Recent Developments in Electromechanical Probing on the Nanoscale: Vector and Spectroscopic Imaging, Resolution, and Molecular Orientation Map**
Authors:
Sergei V. Kalinin,
S. Jesse,
A. Y. Borisevich,
H. N. Lee,
B. J. Rodriguez,
J. Hanson,
A. Gruverman,
E. Karapetian,
M. Kachanov
Abstract:
Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography. Understanding the local functionality of inorganic ferroelectrics including crystallographic orientation, piezoresponse, elasticity, and mechanisms for polarizati…
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Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography. Understanding the local functionality of inorganic ferroelectrics including crystallographic orientation, piezoresponse, elasticity, and mechanisms for polarization switching, requires probing material structure and properties on the level of a single ferroelectric grain or domain. Here, I present recent studies on electromechanical, mechanical, and spectroscopic characterization of ferroelectric materials by Scanning Probe Microscopy. Three-dimensional electromechanical imaging, referred to as Vector Piezoresponse Force Microscopy, is presented. Nanoelectromechanics of PFM, including the structure of coupled electroelastic fields and tip-surface contact mechanics, is analyzed. This establishes a complete continuum mechanics description of the PFM and Atomic Force Acoustic Microscopy imaging mechanisms. Mechanism for local polarization switching is analyzed. The hysteresis loop shape is shown to be determined by the formation of the transient domain below the tip, the size of which increases with the tip bias. Spectroscopic imaging that allows relevant characteristics of switching process, such as imprint bias, pinning strength, remanent and saturation response, is introduced. Finally, resolution in PFM and vector PFM imaging of local crystallographic and molecular orientation and disorder is introduced.
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Submitted 14 November, 2005;
originally announced November 2005.
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Dopants adsorbed as single atoms prevent degradation of catalysts
Authors:
Sanwu Wang,
Albina Y. Borisevich,
Sergey N. Rashkeev,
Michael V. Glazoff,
Karl Sohlberg,
Stephen J. Pennycook,
Sokrates T. Pantelides
Abstract:
The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous g…
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The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous gamma-Al2O3, a widely used catalyst and catalytic support, transforms to non-porous alpha-Al2O3 at ~1,100C. Do** with La raises the transformation temperature to ~1,250C, but it has not been possible to establish if La atoms enter the bulk, adsorb on surfaces as single atoms or clusters, or form surface compounds. Here, we use direct imaging by aberration-corrected Z-contrast scanning transmission electron microscopy coupled with extended X-ray absorption fine structure and first-principles calculations to demonstrate that, contrary to expectations, stabilization is achieved by isolated La atoms adsorbed on the surface. Strong binding and mutual repulsion of La atoms effectively pin the surface and inhibit both sintering and the transformation to alpha-Al2O3. The results provide the first guidelines for the choice of dopants to prevent thermal degradation of catalysts and other porous materials.
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Submitted 10 July, 2004;
originally announced July 2004.
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Spectroscopic imaging of single atoms within a bulk solid
Authors:
M. Varela,
S. D. Findlay,
A. R. Lupini,
H. M. Christen,
A. Y. Borisevich,
N. Dellby,
O. L. Krivanek,
P. D. Nellist,
M. P. Oxley,
L. J. Allen,
S. J. Pennycook,
.
Abstract:
The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information…
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The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information is spatially confined around the scattering atom. Furthermore we show how the depth of the atom within the crystal may be estimated.
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Submitted 28 January, 2004; v1 submitted 9 January, 2004;
originally announced January 2004.
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On the Radiation Damage of BTeV EMCAL Detector Unit
Authors:
A. Borisevich,
V. Dormenev,
G. Drobychev,
A. Fyodorov,
M. Korzhik,
Y. Kubota,
A. Lobko,
A. Lopatik,
O. Missevitch,
V. Moroz
Abstract:
Hamamatsu photomultiplier tubes (PMT) and various PMT window materials were exposed to gamma irradiation. Tests were performed with absorbed doses of 1 krad and 120 krad. Initial recommendations on PMT types to use in the BTeV electromagnetic calorimeter are stated.
Hamamatsu photomultiplier tubes (PMT) and various PMT window materials were exposed to gamma irradiation. Tests were performed with absorbed doses of 1 krad and 120 krad. Initial recommendations on PMT types to use in the BTeV electromagnetic calorimeter are stated.
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Submitted 11 April, 2003; v1 submitted 13 December, 2002;
originally announced December 2002.
