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Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation
Authors:
Giovanni Masciocchi,
Johannes Wilhelmus van der Jagt,
Maria-Andromachi Syskaki,
Jürgen Langer,
Gerhard Jakob,
Jeffrey McCord,
Benjamin Borie,
Andreas Kehlberger,
Dafine Ravelosona,
Mathias Kläui
Abstract:
Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softnes…
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Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softness and magnetostriction in a 30 nm Permalloy film after He$^+$ irradiation. Compared to the as-deposited state, the irradiation treatment reduces the induced anisotropy by a factor ten and the hard axis coercivity by a factor five. In addition, the effective magnetostriction of the film is significantly reduced by a factor ten - below $1\times10^{-7}$ - after irradiation. All the above mentioned effects can be attributed to the isotropic crystallite growth of the Ni-Fe alloy and to the intermixing at the magnetic layer interfaces under light ion irradiation. We support our findings with X-ray diffraction analysis of the textured Ni$_{81}$Fe$_{19}$ alloy. Importantly, the sizable magnetoresistance is preserved after the irradiation. Our results show that compared to traditional annealing methods, the use of He$^+$ irradiation leads to significant improvements in the magnetic softness and reduces strain cross sensitivity in Permalloy films required for 3D positioning and compass applications. These improvements, in combination with the local nature of the irradiation process make our finding valuable for the optimization of monolithic integrated sensors, where classic annealing methods cannot be applied due to complex interplay within the components in the device.
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Submitted 2 March, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Control of magnetoelastic coupling in Ni/Fe multilayers using He$^+$ ion irradiation
Authors:
Giovanni Masciocchi,
Johannes Wilhelmus van der Jagt,
Maria-Andromachi Syskaki,
Alessio Lamperti,
Niklas Wolff,
Andriy Lotnyk,
Jürgen Langer,
Lorenz Kienle,
Gerhard Jakob,
Benjamin Borie,
Andreas Kehlberger,
Dafine Ravelosona,
Mathias Kläui
Abstract:
This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Addition…
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This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Additionally, the critical fluence at which the absolute value of the magnetostriction is dramatically reduced is identified. Therefore insensitivity to strain of the magnetic stack is nearly reached, as required for many applications. All the above mentioned effects are attributed to the combination of the negative saturation magnetostriction of sputtered Ni, Fe layers and the positive magnetostriction of the Ni$_{x}$Fe$_{1-x}$ alloy at the intermixed interfaces, whose contribution is gradually increased with irradiation. Importantly the irradiation does not alter the layers polycrystalline structure, confirming that post-growth He$^+$ ion irradiation is an excellent tool to tune the magneto-elastic properties of magnetic samples. A new class of spintronic devices can be envisioned with a material treatment able to arbitrarily change the magnetostriction with ion-induced "magnetic patterning".
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Submitted 6 July, 2022;
originally announced July 2022.
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Geometrically enhanced closed-loop multi-turn sensor devices that enable reliable magnetic domain wall motion
Authors:
Benjamin Borie,
Jürgen Wahrhusen,
Hubert Grimm,
Mathias Kläui
Abstract:
We experimentally realize a sophisticated structure geometry for reliable magnetic domain wall-based multi-turn-counting sensor devices, which we term closed-loop devices that can sense millions of turns. The concept relies on the reliable propagation of domain walls through a cross-shaped intersection of magnetic conduits, to allow the intertwining of loops of the sensor device. As a key step to…
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We experimentally realize a sophisticated structure geometry for reliable magnetic domain wall-based multi-turn-counting sensor devices, which we term closed-loop devices that can sense millions of turns. The concept relies on the reliable propagation of domain walls through a cross-shaped intersection of magnetic conduits, to allow the intertwining of loops of the sensor device. As a key step to reach the necessary reliability of the operation, we develop a combination of tilted wires called the syphon structure at the entrances of the cross. We measure the control and reliability of the domain wall propagation individually for cross-shaped intersections, the syphon geometries and finally combinations of the two for various field configurations (strengths and angles). The various measured syphon geometries yield a dependence of the domain wall propagation on the shape that we explain by the effectively acting transverse and longitudinal external applied magnetic fields. The combination of both elements yields a behaviour that cannot be explained by a simple superposition of the individual different maximum field operation values. We identify as an additional process the nucleation of domain walls in the cross, which then allows us to fully gauge the operational parameters. Finally, we demonstrate that by tuning the central dimensions of the cross and choosing the optimum angle for the syphon structure reliable sensor operation is achieved, which paves the way for disruptive multi-turn sensor devices.
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Submitted 9 December, 2017;
originally announced December 2017.
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Reliable magnetic domain wall propagation in cross structures for advanced multi-turn sensor devices
Authors:
B. Borie,
M. Voto,
L. Lopez-Diaz,
H. Grimm,
M. Diegel,
M. Kläui,
R. Mattheis
Abstract:
We develop and analyze an advanced concept for domain wall based sensing of rotations. Moving domain walls in n closed loops with n-1 intersecting convolutions by rotating fields, we can sense n rotations. By combining loops with coprime numbers of rotations, we create a sensor system allowing for the total counting of millions of turns of a rotating applied magnetic field. We analyze the operatio…
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We develop and analyze an advanced concept for domain wall based sensing of rotations. Moving domain walls in n closed loops with n-1 intersecting convolutions by rotating fields, we can sense n rotations. By combining loops with coprime numbers of rotations, we create a sensor system allowing for the total counting of millions of turns of a rotating applied magnetic field. We analyze the operation of the sensor and identify the intersecting cross structures as the critical component for reliable operation. In particular depending on the orientation of the applied field angle with the magnetization in the branches of the cross, a domain wall is found to propagate in an unwanted direction yielding failures and counting errors in the device. To overcome this limiting factor, we introduce a specially designed syphon structure to achieve the controlled pinning of the domain wall before the cross and depinning and propagation only for a selected range of applied field angles. By adjusting the syphon and the cross geometry, we find that the optimized combination of both structures prevents failures in the full sensor structure yielding robust operation. Our modeling results show that the optimized element geometry allows for the realization of the sensor with cross-shaped intersections and operation that is tolerant to inaccuracies of the fabrication.
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Submitted 15 August, 2017;
originally announced August 2017.
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Geometrical dependence of domain wall propagation and nucleation fields in magnetic domain wall sensor devices
Authors:
B. Borie,
A. Kehlberger,
J. Wahrhusen,
H. Grimm,
M. Kläui
Abstract:
We study the key domain wall properties in segmented nanowires loop-based structures used in domain wall based sensors. The two reasons for device failure, namely the distribution of domain wall propagation field (depinning) and the nucleation field are determined with Magneto-Optical Kerr Effect (MOKE) and Giant Magnetoresistance (GMR) measurements for thousands of elements to obtain significant…
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We study the key domain wall properties in segmented nanowires loop-based structures used in domain wall based sensors. The two reasons for device failure, namely the distribution of domain wall propagation field (depinning) and the nucleation field are determined with Magneto-Optical Kerr Effect (MOKE) and Giant Magnetoresistance (GMR) measurements for thousands of elements to obtain significant statistics. Single layers of Ni$_{81}$Fe$_{19}$, a complete GMR stack with Co$_{90}$Fe$_{10}$/Ni$_{81}$Fe$_{19}$ as a free layer and a single layer of Co$_{90}$Fe$_{10}$ are deposited and industrially patterned to determine the influence of the shape anisotropy, the magnetocrystalline anisotropy and the fabrication processes. We show that the propagation field is little influenced by the geometry but significantly by material parameters. The domain wall nucleation fields can be described by a typical Stoner-Wohlfarth model related to the measured geometrical parameters of the wires and fitted by considering the process parameters. The GMR effect is subsequently measured in a substantial number of devices (3000), in order to accurately gauge the variation between devices. This reveals a corrected upper limit to the nucleation fields of the sensors that can be exploited for fast characterization of working elements.
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Submitted 15 August, 2017; v1 submitted 24 April, 2017;
originally announced April 2017.
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Angular dependence of the domain wall depinning field in the sensors with segmented corners
Authors:
Daniel Heinze,
Benjamin Borie,
Jürgen Wahrhusen,
Hubert Grimm,
Mathias Kläui
Abstract:
Rotating domain wall based sensors that have recently been developed are based on a segmented loo** geometry. In order to determine the crucial pinning of domain walls in this special geometry, we investigate the depinning under different angles of an applied magnetic field and obtain the angular dependence of the depinning field of the domain walls. Due to the geometry, the depinning field not…
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Rotating domain wall based sensors that have recently been developed are based on a segmented loo** geometry. In order to determine the crucial pinning of domain walls in this special geometry, we investigate the depinning under different angles of an applied magnetic field and obtain the angular dependence of the depinning field of the domain walls. Due to the geometry, the depinning field not only exhibits a 180$^\circ$-periodicity but a more complex dependence on the angle. The depinning field depends on two different angles associated with the initial state and the segmented geometry of the corner. We find that depending on the angle of the applied field two different switching processes occur and we can reproduce the angular dependence using a simple model calculation.
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Submitted 30 August, 2016;
originally announced August 2016.
