What can the activation energy tell about the energetics at grain boundaries in polycrystalline organic films?
Authors:
Lisa S. Walter,
Michael Kühn,
Theresa Kammerbauer,
James W. Borchert,
R. Thomas Weitz
Abstract:
Charge-carrier transport at the semiconductor-gate dielectric interface in organic field-effect transistors is critically dependent on the degree of disorder in the typically semi-crystalline semiconductor layer. Charge trap** can occur at the interface as well as in the current-carrying semiconductor layer itself. A detailed and systematic understanding of the role of grain boundaries between c…
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Charge-carrier transport at the semiconductor-gate dielectric interface in organic field-effect transistors is critically dependent on the degree of disorder in the typically semi-crystalline semiconductor layer. Charge trap** can occur at the interface as well as in the current-carrying semiconductor layer itself. A detailed and systematic understanding of the role of grain boundaries between crystallites and how to avoid their potentially detrimental effects is still an important focus of research in the organic electronics community. A typical macroscopic measurement technique to extract information about the energetics of the grain boundaries is an activation energy measurement. Here, we compare detailed experiments on the energetic properties of monolayer thin films implemented in organic field-effect transistors, having controlled numbers of grain boundaries within the channel region to kinetic Monte-Carlo simulations of charge-carrier transport to elucidate the influence of grain boundaries on the extracted activation energies. Two important findings are: 1) whereas the energy at the grain boundary does not change with the number of grain boundaries in a thin film, both the measured and simulated activation energy increases with the number of grain boundaries. 2) In simulations where both energy barriers and valleys are present at the grain boundaries there is no systematic relation between the number of grain boundaries and extracted activation energies. We conclude, that a macroscopic measurement of the activation energy can serve as general quality indicator of the thin film, but does not allow microscopic conclusions about the energy landscape of the thin film.
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Submitted 1 August, 2023;
originally announced August 2023.
Critical Evaluation of Organic Thin-Film Transistor Models
Authors:
Markus Krammer,
James W. Borchert,
Andreas Petritz,
Esther Karner-Petritz,
Gerburg Schider,
Barbara Stadlober,
Hagen Klauk,
Karin Zojer
Abstract:
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. W…
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Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.
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Submitted 20 December, 2018;
originally announced December 2018.
