Showing 1–7 of 7 results for author: Bonnell, D A

Probing Spin-Charge Relation by Magnetoconductance in One-Dimensional Polymer Nanofibers

Authors: A. Choi, K. H. Kim, S. J. Hong, M. Goh, K. Akagi, R. B. Kaner, N. N. Kirova, S. A. Brazovskii, A. T. Johnson, D. A. Bonnell, E. J. Mele, Y. W. Park

Abstract: Polymer nanofibers are one-dimensional organic hydrocarbon systems containing conducting polymers where the non-linear local excitations such as solitons, polarons and bipolarons formed by the electron-phonon interaction were predicted. Magnetoconductance (MC) can simultaneously probe both the spin and charge of these mobile species and identify the effects of electron-electron interactions on the… ▽ More Polymer nanofibers are one-dimensional organic hydrocarbon systems containing conducting polymers where the non-linear local excitations such as solitons, polarons and bipolarons formed by the electron-phonon interaction were predicted. Magnetoconductance (MC) can simultaneously probe both the spin and charge of these mobile species and identify the effects of electron-electron interactions on these nonlinear excitations. Here we report our observations of a qualitatively different MC in polyacetylene (PA) and in polyaniline (PANI) and polythiophene (PT) nanofibers. In PA the MC is essentially zero, but it is present in PANI and PT. The universal scaling behavior and the zero (finite) MC in PA (PANI and PT) nanofibers provide evidence of Coulomb interactions between spinless charged solitons (interacting polarons which carry both spin and charge). △ Less

Submitted 17 October, 2012; originally announced October 2012.

Journal ref: Physical Review B, 86, 155423 (2012)

High frequency Scanning Gate Microscopy and local memory effect of carbon nanotube transistors

Authors: Cristian Staii, Rui Shao, Dawn A. Bonnell, Alan T. Johnson Jr

Abstract: We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to image changes in the impedance of swCN-FET circuits induced by the SGM-tip gate. In contrast to earlier reports, the results of both experiments are consistent… ▽ More We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to image changes in the impedance of swCN-FET circuits induced by the SGM-tip gate. In contrast to earlier reports, the results of both experiments are consistent with a simple RC parallel circuit model of the swCN-FET, with a time constant of 0.3 ms. We also use the SGM tip to show the local nature of the memory effect normally observed in swCN-FETs, implying that nanotube-based memory cells can be miniaturized to dimensions of the order of tens of nm. △ Less

Submitted 22 April, 2005; v1 submitted 21 April, 2005; originally announced April 2005.

Comments: 7 pages, 3 figures, to appear in Nano Letters

Controlled Fabrication of Nanogaps in Ambient Environment for Molecular Electronics

Authors: D. R. Strachan, D. E. Smith, D. E. Johnston, T. -H. Park, M. J. Therien, D. A. Bonnell, A. T. Johnson

Abstract: We have developed a controlled and highly reproducible method of making nanometer-spaced electrodes using electromigration in ambient lab conditions. This advance will make feasible single molecule measurements of macromolecules with tertiary and quaternary structures that do not survive the liquid-helium temperatures at which electromigration is typically performed. A second advance is that it… ▽ More We have developed a controlled and highly reproducible method of making nanometer-spaced electrodes using electromigration in ambient lab conditions. This advance will make feasible single molecule measurements of macromolecules with tertiary and quaternary structures that do not survive the liquid-helium temperatures at which electromigration is typically performed. A second advance is that it yields gaps of desired tunnelling resistance, as opposed to the random formation at liquid-helium temperatures. Nanogap formation occurs through three regimes: First it evolves through a bulk-neck regime where electromigration is triggered at constant temperature, then to a few-atom regime characterized by conductance quantum plateaus and jumps, and finally to a tunnelling regime across the nanogap once the conductance falls below the conductance quantum. △ Less

Submitted 5 April, 2005; originally announced April 2005.

Comments: 3 pages

Journal ref: Applied Physics Letters 86, 043109 (24 January 2005)

Electric scanning probe imaging and modification of ferroelectric surfaces

Authors: Sergei V. Kalinin, Dawn A. Bonnell

Abstract: Electric Scanning Probe Microscopies are used to characterize the surface behavior of ferroelectric materials. The effects of local charge density on the chemistry and physics of ferroelectric surfaces are investigated. The kinetics and thermodynamics parameters of adsorption are assessed by variable temperature Scanning Surface Potential Microscopy. Contrast formation mechanism of Piezoresponse… ▽ More Electric Scanning Probe Microscopies are used to characterize the surface behavior of ferroelectric materials. The effects of local charge density on the chemistry and physics of ferroelectric surfaces are investigated. The kinetics and thermodynamics parameters of adsorption are assessed by variable temperature Scanning Surface Potential Microscopy. Contrast formation mechanism of Piezoresponse Force Microscopy (PFM) is analyzed in detail, and the contributions of electroelastic constants of the material to response amplitude are determined. The effect of experimental conditions including indentation force and tip radius of curvature is elucidated using PFM Contrast Mechanism Maps. Simple quantitative criterion for non-local cantilever-surface interactions in PFM is developed. △ Less

Submitted 27 January, 2003; originally announced January 2003.

Comments: 43 pages, 21 figures, to be published in "Nanoscale characterization of ferroelectric materials", Ed. A. Gruverman and M. Alexe

Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Authors: Sergei V. Kalinin, Dawn A. Bonnell, Marcus Freitag, A. T. Johnson

Abstract: Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potentia… ▽ More Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed. △ Less

Submitted 21 October, 2002; originally announced October 2002.

Comments: 11 pages, 3 figures, to be published in Appl. Phys. Lett

Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

Authors: Marcus Freitag, Sergei V. Kalinin, Dawn A. Bonnell, A. T. Johnson

Abstract: The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as… ▽ More The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode. △ Less

Submitted 4 September, 2002; originally announced September 2002.

Comments: to appear in Physical Review Letters

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Authors: Sergei V. Kalinin, Marcus Freitag, A. T. Johnson, Dawn A. Bonnell

Abstract: Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonst… ▽ More Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies (SPM). Based on experimental observations, an analytical form for the differential tip-surface capacitance is obtained. △ Less

Submitted 24 June, 2002; originally announced June 2002.

Comments: 14 pages, 4 figures