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THz Higher-Order Topological Photonics in Ge-on-Si Heterostructures
Authors:
Ian Colombo,
Pietro Minazzi,
Emiliano Bonera,
Fabio Pezzoli,
Jacopo Pedrini
Abstract:
We design germanium-based higher-order topological cavities for terahertz applications by breaking the symmetry of a two-dimensional photonic crystal following the Su-Schrieffer-Heeger model. Calculations demonstrate the parity inversion of the electric field in differently deformed unit cells. The interface between domains of opposite topology presents edge and corner modes. The former are chiral…
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We design germanium-based higher-order topological cavities for terahertz applications by breaking the symmetry of a two-dimensional photonic crystal following the Su-Schrieffer-Heeger model. Calculations demonstrate the parity inversion of the electric field in differently deformed unit cells. The interface between domains of opposite topology presents edge and corner modes. The former are chiral, locking light propagation to its helicity. The latter prove that Ge-based structures can be used as high-order topological photonic crystals. These findings can accelerate the development of Si-photonic components working in a spectral range of high technological interest.
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Submitted 23 February, 2024;
originally announced February 2024.
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High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
Authors:
Sergio Bietti,
Francesco Basso Basset,
Artur Tuktamyshev,
Emiliano Bonera,
Alexey Fedorov,
Stefano Sanguinetti
Abstract:
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and enta…
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We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modelled.
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Submitted 7 August, 2019;
originally announced August 2019.
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Metal Droplet Effects on the Composition of Ternary Nitrides
Authors:
Mani Azadmand,
Stefano Vichi,
Sergio Bietti,
Daniel Chrastina,
Emiliano Bonera,
Maurizio Acciarri,
Alexey Fedorov,
Shiro Tsukamoto,
Richard Nötzel,
Stefano Sanguinetti
Abstract:
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that consi…
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We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that considers droplet effects on the incorporation of In and Ga adatoms into the crystal by taking into account the combined effects of the higher mobility of In, with respect to Ga, and to the vapor-liquid-solid growth that takes place under the droplet by direct im**ement of nitrogen. The proposed model is general and can be extended to describe the incorporation of adatoms during the growth of the material class of ternary compounds when droplets are present on the surface.
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Submitted 16 July, 2019;
originally announced July 2019.
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Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
Authors:
Francesco Basso Basset,
Sergio Bietti,
Artur Tuktamyshev,
Stefano Vichi,
Emiliano Bonera,
Stefano Sanguinetti
Abstract:
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient self-assembly approach to deliver strain-free GaAs quantum dots with size distribution below 15%, due to the control of the growth parameters during the prelimi…
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The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient self-assembly approach to deliver strain-free GaAs quantum dots with size distribution below 15%, due to the control of the growth parameters during the preliminary formation of the Ga droplets. This results in an ensemble photoluminescence linewidth of 19 meV at 14 K. The narrow emission band and the absence of a wetting layer promoting dot-dot coupling allow us to deconvolve the contribution of phonon broadening in the ensemble photoluminescence and study it in a wide temperature range.
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Submitted 24 March, 2019;
originally announced March 2019.
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Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
Authors:
M. Montanari,
M. Virgilio,
C. L. Manganelli,
P. Zaumseil,
M. H. Zoellner,
Y. Hou,
M. A. Schubert,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
E. Vitiello,
E. Bonera,
F. Pezzoli,
G. Capellini
Abstract:
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow u…
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In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow us to unambiguously disentangle the spectral features of the quantum wells from those originating in the virtual substrate and to evaluate the impact on the optical properties of key parameters, such as quantum confinement, layer compositions, excess carrier density, and lattice strain. This detailed understanding of the radiative recombination processes is of paramount importance for the development of Ge/GeSi-based optical devices.
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Submitted 21 November, 2018;
originally announced November 2018.
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Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials
Authors:
Mani Azadmand,
Luca Barabani,
Sergio Bietti,
Daniel Chrastina,
Emiliano Bonera,
Maurizio Acciarri,
Alexey Fedorov,
Shiro Tsukamoto,
Richard Nötzel,
Stefano Sanguinetti
Abstract:
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the m…
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We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the metal dose exceeds the critical amount required for the nucleation of droplets. We explain this phenomenon via a model that takes into account droplet effects on the incorporation of metal adatoms into the crystal. A relevant role is played by the vapor-liquid-solid growth mode that takes place under the droplets due to nitrogen molecules directly im**ing on the droplets.
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Submitted 1 December, 2017; v1 submitted 29 November, 2017;
originally announced November 2017.
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High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy
Authors:
Francesco Basso Basset,
Sergio Bietti,
Marcus Reindl,
Luca Esposito,
Alexey Fedorov,
Daniel Huber,
Armando Rastelli,
Emiliano Bonera,
Rinaldo Trotta,
Stefano Sanguinetti
Abstract:
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the quantum emitters. However, the fraction of the entanglement-ready quantum dots that can be fabricated with this method is still limited to around 5%, and matching…
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Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the quantum emitters. However, the fraction of the entanglement-ready quantum dots that can be fabricated with this method is still limited to around 5%, and matching the energy of the entangled photons to atomic transitions (a promising route towards quantum networking) remains an outstanding challenge.
Here, we overcome these obstacles by introducing a modified approach to droplet epitaxy on a high symmetry (111)A substrate, where the fundamental crystallization step is performed at a significantly higher temperature as compared to previous reports. Our method drastically improves the yield of entanglement-ready photon sources near the emission wavelength of interest, which can be as high as 95% due to the low values of fine structure splitting and radiative lifetime, together with the reduced exciton dephasing offered by the choice of GaAs/AlGaAs materials. The quantum dots are designed to emit in the operating spectral region of Rb-based slow-light media, providing a viable technology for quantum repeater stations.
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Submitted 10 October, 2018; v1 submitted 10 October, 2017;
originally announced October 2017.
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Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates
Authors:
F. Pezzoli,
A. Giorgioni,
K. Gallacher,
F. Isa,
P. Biagioni,
R. W. Millar,
E. Gatti,
E. Grilli,
E. Bonera,
G. Isella,
D. J. Paul,
Leo Miglio
Abstract:
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the…
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We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trap** of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.
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Submitted 29 March, 2016;
originally announced March 2016.
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Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates
Authors:
E. Vitiello,
M. Virgilio,
A. Giorgioni,
J. Frigerio,
E. Gatti,
S. De Cesari,
E. Bonera,
E. Grilli,
G. Isella,
F. Pezzoli
Abstract:
The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of do** and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a l…
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The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of do** and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a low temperature circular polarization degree of about 85% despite an off-resonance excitation of more than 300 meV. By photoluminescence (PL) measurements and tight binding calculations we show that this exceptionally high value is due to the peculiar energy dependence of the optically-induced electron spin population. Finally, our observation of the direct gap doublet clarifies that the light hole contribution, previously considered to be negligible, can dominate the room temperature PL even at low tensile strain values of about 0.2%.
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Submitted 29 October, 2015;
originally announced October 2015.
