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Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates
Authors:
Giordano Mattoni,
Pavlo Zubko,
Francesco Maccherozzi,
Alexander J. H. van der Torren,
Daan B. Boltje,
Marios Hadjimichael,
Nicola Manca,
Sara Catalano,
Marta Gibert,
Yanwei Liu,
Jan Aarts,
Jean-Marc Triscone,
Sarnjeet S. Dhesi,
Andrea D. Caviglia
Abstract:
Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscal…
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Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is an intrinsic local property, set by surface morphology and stable across multiple temperature cycles. Our data provides new insights into the MIT of heteroepitaxial nickelates and points to a rich, nanoscale phenomenology in this strongly correlated material.
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Submitted 16 November, 2016; v1 submitted 14 February, 2016;
originally announced February 2016.
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Sputter gas pressure effects on the properties of Sm-Co thin films deposited from a single target
Authors:
T. G. A. Verhagen,
D. B. Boltje,
J. M. van Ruitenbeek,
J. Aarts
Abstract:
We grow epitaxial Sm-Co thin films by sputter deposition from an alloy target with a nominal SmCo5 composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo5-like to a Sm2Co7-like phase. The composition, crystal structure, morphology and magnetic properties of these films have been determined using Ruth…
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We grow epitaxial Sm-Co thin films by sputter deposition from an alloy target with a nominal SmCo5 composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo5-like to a Sm2Co7-like phase. The composition, crystal structure, morphology and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction and magnetization measurements. We find that the various properties are sensitive to the sputter background pressure in different ways. In particular, the lattice parameter changes in a continuous way, the coercive fields vary continuously with a maximum value of 3.3 T, but the saturation magnetization peaks when the lattice parameter is close to that of Sm2Co7. Moreover, we find that the Sm content of the films is higher than expected from the expected stoichiometry.
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Submitted 8 October, 2012;
originally announced October 2012.
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Conductivity of LaAlO/SrTiO3 Interfaces made by Sputter Deposition
Authors:
I. M. Dildar,
D. B. Boltje,
M. H. S. Hesselberth,
Q. Xu,
H. W. Zandbergen,
S. Harkema
Abstract:
We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission Electron Microscopy shows atomically sharp and continuous interfaces while EELS measurements show some slight intermixing. The elemental ratio of La to Al measu…
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We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission Electron Microscopy shows atomically sharp and continuous interfaces while EELS measurements show some slight intermixing. The elemental ratio of La to Al measured by EDX is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by Pulsed Laser Deposition because of the different interplay between stoichiometry, mixing and oxygen vacancies.
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Submitted 21 November, 2011;
originally announced November 2011.
