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Polymer-based composites for engineering organic memristive devices
Authors:
Carlos David Prado-Socorro,
Silvia Giménez-Santamarina,
Lorenzo Mardegan,
Luis Escalera-Moreno,
Henk J. Bolink,
Salvador Cardona-Serra,
Eugenio Coronado
Abstract:
Memristive materials are related to neuromorphic applications as they can combine information processing with memory storage in a single computational element, just as biological neurons. Many of these bioinspired materials emulate the characteristics of memory and learning processes that happen in the brain. In this work, we report the memristive properties of a two-terminal (2-T) organic device…
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Memristive materials are related to neuromorphic applications as they can combine information processing with memory storage in a single computational element, just as biological neurons. Many of these bioinspired materials emulate the characteristics of memory and learning processes that happen in the brain. In this work, we report the memristive properties of a two-terminal (2-T) organic device based on ionic migration mediated by an ion-transport polymer. The material possesses unique memristive properties: it is reversibly switchable, shows tens of conductive states, presents Hebbian learning demonstrated by spiking time dependent plasticity (STDP), and behaves with both short- (STM) and long-term memory (LTM) in a single device. The origin and synergy of both learning phenomena were theoretically explained by means of the chemical interaction between ionic electrolytes and the ion-conductive mediator. Further discussion on the transport mechanism was included to explain the dynamic behaviour of these ionic devices under a variable electric field. We propose this polymer-based composite as an outstanding neuromorphic material for being tunable, cheap, flexible, easy to process, reproducible, and more biocompatible than their inorganic analogues.
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Submitted 22 October, 2021;
originally announced November 2021.
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Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells
Authors:
K. Tvingstedt,
L. Gil-Escrig,
C. Momblona,
P. Rieder,
D. Kiermasch,
M. Sessolo,
A. Baumann,
H. J. Bolink,
V. Dyakonov
Abstract:
Thin-film solar cells suffer from various types of recombination, of which leakage current usually dominates at lower voltages. Herein, we demonstrate first a three-order reduction of the shunt loss mechanism in planar methylammonium lead iodide perovskite solar cells by replacing the commonly used hole transport layer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with a bett…
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Thin-film solar cells suffer from various types of recombination, of which leakage current usually dominates at lower voltages. Herein, we demonstrate first a three-order reduction of the shunt loss mechanism in planar methylammonium lead iodide perovskite solar cells by replacing the commonly used hole transport layer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with a better hole-selective polyarylamine. As a result, these cells exhibit superior operation under reduced light conditions, which we demonstrate for the extreme case of moonlight irradiance, at which open-circuit voltages of 530 mV can still be obtained. By the shunt removal we also observe the VOC to drop to zero after as long as 2 h after the light has been switched off. Second, at higher illumination intensities the dominant losses in the PEDOT:PSS-based cell are ascribed to surface recombination and are also proven to be substantially minimized by instead employing the polyarylamine. We attribute the reduced shunt and surface recombination to the far better suited semiconductor character of the polyarylamine, compared to that of PEDOT:PSS, efficiently blocking electrons from recombining at this electrode.
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Submitted 18 February, 2019;
originally announced February 2019.
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Can we use time-resolved measurements to get Steady-State Transport data for Halide perovskites?
Authors:
Igal Levine,
Satyajit Gupta,
Achintya Bera,
Davide Ceratti,
Gary Hodes,
David Cahen,
Dengyang Guo,
Tom J. Savenije,
Jorge Avila,
Henk J. Bolink,
Oded Millo,
Doron Azulay,
Isaac Balberg
Abstract:
Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport properties. Howev-er, as yet no evaluation of their amenability and justification for the use of the results for the above-noted purposes has been reported. To check if we can learn from pulsed measurement results about s…
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Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport properties. Howev-er, as yet no evaluation of their amenability and justification for the use of the results for the above-noted purposes has been reported. To check if we can learn from pulsed measurement results about steady-state phototransport properties, we show here that, although pulsed measurements can be useful to extract information on the recombination kinetics of HaPs, great care should be taken. One issue is that no changes in the material are induced during or as a result of the excitation, and another one concerns in how far pulsed excitation-derived data can be used to find relevant steady-state pa-rameters. To answer the latter question, we revisited pulsed excitation, and propose a novel way to compare between pulsed and steady state measurements at different excitation intensities. We per-formed steady-state photoconductivity and ambipolar diffusion length measurements, as well as pulsed TR-MC and TR-PL measurements as function of excitation intensity on the same samples of dif-ferent MAPbI3 thin films, and find good quasi-quantitative agreement between the results, explaining them with a generalized single level recombination model that describes the basic physics of photo-transport of HaP absorbers. Moreover, we find the first experimental manifestation of the boundaries between several effective recombination regimes that exist in HaPs, by analyzing their phototransport behavior as a function of excitation intensity.
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Submitted 1 May, 2018;
originally announced May 2018.
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Persistent photovoltage in methylammonium lead iodide perovskite solar cells
Authors:
A. Baumann,
K. Tvingstedt,
M. C. Heiber,
S. Väth,
C. Momblona,
H. J. Bolink,
V. Dyakonov
Abstract:
Open circuit voltage decay measurements are performed on methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells to investigate the charge carrier recombination dynamics. The measurements are compared to the two reference polymer-fullerene bulk heterojunction solar cells based on P3HT:PC60BM and PTB7:PC70BM blends. In the perovskite devices, two very different time domains of the voltage de…
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Open circuit voltage decay measurements are performed on methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells to investigate the charge carrier recombination dynamics. The measurements are compared to the two reference polymer-fullerene bulk heterojunction solar cells based on P3HT:PC60BM and PTB7:PC70BM blends. In the perovskite devices, two very different time domains of the voltage decay are found, with a first drop on a short time scale that is similar to the organic solar cells. However, two major differences are also observed. 65-70% of the maximum photovoltage persists on much longer timescales, and the recombination dynamics are dependent on the illumination intensity.
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Submitted 3 July, 2014; v1 submitted 17 June, 2014;
originally announced June 2014.
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SiPMs coated with TPB : coating protocol and characterization for NEXT
Authors:
V. Álvarez,
J. Agramunt,
M. Ball,
M. Batallé,
J. Bayarri,
F. I. G. Borges,
H. Bolink,
H. Brine,
S. Cárcel,
J. M. Carmona,
J. Castel,
J. M. Catalá,
S. Cebrián,
A. Cervera,
D. Chan,
C. A. N. Conde,
T. Dafni,
T. H. V. T. Dias,
J. Díaz,
R. Esteve,
P. Evtoukhovitch,
J. Ferrando,
L. M. P. Fernandes,
P. Ferrario,
A. L. Ferreira
, et al. (69 additional authors not shown)
Abstract:
Silicon photomultipliers (SiPM) are the photon detectors chosen for the tracking readout in NEXT, a neutrinoless ββ decay experiment which uses a high pressure gaseous xenon time projection chamber (TPC). The reconstruction of event track and topology in this gaseous detector is a key handle for background rejection. Among the commercially available sensors that can be used for tracking, SiPMs off…
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Silicon photomultipliers (SiPM) are the photon detectors chosen for the tracking readout in NEXT, a neutrinoless ββ decay experiment which uses a high pressure gaseous xenon time projection chamber (TPC). The reconstruction of event track and topology in this gaseous detector is a key handle for background rejection. Among the commercially available sensors that can be used for tracking, SiPMs offer important advantages, mainly high gain, ruggedness, cost-effectiveness and radio-purity. Their main drawback, however, is their non sensitivity in the emission spectrum of the xenon scintillation (peak at 175 nm). This is overcome by coating these sensors with the organic wavelength shifter tetraphenyl butadienne (TPB). In this paper we describe the protocol developed for coating the SiPMs with TPB and the measurements performed for characterizing the coatings as well as the performance of the coated sensors in the UV-VUV range.
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Submitted 10 January, 2012;
originally announced January 2012.
