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Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge
Authors:
L. N. Karelina,
V. V. Bol'ginov,
Sh. A. Erkenov,
S. V. Egorov,
I. A. Golovchanskiy,
V. I. Chichkov,
A. ben Hamida,
V. V. Ryazanov
Abstract:
A noticeable magnetoresistive effect has been observed on ferromagnet/superconductor/ferromagnet (FSF) microbridges based on diluted ferromagnetic PdFe alloy containing as small as 1% magnetic atoms. Microstructuring of the FSF trilayers does not destroy the effect: the most pronounced curves were obtained on the smallest bridges of 6-8 um wide and 10-15 um long. Below the superconducting transiti…
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A noticeable magnetoresistive effect has been observed on ferromagnet/superconductor/ferromagnet (FSF) microbridges based on diluted ferromagnetic PdFe alloy containing as small as 1% magnetic atoms. Microstructuring of the FSF trilayers does not destroy the effect: the most pronounced curves were obtained on the smallest bridges of 6-8 um wide and 10-15 um long. Below the superconducting transition we are able to control the critical current of microbridges by switching between P and AP orientations of magnetizations of PdFe layers. The operation of FSF-bridge as a magnetic switch is demonstrated in several regimes providing significant voltage discrimination between digital states or remarkably low bit error rate.
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Submitted 1 September, 2020;
originally announced September 2020.
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Josephson magnetic rotary valve
Authors:
I. I. Soloviev,
N. V. Klenov,
S. V. Bakurskiy,
V. V. Bol'ginov,
V. V. Ryazanov,
M. Yu. Kupriyanov,
A. A. Golubov
Abstract:
We propose a control element for a Josephson spin valve. It is a complex Josephson device containing ferromagnetic (F) layer in the weak-link area consisting of two regions, representing $0$ and $π$ Josephson junctions, respectively. The valve's state is defined by mutual orientations of the F-layer magnetization vector and normal to the interface separating $0$ and $π$ sections of the device. We…
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We propose a control element for a Josephson spin valve. It is a complex Josephson device containing ferromagnetic (F) layer in the weak-link area consisting of two regions, representing $0$ and $π$ Josephson junctions, respectively. The valve's state is defined by mutual orientations of the F-layer magnetization vector and normal to the interface separating $0$ and $π$ sections of the device. We consider possible implementation of the control element by introduction of a thin normal metal layer in a part of the device area. By means of theoretical simulations we study properties of the valve's structure as well as its operation, revealing such advantages as simplicity of control, high characteristic frequency and good legibility of the basic states.
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Submitted 4 December, 2014;
originally announced December 2014.
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Theoretical Model of Superconducting Spintronic SIsFS Devices
Authors:
S. V. Bakurskiy,
N. V. Klenov,
I. I. Soloviev,
V. V. Bol'ginov,
V. V. Ryazanov,
I. V. Vernik,
O. A. Mukhanov,
M. Yu. Kupriyanov,
A. A. Golubov
Abstract:
Motivated by recent progress in development of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where 'S' is a bulk superconductor, 's' is a thin superconducting film, 'F' is a metallic ferromagnet and 'I' is an insulator. We calculate the Josephson current as a function of s and F layers thickness, tem…
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Motivated by recent progress in development of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where 'S' is a bulk superconductor, 's' is a thin superconducting film, 'F' is a metallic ferromagnet and 'I' is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current $I_{C}$ and a normal-state resistance $R_{N}$ in the $π$ state, comparable to that in SIS tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO${_x}$-Nb-Pd$_{0.99}$Fe$_{0.01}$-Nb junctions.
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Submitted 3 May, 2013;
originally announced May 2013.
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Magnetic Josephson Junctions with Superconducting Interlayer for Cryogenic Memory
Authors:
Igor V. Vernik,
Vitaly V. Bol'ginov,
Sergey V. Bakurskiy,
Alexander A. Golubov,
Mikhail Yu. Kupriyanov,
Valery V. Ryazanov,
Oleg A. Mukhanov
Abstract:
We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctio…
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We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctions fall into two distinct classes based on the thickness of S' layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SIS'FS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SIS'FS structure with thin superconducting S'-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibit IcRn product only ~30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SIS'FS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.
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Submitted 4 December, 2012;
originally announced December 2012.
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Ferromagnetic Josephson switching device with high characteristic voltage
Authors:
T. I. Larkin,
V. V. Bol'ginov,
V. S. Stolyarov,
V. V. Ryazanov,
I. V. Vernik,
S. K. Tolpygo,
O. A. Mukhanov
Abstract:
We develop a fast Magnetic Josephson Junction (MJJ) - a superconducting ferromagnetic device for a scalable high-density cryogenic memory compatible in speed and fabrication with energy-efficient Single Flux Quantum (SFQ) circuits. We present experimental results for Superconductor-Insulator-Ferromagnet-Superconductor (SIFS) MJJs with high characteristic voltage IcRn of >700 uV proving their appli…
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We develop a fast Magnetic Josephson Junction (MJJ) - a superconducting ferromagnetic device for a scalable high-density cryogenic memory compatible in speed and fabrication with energy-efficient Single Flux Quantum (SFQ) circuits. We present experimental results for Superconductor-Insulator-Ferromagnet-Superconductor (SIFS) MJJs with high characteristic voltage IcRn of >700 uV proving their applicability for superconducting circuits. By applying magnetic field pulses, the device can be switched between MJJ logic states. The MJJ IcRn product is only ~30% lower than that of conventional junction co-produced in the same process, allowing for integration of MJJ-based and SIS-based ultra-fast digital SFQ circuits operating at tens of gigahertz.
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Submitted 15 May, 2012;
originally announced May 2012.
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Implementation of superconductor-ferromagnet-superconductor pi-shifters in superconducting digital and quantum circuits
Authors:
A. K. Feofanov,
V. A. Oboznov,
V. V. Bol'ginov,
J. Lisenfeld,
S. Poletto,
V. V. Ryazanov,
A. N. Rossolenko,
M. Khabipov,
D. Balashov,
A. B. Zorin,
P. N. Dmitriev,
V. P. Koshelets,
A. V. Ustinov
Abstract:
The difference between the phases of superconducting order parameter plays in superconducting circuits the role similar to that played by the electrostatic potential difference required to drive a current in conventional circuits. This fundamental property can be altered by inserting in a superconducting circuit a particular type of weak link, the so-called Josephson $π$-junction having inverted c…
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The difference between the phases of superconducting order parameter plays in superconducting circuits the role similar to that played by the electrostatic potential difference required to drive a current in conventional circuits. This fundamental property can be altered by inserting in a superconducting circuit a particular type of weak link, the so-called Josephson $π$-junction having inverted current-phase relation and enabling a shift of the phase by $π$. We demonstrate the operation of three superconducting circuits -- two of them are classical and one quantum -- which all utilize such $π$-phase shifters realized using superconductor-ferromagnet-superconductor sandwich technology. The classical circuits are based on single-flux-quantum cells, which are shown to be scalable and compatible with conventional niobium-based superconducting electronics. The quantum circuit is a $π$-phase biased qubit, for which we observe coherent Rabi oscillations and compare the measured coherence time with that of conventional superconducting phase qubits.
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Submitted 10 May, 2010;
originally announced May 2010.
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Reentrant temperature dependence of critical current in superconductor - ferromagnet - superconductor junctions based on PdFe alloys
Authors:
V. V. Bol'ginov,
O. M. Vyaselev,
V. N. Shilov
Abstract:
The magnetic and transport properties of $Pd_{0.99}Fe_{0.01}$ thin films have been studied. We have found that the Curie temperature of the films is about 20 K and the magnetic properties strongly depend on temperature below $T_{Curie}$. We have also fabricated the set of superconductor-ferromagnet-superconductor josephson junctions $Nb-PdFe-Nb$. The temperature dependence of the junctions with…
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The magnetic and transport properties of $Pd_{0.99}Fe_{0.01}$ thin films have been studied. We have found that the Curie temperature of the films is about 20 K and the magnetic properties strongly depend on temperature below $T_{Curie}$. We have also fabricated the set of superconductor-ferromagnet-superconductor josephson junctions $Nb-PdFe-Nb$. The temperature dependence of the junctions with the ferromagnet layer thickness of about 36 nm shows the reentrant behaviour that is the evidence of the transition of the junction into the $π$-state.
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Submitted 16 September, 2007;
originally announced September 2007.
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Double-reversal thickness dependence of critical current in superconductor-ferromagnet-superconductor Josephson junctions
Authors:
V. A. Oboznov,
V. V. Bol'ginov,
A. K. Feofanov,
V. V. Ryazanov,
A. I. Buzdin
Abstract:
We report the first experimental observation of the two-node thickness dependence of the critical current in Josephson junctions with a ferromagnetic interlayer. Vanishings of the critical current correspond to transitions into pi-state and back into conventional 0-state. The experimental data allow to extract the superconducting order parameter oscillation period and the pair decay length in th…
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We report the first experimental observation of the two-node thickness dependence of the critical current in Josephson junctions with a ferromagnetic interlayer. Vanishings of the critical current correspond to transitions into pi-state and back into conventional 0-state. The experimental data allow to extract the superconducting order parameter oscillation period and the pair decay length in the ferromagnet. We develope a theoretical approach based on Usadel equations, which takes into account the spin-flip scattering. Results of numerical calculations are in good agreement with the experimental data.
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Submitted 24 August, 2005;
originally announced August 2005.
