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Anisotropic upper critical field of pristine and proton-irradiated single crystals of the magnetically ordered superconductor RbEuFe$_4$As$_4$
Authors:
M. P. Smylie,
A. E. Koshelev,
K. Willa,
R. Willa,
W. -K. Kwok,
J. -K. Bao,
D. Y. Chung,
M. G. Kanatzidis,
J. Singleton,
F. F. Balakirev,
H. Hebbeker,
P. Niraula,
E. Bokari,
A. Kayani,
U. Welp
Abstract:
We present a study of the upper critical field, H$_{c2}$, of pristine and proton-irradiated RbEuFe$_4$As$_4$ crystals in pulsed magnetic fields of up to 65 T. The data for H$_{c2}$ reveal pronounced downwards curvature, particularly for the in-plane field orientation, and a superconducting anisotropy that decreases with decreasing temperature. These features are indicative of Pauli paramagnetic li…
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We present a study of the upper critical field, H$_{c2}$, of pristine and proton-irradiated RbEuFe$_4$As$_4$ crystals in pulsed magnetic fields of up to 65 T. The data for H$_{c2}$ reveal pronounced downwards curvature, particularly for the in-plane field orientation, and a superconducting anisotropy that decreases with decreasing temperature. These features are indicative of Pauli paramagnetic limiting. For the interpretation of these data, we use a model of a clean single-band superconductor with an open Fermi surface in the shape of a warped cylinder, which includes strong paramagnetic limiting. Fits to the data reveal that the in-plane upper critical field is Pauli paramagnetic limited, while the out-of-plane upper critical field is orbitally limited and that the orbital and paramagnetic fields have opposite anisotropies. A consequence of this particular combination is the unusual inversion of the anisotropy, $H_{c2}^{ab} < H_{c2}^c$, of the irradiated sample at temperatures below 10 K. The fits also yield an in-plane Maki parameter, $α_M^{110} \approx$ 2.6, exceeding the critical value for the formation of the Fulde-Ferrell-Larkin-Ovchinnikov state. Nevertheless, the current measurements did not reveal direct evidence for the occurrence of this state.
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Submitted 16 April, 2019; v1 submitted 15 April, 2019;
originally announced April 2019.
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Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn$_{1-x}$In$_x$Te for x $\geq$ 0.10
Authors:
M. P. Smylie,
H. Claus,
W. -K. Kwok,
E. R. Louden,
M. R. Eskildsen,
A. S. Sefat,
R. D. Zhong,
J. Schneeloch,
G. D. Gu,
E. Bokari,
P. M. Niraula,
A. Kayani,
C. D. Dewhurst,
A. Snezhko,
U. Welp
Abstract:
The temperature dependence of the London penetration depth $Δλ(T)$ in the superconducting doped topological crystalline insulator Sn$_{1-x}$In$_x$Te was measured down to 450 mK for two different do** levels, x $\approx$ 0.45 (optimally doped) and x $\approx$ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavi…
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The temperature dependence of the London penetration depth $Δλ(T)$ in the superconducting doped topological crystalline insulator Sn$_{1-x}$In$_x$Te was measured down to 450 mK for two different do** levels, x $\approx$ 0.45 (optimally doped) and x $\approx$ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance $T_c$, indicating that ferroelectric interactions do not compete with superconductivity.
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Submitted 27 November, 2017;
originally announced November 2017.
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Robust odd-parity superconductivity in the doped topological insulator Nb$_x$Bi$_2$Se$_3$
Authors:
M. P. Smylie,
K. Willa,
H. Claus,
A. Snezhko,
I. Martin,
W. -K. Kwok,
Y. Qiu,
Y. S. Hor,
E. Bokari,
P. Niraula,
A. Kayani,
V. Mishra,
U. Welp
Abstract:
We present resistivity and magnetization measurements on proton-irradiated crystals demonstrating that the superconducting state in the doped topological superconductor Nb$_x$Bi$_2$Se$_3$ (x = 0.25) is surprisingly robust against disorder-induced electron scattering. The superconducting transition temperature $T_c$ decreases without indication of saturation with increasing defect concentration, an…
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We present resistivity and magnetization measurements on proton-irradiated crystals demonstrating that the superconducting state in the doped topological superconductor Nb$_x$Bi$_2$Se$_3$ (x = 0.25) is surprisingly robust against disorder-induced electron scattering. The superconducting transition temperature $T_c$ decreases without indication of saturation with increasing defect concentration, and the corresponding scattering rates far surpass expectations based on conventional theory. The low-temperature variation of the London penetration depth $Δλ(T)$ follows a power law ($Δλ(T)\sim T^2$) indicating the presence of symmetry-protected point nodes. Our results are consistent with the proposed robust nematic $E_u$ pairing state in this material.
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Submitted 4 April, 2017;
originally announced April 2017.
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Robustness of n-GaAs Carrier Spin Properties to 5 MeV Proton Irradiation
Authors:
Brennan C. Pursley,
Xinlin Song,
R. O. Torres-Isea,
Eiman A. Bokari,
Asghar Kayani,
Vanessa Sih
Abstract:
Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade electronic properties. Encoding information as spin polarizations offers an attractive alternative to electronic logic that should be robust to randomly polarized…
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Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade electronic properties. Encoding information as spin polarizations offers an attractive alternative to electronic logic that should be robust to randomly polarized transient radiation effects. As a preliminary step towards radiation-resistant spintronic devices, we measure the spin properties of n-GaAs as a function of radiation fluence using time-resolved Kerr rotation and photoluminescence spectroscopy. Our results show a modest to negligible change in the long-term electron spin properties up to a fluence of 1x10$^{14}$ (5 MeV protons)/cm$^2$, even as the luminescence decreases by two orders of magnitude.
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Submitted 3 February, 2015; v1 submitted 18 November, 2014;
originally announced November 2014.
