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Showing 1–2 of 2 results for author: Boishin, G I

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  1. The Structure of GaSb Digitally Doped with Mn

    Authors: G. I. Boishin, J. M. Sullivan, L. J. Whitman

    Abstract: Cross sectional scanning tunneling microscopy (XSTM) and density functional theory have been used to characterize the structure of GaSb digitally doped with Mn. The Mn dopants are found in both isolated substitutional form as well as in large clusters of zinc-blende MnSb commensurate with the surrounding GaSb matrix. Theoretical calculations predict that these two forms of Mn in the digitally do… ▽ More

    Submitted 11 March, 2005; v1 submitted 22 December, 2004; originally announced December 2004.

    Comments: 10 pages, 5 figures, submitted to PRB Brief Report, revised version

    Journal ref: Physical Review B, 71, 193307 (2005).

  2. Cross-sectional STM of Mn-doped GaAs: theory and experiment

    Authors: J. M. Sullivan, G. I. Boishin, L. J. Whitman, A. T. Hanbicki, B. T. Jonker, S. C. Erwin

    Abstract: We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on… ▽ More

    Submitted 8 July, 2003; originally announced July 2003.

    Comments: 7 journal pages, 6 figures, (preprint with high quality figures available at http://cst-www.nrl.navy.mil/~erwin/mngaasstm/)

    Journal ref: Phys. Rev. B 68, 235324 (2003) (6 pages)