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Coexistence of Antiferromagnetic Cubic and Ferromagnetic Tetragonal Polymorphs in Epitaxial CuMnSb
Authors:
Anna Ciechan,
Piotr Dluzewski,
Slawomir Kret,
Katarzyna Gas,
Lukas Scheffler,
Charles Gould,
Johannes Kleinlein,
Maciej Sawicki,
Laurens Molenkamp,
Piotr Boguslawski
Abstract:
High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its…
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High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its ferromagnetic tetragonal $β$ polymorph with the Curie temperature of about 100~K. First principles calculations provide a consistent interpretation of experiment, since (i) total energy of $β$--CuMnSb is higher than that of $α$--CuMnSb only by 0.12~eV per formula unit, which allows for epitaxial stabilization of this phase, (ii) the metallic character of $β$--CuMnSb favors the Ruderman-Kittel-Kasuya-Yoshida ferromagnetic coupling, and (iii) the calculated effective Curie-Weiss magnetic moment of Mn ions in both phases is about $5.5~μ_\mathrm{B}$, favorably close to the measured value. Calculated properties of all point native defects indicate that the most likely to occur are $\mathrm{Mn}_\mathrm{Cu}$ antisites. They affect magnetic properties of epilayers, but they cannot induce the ferromagnetic order in CuMnSb. Combined, the findings highlight a practical route towards fabrication of functional materials in which coexisting polymorphs provide complementing functionalities in one host.
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Submitted 29 May, 2024;
originally announced May 2024.
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Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the…
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Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the direction perpendicular to the surface, and they exhibit the rumpling effect, i.e., the vertical shifts of cations and anions differ. Second, the interlayer spacing of the first few monolayers at the surface oscillates. Our results are in good agreement with the previous X-ray experimental data and theoretical results where available. They also are consistent with the presence of two {110} mirror planes at the (001) surface of the rock salt. One the other hand, experiments preformed for the topological Pb$_{1-x}$Sn$_x$ Se alloy indicate breaking of the mirror symmetry due to a large 0.3 Å relative displacement of the cation and anion sublattices at the surface, which induces the opening of the gap of the Dirac cones. Our results for Pb$_{1-x}$Sn$_x$Se including the simulated STM images, are in contradiction with these findings, since surface reconstructions with broken symmetry are never the ground state configurations. The impact of the theoretically determined surface configurations and of the chemical disorder on the surface states is analyzed.
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Submitted 1 August, 2023; v1 submitted 6 June, 2023;
originally announced June 2023.
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Theory of the $sp-d$ coupling of transition metal impurities with free carriers in ZnO
Authors:
Anna Ciechan,
Piotr Bogusławski
Abstract:
The $s,p-d$ exchange coupling between the spins of band carriers and of transition metal (TM) dopants ranging from Ti to Cu in ZnO is studied within the density functional theory. The $+U$ corrections are included to reproduce the experimental ZnO band gap and the dopant levels. The $p-d$ coupling reveals unexpectedly complex features. In particular, (i) the $p-d$ coupling constants $N_0β$ vary ab…
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The $s,p-d$ exchange coupling between the spins of band carriers and of transition metal (TM) dopants ranging from Ti to Cu in ZnO is studied within the density functional theory. The $+U$ corrections are included to reproduce the experimental ZnO band gap and the dopant levels. The $p-d$ coupling reveals unexpectedly complex features. In particular, (i) the $p-d$ coupling constants $N_0β$ vary about 10 times when going from V to Cu, (ii) not only the value but also the sign of $N_0β$ depends on the charge state of the dopant, (iii) the $p-d$ coupling with the heavy holes and the light holes is not the same; in the case of Fe, Co and Ni, $N_0β$s for the two subbands can differ twice, and for Cu the opposite sign of the coupling is found for light and heavy holes. The main features of the $p-d$ coupling are determined by the $p-d$ hybridization between the $d$(TM) and $p$(O) orbitals. In contrast, the $s-d$ coupling constant $N_0α$ is almost the same for all TM ions, and does not depend on the charge state of the dopant. The TM-induced spin polarization of the $p$(O) orbitals contributes to the $s-d$ coupling, enhancing $N_0α$.
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Submitted 24 February, 2021;
originally announced February 2021.
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Band structure and topological phases of Pb$_{1-x-y}$Sn$_x$Mn$_y$Te by ab initio calculations
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin v…
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The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin variables. Our first principles calculations show that the presence of Mn shifts the TCI and the Weyl region towards higher Sn contents in Pb$_{1-x}$Sn$_x$Te. When the Mn spin polarization is finite, the spin perturbation, like the orbital part, induces changes in band energies comparable to the band gap, which widens the Weyl area. The effect opens a possibility of driving transitions between various topological phases of the system by magnetic field or by the spontaneous Mn magnetization. We also propose a new method to calculate topological indices for systems with a finite spin polarization defined based on the concept of the Chern number. These valid topological characteristics enable an identification of the three distinct topological phases of the Pb$_{1-x-y}$Sn$_x$Mn$_y$Te alloy.
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Submitted 2 October, 2020;
originally announced October 2020.
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Green luminescence and calculated optical properties of Cu ions in ZnO
Authors:
O. Volnianska,
P. Boguslawski
Abstract:
There are two characteristic optical transitions associated with Cu ions in ZnO, the 0.72 eV infrared and the 2.86 eV structured green luminescence (SGL). While the former is unambiguously related with the d(Cu2+) intra-shell transition, there is no generally accepted mechanism of the SGL. Besides the original model of Dingle [Phys. Rev. Lett. 23, 579 (1969)], two other mechanisms were recently pr…
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There are two characteristic optical transitions associated with Cu ions in ZnO, the 0.72 eV infrared and the 2.86 eV structured green luminescence (SGL). While the former is unambiguously related with the d(Cu2+) intra-shell transition, there is no generally accepted mechanism of the SGL. Besides the original model of Dingle [Phys. Rev. Lett. 23, 579 (1969)], two other mechanisms were recently proposed. We report an analysis of the optical properties of Cu in ZnO by ab initio calculations. The GGA+U approach is used, with the +U corrections applied to d(Zn), p(O) and d(Cu) orbitals. The results, compared with the available experimental data, support the Dingle's model, in which the SGL originates in the (Cu1+, hole) --> Cu2+ transition. A good agreement with experiment is obtained also for the internal transition at 0.72 eV. The absence of an expected radiative transition at about 2 eV is explained by its quasi-forbidden character.
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Submitted 7 November, 2019;
originally announced November 2019.
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Transition metal ions in ZnO: effects of intrashell Coulomb repulsion on electronic properties
Authors:
A. Ciechan,
P. Bogusławski
Abstract:
Electronic structure of the transition metal (TM) dopants in ZnO is calculated by first principles approach. Analysis of the results is focused on the properties determined by the intrashell Coulomb coupling. The role of both direct and exchange interaction channel is analyzed. The coupling is manifested in the strong charge state dependence of the TM gap levels, which leads to the metastability o…
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Electronic structure of the transition metal (TM) dopants in ZnO is calculated by first principles approach. Analysis of the results is focused on the properties determined by the intrashell Coulomb coupling. The role of both direct and exchange interaction channel is analyzed. The coupling is manifested in the strong charge state dependence of the TM gap levels, which leads to the metastability of photoexcited Mn, and determines the accessible equilibrium charge states of TM ions. The varying magnitude of the exchange coupling is reflected in the dependence of the spin splitting energy on the chemical identity across the 3$d$ series, as well as the charge state dependence of spin-up spin-down exchange splitting.
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Submitted 25 February, 2019;
originally announced February 2019.
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Alloy broadening of the transition to the non-trivial topological phase of Pb_{1-x}Sn_{x}Te
Authors:
A. Lusakowski,
P. Boguslawski,
T. Story
Abstract:
Transition between the topologically trivial and non-trivial phase of Pb_{1-x}Sn_{x}Te alloy is driven by the increasing content $x$ of Sn, or by the hydrostatic pressure for $x<0.3$. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging o…
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Transition between the topologically trivial and non-trivial phase of Pb_{1-x}Sn_{x}Te alloy is driven by the increasing content $x$ of Sn, or by the hydrostatic pressure for $x<0.3$. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging over various atomic configurations), the transitions are broadened. We find a surprisingly large interval of alloy composition, $0.3<x<0.6$, in which the energy gap is practically vanishing. A similar strong broadening is also obtained for transitions driven by hydrostatic pressure. Analysis of the band structure shows that the alloy broadening originates in splittings of the energy bands caused by the different chemical nature of Pb and Sn, and by the decreased crystal symmetry due to spatial disorder. Based on our results of ab initio and tight binding calculations for Pb_{1-x}Sn_{x}Te we discuss different criteria of discrimination between trivial and nontrivial topology of the band structure of alloys.
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Submitted 17 July, 2018;
originally announced July 2018.
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Calculated optical properties of Co in ZnO: internal and ionization transitions
Authors:
A. Ciechan,
P. Bogusławski
Abstract:
Previous luminescence and absorption experiments in Co-doped ZnO revealed two ionization and one intrashell transition of $d(\textrm{Co}^{2+})$ electrons. Those optical properties are analyzed within the generalized gradient approximation to the density functional theory. The two ionization channels involve electron excitations from the two $\textrm{Co}^{2+}$ gap states, the $t_{2\uparrow}$ triple…
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Previous luminescence and absorption experiments in Co-doped ZnO revealed two ionization and one intrashell transition of $d(\textrm{Co}^{2+})$ electrons. Those optical properties are analyzed within the generalized gradient approximation to the density functional theory. The two ionization channels involve electron excitations from the two $\textrm{Co}^{2+}$ gap states, the $t_{2\uparrow}$ triplet and the $e_{2\downarrow}$ doublet, to the conduction band. The third possible ionization channel, in which an electron is excited from the valence band to the $\textrm{Co}^{2+}$ level, requires energy in excess of 4~eV, and cannot lead to absorption below the ZnO band gap, contrary to earlier suggestions. We also consider two recombination channels, the direct recombination and a two-step process, in which a photoelectron is captured by $\textrm{Co}^{3+}$ and then recombines via the internal transition. Finally, the observed increase the band gap with the Co concentration is well reproduced by theory.
The accurate description of ZnO:Co is achieved after including $+U$ corrections to the relevant orbitals of Zn, O, and Co. The $+U(\textrm{Co})$ value was calculated by the linear response approach, and independently was obtained by fitting the calculated transition energies to the optical data. The respective values, 3.4 and 3.0~eV, agree well. Ionization of Co induces large energy shifts of the gap levels, driven by the varying Coulomb coupling between the $d(\textrm{Co})$ electrons, and by large lattice relaxations around Co ions. In turn, over $\sim 1$~eV changes of $\textrm{Co}^{2+}$ levels induced by the internal transition are mainly caused by the occupation-dependent $U(\textrm{Co})$ corrections.
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Submitted 25 February, 2019; v1 submitted 12 June, 2018;
originally announced June 2018.
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Metastability of Mn$^{3+}$ in ZnO driven by strong $d$(Mn) intrashell Coulomb repulsion: experiment and theory
Authors:
A. Ciechan,
H. Przybylińska,
P. Bogusławski,
A. Suchocki,
A. Grochot,
A. Mycielski,
P. Skupiński,
K. Grasza
Abstract:
Depopulation of the Mn$^{2+}$ state in ZnO:Mn upon illumination, monitored by quenching of the Mn$^{2+}$ EPR signal intensity, was observed at temperatures below 80~K. Mn$^{2+}$ photoquenching is shown to result from the Mn$^{2+}$ $\to$ Mn$^{3+}$ ionization transition, promoting one electron to the conduction band. Temperature dependence of this process indicates the existence of an energy barrier…
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Depopulation of the Mn$^{2+}$ state in ZnO:Mn upon illumination, monitored by quenching of the Mn$^{2+}$ EPR signal intensity, was observed at temperatures below 80~K. Mn$^{2+}$ photoquenching is shown to result from the Mn$^{2+}$ $\to$ Mn$^{3+}$ ionization transition, promoting one electron to the conduction band. Temperature dependence of this process indicates the existence of an energy barrier for electron recapture of the order of 1~meV. GGA$+U$ calculations show that after ionization of Mn$^{2+}$ a moderate breathing lattice relaxation in the 3+ charge state occurs, which increases energies of $d$(Mn) levels. At its equilibrium atomic configuration, Mn$^{3+}$ is metastable since the direct capture of photo-electron is not possible. The metastability is mainly driven by the strong intra-shell Coulomb repulsion between $d$(Mn) electrons. Both the estimated barrier for electron capture and the photoionization energy are in good agreement with the experimental values.
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Submitted 9 June, 2016;
originally announced June 2016.
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Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
Authors:
J. Papierska,
A. Ciechan,
P. Bogusławski,
M. Boshta,
M. M. Gomaa,
E. Chikoidze,
Y. Dumont,
A. Drabińska,
H. Przybylińska,
A. Gardias,
J. Szczytko,
A. Twardowski,
M. Tokarczyk,
G. Kowalski,
B. Witkowski,
K. Sawicki,
W. Pacuski,
M. Nawrocki,
J. Suffczyński
Abstract:
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient…
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Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2+ in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2+ to Fe3+ by non-intentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism and magneto-photoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%.We find a predicted increase of n-type conductivity upon the Fe do** with the Fe donor ionization energy of 0.25 +/- 0.02 eV consistent with the results of theoretical considerations. Moreover, our magnetooptical measurements confirm the calculated non-vanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3+ ions in the ZnO, being so far an unsettled issue.
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Submitted 2 December, 2016; v1 submitted 3 March, 2016;
originally announced March 2016.
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Magnetic anisotropy energy in disordered Ge_{1-x}Mn_{x}Te
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high c…
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We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high concentration of cation vacancies. We calculate the effect of this structural and chemical disorder on single ion magnetic anisotropy mechanism and show that its contribution is order of magnitude smaller as compared to magnetic anisotropy mechanism originating from the spin polarization induced by Mn ions into neighboring Te and Ge ions. We also discuss magnetic anisotropy effects due to pairs of Mn ions differently allocated in the lattice. The spatial averaging over chemical disorder strongly reduces the strength of this magnetic anisotropy mechanism and restores the global rhombohedral symmetry of magnetic system.
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Submitted 2 July, 2015;
originally announced July 2015.
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DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in part…
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Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.
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Submitted 25 May, 2015; v1 submitted 5 February, 2015;
originally announced February 2015.
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Ag and N acceptors in ZnO: ab initio study of acceptor pairing, do** efficiency, and the role of hydrogen
Authors:
O. Volnianska,
P. Boguslawski,
E. Kaminska
Abstract:
Efficiency of ZnO do** with Ag and N shallow acceptors, which substitute respectively cations and anions, was investigated. First principles calculations indicate a strong tendency towards formation of nearest neighbor Ag-N pairs and N-Ag-N triangles. Binding of acceptors stems from the formation of quasi-molecular bonds between dopants, and has a universal character in semiconductors. The pairi…
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Efficiency of ZnO do** with Ag and N shallow acceptors, which substitute respectively cations and anions, was investigated. First principles calculations indicate a strong tendency towards formation of nearest neighbor Ag-N pairs and N-Ag-N triangles. Binding of acceptors stems from the formation of quasi-molecular bonds between dopants, and has a universal character in semiconductors. The pairing increases energy levels of impurities, and thus lowers do** efficiency. In the presence of donors, pairing is weaker or even forbidden. However, hydrogen has a tendency to form clusters with Ag and N, which favors the Ag-N aggregation and lowers the acceptor levels of such complexes.
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Submitted 21 November, 2011;
originally announced November 2011.
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High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO: A first principles study
Authors:
O. Volnianska,
P. Boguslawski
Abstract:
High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO were analyzed by first principles calculations. The spin-polarized vacancy-induced level is located in the band gap in GaP, ZnO and BeO. In the nitrides, the stronger exchange coupling forces the vacancy states to be resonant with valence bands, forbids formation of positively charged vacancies in GaN and BN, and allows Al vaca…
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High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO were analyzed by first principles calculations. The spin-polarized vacancy-induced level is located in the band gap in GaP, ZnO and BeO. In the nitrides, the stronger exchange coupling forces the vacancy states to be resonant with valence bands, forbids formation of positively charged vacancies in GaN and BN, and allows Al vacancy in p-AlN to assume the highest possible S=2 spin state. The shape of the spin density, isotropic in the zinc blende structure, has a pronounced directional character in the wurtzite structure. Stability of spin polarization of the vacancy states is determined by spin polarization energies of anions, as well as by interatomic distances between the vacancy neighbors, and thus is given by both the lattice constant of the host and the atomic relaxations around the vacancy. Implications for experiment are discussed.
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Submitted 22 April, 2011;
originally announced April 2011.
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Mn Interstitial Diffusion in (Ga,Mn)As
Authors:
K. W. Edmonds,
P. Boguslawski,
K. Y. Wang,
R. P. Campion,
N. R. S. Farley,
B. L. Gallagher,
C. T. Foxon,
M. Sawicki,
T. Dietl,
M. B. Nardelli,
J. Bernholc
Abstract:
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, and resistivity measurements during annealing, show that the…
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We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, and resistivity measurements during annealing, show that the observed changes are due to out-diffusion of Mn interstitials towards the surface, governed by an energy barrier of about 0.7-0.8 eV. The Mn interstitial is a double donor resulting in compensation of charge carriers and suppression of ferromagnetism. Electric fields induced by high concentrations of substitutional Mn acceptors have a significant effect on the diffusion.
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Submitted 7 July, 2003;
originally announced July 2003.
