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Strain-induced speed-up of Mn$^{2+}$ spin-lattice relaxation in (Cd,Mn)Te/(Cd,Mg)Te quantum wells: a time-resolved ODMR study
Authors:
Aleksander Bogucki,
Aleksandra Łopion,
Karolina Ewa Połczyńska,
Wojciech Pacuski,
Tomasz Kazimierczuk,
Andrzej Golnik,
Piotr Kossacki
Abstract:
This study examines the spin-lattice relaxation rate of Mn$^{2+}$ ions in strained diluted magnetic semiconductor (Cd,Mn)Te/(Cd,Mg)Te quantum wells using the optically detected magnetic resonance (ODMR) technique. By adjusting the magnesium (Mg) content in the buffer layer, we created samples with different strain levels. Our time-resolved ODMR results show that the spin-lattice relaxation time be…
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This study examines the spin-lattice relaxation rate of Mn$^{2+}$ ions in strained diluted magnetic semiconductor (Cd,Mn)Te/(Cd,Mg)Te quantum wells using the optically detected magnetic resonance (ODMR) technique. By adjusting the magnesium (Mg) content in the buffer layer, we created samples with different strain levels. Our time-resolved ODMR results show that the spin-lattice relaxation time becomes faster as strain increases. We also found that the relaxation rate increases with both magnetic field and temperature, showing a power-law behavior. To understand these observations, we used a theoretical model based on six-level rate equations with non-equal level separations. This model suggests that the main factor affecting relaxation in our samples is a "direct" mechanism. The model's predictions match well with our experimental data. Overall, our findings give insights into spin-lattice relaxation in strained quantum wells and could be important for the development of future quantum and spintronic devices.
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Submitted 31 January, 2024;
originally announced February 2024.
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Magnetic ion relaxation time distribution within a quantum well
Authors:
Aleksandra Łopion,
Aleksander Bogucki,
Wiktor Kraśnicki,
Karolina E. Połczyńska,
Wojciech Pacuski,
Tomasz Kazimierczuk,
Andrzej Golnik,
Piotr Kossacki
Abstract:
Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to study the local deformation of the crystal lattice around magnetic ion as well as the ion spin relaxation time. Here we utilize selective Mn-do** to additionally enhance the inherent locality of the ODMR technique. We present the time-resolved ODMR studies of single {(Cd,Mg)Te/(Cd,Mn)Te} quantum wells (QWs) wit…
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Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to study the local deformation of the crystal lattice around magnetic ion as well as the ion spin relaxation time. Here we utilize selective Mn-do** to additionally enhance the inherent locality of the ODMR technique. We present the time-resolved ODMR studies of single {(Cd,Mg)Te/(Cd,Mn)Te} quantum wells (QWs) with manganese ions located at different positions along the growth axis -- in the center or on the sides of the quantum well. We observe that spin-lattice relaxation of Mn$^{2+}$ significantly depends on the ion-carrier wavefunction overlap at low-magnetic fields. Interestingly, the effect is clearly observed in spite of very low carrier density, which suggests the potential for control of the Mn$^{2+}$ ion relaxation rate by means of the electric field in future experiments.
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Submitted 20 July, 2023; v1 submitted 5 May, 2022;
originally announced May 2022.
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Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures
Authors:
A. Bogucki,
M. Goryca,
A. Łopion,
W. Pacuski,
K. E. Połczyńska,
J. Domagała,
M. Tokarczyk,
T. Fąs,
A. Golnik,
P. Kossacki
Abstract:
In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical…
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In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical reflectivity measurements and X-ray diffraction scans to evaluate the local strain present in QW material. In our analysis, we take into account different thermal expansion coefficients of GaAs substrate and CdTe buffer. The additional deformation due to the thermal expansion effects has the same magnitude as deformation origination from the different compositions of the samples. Based on the evaluated deformations and values of strain-induced axial-symmetry spin Hamiltonian parameter D, we find strain spin-lattice coefficient G11 = (72.2 +- 1.9) neV for Mn2+ in CdTe and shear deformation potential b = (-0.94 +- 0.11) eV for CdTe.
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Submitted 16 June, 2024; v1 submitted 11 June, 2021;
originally announced June 2021.
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Magnetoelastic interaction in the two-dimensional magnetic material MnPS$_3$ studied by first principles calculations and Raman experiments
Authors:
Diana Vaclavkova,
Alex Delhomme,
Clément Faugeras,
Marek Potemski,
Aleksander Bogucki,
Jan Suffczyński,
Piotr Kossacki,
Andrew Wildes,
Benoit Gremaud,
Andrés Saúl
Abstract:
We report experimental and theoretical studies on the magnetoelastic interactions in MnPS$_3$. Raman scattering response measured as a function of temperature shows a blue shift of the Raman active modes at 120.2 and 155.1 cm$^{-1}$, when the temperature is raised across the antiferromagnetic-paramagnetic transition. Density functional theory (DFT) calculations have been performed to estimate the…
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We report experimental and theoretical studies on the magnetoelastic interactions in MnPS$_3$. Raman scattering response measured as a function of temperature shows a blue shift of the Raman active modes at 120.2 and 155.1 cm$^{-1}$, when the temperature is raised across the antiferromagnetic-paramagnetic transition. Density functional theory (DFT) calculations have been performed to estimate the effective exchange interactions and calculate the Raman active phonon modes. The calculations lead to the conclusion that the peculiar behavior with temperature of the two low energy phonon modes can be explained by the symmetry of their corresponding normal coordinates which involve the virtual modification of the super-exchange angles associated with the leading antiferromagnetic (AFM) interactions.
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Submitted 22 May, 2020;
originally announced May 2020.
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The effect of metallic substrates on the optical properties of monolayer MoSe$_{2}$
Authors:
M. Grzeszczyk,
M. R. Molas,
K. Nogajewski,
M. Bartoš,
A. Bogucki,
C. Faugeras,
P. Kossacki,
A. Babiński,
M. Potemski
Abstract:
Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the effect of several metallic substrates on the optical properties of MoSe$_2$ monolayer (ML) deposited on top of them with photoluminescence and reflect…
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Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the effect of several metallic substrates on the optical properties of MoSe$_2$ monolayer (ML) deposited on top of them with photoluminescence and reflectance contrast techniques. The optical spectra of MoSe$_{2}$ MLs deposited on Pt, Au, Mo and Zr have distinctive metal-related lineshapes. In particular, a substantial variation in the intensity ratio and the energy separation between a negative trion and a neutral exciton is observed. It is shown that using metals as substrates affects the do** of S-TMD MLs. The explanation of the effect involves the Schottky barrier formation at the interface between the MoSe$_{2}$ ML and the metallic substrates. The alignment of energy levels at the metal/semiconductor junction allows for the transfer of charge carriers between them. We argue that a proper selection of metallic substrates can be a way to inject appropriate types of carriers into the respective bands of S-TMDs.
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Submitted 22 October, 2019;
originally announced October 2019.
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Readout of a dopant spin in the anisotropic quantum dot with a single magnetic ion
Authors:
Aleksander Rodek,
Tomasz Kazimierczuk,
Aleksander Bogucki,
Tomasz Smoleński,
Wojciech Pacuski,
Piotr Kossacki
Abstract:
Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical transitions, which give experimental access to spin states of an individual magnetic ion. We show, however, that physics of quantum dot excitons also complicate sp…
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Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical transitions, which give experimental access to spin states of an individual magnetic ion. We show, however, that physics of quantum dot excitons also complicate spin readout and optical spin manipulation in such a system. This is due to electron-hole exchange interaction in anisotropic quantum dots, which affects the polarization of the emission lines. One of the consequences is that the intensity of spectral lines in a single spectrum are not simply proportional to the population of various spin states of magnetic ion. In order to provide a solution of the above problem, we present a method of extracting both the spin polarisation degree of a neutral exciton and magnetic dopant inside a semiconductor quantum dot in an external magnetic field. Our approach is experimentally verified on a system of CdSe/ZnSe quantum dot containing a single Fe$^{2+}$ ion. Both the resonant and non-resonant excitation regimes are explored resulting in a record high optical orientation efficiency of dopant spin in the former case. The proposed solutions can be easily expanded to any other system of quantum dots containing magnetic dopants.
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Submitted 7 March, 2019;
originally announced March 2019.
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Charge transfer tuning in TiO2 hybrid nanostructures with acceptor-acceptor systems
Authors:
K. Pilarczyk,
K. Lewandowska,
K. Mech,
M. Kawa,
M. Gajewska,
B. Barszcz,
A. Bogucki,
A. Podborska,
K. Szaciłowski
Abstract:
An interesting interplay between two different modifiers and the surface of titanium dioxide leads to a significant change in photoelectrochemical properties of the designed hybrid materials. The semiconductor is photosensitized by one of the counterparts and exhibits the photoelectrochemical photocurrent switching effect thanks to interactions with graphene oxide - the second modifier mediates ch…
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An interesting interplay between two different modifiers and the surface of titanium dioxide leads to a significant change in photoelectrochemical properties of the designed hybrid materials. The semiconductor is photosensitized by one of the counterparts and exhibits the photoelectrochemical photocurrent switching effect thanks to interactions with graphene oxide - the second modifier mediates charge transfer processes in the system, allowing us to design the materials response at the molecular level. Based on the selection of molecular counterpart we may affect the behaviour of hybrids upon light irradiation in a different manner, which may be useful for the applications in photovoltaics, optoelectronics and photocatalysis. Here we focus particularly on the nanocomposites made of titanium dioxide with graphene oxide combined with either 2,3,5,6-tetrachlorobenzoquinone or 2,3-dichloro-5,6-dihydroxybenzoquinone - for these two materials we observed a major change in the charge transfer processes occurring in the system.
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Submitted 24 October, 2018;
originally announced October 2018.
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Time-resolved magneto-Raman study of carrier dynamics in low Landau levels of graphene
Authors:
Tomasz Kazimierczuk,
Aleksander Bogucki,
Tomasz Smoleński,
Mateusz Goryca,
Clément Faugeras,
Paweł Machnikowski,
Marek Potemski,
Piotr Kossacki
Abstract:
We study the relaxation dynamics of the electron system in graphene flakes under Landau quantization regime using a novel approach of time-resolved Raman scattering. The non-resonant character of the experiment allows us to analyze the field dependence of the relaxation rate. Our results clearly evidence sharp increase in the relaxation rate upon the resonance between the energy of the Landau tran…
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We study the relaxation dynamics of the electron system in graphene flakes under Landau quantization regime using a novel approach of time-resolved Raman scattering. The non-resonant character of the experiment allows us to analyze the field dependence of the relaxation rate. Our results clearly evidence sharp increase in the relaxation rate upon the resonance between the energy of the Landau transition and the G-band and shed new light on relaxation mechanism of the Landau-quantized electrons in graphene beyond the previously studied Auger scattering.
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Submitted 18 October, 2018;
originally announced October 2018.
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Direct determination of zero-field splitting for single Co$^{2+}$ ion embedded in a CdTe/ZnTe quantum dot
Authors:
J. Kobak,
A. Bogucki,
T. Smoleński,
M. Papaj,
M. Koperski,
M. Potemski,
P. Kossacki,
A. Golnik,
W. Pacuski
Abstract:
When Co$^{2+}$ impurity is embedded in semiconductor structure, crystal strain strongly influences zero-filed splitting between Co$^{2+}$ states with spin projection $S_z = \pm 3/2$ and $S_z = \pm 1/2$. Experimental evidences of this effect have been given in previous studies, however direct measurement of the strain induced zero-field splitting has been inaccessible so far. Here this splitting is…
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When Co$^{2+}$ impurity is embedded in semiconductor structure, crystal strain strongly influences zero-filed splitting between Co$^{2+}$ states with spin projection $S_z = \pm 3/2$ and $S_z = \pm 1/2$. Experimental evidences of this effect have been given in previous studies, however direct measurement of the strain induced zero-field splitting has been inaccessible so far. Here this splitting is determined thanks to magneto-optical studies of individual Co$^{2+}$ ion in epitaxial CdTe quantum dot in ZnTe barrier. Using partially allowed optical transitions we measure strain induced zero-field splitting of Co$^{2+}$ ion directly on excitonic photoluminescence spectrum. Moreover, by observation of anticrossing of $S_z = + 3/2$ and $S_z = - 1/2$ Co$^{2+}$ spin states in magnetic field, we determine axial and in-plane components of crystal field acting on Co$^{2+}$. Proposed technique can be applied for optical determination of zero-field splitting of other transition metal ions in quantum dots.
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Submitted 18 October, 2016;
originally announced October 2016.
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Anisotropy of in-plane hole g-factor in CdTe/ZnTe quantum dots
Authors:
A. Bogucki,
T. Smoleński,
M. Goryca,
T. Kazimierczuk,
J. Kobak,
W. Pacuski,
P. Wojnar,
P. Kossacki
Abstract:
Optical studies of a bright exciton provide only limited information about the hole anisotropy in a quantum dot. In this work we present a universal method to study heavy hole anisotropy using a dark exciton in a moderate in-plane magnetic field. By analysis of the linear polarization of the dark exciton photoluminescence we identify both isotropic and anisotropic contributions to the hole g-facto…
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Optical studies of a bright exciton provide only limited information about the hole anisotropy in a quantum dot. In this work we present a universal method to study heavy hole anisotropy using a dark exciton in a moderate in-plane magnetic field. By analysis of the linear polarization of the dark exciton photoluminescence we identify both isotropic and anisotropic contributions to the hole g-factor. We employ this method for a number of individual self-assembled CdTe/ZnTe quantum dots, demonstrating a variety of behaviors of in-plane hole g-factor: from almost fully anisotropic to almost isotropic. We conclude that, in general, both contributions play an important role and neither contribution can be neglected.
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Submitted 9 April, 2016;
originally announced April 2016.
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Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots
Authors:
J. Kobak,
T. Smoleński,
M. Goryca,
J. -G. Rousset,
W. Pacuski,
A. Bogucki,
K. Oreszczuk,
P. Kossacki,
M. Nawrocki,
A. Golnik,
J. Płachta,
P. Wojnar,
C. Kruse,
D. Hommel,
M. Potemski,
T. Kazimierczuk
Abstract:
We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to det…
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We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71); diamagnetic shift $γ=$2.5 $μ$eV$/$T$^{2}$ ($γ=$1.3 $μ$eV$/$T$^{2}$). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.
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Submitted 19 February, 2016;
originally announced February 2016.
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Epitaxial growth and Photoluminescence Excitation spectroscopy of CdSe Quantum Dots in (Zn,Cd)Se barrier
Authors:
J. Piwowar,
W. Pacuski,
T. Smoleński,
M. Goryca,
A. Bogucki,
A. Golnik,
M. Nawrocki,
P. Kossacki,
J. Suffczyński
Abstract:
Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the energy of Mn$^{2+}$ ions internal transition (2.1 eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e. g., the li…
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Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the energy of Mn$^{2+}$ ions internal transition (2.1 eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e. g., the light sources in high quantum yield magnetooptical devices. Polarization resolved Photoluminescence Excitation measurements of individual QDs reveal sharp ($Γ<$ 150 $μ$eV) maxima and transfer of optical polarization to QD confining charged exciton state with efficiency attaining 26 %. The QD do** with single Mn$^{2+}$ ions is achieved.
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Submitted 24 December, 2015;
originally announced December 2015.
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Designing quantum dots for solotronics
Authors:
J. Kobak,
T. Smoleński,
M. Goryca,
M. Papaj,
K. Gietka,
A. Bogucki,
M. Koperski,
J. -G. Rousset,
J. Suffczyński,
E. Janik,
M. Nawrocki,
A. Golnik,
P. Kossacki,
W. Pacuski
Abstract:
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non…
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Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.
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Submitted 23 August, 2013;
originally announced August 2013.
