The role of surface states in electrocatalyst-modified semiconductor photoelectrodes: Theory and simulations
Authors:
Thomas J. Mills,
Forrest A. L. Laskowski,
Christian Dette,
Michael R. Nellist,
Fuding Lin,
Shannon W. Boettcher
Abstract:
In the last several years, there has been a wealth of studies to clarify the role of thin layers of electrocatalysts on semiconducting photoelectrodes to the efficiency of the oxygen evolution reaction (OER). It has been shown that the addition of a thin oxide overlayer in many cases cathodically shifts the potential of photocurrent onset and/or increases the maximum photocurrent, leading to great…
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In the last several years, there has been a wealth of studies to clarify the role of thin layers of electrocatalysts on semiconducting photoelectrodes to the efficiency of the oxygen evolution reaction (OER). It has been shown that the addition of a thin oxide overlayer in many cases cathodically shifts the potential of photocurrent onset and/or increases the maximum photocurrent, leading to greater collection efficiencies beneficial for OER. However, the origin of this enhancement is not well understood. Here, we present a model relying on analytical expressions rather than differential equations to investigate the role of surface states in electrocatalyst-modified semiconductor photoelectrodes. Without catalyst overlayer, we find that if surface states are screened, meaning charged surface states are electronically neutralized via nearby solution ions, no Helmholtz potential is generated and photoelectrodes exhibit good performance. In contrast, if the surface states are unscreened, an additional Helmholtz potential forms decreasing the amount of band bending and resulting in poor performance. In the presence of a catalyst overlayer, there is a strong dependence on how the surface states interact with the catalyst. Catalysts in series with surface states can increase the effective rate of transfer from surface states to solution, leading to an increase in total current while catalysts that act in parallel with surface states can increase the open circuit voltage or photovoltage. Both series and parallel catalyst effects operate in tandem in real devices, leading to an increase in current and/or photovoltage, depending on the relevant exchange currents. This model does not only help to understand the role of surface states in charge transfer and ultimately efficiencies in photoelectrochemical systems but also allows facile application for other researchers.
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Submitted 10 July, 2017;
originally announced July 2017.
Solar energy conversion properties and defect physics of ZnSiP$_2$
Authors:
Aaron D. Martinez,
Emily L. Warren,
Prashun Gorai,
Kasper A. Borup,
Darius Kuciauskas,
Patricia C. Dippo,
Brenden R. Ortiz,
Robin T. Macaluso,
Sau D. Nguyen,
Ann L. Greenaway,
Shannon W. Boettcher,
Andrew G. Norman,
Vladan Stevanović,
Eric S. Toberer,
Adele C. Tamboli
Abstract:
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with…
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Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials.
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Submitted 29 December, 2015; v1 submitted 17 June, 2015;
originally announced June 2015.
