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Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices
Authors:
Bejoys Jacob,
Filipe Camarneiro,
Jérôme Borme,
Oleksandr Bondarchuk,
Jana B. Nieder,
Bruno Romeira
Abstract:
Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and cap** dielectric layer can best reproducibly protect the crystal surface of I…
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Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and cap** dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.
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Submitted 30 June, 2022;
originally announced June 2022.
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A Strategic Approach to Advance Magnet Technology for Next Generation Colliders
Authors:
G. Ambrosio,
K. Amm,
M. Anerella,
G. Apollinari,
D. Arbelaez,
B. Auchmann,
S. Balachandran,
M. Baldini,
A. Ballarino,
S. Barua,
E. Barzi,
A. Baskys,
C. Bird,
J. Boerme,
E. Bosque,
L. Brouwer,
S. Caspi,
N. Cheggour,
G. Chlachidze,
L. Cooley,
D. Davis,
D. Dietderich,
J. DiMarco,
L. English,
L. Garcia Fajardo
, et al. (52 additional authors not shown)
Abstract:
Colliders are built on a foundation of superconducting magnet technology that provides strong dipole magnets to maintain the beam orbit and strong focusing magnets to enable the extraordinary luminosity required to probe physics at the energy frontier. The dipole magnet strength plays a critical role in dictating the energy reach of a collider, and the superconducting magnets are arguably the domi…
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Colliders are built on a foundation of superconducting magnet technology that provides strong dipole magnets to maintain the beam orbit and strong focusing magnets to enable the extraordinary luminosity required to probe physics at the energy frontier. The dipole magnet strength plays a critical role in dictating the energy reach of a collider, and the superconducting magnets are arguably the dominant cost driver for future collider facilities. As the community considers opportunities to explore new energy frontiers, the importance of advanced magnet technology - both in terms of magnet performance and in the magnet technology's potential for cost reduction - is evident, as the technology status is essential for informed decisions on targets for physics reach and facility feasibility.
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Submitted 26 March, 2022;
originally announced March 2022.
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Room temperature two terminal tunnel magnetoresistance in lateral graphene transistor
Authors:
C. I. L. de Araujo,
H. A. Teixeira,
O. O. Toro,
C. Liao,
J. Borme,
L. C. Benetti,
D. Schafer,
I. S. Brandt,
R. Ferreira,
P. Alpuim,
P. P. Freitas,
A. A. Pasa
Abstract:
We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the H…
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We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the Hanle effect, and the tuning of relation between electrode resistance area present in the device architecture, allowed us to observe local tunnel magnetoresistance at room temperature, a new finding for this type of device. Results also indicate that while pure spin currents are less sensitive to temperature variations, spin-polarized current switching by external voltage is more efficient, due to a combination of the Rashba effect and change in carrier mobility by Fermi level shift
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Submitted 20 November, 2021;
originally announced November 2021.
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Superior ultra-transparent broadband terahertz polarizers by nanoimprint lithography
Authors:
Alexandre Chícharo,
Tatiana G. Rappoport,
Chun-Da Liao,
Jérôme Borme,
Nuno M. R. Peres,
Pedro Alpuim
Abstract:
We report the largest broadband terahertz (THz) polarizer based on a flexible ultra-transparent cyclic olefin copolymer (COC). The COC polarizers were fabricated by nanoimprint soft lithography with the lowest reported pitch of 2 or 3 micrometers and depth of 3 micrometers and sub-wavelength Au bilayer wire grid. Fourier Transform Infrared spectroscopy in a large range of 0.9 -20 THz shows transmi…
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We report the largest broadband terahertz (THz) polarizer based on a flexible ultra-transparent cyclic olefin copolymer (COC). The COC polarizers were fabricated by nanoimprint soft lithography with the lowest reported pitch of 2 or 3 micrometers and depth of 3 micrometers and sub-wavelength Au bilayer wire grid. Fourier Transform Infrared spectroscopy in a large range of 0.9 -20 THz shows transmittance of bulk materials such as doped and undoped Si and polymers. COC polarizers present more than doubled transmission intensity and larger transmitting band when compared to Si. COC polarizers present superior performance when compared to Si polarizers, with extinctions ratios of at least 4.4 dB higher and registered performance supported by numerical simulations. Fabricated Si and COC polarizers' show larger operation gap when compared to a commercial polarizer. Fabrication of these polarizers can be easily up-scaled which certainly meets functional requirements for many THz devices and applications, such as high transparency, lower cost fabrication and flexible material.
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Submitted 19 February, 2021;
originally announced February 2021.
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Tuning magnetic charge population and mobility in unidirectional array of nanomagnets as a function of lattice parameters
Authors:
R. S. Gonçalves,
R. P. Loreto,
J. Borme,
P. P. Freitas,
C. I. L. Araujo
Abstract:
Sets of nanomagnets are often utilized to mimic cellular automata in design of nanomagnetic logic devices or frustration and emergence of magnetic charges in artificial spin ice systems. in previous work we showed that unidirectional arrangement of nanomagnets can behave as artificial spin ice, with frustration arising from second neighbor dipolar interaction, and present good magnetic charge mobi…
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Sets of nanomagnets are often utilized to mimic cellular automata in design of nanomagnetic logic devices or frustration and emergence of magnetic charges in artificial spin ice systems. in previous work we showed that unidirectional arrangement of nanomagnets can behave as artificial spin ice, with frustration arising from second neighbor dipolar interaction, and present good magnetic charge mobility due to the low string tension among charges. Here, we present an experimental investigation of magnetic charge population and mobility in function of lateral and longitudinal distance among nanomagnets. Our results corroborate partially the theoretical predictions, performed elsewhere by emergent interaction model, could be useful in nanomagnet logic devices design and brings new insights about the best design for magnetic charge ballistic transport under low external magnetic field with magnetic charge mobility tunning for application in magnetricity.
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Submitted 6 September, 2018; v1 submitted 28 August, 2018;
originally announced August 2018.
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Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions
Authors:
M. Tarequzzaman,
A. S. Jenkins,
T. Böhnert,
J. Borme,
L. Martins,
E. Paz,
R. Ferreira,
P. P. Freitas
Abstract:
In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is im…
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In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency can be made as large as 11%.
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Submitted 11 April, 2018;
originally announced April 2018.
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Magnetic oscillations Excited by Concurrent Spin Injection from a Tunneling Current and a Spin Hall Current
Authors:
M. Tarequzzaman,
T. Böhnert,
M. Decker,
J. D. Costa,
J. Borme,
B. Lacoste,
E. Paz,
A. S. Jenkins,
S. Serrano-Guisan,
C. H. Back,
R. Ferreira,
P. P. Freitas
Abstract:
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the c…
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In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the critical tunneling current to zero. This reduction of the critical charge currents can improve the endurance of both STNOs and non-volatile magnetic memories (MRAM) devices. It is shown that the system response can be described in terms of an injected spin current density $J_s$ which results from the contribution of both spin injection mechanisms, with the tunneling current polarization $p$ and the spin Hall angle $θ$ acting as key parameters determining the efficiency of each injection mechanism. The experimental data exhibits an excellent agreement with this model which can be used to quantitatively predict the critical points ($J_s = -2.26\pm 0.09 \times 10^9 \hbar/e$ A/m$^2$) and the oscillation amplitude as a function of the input currents. In addition, the fitting of the data also allows an independent confirmation of the values estimated for the spin Hall angle and tunneling current polarization as well as the extraction of the dam** $α= 0.01$ and non-linear dam** $Q = 3.8\pm 0.3$ parameters.
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Submitted 6 February, 2018;
originally announced February 2018.
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Experimental and theoretical evidences for the ice regime in planar artificial spin ices
Authors:
R. P. Loreto,
F. S. Nascimento,
R. S. Gonçalves,
J. Borme,
J. C. Cezar,
C. Nisoli,
A. R. Pereira,
C. I. L. de Araujo
Abstract:
In this work, we explore a kind of geometrical effect in the thermodynamics of artificial spin ices (ASI). In general, such artificial materials are athermal. Here, We demonstrate that geometrically driven dynamics in ASI can open up the panorama of exploring distinct ground states and thermally magnetic monopole excitations. It is shown that a particular ASI lattice will provide a richer thermody…
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In this work, we explore a kind of geometrical effect in the thermodynamics of artificial spin ices (ASI). In general, such artificial materials are athermal. Here, We demonstrate that geometrically driven dynamics in ASI can open up the panorama of exploring distinct ground states and thermally magnetic monopole excitations. It is shown that a particular ASI lattice will provide a richer thermodynamics with nanomagnet spins experiencing less restriction to flip precisely in a kind of rhombic lattice. This can be observed by analysis of only three types of rectangular artificial spin ices (RASI). Denoting the horizontal and vertical lattice spacings by a and b, respectively, then, a RASI material can be described by its aspect ratio $γ$=a/b. The rhombic lattice emerges when $γ$=$\sqrt{3}$. So, by comparing the impact of thermal effects on the spin flips in these three appropriate different RASI arrays, it is possible to find a system very close to the ice regime.
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Submitted 6 December, 2018; v1 submitted 9 October, 2017;
originally announced October 2017.
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Realization of Rectangular Artificial Spin Ice and Direct Observation of High Energy Topology
Authors:
I. R. B. Ribeiro,
F. S. Nascimento,
S. O. Ferreira,
W. A. Moura-Melo,
C. A. R. Costa,
J. Borme,
P. P. Freitas,
G. M. Wysin,
C. I. L. de Araujo,
A. R. Pereira
Abstract:
In this letter, we have constructed and experimentally investigated frustrated arrays of dipoles forming two-dimensional artificial spin ices with different lattice parameters (rectangular arrays with horizontal and vertical lattice spacings denoted by $a$ and $b$ respectively). Arrays with three different ratios $γ=a/b = \sqrt{2}$, $\sqrt{3}$ and $\sqrt{4}$ are studied. Theoretical calculations o…
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In this letter, we have constructed and experimentally investigated frustrated arrays of dipoles forming two-dimensional artificial spin ices with different lattice parameters (rectangular arrays with horizontal and vertical lattice spacings denoted by $a$ and $b$ respectively). Arrays with three different ratios $γ=a/b = \sqrt{2}$, $\sqrt{3}$ and $\sqrt{4}$ are studied. Theoretical calculations of low-energy demagnetized configurations for these same parameters are also presented. Experimental data for demagnetized samples confirm most of the theoretical results. However, the highest energy topology (doubly-charged monopoles) does not emerge in our theoretical model, while they are seen in experiments for large enough $γ$. Our results also insinuate that magnetic monopoles may be almost free in rectangular lattices with a critical ratio $γ= γ_{c} = \sqrt{3}$, supporting previous theoretical predictions.
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Submitted 24 April, 2017;
originally announced April 2017.
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Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
Authors:
N. C. S. Vieira,
J. Borme,
G. Machado Jr.,
F. Cerqueira,
P. P. Freitas,
V. Zucolotto,
N. M. R. Peres,
P. Alpuim
Abstract:
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer…
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Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm2 V-1 s-1. As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research.
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Submitted 7 January, 2016;
originally announced January 2016.
