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Reconfigurable classifier based on spin torque driven magnetization switching in electrically connected magnetic tunnel junctions
Authors:
A. Lopez,
D. Costa,
T. Bohnert,
P. P. Freitas,
R. Ferreira,
I. Barbero,
J. Camarero,
C. Leon,
J. Grollier,
M. Romera
Abstract:
A promising branch of neuromorphic computing aims to perform cognitive operations in hardware leveraging the physics of efficient and well-established nano-devices. In this work, we present a reconfigurable classifier based on a network of electrically connected magnetic tunnel junctions that categorizes information encoded in the amplitude of input currents through the spin torque driven magnetiz…
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A promising branch of neuromorphic computing aims to perform cognitive operations in hardware leveraging the physics of efficient and well-established nano-devices. In this work, we present a reconfigurable classifier based on a network of electrically connected magnetic tunnel junctions that categorizes information encoded in the amplitude of input currents through the spin torque driven magnetization switching output configuration. The network can be trained to classify new data by adjusting additional programming currents applied selectively to the junctions. We experimentally demonstrate that a network composed of three magnetic tunnel junctions can learn to classify spoken vowels with a recognition rate that surpasses the performance of software multilayer neural networks with the same number of trained parameters in this task. These results, obtained with the same nano-devices and working principle employed in industrial spin-transfer torque magnetic random-access memories (STT-MRAM), constitute an important step towards the development of large-scale neuromorphic networks based on well-established technology.
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Submitted 9 July, 2024;
originally announced July 2024.
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Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Cap** Layer Materials and Thickness on Device Characteristics
Authors:
Tahereh Sadat Parvini,
Elvira Paz,
Tim Böhnert,
Alejandro Schulman,
Luana Benetti,
Felix Oberbauer,
Jakob Walowski,
Farshad Moradi,
Ricardo Ferreira,
Markus Münzenberg
Abstract:
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magn…
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We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magnetic memory, logic, and signal processing. The only distinguishing factor between the two categories, denoted as A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21 Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs. Our study reveals that B-MTJs exhibit lower critical currents for auto-oscillation than A-MTJs. We found that both stacks have comparable saturation magnetization and anisotropy field, suggesting that the difference in auto-oscillation behavior is due to the higher dam** of A-MTJs compared to B-MTJs. To verify this hypothesis, we employed the all-optical time-resolved magneto-optical Kerr effect (TRMOKE) technique, which confirmed that STT-MTJs with lower dam** exhibited auto-oscillation at lower critical current values. Additionally, our study aimed to optimize the STT-MTJ performance by investigating the impact of the cap** layer on the device's response to electronic and optical stimuli.
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Submitted 30 May, 2023; v1 submitted 22 March, 2023;
originally announced March 2023.
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Spin-Orbit Torque Flash Analog-to-Digital Converter
Authors:
Hamdam Ghanatian,
Luana Benetti,
Pedro Anacleto,
Tim Bohnert,
Hooman Farkhani,
Ricardo Ferreira,
Farshad Moradi
Abstract:
Although Analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic comput…
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Although Analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic computing, and so on. In this paper, a proof-of-concept of a 3-bit spin-CMOS Flash ADC using in-plane-anisotropy magnetic tunnel junctions (i-MTJs) with spin-orbit torque (SOT) switching mechanism is designed, fabricated and characterized. The proposed ADC replaces the current mirrors and power-hungry comparators in the conventional Flash ADC with seven parallel i-MTJs with different heavy metal (HM) widths. Monte-Carlo simulations based on the experimental measurements show the process variations/mismatch limits the accuracy of the proposed ADC to 2 bits. Moreover, the maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.739 LSB (least significant bit) and 0.7319 LSB, respectively.
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Submitted 9 January, 2023;
originally announced January 2023.
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Spin-Orbit-Torque-based Devices, Circuits and Architectures
Authors:
Farshad Moradi,
Hooman Farkhani,
Behzad Zeinali,
Hamdam Ghanatian,
Johan Michel Alain Pelloux-Prayer,
Tim Boehnert,
Mohammad Zahedinejad,
Hadi Heidari,
Vahid Nabaei,
Ricardo Ferreira,
Johan Akerman,
Jens Kargaard Madsen
Abstract:
Spintronics, the use of spin of an electron instead of its charge, has received huge attention from research communities for different applications including memory, interconnects, logic implementation, neuromorphic computing, and many other applications. Here, in this paper, we review the works within spintronics, more specifically on spin-orbit torque (SOT) within different research groups. We a…
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Spintronics, the use of spin of an electron instead of its charge, has received huge attention from research communities for different applications including memory, interconnects, logic implementation, neuromorphic computing, and many other applications. Here, in this paper, we review the works within spintronics, more specifically on spin-orbit torque (SOT) within different research groups. We also provide researchers an insight into the future potentials of the SOT-based designs. This comprehensive review paper covers different aspects of SOT-based design from device and circuit to architecture level as well as more ambitious and futuristic applications of such technology.
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Submitted 3 December, 2019;
originally announced December 2019.
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Blip: JIT and Footloose On The Edge
Authors:
Andy Edmonds,
Chris Woods,
Ana Juan Ferrer,
Juan Francisco Ribera,
Thomas Micheal Bohnert
Abstract:
Edge environments offer a number of advantages for software developers including the ability to create services which can offer lower latency, better privacy, and reduced operational costs than traditional cloud hosted services. However large technical challenges exist, which prevent developers from utilising the Edge; complexities related to the heterogeneous nature of the Edge environment, issue…
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Edge environments offer a number of advantages for software developers including the ability to create services which can offer lower latency, better privacy, and reduced operational costs than traditional cloud hosted services. However large technical challenges exist, which prevent developers from utilising the Edge; complexities related to the heterogeneous nature of the Edge environment, issues with orchestration and application management and lastly, the inherent issues in creating decentralised distributed applications which operate at a large geographic scale. In this conceptual and architectural paper we envision a solution, Blip, which offers an easy to use programming and operational environment which addresses the these issues. It aims to remove the technical barriers which will inhibit the wider adoption Edge application development. This paper validates the Blip concept by demonstrating how it will deliver on the advantages of the Edge for a familiar scenario.
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Submitted 31 May, 2018;
originally announced June 2018.
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Excitation and coherent control of magnetization dynamics in magnetic tunnel junctions using acoustic pulses
Authors:
H. F. Yang,
F. Garcia-Sanchez,
X. K. Hu,
S. Sievers,
T. Böhnert,
J. D. Costa,
M. Tarequzzaman,
R. Ferreira,
M. Bieler,
H. W. Schumacher
Abstract:
We experimentally study magnetization dynamics in magnetic tunnel junctions driven by femtosecond-laser-induced surface acoustic waves. The acoustic pulses induce a magnetization precession in the free layer of the magnetic tunnel junction through magnetoelastic coupling. The frequency and amplitude of the precession shows a pronounced dependence on the applied magnetic field and the laser excitat…
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We experimentally study magnetization dynamics in magnetic tunnel junctions driven by femtosecond-laser-induced surface acoustic waves. The acoustic pulses induce a magnetization precession in the free layer of the magnetic tunnel junction through magnetoelastic coupling. The frequency and amplitude of the precession shows a pronounced dependence on the applied magnetic field and the laser excitation position. Comparing the acoustic-wave-induced precession frequencies with precession induced by charge currents and with micromagnetic simulations we identify spatially non-uniform magnetization modes localized close the edge regions as being responsible for the optically induced magnetization dynamics. The experimental scheme even allows us to coherently control the magnetization precession using two acoustic pulses. This might prove important for future applications requiring ultrafast spin manipulation. Additionally, our results directly pinpoint the importance of acoustic pulses since they could be relevant when investigating optically-induced temperature effects in magnetic structures.
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Submitted 27 April, 2018;
originally announced April 2018.
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Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions
Authors:
M. Tarequzzaman,
A. S. Jenkins,
T. Böhnert,
J. Borme,
L. Martins,
E. Paz,
R. Ferreira,
P. P. Freitas
Abstract:
In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is im…
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In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency can be made as large as 11%.
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Submitted 11 April, 2018;
originally announced April 2018.
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Magnetic oscillations Excited by Concurrent Spin Injection from a Tunneling Current and a Spin Hall Current
Authors:
M. Tarequzzaman,
T. Böhnert,
M. Decker,
J. D. Costa,
J. Borme,
B. Lacoste,
E. Paz,
A. S. Jenkins,
S. Serrano-Guisan,
C. H. Back,
R. Ferreira,
P. P. Freitas
Abstract:
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the c…
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In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the critical tunneling current to zero. This reduction of the critical charge currents can improve the endurance of both STNOs and non-volatile magnetic memories (MRAM) devices. It is shown that the system response can be described in terms of an injected spin current density $J_s$ which results from the contribution of both spin injection mechanisms, with the tunneling current polarization $p$ and the spin Hall angle $θ$ acting as key parameters determining the efficiency of each injection mechanism. The experimental data exhibits an excellent agreement with this model which can be used to quantitatively predict the critical points ($J_s = -2.26\pm 0.09 \times 10^9 \hbar/e$ A/m$^2$) and the oscillation amplitude as a function of the input currents. In addition, the fitting of the data also allows an independent confirmation of the values estimated for the spin Hall angle and tunneling current polarization as well as the extraction of the dam** $α= 0.01$ and non-linear dam** $Q = 3.8\pm 0.3$ parameters.
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Submitted 6 February, 2018;
originally announced February 2018.
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Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study
Authors:
Anna Corinna Niemann,
Tim Böhnert,
Ann-Kathrin Michel,
Svenja Bäßler,
Bernd Gotsmann,
Katalin Neuróhr,
Bence Tóth,
László Péter,
Imre Bakonyi,
Victor Vega,
Victor M. Prida,
Johannes Gooth,
Kornelius Nielsch
Abstract:
Thermoelectric (TE) measurements have been performed on the workhorses of today's data storage devices, exhibiting either the giant or the anisotropic magnetoresistance effect (GMR and AMR). The temperature-dependent (50-300 K) and magnetic field-dependent (up to 1 T) TE power factor (PF) has been determined for several Co-Ni alloy nanowires with varying Co:Ni ratios as well as for Co-Ni/Cu multil…
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Thermoelectric (TE) measurements have been performed on the workhorses of today's data storage devices, exhibiting either the giant or the anisotropic magnetoresistance effect (GMR and AMR). The temperature-dependent (50-300 K) and magnetic field-dependent (up to 1 T) TE power factor (PF) has been determined for several Co-Ni alloy nanowires with varying Co:Ni ratios as well as for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, which were all synthesized via a template-assisted electrodeposition process. A systematic investigation of the resistivity, as well as the Seebeck coefficient, is performed for Co-Ni alloy nanowires and Co-Ni/Cu multilayered nanowires. At room temperature, measured values of TE PFs up to 3.6 mWK-2m-1 for AMR samples and 2.0 mWK-2m-1 for GMR nanowires are obtained. Furthermore, the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowires and by up to 52 % for GMR Co-Ni/Cu samples in an external applied magnetic field. The magnetic nanowires exhibit TE PFs that are of the same order of magnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and, additionally, give the opportunity to adjust the TE power output to changing loads and hotspots through external magnetic fields.
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Submitted 2 January, 2017;
originally announced January 2017.
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Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires
Authors:
Tim Böhnert,
Anna Corinna Niemann,
Ann-Kathrin Michel,
Svenja Bäßler,
Johannes Gooth,
Bence G. Tóth,
Katalin Neuróhr,
László Péter,
Imre Bakonyi,
Victor Vega,
Victor M. Prida,
Kornelius Nielsch
Abstract:
The magnetothermopower and the magnetoresistance of single Co Ni/Cu multilayered nan-owires with various thicknesses of the Cu spacer are investigated. Both kinds of measurement have been performed as a function of temperature (50 K to 325 K) and under applied magnetic fields perpendicular to the nanowire axis, with magnitudes up to 15 % at room temperature. A linear relation between thermopower S…
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The magnetothermopower and the magnetoresistance of single Co Ni/Cu multilayered nan-owires with various thicknesses of the Cu spacer are investigated. Both kinds of measurement have been performed as a function of temperature (50 K to 325 K) and under applied magnetic fields perpendicular to the nanowire axis, with magnitudes up to 15 % at room temperature. A linear relation between thermopower S and electrical conductivity σ of the nanowires is found, with the magnetic field as an implicit variable. Combining the linear behavior of the S vs. σ and the Mott formula, the energy derivative of the resistivity has been determined. In order to extract the true nanowire materials parameters from the measured thermopower, a simple model based on the Mott formula is employed to distinguish the individual thermopower contributions of the sample. By assuming that the non-diffusive thermopower contributions of the nanowire can be neglected, it was found that the magnetic field induced changes of thermopower and resistivity are equivalent. The emphasis in the present paper is on the comparison of the magnetoresistance and magnetothermopower results and it is found that the same correlation is valid between the two sets of data for all samples, irrespective of the relative importance of the giant magnetoresistance or anisotropic magnetoresistance contributions in the various individual nanowires.
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Submitted 21 December, 2016;
originally announced December 2016.
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Magnon contribution to the magnetoresistance of iron nanowires deposited using pulsed electrodeposition
Authors:
Philip Sergelius,
Josep M Montero Moreno,
Martin Waleczek,
Tim Böhnert,
Detlef Görlitz,
Kornelius Nielsch
Abstract:
Iron nanowires with a square cross section are grown by pulsed electrodeposition within a newly developed nanochannel template that allows for easy characterization. Measurements of the magnetoresistance as a function of magnetic field and temperature are performed within a large parameter window allowing for the investigation of the magnonic contribution to the magnetoresistance of electrodeposit…
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Iron nanowires with a square cross section are grown by pulsed electrodeposition within a newly developed nanochannel template that allows for easy characterization. Measurements of the magnetoresistance as a function of magnetic field and temperature are performed within a large parameter window allowing for the investigation of the magnonic contribution to the magnetoresistance of electrodeposited iron nanowires. Values for the temperature dependent magnon stiffness D(T) are extracted.
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Submitted 30 March, 2015;
originally announced March 2015.
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Towards a Swiss National Research Infrastructure
Authors:
Peter Kunszt,
Sergio Maffioletti,
Dean Flanders,
Markus Eurich,
Thomas Bohnert,
Andrew Edmonds,
Heinz Stockinger,
Sigve Haug,
Almerina Jamakovic-Kapic,
Placi Flury,
Simon Leinen,
Eryk Schiller
Abstract:
In this position paper we describe the current status and plans for a Swiss National Research Infrastructure. Swiss academic and research institutions are very autonomous. While being loosely coupled, they do not rely on any centralized management entities. Therefore, a coordinated national research infrastructure can only be established by federating the various resources available locally at the…
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In this position paper we describe the current status and plans for a Swiss National Research Infrastructure. Swiss academic and research institutions are very autonomous. While being loosely coupled, they do not rely on any centralized management entities. Therefore, a coordinated national research infrastructure can only be established by federating the various resources available locally at the individual institutions. The Swiss Multi-Science Computing Grid and the Swiss Academic Compute Cloud projects serve already a large number of diverse user communities. These projects also allow us to test the operational setup of such a heterogeneous federated infrastructure.
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Submitted 30 April, 2014;
originally announced April 2014.
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Magneto-thermoelectric figure of merit of Co/Cu multilayers
Authors:
X. K. Hu,
P. Krzysteczko,
N. Liebing,
S. Serrano-Guisan,
K. Rott,
G. Reiss,
J. Kimling,
T. Böhnert,
K. Nielsch,
H. W. Schumacher
Abstract:
The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the t…
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The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the thermoelectric power factor. The Seebeck coefficient reaches values up to -18 microvolt/K at room temperature and shows a magnetic field dependence up to 28.6 % upon spin reversal. In combination with thermal conductivity data of the same Co/Cu stack, we find a spin dependence of the thermoelectric figure of merit of up to 65 %. Furthermore, a spin dependence of the power factor of up to 110 % is derived.
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Submitted 13 November, 2013;
originally announced November 2013.
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Insights into the electronic structure of Co2FeSi from x-ray magnetic linear dichroism
Authors:
Markus Meinert,
Jan-Michael Schmalhorst,
Manuel Glas,
Günter Reiss,
Elke Arenholz,
Tim Böhnert,
Kornelius Nielsch
Abstract:
Experimental evidence both for and against a half-metallic ground-state of the Heusler compound Co2FeSi has been published. Density functional theory based calculations suggest a non half-metallic ground state. It has been argued, that on-site Coulomb interaction of the d electrons has to be taken into account via the LDA+U method, which predicts a half-metallic ground-state for U = 2.5...4.5 eV.…
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Experimental evidence both for and against a half-metallic ground-state of the Heusler compound Co2FeSi has been published. Density functional theory based calculations suggest a non half-metallic ground state. It has been argued, that on-site Coulomb interaction of the d electrons has to be taken into account via the LDA+U method, which predicts a half-metallic ground-state for U = 2.5...4.5 eV. X-ray magnetic linear dichroism (XMLD) can be used as a tool to assess the appropriateness of the LDA+U approach: the calculated spectra within the LDA+U or GGA+U schemes are different from those within the LDA or GGA. Due to its ability to separate different orbital symmetries, XMLD allows us to distinguish between different models of the electronic structure of Co2FeSi. In this article we discuss experimental XMLD spectra and compare them with detailed first principles calculations. Our findings give evidence for the inadequacy of the LDA+U or GGA+U band structures, whereas constrained calculations with the GGA and a fixed spin moment of 6 μ_B give better overall agreement between experiment and theory.
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Submitted 29 July, 2012; v1 submitted 30 January, 2012;
originally announced January 2012.
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Itinerant and local magnetic moments in ferrimagnetic Mn2CoGa thin films probed by x-ray magnetic linear dichroism: experiment and ab initio theory
Authors:
Markus Meinert,
Jan-Michael Schmalhorst,
Christoph Klewe,
Günter Reiss,
Elke Arenholz,
Tim Böhnert,
Kornelius Nielsch
Abstract:
Epitaxial thin films of the half-metallic Xa-compound Mn2CoGa (Hg2CuTi prototype) were prepared by dc magnetron co-sputtering with different heat treatments on MgO (001) substrates. High-quality films with a bulk magnetization of 1.95(5)μ_B per unit cell were obtained. The L3,2 x-ray magnetic circular dichroism spectra agree with calculations based on density functional theory (DFT) and reveal the…
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Epitaxial thin films of the half-metallic Xa-compound Mn2CoGa (Hg2CuTi prototype) were prepared by dc magnetron co-sputtering with different heat treatments on MgO (001) substrates. High-quality films with a bulk magnetization of 1.95(5)μ_B per unit cell were obtained. The L3,2 x-ray magnetic circular dichroism spectra agree with calculations based on density functional theory (DFT) and reveal the antiparallel alignment of the two inequivalent Mn moments. X-ray magnetic linear dichroism, in good agreement with theory as well, allows to distinguish between itinerant and local Mn moments. Based on non-collinear spin DFT it is shown that one of the two Mn moments has local character, whereas the other Mn moment and the Co moment are itinerant.
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Submitted 21 September, 2011; v1 submitted 5 July, 2011;
originally announced July 2011.
