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Stone-Wales defects in hexagonal boron nitride as ultraviolet emitters
Authors:
Hanen Hamdi,
Gergő Thiering,
Zoltán Bodrog,
Viktor Ivády,
Adam Gali
Abstract:
Many quantum emitters have been measured close or near the grain boundaries of the two-dimensional hexagonal boron nitride where various Stone-Wales defects appear. We show by means of first principles density functional theory calculations that the pentagon-heptagon Stone-Wales defect is an ultraviolet emitter and its optical properties closely follow the characteristics of a 4.08-eV quantum emit…
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Many quantum emitters have been measured close or near the grain boundaries of the two-dimensional hexagonal boron nitride where various Stone-Wales defects appear. We show by means of first principles density functional theory calculations that the pentagon-heptagon Stone-Wales defect is an ultraviolet emitter and its optical properties closely follow the characteristics of a 4.08-eV quantum emitter often observed in polycrystalline hexagonal boron nitride. We also show that the square-octagon Stone-Wales line defects are optically active in the ultraviolet region with varying gaps depending on their density in hexagonal boron nitride. Our results may introduce a paradigm shift in the identification of fluorescent centres in this material.
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Submitted 16 August, 2020;
originally announced August 2020.
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First principles study of charge diffusion between proximate solid state qubits and its implications on sensor applications
Authors:
Jyh-Pin Chou,
Zoltán Bodrog,
Adam Gali
Abstract:
Solid state qubits from paramagnetic point defects in solids are promising platforms to realize quantum networks and novel nanoscale sensors. Recent advances in materials engineering make possible to create proximate qubits in solids that might interact with each other, leading to electron spin/charge fluctuation. Here we develop a method to calculate the tunneling-mediated charge diffusion betwee…
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Solid state qubits from paramagnetic point defects in solids are promising platforms to realize quantum networks and novel nanoscale sensors. Recent advances in materials engineering make possible to create proximate qubits in solids that might interact with each other, leading to electron spin/charge fluctuation. Here we develop a method to calculate the tunneling-mediated charge diffusion between point defects from first principles, and apply it to nitrogen-vacancy (NV) qubits in diamond. The calculated tunneling rates are in quantitative agreement with previous experimental data. Our results suggest that proximate neutral and negatively charged NV defect pairs can form an NV--NV molecule. A tunneling-mediated model for the source of decoherence of the near-surface NV qubits is developed based on our findings on the interacting qubits in diamond.
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Submitted 6 March, 2018; v1 submitted 29 August, 2017;
originally announced August 2017.
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Room-temperature solid state quantum emitters in the telecom range
Authors:
Yu Zhou,
Ziyu Wang,
Abdullah Rasmita,
Sejeong Kim,
Amanuel Berhane,
Zoltan Bodrog,
Giorgio Adamo,
Adam Gali,
Igor Aharonovich,
Wei-bo Gao
Abstract:
On demand single photon emitters (SPEs) play a key role across a broad range of quantum technologies, including quantum computation, quantum simulation, quantum metrology and quantum communications. In quantum networks and quantum key distribution protocols, where photons are employed as flying qubits, telecom wavelength operation is preferred due to the reduced fibre loss. However, despite the tr…
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On demand single photon emitters (SPEs) play a key role across a broad range of quantum technologies, including quantum computation, quantum simulation, quantum metrology and quantum communications. In quantum networks and quantum key distribution protocols, where photons are employed as flying qubits, telecom wavelength operation is preferred due to the reduced fibre loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. Here we report a triggered, optically stable, room temperature solid state SPE operating at telecom wavelengths. The emitters exhibit high photon purity (~ 5% multiphoton events) and a record-high brightness of ~ 1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.
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Submitted 2 August, 2017;
originally announced August 2017.
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Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride
Authors:
Amanuel M. Berhane,
Kwang-Yong Jeong,
Zoltán Bodrog,
Saskia Fiedler,
Tim Schröder,
Noelia Vico Triviño,
Tomás Palacios,
Adam Gali,
Milos Toth,
Dirk Englund,
Igor Aharonovich
Abstract:
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature…
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Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN.
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Submitted 15 October, 2016;
originally announced October 2016.
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Optically Detected Magnetic Resonances of Nitrogen-Vacancy Ensembles in 13C Enriched Diamond
Authors:
A. Jarmola,
Z. Bodrog,
P. Kehayias,
M. Markham,
J. Hall,
D. J. Twitchen,
V. M. Acosta,
A. Gali,
D. Budker
Abstract:
We present an experimental and theoretical study of the optically detected magnetic resonance signals for ensembles of negatively charged nitrogen-vacancy (NV) centers in 13C isotopically enriched single-crystal diamond. We observe four broad transition peaks with superimposed sharp features at zero magnetic field and study their dependence on applied magnetic field. A theoretical model that repro…
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We present an experimental and theoretical study of the optically detected magnetic resonance signals for ensembles of negatively charged nitrogen-vacancy (NV) centers in 13C isotopically enriched single-crystal diamond. We observe four broad transition peaks with superimposed sharp features at zero magnetic field and study their dependence on applied magnetic field. A theoretical model that reproduces all qualitative features of these spectra is developed. Understanding the magnetic-resonance spectra of NV centers in isotopically enriched diamond is important for emerging applications in nuclear magnetic resonance.
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Submitted 30 August, 2016;
originally announced August 2016.
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Single-photon emitting diode in silicon carbide
Authors:
A. Lohrmann,
N. Iwamoto,
Z. Bodrog,
S. Castelletto,
T. Ohshima,
T. J. Karle,
A. Gali,
S. Prawer,
J. C. McCallum,
B. C. Johnson
Abstract:
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon…
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Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of $>$300 kHz), and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single photon source is proposed. These results provide a foundation for the large scale integration of single photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.
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Submitted 21 May, 2015; v1 submitted 25 March, 2015;
originally announced March 2015.
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Quantum-confined single photon emission at room temperature from Silicon carbide tetrapods
Authors:
Stefania Castelletto,
Zoltán Bodrog,
Andrew P. Magyar,
Angus Gentle,
Adam Gali,
Igor Aharonovich
Abstract:
Controlled engineering of isolated solid state quantum systems is one of the most prominent goals in modern nanotechnology. In this letter we demonstrate a previously unknown quantum system namely silicon carbide tetrapods. The tetrapods have a cubic polytype core (3C) and hexagonal polytype legs (4H) a geometry that creates a spontaneous polarization within a single tetrapod. Modeling of the tetr…
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Controlled engineering of isolated solid state quantum systems is one of the most prominent goals in modern nanotechnology. In this letter we demonstrate a previously unknown quantum system namely silicon carbide tetrapods. The tetrapods have a cubic polytype core (3C) and hexagonal polytype legs (4H) a geometry that creates a spontaneous polarization within a single tetrapod. Modeling of the tetrapod structures predict that a bound exciton should exist at the 3C 4H interface. The simulations are confirmed by the observation of fully polarized and narrowband single photon emission from the tetrapods at room temperature. The single photon emission provides important insights towards understanding the quantum confinement effects in non-spherical nanostructures. Our results pave the way to a new class of crystal phase nanomaterials that exhibit single photon emission at room temperature and therefore are suitable for sensing, quantum information and nanophotonics.
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Submitted 29 July, 2014;
originally announced July 2014.
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Readout and control of a single nuclear spin with a meta-stable electron spin ancilla
Authors:
Sang-Yun Lee,
Matthias Widmann,
Torsten Rendler,
Marcus Doherty,
Thomas M. Babinec,
Sen Yang,
Moritz Eyer,
Petr Siyushev,
Birgit J. M. Haussmann,
Marko Loncar,
Zoltán Bodrog,
Adam Gali,
Neil Manson,
Helmut Fedder,
Jörg Wrachtrup
Abstract:
Electron and nuclear spins associated with point defects in insulators are promising systems for solid state quantum technology. While the electron spin usually is used for readout and addressing, nuclear spins are exquisite quantum bits and memory systems. With these systems single-shot readout of nearby nuclear spins as well as entanglement aided by the electron spin has been shown. While the el…
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Electron and nuclear spins associated with point defects in insulators are promising systems for solid state quantum technology. While the electron spin usually is used for readout and addressing, nuclear spins are exquisite quantum bits and memory systems. With these systems single-shot readout of nearby nuclear spins as well as entanglement aided by the electron spin has been shown. While the electron spin in this example is essential for readout it usually limits nuclear spin coherence. This has set of the quest for defects with spin-free ground states. Here, we isolate a hitherto unidentified defect in diamond and use it at room temperature to demonstrate optical spin polarization and readout with exceptionally high contrast (up to 45%), coherent manipulation of an individual excited triplet state spin, and coherent nuclear spin manipulation using the triplet electron spin as a meta-stable ancilla. By this we demonstrate nuclear magnetic resonance and Rabi oscillations of the uncoupled nuclear spin in the spin-free electronic ground state. Our study demonstrates that nuclei coupled to single metastable electron spins are useful quantum systems with long memory times despite electronic relaxation processes.
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Submitted 19 February, 2013;
originally announced February 2013.
