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Charge Crowding in Graphene-Silicon Diodes
Authors:
Muhammad Abid Anwar,
Munir Ali,
Dong Pu,
Srikrishna Chanakya Bodepudi,
Xinyu Zhu,
Xin Pan,
Jianhang Lv,
Khurram Shehzad,
Xiaochen Wang,
Ali Imran,
Yuda Zhao,
Shurong Dong,
Yang Xu,
Bin Yu,
Huan Hu
Abstract:
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic pr…
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The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic properties of graphene-metal contacts, paying particular attention to the nature of the contact failure mechanism under high electrical stress. According to our findings, severe current crowding (CC) effects in highly conductive electrical contact significantly affect device failure that can be reduced by spatially varying the contact properties and geometry. The impact of electrical breakdown on material degradation is systematically analyzed by atomic force, Raman, scanning electron, and energy dispersive X-ray spectroscopies. Our devices withstand high electrostatic discharge spikes over a longer period, manifesting high robustness and operational stability. This research paves the way towards a highly robust and reliable graphene/Si heterostructure in futuristic on-chip integration in dynamic switching. The methods we employed here can be extended for other nanoscale electronic devices based on 2D-3D interfaces
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Submitted 7 November, 2022;
originally announced November 2022.
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Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks
Authors:
S. C. Bodepudi,
Xiao Wang,
Sandipan Pramanik
Abstract:
Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack of weakly coupled multilayer graphene as grown by chemical vapor deposition (CVD). This effect has been characterized as a function of temperature and tilt angle of the magnetic field with respect to the interlayer current. To our knowledge, this is the first experimental report on angle dependent ILMR effect in graphitic s…
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Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack of weakly coupled multilayer graphene as grown by chemical vapor deposition (CVD). This effect has been characterized as a function of temperature and tilt angle of the magnetic field with respect to the interlayer current. To our knowledge, this is the first experimental report on angle dependent ILMR effect in graphitic systems. Our data agrees qualitatively with the existing theories of ILMR in multilayer massless Dirac Fermion systems. However, a sharper change in ILMR has been observed as the tilt angle of the magnetic field is varied. A physical explanation of this effect is proposed, which is consistent with our experimental scenario.
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Submitted 26 October, 2017;
originally announced October 2017.
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Giant Current-Perpendicular-to-Plane Magnetoresistance in Multilayer Graphene as Grown on Nickel
Authors:
S. C. Bodepudi,
A. P. Singh,
Sandipan Pramanik
Abstract:
Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect o…
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Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of 10^4% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).
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Submitted 20 May, 2014;
originally announced May 2014.
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Fabrication of hexagonally ordered nanopores in anodic alumina: An alternative pretreatment
Authors:
K. M. Alam,
A. P. Singh,
S. C. Bodepudi,
S. Pramanik
Abstract:
Anodic aluminum oxide (AAO) or anodic alumina template containing hexagonally ordered nanopores has been widely used over the last decade for the development of numerous functional nanostructures such as nanoscale sensors, computing networks and memories. The long range pore order requires the starting aluminum surface to be extremely smooth. Electropolishing is the most commonly used method for s…
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Anodic aluminum oxide (AAO) or anodic alumina template containing hexagonally ordered nanopores has been widely used over the last decade for the development of numerous functional nanostructures such as nanoscale sensors, computing networks and memories. The long range pore order requires the starting aluminum surface to be extremely smooth. Electropolishing is the most commonly used method for surface planarization prior to anodization. While prevalent, this method has several limitations in terms of throughput, polishing area and requirement of special experimental setups, which introduce additional speed bottlenecks in the intrinsically slow AAO-based nanofabrication process. In this work we report a new generation of the so-called "chemical polishing" approach which circumvents these stumbling blocks in the pretreatment phase and offers a viable, simpler, safer and faster alternative to electropolishing. These benefits are obtained without sacrificing the quality of the final AAO template. In this work we have (a) identified the optimum parameter regime for chemical polishing and (b) determined process conditions for which a novel parallel nanoridge configuration self-assembles and extends over a distance of several microns. Such patterns can be used as a mask for fabricating nanocrossbars, which are the main structural components in myriad nanoscale memories and crosspoint architectures.
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Submitted 18 February, 2011;
originally announced February 2011.
