A peeling approach for integrated manufacturing of large mono-layer h-BN crystals
Authors:
Ruizhi Wang,
David G. Purdie,
Ye Fang,
Fabien Massabuau,
Philipp Braeuninger-Weimer,
Oliver J. Burton,
Raoul Blume,
Robert Schloegl,
Antonio Lombardo,
Robert S. Weatherup,
Stephan Hofmann
Abstract:
Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk…
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Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. Here, we address this integration challenge for mono-layer h-BN via a chemical vapour deposition process that enables crystal sizes exceeding 0.5 mm starting from commercial, reusable platinum foils, and in unison allows a delamination process for easy and clean layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. Our process development builds on a systematic understanding of the underlying mechanisms. The approach can be readily combined with other layered materials and opens a scalable route to h-BN layer integration and reliable 2D material device layer stacks.
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Submitted 30 July, 2018;
originally announced July 2018.
Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics
Authors:
Bruno Dlubak,
Marie-Blandine Martin,
Robert S. Weatherup,
Heejun Yang,
Cyrile Deranlot,
Raoul Blume,
Robert Schloegl,
Albert Fert,
Abdelmadjid Anane,
Stephan Hofmann,
Pierre Seneor,
John Robertson
Abstract:
We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference…
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We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.
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Submitted 13 November, 2014;
originally announced November 2014.
