-
Experimental Measurements of the Granular Density of Modes via Impact
Authors:
Sydney A. Blue,
Salem C. Wright,
Eli T. Owens
Abstract:
The jamming transition is an important feature of granular materials, with prior work showing an excess of low frequency modes in the granular analog to the density of states, the granular density of modes. In this work, we present an experimental method for acoustically measuring the granular density of modes using a single impact event to excite vibrational modes in an experimental, three dimens…
▽ More
The jamming transition is an important feature of granular materials, with prior work showing an excess of low frequency modes in the granular analog to the density of states, the granular density of modes. In this work, we present an experimental method for acoustically measuring the granular density of modes using a single impact event to excite vibrational modes in an experimental, three dimensional, granular material. We test three different granular materials, all of which are composed of spherical beads. The first two systems are monodisperse collections of either 6 mm or 8 mm diameter beads. The third system is a bidisperse mixture of the previous two bead sizes. During data collection, the particles are confined to a box; on top of this box, and resting on the granular material, is a light, rigid sheet onto which pressure can be applied to the system. To excite the material, a steel impactor ball is dropped on top of the system. The response of the granular material to the impact pulse is recorded by piezoelectric sensors buried throughout the material, and the density of modes is computed from the spectrum of the velocity autocorrelation of these sensors. Our measurements of the density of modes show more low frequency modes at low pressure, consistent with previous experimental and numerical results, as well as several low frequency peaks in the density of modes that shift with applied pressure. Finally, we also see that the density of modes falls off at a wavelength on the order of twice the particle diameter, which is reminiscent of the Debye frequency.
△ Less
Submitted 15 March, 2024;
originally announced March 2024.
-
Map** the in-plane electric field inside irradiated diodes
Authors:
L. Poley,
A. J. Blue,
C. Buttar,
V. Cindro,
C. Darroch,
V. Fadeyev,
J. Fernandez-Tejero,
C. Fleta,
C. Helling,
C. Labitan,
I. Mandić,
S. N. Santpur,
D. Sperlich,
M. Ullán,
Y. Unno
Abstract:
A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of…
▽ More
A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 x 10^15 n_eq/cm^2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2x3 μm^2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.
△ Less
Submitted 29 March, 2021;
originally announced March 2021.
-
The ABC130 barrel module prototy** programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
▽ More
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototy** programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototy** program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
△ Less
Submitted 7 September, 2020;
originally announced September 2020.
-
Map** the depleted area of silicon diodes using a micro-focused X-ray beam
Authors:
Luise Poley,
Andrew Blue,
Ingo Bloch,
Craig Buttar,
Vitaliy Fadeyev,
Javier Fernandez-Tejero,
Celeste Fleta,
Johannes Hacker,
Carlos Lacasta Llacer,
Mercedes Miñano,
Martin Renzmann,
Edoardo Rossi,
Craig Sawyer,
Dennis Sperlich,
Martin Stegler,
Miguel Ullán,
Yoshinobu Unno
Abstract:
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In…
▽ More
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge.
△ Less
Submitted 27 March, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
-
Investigations into the impact of locally modified sensor architectures on the detection efficiency of silicon micro-strip sensors
Authors:
Luise Poley,
Kristin Lohwasser,
Andrew Blue,
Mathieu Benoit,
Ingo Bloch,
Sergio Diez,
Vitaliy Fadeyev,
Bruce Gallop,
Ashley Greenall,
Ingrid-Maria Gregor,
John Keller,
Carlos Lacasta,
Dzmitry Maneuski,
Lingxin Meng,
Marko Milovanovic,
Ian Pape,
Peter W. Phillips,
Laura Rehnisch,
Kawal Sawhney,
Craig Sawyer,
Dennis Sperlich,
Martin Stegler,
Yoshinobu Unno,
Matt Warren,
Eda Yildirim
Abstract:
The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, sil…
▽ More
The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 {\upmu}m. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.
△ Less
Submitted 3 July, 2017; v1 submitted 18 November, 2016;
originally announced November 2016.
-
Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam
Authors:
Luise Poley,
Andrew Blue,
Richard Bates,
Ingo Bloch,
Sergio Diez,
Javier Fernandez-Tejero,
Celeste Fleta,
Bruce Gallop,
Ashley Greenall,
Ingrid-Maria Gregor,
Kazuhiko Hara,
Yoichi Ikegami,
Carlos Lacasta,
Kristin Lohwasser,
Dzmitry Maneuski,
Sebastian Nagorski,
Ian Pape,
Peter W. Phillips,
Dennis Sperlich,
Kawal Sawhney,
Urmila Soldevila,
Miguel Ullan,
Yoshinobu Unno,
Matt Warren
Abstract:
The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope wi…
▽ More
The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 um FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 Um thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 Um thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 um strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.
△ Less
Submitted 1 July, 2016; v1 submitted 15 March, 2016;
originally announced March 2016.
