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Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Authors:
Gianluca Aglieri Rinella,
Giacomo Alocco,
Matias Antonelli,
Roberto Baccomi,
Stefania Maria Beole,
Mihail Bogdan Blidaru,
Bent Benedikt Buttwill,
Eric Buschmann,
Paolo Camerini,
Francesca Carnesecchi,
Marielle Chartier,
Yongjun Choi,
Manuel Colocci,
Giacomo Contin,
Dominik Dannheim,
Daniele De Gruttola,
Manuel Del Rio Viera,
Andrea Dubla,
Antonello di Mauro,
Maurice Calvin Donner,
Gregor Hieronymus Eberwein,
Jan Egger,
Laura Fabbietti,
Finn Feindt,
Kunal Gautam
, et al. (69 additional authors not shown)
Abstract:
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25…
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Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.
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Submitted 13 March, 2024;
originally announced March 2024.
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First demonstration of in-beam performance of bent Monolithic Active Pixel Sensors
Authors:
ALICE ITS project,
:,
G. Aglieri Rinella,
M. Agnello,
B. Alessandro,
F. Agnese,
R. S. Akram,
J. Alme,
E. Anderssen,
D. Andreou,
F. Antinori,
N. Apadula,
P. Atkinson,
R. Baccomi,
A. Badalà,
A. Balbino,
C. Bartels,
R. Barthel,
F. Baruffaldi,
I. Belikov,
S. Beole,
P. Becht,
A. Bhatti,
M. Bhopal,
N. Bianchi
, et al. (230 additional authors not shown)
Abstract:
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to ra…
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A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$μ$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. Already with their thickness of 50$μ$m, they can be successfully bent to radii of about 2cm without any signs of mechanical or electrical damage. During a subsequent characterisation using a 5.4GeV electron beam, it was further confirmed that they preserve their full electrical functionality as well as particle detection performance.
In this article, the bending procedure and the setup used for characterisation are detailed. Furthermore, the analysis of the beam test, including the measurement of the detection efficiency as a function of beam position and local inclination angle, is discussed. The results show that the sensors maintain their excellent performance after bending to radii of 2cm, with detection efficiencies above 99.9% at typical operating conditions, paving the way towards a new class of detectors with unprecedented low material budget and ideal geometrical properties.
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Submitted 17 August, 2021; v1 submitted 27 May, 2021;
originally announced May 2021.
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Secondary discharge studies in single and multi GEM structures
Authors:
A. Deisting,
C. Garabatos,
P. Gasik,
D. Baitinger,
A. Berdnikova,
M. B. Blidaru,
A. Datz,
F. Dufter,
S. Hassan,
T. Klemenz,
L. Lautner,
S. Masciocchi,
A. Mathis,
R. A. Negrao De Oliveira,
A. Szabo
Abstract:
Secondary discharges, which consist of the breakdown of a gap near a GEM foil upon a primary discharge across that GEM, are studied in this work.
Their main characteristics are the occurrence a few $10\,μ\textrm{s}$ after the primary, the relatively sharp onset at moderate electric fields across the gap, the absence of increased fields in the system, and their occurrence under both field directi…
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Secondary discharges, which consist of the breakdown of a gap near a GEM foil upon a primary discharge across that GEM, are studied in this work.
Their main characteristics are the occurrence a few $10\,μ\textrm{s}$ after the primary, the relatively sharp onset at moderate electric fields across the gap, the absence of increased fields in the system, and their occurrence under both field directions.
They can be mitigated using series resistors in the high-voltage connection to the GEM electrode facing towards an anode. The electric field at which the onset of secondary discharges occurs indeed increases with increasing resistance. Discharge propagation form GEM to GEM in a multi-GEM system affects the occurrence probability of secondary discharges in the gaps between neighbouring GEMs.
Furthermore, evidence of charges flowing through the gap after the primary discharge are reported. Such currents may or may not lead to a secondary discharge. A characteristic charge, of the order of $10^{10}\,\textrm{electrons}$, has been measured as the threshold for a primary discharge to be followed by a secondary discharge, and this number slightly depends on the gas composition. A mechanism involving the heating of the cathode surface as trigger for secondary discharges is proposed.
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Submitted 21 January, 2019; v1 submitted 17 January, 2019;
originally announced January 2019.
